TWI673764B - 用於雷射後碎屑移除系統及方法之犧牲層 - Google Patents

用於雷射後碎屑移除系統及方法之犧牲層 Download PDF

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TWI673764B
TWI673764B TW105140669A TW105140669A TWI673764B TW I673764 B TWI673764 B TW I673764B TW 105140669 A TW105140669 A TW 105140669A TW 105140669 A TW105140669 A TW 105140669A TW I673764 B TWI673764 B TW I673764B
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Taiwan
Prior art keywords
water
sacrificial layer
debris
soluble
layer
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TW105140669A
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TW201730923A (zh
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哈比 西奇里
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美商蘇斯微科光電系統股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02098—Cleaning only involving lasers, e.g. laser ablation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/355—Texturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
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    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
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    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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Abstract

對於一實施例，一種自一晶圓移除雷射後碎屑之方法包括：在一待圖案化層上方形成一犧牲層；使用雷射燒蝕圖案化該犧牲層及該待圖案化層；及用水移除該犧牲層及沈積在該犧牲層上之碎屑。該犧牲層包括一水溶性黏合劑及一水溶性紫外光(UV)吸收劑。亦描述用於移除該雷射後碎屑之系統。

Description

用於雷射後碎屑移除系統及方法之犧牲層
本申請案大體上係關於用於製造電子基板及半導體晶圓之技術，且更特定言之，例如，係關於用於使用雷射圖案化此類基板及晶圓上之層並且移除雷射後碎屑之方法。
