JP2008042017A - レジストを回収可能なレジスト剥離除去方法及びそれを用いる半導体製造装置 - Google Patents

レジストを回収可能なレジスト剥離除去方法及びそれを用いる半導体製造装置 Download PDF

Info

Publication number
JP2008042017A
JP2008042017A JP2006215979A JP2006215979A JP2008042017A JP 2008042017 A JP2008042017 A JP 2008042017A JP 2006215979 A JP2006215979 A JP 2006215979A JP 2006215979 A JP2006215979 A JP 2006215979A JP 2008042017 A JP2008042017 A JP 2008042017A
Authority
JP
Japan
Prior art keywords
resist film
resist
liquid
film
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006215979A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008042017A5 (enExample
Inventor
Tomozumi Kamimura
共住 神村
Takayuki Okamoto
隆幸 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OKAMOTO KOGAKU KAKOSHO KK
Original Assignee
OKAMOTO KOGAKU KAKOSHO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OKAMOTO KOGAKU KAKOSHO KK filed Critical OKAMOTO KOGAKU KAKOSHO KK
Priority to JP2006215979A priority Critical patent/JP2008042017A/ja
Publication of JP2008042017A publication Critical patent/JP2008042017A/ja
Publication of JP2008042017A5 publication Critical patent/JP2008042017A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2006215979A 2006-08-08 2006-08-08 レジストを回収可能なレジスト剥離除去方法及びそれを用いる半導体製造装置 Pending JP2008042017A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006215979A JP2008042017A (ja) 2006-08-08 2006-08-08 レジストを回収可能なレジスト剥離除去方法及びそれを用いる半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006215979A JP2008042017A (ja) 2006-08-08 2006-08-08 レジストを回収可能なレジスト剥離除去方法及びそれを用いる半導体製造装置

Publications (2)

Publication Number Publication Date
JP2008042017A true JP2008042017A (ja) 2008-02-21
JP2008042017A5 JP2008042017A5 (enExample) 2009-09-17

Family

ID=39176681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006215979A Pending JP2008042017A (ja) 2006-08-08 2006-08-08 レジストを回収可能なレジスト剥離除去方法及びそれを用いる半導体製造装置

Country Status (1)

Country Link
JP (1) JP2008042017A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101607706B1 (ko) 2008-06-13 2016-03-30 예놉틱 아우토마티지어룽스테히닉 게엠베하 박막 태양 전지 모듈을 위한 재활용 방법
CN106797014A (zh) * 2014-09-12 2017-05-31 东莞新能源科技有限公司 极片涂层的移除装置
CN106797015A (zh) * 2014-09-12 2017-05-31 东莞新能源科技有限公司 极片涂层的移除方法
CN109570151A (zh) * 2019-01-25 2019-04-05 中国工程物理研究院激光聚变研究中心 液流超声复合辅助激光清洗光学元件的装置及清洗方法
CN114425661A (zh) * 2020-10-15 2022-05-03 株式会社迪思科 激光加工方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145108A (ja) * 1997-11-05 1999-05-28 Denso Corp 微細加工方法および微細加工装置
JP2003249427A (ja) * 2001-12-17 2003-09-05 Tokyo Electron Ltd 膜除去装置及び膜除去方法
JP2003303789A (ja) * 2002-04-10 2003-10-24 Laser Gijutsu Sogo Kenkyusho フォトレジスト剥離除去方法及び装置
JP2004157424A (ja) * 2002-11-08 2004-06-03 Sony Corp レジストの剥離方法及び半導体装置の製造方法
JP2005340668A (ja) * 2004-05-28 2005-12-08 Purex:Kk 有機物質の除去方法および除去装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145108A (ja) * 1997-11-05 1999-05-28 Denso Corp 微細加工方法および微細加工装置
JP2003249427A (ja) * 2001-12-17 2003-09-05 Tokyo Electron Ltd 膜除去装置及び膜除去方法
JP2003303789A (ja) * 2002-04-10 2003-10-24 Laser Gijutsu Sogo Kenkyusho フォトレジスト剥離除去方法及び装置
JP2004157424A (ja) * 2002-11-08 2004-06-03 Sony Corp レジストの剥離方法及び半導体装置の製造方法
JP2005340668A (ja) * 2004-05-28 2005-12-08 Purex:Kk 有機物質の除去方法および除去装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101607706B1 (ko) 2008-06-13 2016-03-30 예놉틱 아우토마티지어룽스테히닉 게엠베하 박막 태양 전지 모듈을 위한 재활용 방법
CN106797014A (zh) * 2014-09-12 2017-05-31 东莞新能源科技有限公司 极片涂层的移除装置
CN106797015A (zh) * 2014-09-12 2017-05-31 东莞新能源科技有限公司 极片涂层的移除方法
EP3190646A4 (en) * 2014-09-12 2018-04-04 Dongguan Amperex Technology Limited Electrode plate coating removal method
CN109570151A (zh) * 2019-01-25 2019-04-05 中国工程物理研究院激光聚变研究中心 液流超声复合辅助激光清洗光学元件的装置及清洗方法
CN109570151B (zh) * 2019-01-25 2023-12-22 中国工程物理研究院激光聚变研究中心 液流超声复合辅助激光清洗光学元件的装置及清洗方法
CN114425661A (zh) * 2020-10-15 2022-05-03 株式会社迪思科 激光加工方法

Similar Documents

Publication Publication Date Title
JP4861609B2 (ja) 有機物質の除去方法および除去装置
JP5816409B2 (ja) レーザビア穴あけのためのスループットを高める方法
TWI673764B (zh) 用於雷射後碎屑移除系統及方法之犧牲層
JPS5970755A (ja) エネルギ・ビームを用いた電気化学的処理方法
WO2005043699B1 (en) Laser processing of a locally heated target material
US6627846B1 (en) Laser-driven cleaning using reactive gases
JP2006229198A (ja) 紫外線内設洗浄器具のための方法および装置
JP2003133690A (ja) 超短パルスレーザを用いた回路形成方法
JP2010045283A (ja) 異物除去装置、異物除去方法、及びパターン基板の製造方法
JP2008042017A (ja) レジストを回収可能なレジスト剥離除去方法及びそれを用いる半導体製造装置
CN100582950C (zh) 从基体表面去除粘性材料的方法、处理液体和装置
TWI330765B (en) Photoresist peeling/removing method and device
JP2005305470A (ja) 紫外線補助超短パルスレーザ加工装置並びに方法
JP2009136912A (ja) 透明材料加工法及び透明材料加工装置
JP3998974B2 (ja) 回路基板のパターニング方法
JP2000202664A (ja) レ―ザ穴あけ加工方法
JP2008042017A5 (enExample)
KR100913151B1 (ko) 펄스 레이저 유기 충격파를 이용한 금속표면 세정방법 및세정장치
JP2004157424A (ja) レジストの剥離方法及び半導体装置の製造方法
JP2003285183A (ja) レーザ加工装置及び加工方法
JP4883975B2 (ja) 基体表面上の付着物の除去方法、除去用処理液および除去装置
JP3667706B2 (ja) レーザ加工方法
RU2764237C1 (ru) Способ и устройство для очистки подложки и компьютерный программный продукт
KR20050095320A (ko) 레이저 유기 충격파와 액막의 기화를 이용한 세정 방법 및그 장치
JP2002373878A (ja) 基板表面のクリーニング装置及び方法

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20080214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20080214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090805

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090805

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110816

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111227