JP2008042143A - Iii族窒化物系化合物半導体発光素子及びその製造方法 - Google Patents
Iii族窒化物系化合物半導体発光素子及びその製造方法 Download PDFInfo
- Publication number
- JP2008042143A JP2008042143A JP2006218463A JP2006218463A JP2008042143A JP 2008042143 A JP2008042143 A JP 2008042143A JP 2006218463 A JP2006218463 A JP 2006218463A JP 2006218463 A JP2006218463 A JP 2006218463A JP 2008042143 A JP2008042143 A JP 2008042143A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- compound semiconductor
- group iii
- nitride compound
- iii nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- -1 nitride compound Chemical class 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 137
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 238000001039 wet etching Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 218
- 238000000034 method Methods 0.000 claims description 35
- 239000012790 adhesive layer Substances 0.000 claims description 21
- 239000011368 organic material Substances 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 abstract description 12
- 150000002739 metals Chemical class 0.000 abstract description 3
- 239000010949 copper Substances 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 239000010931 gold Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000000872 buffer Substances 0.000 description 5
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HQIPIFUXWHMQQW-UHFFFAOYSA-N [Sn].[Sn].[Au] Chemical compound [Sn].[Sn].[Au] HQIPIFUXWHMQQW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006218463A JP2008042143A (ja) | 2006-08-10 | 2006-08-10 | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006218463A JP2008042143A (ja) | 2006-08-10 | 2006-08-10 | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008042143A true JP2008042143A (ja) | 2008-02-21 |
JP2008042143A5 JP2008042143A5 (enrdf_load_stackoverflow) | 2010-09-16 |
Family
ID=39176770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006218463A Withdrawn JP2008042143A (ja) | 2006-08-10 | 2006-08-10 | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2008042143A (enrdf_load_stackoverflow) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009231549A (ja) * | 2008-03-24 | 2009-10-08 | Toyoda Gosei Co Ltd | 窒化物系半導体発光素子 |
JP2010114374A (ja) * | 2008-11-10 | 2010-05-20 | Stanley Electric Co Ltd | 半導体素子の製造方法 |
JP2010114373A (ja) * | 2008-11-10 | 2010-05-20 | Stanley Electric Co Ltd | 半導体素子の製造方法 |
JP2010114375A (ja) * | 2008-11-10 | 2010-05-20 | Stanley Electric Co Ltd | 半導体素子の製造方法 |
JP2011522436A (ja) * | 2008-06-02 | 2011-07-28 | コリア ユニバーシティ インダストリアル アンド アカデミック コラボレイション ファウンデーション | 半導体発光素子製造用支持基板及びこの支持基板を用いた半導体発光素子 |
WO2011118489A1 (ja) * | 2010-03-24 | 2011-09-29 | 住友ベークライト株式会社 | 発光素子の製造方法およびそれを用いてなる発光素子 |
WO2014079708A1 (de) * | 2012-11-23 | 2014-05-30 | Osram Opto Semiconductors Gmbh | Verfahren zum vereinzeln eines verbundes in halbleiterchips und halbleiterchip |