雷射燒蝕描述使用高光子能量(亦即，短波長，且不必高強度)來移除材料，且其為圖案化聚合物之極有效方法。通常，紫外(UV)光以中等強度照在聚合物上，以使得光化學效應及光熱效應之組合將聚合物鏈解離成更小之揮發性分子，使用碎屑移除系統移除該等揮發性分子。除成功地移除諸如聚醯亞胺之聚合物之外，雷射燒蝕亦可用以移除金屬及無機材料。 由於可在無需光敏媒質、顯影劑或蝕刻劑之情況下圖案化高解析度特徵，雷射燒蝕可為具成本效益之圖案化方法。舉例而言，雷射燒蝕已成功地用以圖案化具有小於5 μm之解析度限值之材料。雷射燒蝕速率係波長、脈衝寬度及能量密度之函數，因此可精確地控制燒蝕速率。 已用準分子雷射成功地示範雷射燒蝕，該等準分子雷射在過去二十年中已成為縮微影之主要手段。準分子雷射係最強力之UV雷射源，且通常含有稀有氣體以及鹵素或含鹵素氣體。常用之準分子雷射氣體係KrF (248 nm)及ArF (193 nm)。不同於其他雷射，準分子雷射產生無光點且非相干之光，此對於高解析度光刻係理想的。由於準分子雷射有效地發射處於UV光譜之光，具有大光束大小並且可容易地用於縮微影，因此其理想地適用於雷射燒蝕。 然而，該雷射燒蝕過程在材料表面上產生需要移除之碎屑(在圖案化期間噴出材料顆粒)。此碎屑污染基板並且可能對後續步驟造成困難。在基板上用以移除碎屑之當前材料可能不吸收來自雷射器之UV輻射或可能不耐受對完整晶粒之雷射掃描，並且可能剝落，從而減少其自表面清除碎屑之效力。 諸多產品出於移除UV雷射燒蝕碎屑之目的已經商品化。此等材料主要用於UV雷射(CO2 )或固態雷射，諸如二極體泵浦固態(DPSS)雷射，其中每次一個通孔或一行地執行該過程。此等材料(如用於雷射刻劃之EMC 1146保護塗層(可購自Emulsitone化工有限責任公司(Emulsitone Chemicals, LLC)、Daecoat產品(可購自約翰莫耳諮詢公司(John Moore Consulting)或HogoMax產品(可購自DISCO公司(DISCO Corporation))在與使用準分子雷射過程之遮罩掃描系統一起使用時不會有效地起作用。此等材料僅可與光點照射燒蝕一起有效地使用，且不具有足夠之UV吸收能力。因此，此等材料當在準分子雷射燒蝕過程期間暴露於掃描光束時剝離或剝落。 諸多其他研究機構已提出使用光阻材料薄層作為犧牲層。然而，溶劑之成本及使用使得此選擇方案在大批量製造中不具優勢。 因此，需要用於移除雷射後碎屑之改良的材料及方法。
根據本發明之一或多個實施例，提供移除雷射後碎屑之系統及方法，其可避免或減少先前技術之以上及其他缺點。 在一個實例實施例中，一種自一晶圓移除雷射後碎屑之方法包括：在一待圖案化層上方形成一犧牲層，其中該犧牲層包含一水溶性黏合劑及一水溶性紫外光(UV)吸收劑；使用雷射燒蝕圖案化該犧牲層及該待圖案化層；及用水移除該犧牲層及沈積在該犧牲層上之碎屑。 在另一實施例中，一種自一晶圓移除雷射後碎屑之方法包括：組合一水溶性黏合劑與一水溶性紫外光(UV)吸收劑以形成一溶液；將該溶液應用於一介電、玻璃或金屬層上以形成一犧牲層；使用雷射燒蝕圖案化該犧牲層及該介電、玻璃或金屬層；及用水移除該犧牲層及沈積在該犧牲層上之碎屑。 在另一實施例中，一種自一晶圓移除雷射後碎屑之方法包括：形成包含一水溶性黏合劑及一水溶性紫外光(UV)吸收劑之一溶液；在一介電層上形成一犧牲層；使用準分子雷射燒蝕圖案化該犧牲層及該介電層；及藉由一水噴淋移除沈積在該犧牲層上之碎屑及該犧牲層。 在另一實施例中，一種自一晶圓移除雷射後碎屑之方法包括：形成包含一水溶性黏合劑及一水溶性紫外光(UV)吸收劑之一溶液；在一介電層上形成一犧牲層；使用準分子雷射燒蝕圖案化該犧牲層及該介電層；藉由一水噴淋移除沈積在該犧牲層上之碎屑及該犧牲層；及用醇(諸如異丙醇或乙醇)沖洗該介電層。 可自考慮在下文對本發明之系統及方法之某些實例實施例之詳細描述，尤其係在此類考慮係結合附圖進行時，將更好地理解本發明之系統及方法之以上及其他特徵及優點，其中相同之參考標號用以標識在其一或多個圖中所說明之元件。
描述根據一或多個實施例移除碎屑之犧牲層。該犧牲層包括水溶性薄膜，其能夠在諸如掃描燒蝕或光點照射燒蝕之雷射燒蝕期間吸收UV光，並且與待圖案化之層一起被燒蝕。犧牲層易於在燒蝕過程之後用水移除。犧牲層之移除會一起帶走在燒蝕期間沈積的所有碎屑。此產生乾淨的燒蝕特徵，以準備好用於後續過程。所描述的方法可用在用於半導體行業中的完整晶粒或巨晶(macro)產品上，以及用在用於進階半導體封裝應用的介電材料上，包括形成通孔、凸塊、重佈層、線及空間燒蝕，或作為雙重金屬鑲嵌程序流程同時燒蝕通孔及重佈層的組合。 犧牲層包括至少兩個組分：(1)水溶性黏合劑，以及(2)水溶性UV吸收劑。