CN106876266A - 用于激光后碎屑移除系统和方法的牺牲层 - Google Patents

用于激光后碎屑移除系统和方法的牺牲层 Download PDF

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Publication number
CN106876266A
CN106876266A CN201611142764.XA CN201611142764A CN106876266A CN 106876266 A CN106876266 A CN 106876266A CN 201611142764 A CN201611142764 A CN 201611142764A CN 106876266 A CN106876266 A CN 106876266A
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Prior art keywords
water
sacrifice layer
chip
layer
laser
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Inventor
哈比卜·希什里
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Suss Tektronix Photon Systems Inc
SUSS MicroTec Photonic Systems Inc
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Suss Tektronix Photon Systems Inc
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Publication of CN106876266A publication Critical patent/CN106876266A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02098—Cleaning only involving lasers, e.g. laser ablation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
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    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/355—Texturing
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    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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    • B23K26/36—Removing material
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
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Abstract

本申请案涉及用于激光后碎屑移除系统和方法的牺牲层。作为实施例，从晶片移除激光后碎屑的方法包含：在待图案化层上方形成牺牲层；使用激光烧蚀图案化所述牺牲层和所述待图案化层；和用水移除所述牺牲层和沉积在所述牺牲层上的碎屑。所述牺牲层包含水溶性粘合剂和水溶性紫外光UV吸收剂。还描述用于移除所述激光后碎屑的系统。