JP2014525683A (ja) * | 2011-08-30 | 2014-09-29 | コーニンクレッカ フィリップス エヌ ヴェ | 基板の半導体発光素子への接合方法 |
KR101470020B1 (ko) * | 2008-03-18 | 2014-12-10 | 엘지이노텍 주식회사 | 샌드위치 구조의 웨이퍼 결합 및 포톤 빔을 이용한 단결정 반도체 박막 전이 |
JP2016039242A (ja) * | 2014-08-07 | 2016-03-22 | シャープ株式会社 | 半導体発光素子の製造方法および半導体発光素子 |
CN105431252A (zh) * | 2013-08-08 | 2016-03-23 | 奥斯兰姆奥普托半导体有限责任公司 | 用于将复合体分割成半导体芯片的方法和半导体芯片 |
KR101608868B1 (ko) * | 2009-10-22 | 2016-04-04 | 삼성전자주식회사 | 조리개를 포함하는 발광다이오드 어레이, 이를 이용한 라인 프린터 헤드 및 발광다이오드 어레이의 제조방법 |
JP2020502796A (ja) * | 2016-12-16 | 2020-01-23 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体構成素子を製造する方法 |
CN115458647A (zh) * | 2022-10-31 | 2022-12-09 | 天津三安光电有限公司 | 一种垂直led芯片结构及其制造方法及发光装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005210066A (ja) * | 2003-12-25 | 2005-08-04 | Kyocera Corp | 薄膜発光素子およびその製造方法 |
JP2005259768A (ja) * | 2004-03-09 | 2005-09-22 | Sanyo Electric Co Ltd | 発光素子およびその製造方法 |
JP2005276900A (ja) * | 2004-03-23 | 2005-10-06 | Shin Etsu Handotai Co Ltd | 発光素子 |
JP2006086254A (ja) * | 2004-09-15 | 2006-03-30 | Kyocera Corp | 発光素子およびその製造方法ならびにその発光素子を用いた照明装置 |
-
2006
- 2006-08-10 JP JP2006218463A patent/JP2008042143A/ja not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005210066A (ja) * | 2003-12-25 | 2005-08-04 | Kyocera Corp | 薄膜発光素子およびその製造方法 |
JP2005259768A (ja) * | 2004-03-09 | 2005-09-22 | Sanyo Electric Co Ltd | 発光素子およびその製造方法 |
JP2005276900A (ja) * | 2004-03-23 | 2005-10-06 | Shin Etsu Handotai Co Ltd | 発光素子 |
JP2006086254A (ja) * | 2004-09-15 | 2006-03-30 | Kyocera Corp | 発光素子およびその製造方法ならびにその発光素子を用いた照明装置 |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101470020B1 (ko) * | 2008-03-18 | 2014-12-10 | 엘지이노텍 주식회사 | 샌드위치 구조의 웨이퍼 결합 및 포톤 빔을 이용한 단결정 반도체 박막 전이 |
JP2009231549A (ja) * | 2008-03-24 | 2009-10-08 | Toyoda Gosei Co Ltd | 窒化物系半導体発光素子 |
JP2011522436A (ja) * | 2008-06-02 | 2011-07-28 | コリア ユニバーシティ インダストリアル アンド アカデミック コラボレイション ファウンデーション | 半導体発光素子製造用支持基板及びこの支持基板を用いた半導体発光素子 |
US9224910B2 (en) | 2008-06-02 | 2015-12-29 | Lg Innotek Co., Ltd. | Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates |
US8877530B2 (en) | 2008-06-02 | 2014-11-04 | Lg Innotek Co., Ltd. | Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates |
JP2010114374A (ja) * | 2008-11-10 | 2010-05-20 | Stanley Electric Co Ltd | 半導体素子の製造方法 |
JP2010114373A (ja) * | 2008-11-10 | 2010-05-20 | Stanley Electric Co Ltd | 半導体素子の製造方法 |
JP2010114375A (ja) * | 2008-11-10 | 2010-05-20 | Stanley Electric Co Ltd | 半導体素子の製造方法 |
KR101608868B1 (ko) * | 2009-10-22 | 2016-04-04 | 삼성전자주식회사 | 조리개를 포함하는 발광다이오드 어레이, 이를 이용한 라인 프린터 헤드 및 발광다이오드 어레이의 제조방법 |
WO2011118489A1 (ja) * | 2010-03-24 | 2011-09-29 | 住友ベークライト株式会社 | 発光素子の製造方法およびそれを用いてなる発光素子 |
JP2014525683A (ja) * | 2011-08-30 | 2014-09-29 | コーニンクレッカ フィリップス エヌ ヴェ | 基板の半導体発光素子への接合方法 |
US10158049B2 (en) | 2011-08-30 | 2018-12-18 | Lumileds Llc | Method of bonding a substrate to a semiconductor light emitting device |