水溶性黏合劑係在暴露於UV光時為穩定的任何適合黏合劑。水溶性UV吸收劑係使用黏合劑黏合、呈現光穩定性，且在暴露於UV光時為熱穩定的任何適合吸收劑。該等組分經選擇以形成與基板上之其他層具有極少反應或幾乎沒有反應的犧牲層。在黏合劑與UV吸收劑混合時所形成之該犧牲層吸收UV光，且亦可用以圖案化基板上之多個特徵而不會剝落或剝離。該犧牲層形成約0.2微米至5微米厚之膜。在各種實施例中，該膜為約0.5微米至2微米厚，且在其他實施例中，該膜為約1微米至1.5微米厚。 適合黏合劑包括但不限於聚乙烯醇(PVA)、聚乙烯吡咯烷酮(PVP)、聚氧化乙烯(PEO)、聚丙烯酸材料(諸如聚丙烯酸)、乙基纖維素及甲酯，或任何其他水溶性聚合物。適合UV吸附劑包括(但不限於)苯并三唑及三嗪類UV吸收劑材料，諸如Tinuvin® 400-DW、Tinuvin® 477-DW，以及Tinuvin® 99-DW。 呈現改良之熱穩定性之黏合劑係水溶性PEO聚合物。Polyox™ WSR N-750及Polyox™ WSR N-3000係適合之黏合劑，且兩者可購自陶氏化學公司(The Dow® Chemical Company)。含有約1重量%至10重量%之PEO之溶液與水溶性UV吸收劑材料混合的混合物(諸如Tinuvin® 400-DW溶液(可購自BASF之液體羥苯基三嗪))作為用以藉由簡單水洗滌步驟來移除燒蝕後碎屑的犧牲層經論證係有效的。在若干實施例中，犧牲層中之黏合劑與UV吸收劑的比率在約30:1至約5:1的範圍內。在其他實施例中，犧牲層中之黏合劑與UV吸收劑的比率在約15:2至約10:1的範圍內。 現將參考附圖描述本發明之例示性實施例。 參考圖1及圖2A至圖2D，描述用於自表面移除雷射後碎屑之方法100。在步驟102及圖2A處，於基板200上形成介電層205或可藉由雷射圖案化之其他材料(諸如金屬或玻璃)。在各種實施例中，該介電層係有機介電膜。適合之圖案化材料對於熟習此項技術者係已知的。 移動至步驟104及圖2B，在介電層205上方沈積或塗佈犧牲層210。在一些實施例中，犧牲層210係使用旋塗、噴塗或熟習此項技術者已知之任何適合技術形成於介電層205之頂部上。 在步驟106及圖2C處，將介電層205及犧牲層210暴露於來自UV雷射器之光束214，以經由遮罩或光罩來形成圖案(例如，通孔及/或溝槽)，使得藉由光束214來掃描基板200之將被燒蝕的所有區域。在各種實施例中，使用193 nm、248 nm、308 nm或355 nm UV準分子雷射，諸如其中使用遮罩掃描或光點照射燒蝕。介電層205及犧牲層210吸收雷射束214，且燒蝕基板200之暴露區域。此雷射燒蝕過程致使碎屑212自圖案射出且沈積在圍繞所燒蝕圖案之犧牲層210的頂部上。 在步驟108及圖2D處，噴淋水以移除犧牲層210上之碎屑212及犧牲層210兩者。在另一實施例中，使用水浴來移除犧牲層210及碎屑212。使介電層205之圖案及表面係乾淨且無碎屑的以用於後續處理，諸如晶種層沈積及鍍覆。步驟108使用習知噴水技術。 有利的是，僅用水而非成本高或有危害之有機溶劑來移除犧牲層及碎屑。此外，犧牲層係熱穩定的，在圖案化期間不會剝落或剝離，且吸收UV輻射。犧牲層在準分子雷射燒蝕過程期間為光點照射燒蝕工作(分步重複)，或與掃描光束一起起作用。 在各種實施例中，於噴淋水之後，用醇沖洗介電層205以進一步清洗介電層205且有助於使介電層205變乾。在一些實施例中，沖洗介電層205約15秒至約30秒。 圖3A說明在燒蝕之後的晶圓，其中在犧牲層之頂部上具有碎屑。圖3B說明在噴水清洗之後的晶圓，其中移除了犧牲層及碎屑。如可見，藉由僅簡單地用水洗滌，基板被清除了碎屑，係乾淨的。 實例1 將一點五(1.5)克PEO溶解於48.5 mL去離子水中以形成3% PEO水溶液(黏合劑溶液)。在另一燒杯中量測十五(15) mL之此黏合劑溶液，且將0.5 mL至2 mL之Tinuvin® 400溶液(來自BASF之UV吸收劑)添加至該黏合劑溶液。該兩種材料混合以形成帶白色之均勻溶液。將其上已經塗佈介電材料且完全固化之晶圓(100至300 mm)或層壓乾膜晶圓置放在旋塗器工具上。將特定量之溶液施配在晶圓的頂部上，且接著使晶圓在室溫下以2500 rpm自旋30秒。該量取決於晶圓大小。對於100 mm至150 mm晶圓，使用約5 mL至10 mL。對於150 mm至200 mm晶圓，使用約10 mL至15 mL。對於300 mm晶圓，使用約15 mL至25 mL。經施配於晶圓上之該量係用以確保最佳覆蓋率及均勻膜厚度。接著移除晶圓，且允許在室溫下使用氮氣吹掃來使晶圓變乾。所形成之犧牲層厚度範圍為自約0.5微米至2微米。 接下來，將經塗佈晶圓置放在UV雷射器之夾盤上，且在介電或層壓乾膜上燒蝕所需特徵。在燒蝕之後，檢查晶圓之碎屑、特徵解析度及臨界尺寸。之後，將晶圓載入至高壓CO2 離子化之去離子水噴淋工具(SUSS MicroTec Delta12AQ)中。將晶圓暴露於處於以下條件的水噴淋：水壓30巴至50巴，25℃，以及1000 rpm自旋300秒，接著係以1500 rpm進行60秒旋乾。接著檢查晶圓之碎屑，且發現在介電或層壓乾膜之頂部上無任何材料殘留。所有所燒蝕特徵係乾淨的。 實例2 將一點五(1.5)克PEO溶解於48.5 mL去離子水中以形成3% PEO水溶液(黏合劑溶液)。在另一燒杯中量測三十(30) mL之此黏合劑溶液，且將1 mL至3 mL之Tinuvin® 400溶液(來自BASF之UV吸收劑)添加至該黏合劑溶液。該兩種材料經混合以形成帶白色之均勻溶液。將其上已經塗佈介電材料且完全固化之200 mm晶圓或層壓乾膜晶圓置放在旋塗器工具上。將約10 mL至15 mL之溶液施配在200 mm晶圓之頂部上，且接著使晶圓在室溫下以2500 rpm自旋30秒。接著移除晶圓，且允許在室溫下使用氮氣吹掃來使晶圓變乾。所形成之犧牲層厚度範圍為自約0.5微米至2微米。 接下來，將經塗佈晶圓置放在UV雷射器之夾盤上，且在介電或層壓乾膜上燒蝕所需特徵。在燒蝕之後，檢查晶圓之碎屑、特徵解析度，及臨界尺寸。之後，將晶圓載入至高壓CO2 離子化之去離子水噴淋工具(SUSS MicroTec Delta12AQ)中。將晶圓暴露於處於以下條件之水噴淋：水壓30巴至50巴，25℃，以及1000 rpm自旋300秒。 接著將晶圓暴露於異丙醇沖洗30秒，同時以1500 rpm自旋，緊接以1500 rpm進行60秒旋乾。接著檢查晶圓之碎屑，且發現在介電或層壓乾膜之頂部上無任何材料殘留。所有所燒蝕特徵係乾淨的。 圖4說明根據一或多個實施例之可用以移除雷射後碎屑之系統400。系統400包括雷射燒蝕系統405、水碎屑移除系統410，以及晶圓處理系統415。雷射燒蝕系統405使用雷射源(例如，準分子雷射)來圖案化介電層205及犧牲層210。接下來，在水碎屑移除系統410中使用水來移除碎屑212及犧牲層210。水碎屑移除系統410可包括水噴淋或水浴。一旦移除了雷射後碎屑212，可在晶圓處理系統415中執行後續處理，諸如晶種層沈積及鍍覆。 如熟習此項技術者到目前為止將理解，可在不脫離本發明之精神及範疇的情況下，對根據本發明之一或多個實施例之移除雷射後碎屑的材料、設備、組態及方法進行諸多修改、替代及變化。因此，本發明之範疇應不限於如本文中所說明且描述之特定實施例，因為該等特定實施例僅為其一些實例方式，而實際上，應與所附申請專利範圍及其功能等效物完全相稱。
200‧‧‧基板
205‧‧‧介電層
210‧‧‧犧牲層
212‧‧‧碎屑
214‧‧‧雷射束
400‧‧‧系統
405‧‧‧雷射燒蝕系統
410‧‧‧水碎屑移除系統
415‧‧‧晶圓處理系統
圖1係根據本發明之實施例之移除雷射後碎屑之方法的流程圖； 圖2A至圖2D係根據本發明之實施例之基板經歷移除雷射後碎屑之方法的剖面側視圖； 圖3A說明根據本發明之實施例之在雷射燒蝕之後的晶圓，其中在犧牲層之頂部上具有雷射後碎屑； 圖3B說明在噴水清洗之後之圖3A的晶圓，其中移除了犧牲層及雷射後碎屑；及 圖4說明根據本發明之實施例之用於移除雷射後碎屑之系統的方塊圖。

Claims (28)