WO2014079708A1 (de) * | 2012-11-23 | 2014-05-30 | Osram Opto Semiconductors Gmbh | Verfahren zum vereinzeln eines verbundes in halbleiterchips und halbleiterchip |
US9728459B2 (en) | 2012-11-23 | 2017-08-08 | Osram Opto Semiconductors Gmbh | Method for singulating an assemblage into semiconductor chips, and semiconductor chip |
CN105431252A (zh) * | 2013-08-08 | 2016-03-23 | 奥斯兰姆奥普托半导体有限责任公司 | 用于将复合体分割成半导体芯片的方法和半导体芯片 |
CN105431252B (zh) * | 2013-08-08 | 2017-06-23 | 奥斯兰姆奥普托半导体有限责任公司 | 用于将复合体分割成半导体芯片的方法和半导体芯片 |
US9873166B2 (en) | 2013-08-08 | 2018-01-23 | Osram Opto Semiconductors Gmbh | Method for dividing a composite into semiconductor chips, and semiconductor chip |
US10232471B2 (en) | 2013-08-08 | 2019-03-19 | Osram Opto Semiconductors Gmbh | Method for dividing a composite into semiconductor chips, and semiconductor chip |
JP2016039242A (ja) * | 2014-08-07 | 2016-03-22 | シャープ株式会社 | 半導体発光素子の製造方法および半導体発光素子 |
JP2020502796A (ja) * | 2016-12-16 | 2020-01-23 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体構成素子を製造する方法 |
US11081620B2 (en) | 2016-12-16 | 2021-08-03 | Osram Oled Gmbh | Method of producing a semiconductor component |
CN115458647A (zh) * | 2022-10-31 | 2022-12-09 | 天津三安光电有限公司 | 一种垂直led芯片结构及其制造方法及发光装置 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2008042143A (ja) | Iii族窒化物系化合物半導体発光素子及びその製造方法 | |
JP4841378B2 (ja) | 垂直構造発光ダイオードの製造方法 | |
JP2008186959A (ja) | Iii−v族半導体素子、およびその製造方法 | |
JP4758857B2 (ja) | 垂直構造発光ダイオードの製造方法 | |
CN100388518C (zh) | 氮化物基化合物半导体发光器件 | |
US20070141806A1 (en) | Method for producing group III nitride based compound semiconductor device | |
JP4489747B2 (ja) | 垂直構造の窒化物半導体素子の製造方法 | |
CN101188265A (zh) | 半导体发光元件及其制造方法 | |
JP4835409B2 (ja) | Iii−v族半導体素子、およびその製造方法 | |
JP5774712B2 (ja) | 半導体素子およびその製造方法 | |
KR100916366B1 (ko) | 반도체 발광소자용 지지기판 및 이를 이용한 수직구조의 반도체 발광소자 제조 방법 | |
JP5658604B2 (ja) | 半導体発光素子の製造方法 | |
JP4910664B2 (ja) | Iii−v族半導体素子の製造方法 | |
EP2426741B1 (en) | Method of fabricating a semiconductor light emitting device | |
JP2008306021A (ja) | Ledチップの製造方法 | |
JP2010225852A (ja) | 半導体素子及びその製造方法 | |
JP2013197380A (ja) | 半導体発光素子、および、車両用灯具、ならびに、半導体発光素子の製造方法 | |
JP2008153362A (ja) | 半導体発光素子の製造方法、半導体発光素子及び発光装置 | |
JP2008140871A5 (enrdf_load_stackoverflow) | ||
JP4920249B2 (ja) | Iii族窒化物系化合物半導体発光素子 | |
JP2013058707A (ja) | 半導体発光素子の製造方法 | |
JPH11354841A (ja) | 半導体発光素子の製法 | |
US20070141753A1 (en) | Group III nitride based compound semiconductor device and producing method for the same | |
JP4738999B2 (ja) | 半導体光素子の製造方法 | |
JP2007158131A (ja) | Iii族窒化物系化合物半導体光素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081022 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20081219 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100802 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110412 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110413 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20110610 |