  1. 一種自一晶圓移除雷射後(post-laser)碎屑之方法，其包含：在一待圖案化層上方形成一犧牲層，其中該犧牲層包含一水溶性黏合劑及一水溶性紫外光(UV)吸收劑；使用雷射燒蝕(ablation)來圖案化該犧牲層及該待圖案化層；及用水移除該犧牲層及沈積在該犧牲層上之碎屑。
  2. 如請求項1之方法，其中該雷射燒蝕使用一準分子雷射。
  3. 如請求項2之方法，其中該準分子雷射包含一248nm準分子雷射。
  4. 如請求項1之方法，其中該水溶性黏合劑包括一甲酯。
  5. 如請求項3之方法，其中該水溶性UV吸收劑係選自由以下各者組成之群組：苯并三唑類UV吸收劑材料、三嗪類UV吸收劑材料，以及其組合，且該水溶性黏合劑包括一甲酯。
  6. 如請求項1之方法，其中該犧牲層為約0.5微米至2微米厚。
  7. 如請求項6之方法，其中該犧牲層為約1微米至1.5微米厚。
  8. 如請求項4之方法，其中該待圖案化層包含一介電材料、玻璃、金 屬，或其組合，且該雷射燒蝕使用一308nm準分子雷射或一355nm準分子雷射。
  9. 如請求項3之方法，其中該水溶性黏合劑係選自由以下各者組成之群組：聚乙烯醇(PVA)、聚乙烯吡咯烷酮(PVP)、聚氧化乙烯(PEO)、聚丙烯酸材料、乙基纖維素，以及其組合，且該犧牲層中之該水溶性黏合劑與該水溶性UV吸收劑之一比率為自約30：1至約5：1。
  10. 如請求項3之方法，其中該水溶性黏合劑包含聚氧化乙烯(PEO)，且該水溶性UV吸收劑包含一液體羥苯基三嗪。
  11. 如請求項1之方法，其中移除該犧牲層及該碎屑包含在該犧牲層上噴淋水，或使用一水浴(water bath)。
  12. 如請求項1之方法，進一步包含在用水移除該犧牲層及碎屑之後，用醇沖洗該待圖案化層。
  13. 一種用於執行如請求項1之方法之系統，其包含：一雷射燒蝕系統；一水碎屑移除系統；及一晶圓處理系統。
  14. 一種自一晶圓移除雷射後碎屑之方法，其包含： 組合一水溶性黏合劑與一水溶性紫外光(UV)吸收劑以形成一溶液；將該溶液應用於一介電、玻璃或金屬層上，以形成一犧牲層；使用雷射燒蝕來圖案化該犧牲層及該介電、玻璃或金屬層；及用水移除該犧牲層及沈積在該犧牲層上之碎屑。
  15. 如請求項14之方法，其中該溶液包含約1重量%至10重量%之該水溶性黏合劑，且該水溶性黏合劑包括一甲酯。
  16. 如請求項15之方法，其中該水溶性UV吸收劑包含一液體羥苯基三嗪。
  17. 如請求項14之方法，其中該雷射燒蝕使用一248nm準分子雷射。
  18. 如請求項17之方法，其中該水溶性黏合劑係選自由以下各者組成之群組：聚乙烯醇(PVA)、聚乙烯吡咯烷酮(PVP)、聚氧化乙烯(PEO)、聚丙烯酸材料、乙基纖維素，以及其組合。
  19. 如請求項15之方法，其中該水溶性UV吸收劑係選自由以下各者組成之群組：苯并三唑類UV吸收劑材料、三嗪類UV吸收劑材料，以及其組合。
  20. 如請求項15之方法，其中該犧牲層為約1微米至1.5微米厚。
  21. 如請求項14之方法，進一步包含在用水移除該犧牲層及碎屑之後，用醇沖洗該介電、玻璃或金屬層。
  22. 如請求項14之方法，其中該溶液經應用於該介電層上，該雷射燒蝕使用一248nm準分子雷射，且該水溶性黏合劑包括一甲酯。
  23. 如請求項17之方法，其中該水溶性黏合劑包含聚氧化乙烯(PEO)，且該水溶性UV吸收劑包含一液體羥苯基三嗪。
  24. 如請求項23之方法，其中該犧牲層中之該聚氧化乙烯(PEO)與該液體羥苯基三嗪之一比率為自約30：1至約5：1。
  25. 如請求項22之方法，其中該犧牲層為約1微米至1.5微米厚。
  26. 如請求項22之方法，進一步包含在藉由該水噴淋移除該犧牲層及碎屑之後，用醇沖洗該介電層。
  27. 一種用於執行如請求項14之方法之系統，其包含：一雷射燒蝕系統；一水碎屑移除系統；及一晶圓處理系統。
  28. 一種用於執行如請求項22之方法之系統，其包含： 一雷射燒蝕系統；一水碎屑移除系統；及一晶圓處理系統。
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