Description

用于激光后碎屑移除系统和方法的牺牲层
技术领域
本申请案大体上涉及用于制造电子衬底和半导体晶片的技术，且更确切地说，例如，涉及用于使用激光图案化此类衬底和晶片上的层并且移除激光后碎屑的方法。
背景技术
激光烧蚀描述使用高光子能量(即短波长，且不必高强度)来移除材料，且其为图案化聚合物的极有效方法。通常，紫外(UV)光以中等强度照在聚合物上，以使得光化学效应和光热效应的组合将聚合物链解离成更小的挥发性分子，使用碎屑移除系统移除所述挥发性分子。除成功地移除例如聚酰亚胺的聚合物之外，激光烧蚀还可用以移除金属和无机材料。
由于可在无需光敏媒质、显影剂或蚀刻剂的情况下图案化高分辨率特征，激光烧蚀可为具成本效益的图案化方法。举例来说，激光烧蚀已成功地用以图案化具有小于5μm的分辨率限值的材料。激光烧蚀速率是波长、脉冲宽度和能量密度的函数，因此可精确地控制烧蚀速率。
已用准分子激光成功地示范激光烧蚀，所述准分子激光在过去二十年中已成为微光刻的主要手段。准分子激光是最强力的UV激光源，且通常含有稀有气体以及卤素或含卤素气体。常用的准分子激光气体是KrF(248nm)和ArF(193nm)。不同于其它激光，准分子激光产生无光点且非相干的光，这对于高分辨率光刻是理想的。因为准分子激光有效地发射处于UV光谱的光，具有大光束大小并且可容易地用于微光刻，所以其理想地适用于激光烧蚀。
然而，所述激光烧蚀过程在材料表面上产生需要移除的碎屑(在图案化期间喷出材料颗粒)。此碎屑污染衬底并且可能对后续步骤造成困难。在衬底上用以移除碎屑的当前材料可能不吸收来自激光器的UV辐射或可能不耐受对完整裸片的激光扫描，并且可能剥落，从而减少其从表面清除碎屑的效力。
很多产品出于移除UV激光烧蚀碎屑的目的已经商品化。这些材料主要用于UV激光(CO2)或固态激光，例如二极管泵浦固态(DPSS)激光，其中每次一个通孔或一行地执行所述过程。这些材料(如用于激光刻划的EMC 1146保护涂层(可购自Emulsitone化工有限责任公司(Emulsitone Chemicals,LLC)、Daecoat产品(可购自约翰摩尔咨询公司(John MooreConsulting)或HogoMax产品(可购自DISCO公司(DISCO Corporation))在与使用准分子激光过程的掩模扫描系统一起使用时不会有效地起作用。这些材料仅可与光点照射烧蚀一起有效地使用，且不具有足够的UV吸收能力。因此，这些材料当在准分子激光烧蚀过程期间暴露于扫描光束时剥离或剥落。
很多其它研究机构已提出使用光阻材料薄层作为牺牲层。然而，溶剂的成本和使用使得此选择方案在大批量制造中不具优势。
因此，需要用于移除激光后碎屑的改进的材料和方法。
发明内容
根据本发明的一或多个实施例，提供移除激光后碎屑的系统和方法，其可避免或减少现有技术的以上和其它缺点。
在一个实例实施例中，一种从晶片移除激光后碎屑的方法包含：在待图案化层上方形成牺牲层，其中所述牺牲层包括水溶性粘合剂和水溶性紫外光(UV)吸收剂；使用激光烧蚀图案化所述牺牲层和所述待图案化层；和用水移除所述牺牲层和沉积在所述牺牲层上的碎屑。
在另一实施例中，一种从晶片移除激光后碎屑的方法包含：组合水溶性粘合剂与水溶性紫外光(UV)吸收剂以形成溶液；将所述溶液应用于介电、玻璃或金属层上以形成牺牲层；使用激光烧蚀图案化所述牺牲层和所述介电、玻璃或金属层；和用水移除所述牺牲层和沉积在所述牺牲层上的碎屑。
在另一实施例中，一种从晶片移除激光后碎屑的方法包含：形成包括水溶性粘合剂和水溶性紫外光(UV)吸收剂的溶液；在介电层上形成牺牲层；使用准分子激光烧蚀图案化所述牺牲层和所述介电层；和通过水喷淋移除沉积在所述牺牲层上的碎屑和所述牺牲层。
在另一实施例中，一种从晶片移除激光后碎屑的方法包含：形成包括水溶性粘合剂和水溶性紫外光(UV)吸收剂的溶液；在介电层上形成牺牲层；使用准分子激光烧蚀图案化所述牺牲层和所述介电层；通过水喷淋移除沉积在所述牺牲层上的碎屑和所述牺牲层；和用醇(例如异丙醇或乙醇)冲洗所述介电层。
可从考虑在下文对本发明的系统和方法的某些实例实施例的详细描述，尤其是在此类考虑是结合附图进行时，将更好地理解本发明的系统和方法的以上和其它特征和优点，其中相同的参考标号用以标识在其一或多个图中所说明的元件。
附图说明
图1是根据本发明的实施例的移除激光后碎屑的方法的流程图；
图2A到2D是根据本发明的实施例的衬底经历移除激光后碎屑的方法的横截面侧视图；
图3A说明根据本发明的实施例的在激光烧蚀之后的晶片，其中在牺牲层的顶部上具有激光后碎屑；
图3B说明在喷水清洗之后的图3A的晶片，其中移除了牺牲层和激光后碎屑；和
图4说明根据本发明的实施例的用于移除激光后碎屑的系统的框图。
具体实施方式
描述根据一或多个实施例移除碎屑的牺牲层。所述牺牲层包含水溶性薄膜，其能够在例如扫描烧蚀或光点照射烧蚀的激光烧蚀期间吸收UV光，并且与待图案化的层一起被烧蚀。牺牲层易于在烧蚀过程之后用水移除。牺牲层的移除会一起带走在烧蚀期间沉积的所有碎屑。这产生干净的的所烧蚀特征以准备好用于后续过程。所描述的方法可用在用于半导体行业中的完整的裸片或麦克罗斯(macro)产品上，以及用在用于高级半导体封装应用的介电材料上，包含形成通孔、凸块、重布层、线和空间烧蚀，或作为双重金属镶嵌工艺流程同时烧蚀通孔和重布层的组合。
牺牲层包含至少两个组分：(1)水溶性粘合剂，以及(2)水溶性UV吸收剂。水溶性粘合剂是在暴露于UV光时为稳定的任何适合粘合剂。水溶性UV吸收剂是使用粘合剂粘合、呈现光稳定性且在暴露于UV光时为热稳定的任何适合吸收剂。所述组分经选择以形成与衬底上的其它层具有极少反应或几乎没有反应的牺牲层。在粘合剂与UV吸收剂混合时所形成的所述牺牲层吸收UV光，且也可用以图案化衬底上的多个特征而不会剥落或剥离。所述牺牲层形成约0.2微米到5微米厚的膜。在各种实施例中，所述膜为约0.5微米到2微米厚，且在其它实施例中，所述膜为约1微米到1.5微米厚。
适合粘合剂包含但不限于聚乙烯醇(PVA)、聚乙烯吡咯烷酮(PVP)、聚氧化乙烯(PEO)、聚丙烯酸材料(例如聚丙烯酸)、乙基纤维素和甲酯，或任何其它水溶性聚合物。适合UV吸附剂包含但不限于苯并三唑和三嗪类UV吸收剂材料，例如400-DW、477-DW，以及99-DW。
呈现改进的热稳定性的粘合剂是水溶性PEO聚合物。PolyoxTM WSR N-750和PolyoxTM WSR N-3000是适合的粘合剂，且两者可购自陶氏化学公司(The ChemicalCompany)。含有约1重量％到10重量％的PEO的溶液与水溶性UV吸收剂材料混合的混合物(例如400-DW溶液(可购自BASF的液体羟苯基三嗪))作为用以通过简单的水洗涤步骤移除烧蚀后碎屑的牺牲层经论证为有效的。在若干实施例中，牺牲层中的粘合剂与UV吸收剂的比率在约30:1到约5:1的范围内。在其它实施例中，牺牲层中的粘合剂与UV吸收剂的比率在约15:2到约10:1的范围内。
现将参考附图描述本发明的示范性实施例。
参考图1和2A到2D，描述用于从表面移除激光后碎屑的方法100。在步骤102和图2A处，在衬底200上形成介电层205或可通过激光图案化的其它材料(例如金属或玻璃)。在各种实施例中，所述介电层是有机介电膜。适合的图案化材料对于所属领域的一般技术人员是已知的。
移动到步骤104和图2B，在介电层205上方沉积或涂布牺牲层210。在一些实施例中，牺牲层210使用旋涂、喷涂或本领域普通技术人员已知的任何适合技术形成于介电层205的顶部上。
在步骤106和图2C处，将介电层205和牺牲层210暴露于来自UV激光器的光束214以通过掩模或光罩形成图案(例如，通孔和/或沟渠)，使得通过光束214扫描衬底200的将被烧蚀的所有区域。在各种实施例中，使用193nm、248nm、308nm或355nm UV准分子激光，例如其中使用掩模扫描或光点照射烧蚀。介电层205和牺牲层210吸收激光束214，且烧蚀衬底200的暴露区域。此激光烧蚀过程致使碎屑212从图案射出且沉积在围绕所烧蚀图案的牺牲层210的顶部上。
在步骤108和图2D处，喷淋水以移除牺牲层210上的碎屑212和牺牲层210两者。在另一实施例中，使用水浴来移除牺牲层210和碎屑212。使得介电层205的图案和表面干净且无碎屑以用于后续处理，例如晶种层沉积和镀覆。步骤108使用常规喷水技术。
有利的是，仅用水而非成本高或有危害的有机溶剂来移除牺牲层和碎屑。此外，牺牲层是热稳定的，在图案化期间不会剥落或剥离，且吸收UV辐射。牺牲层在准分子激光烧蚀过程期间为光点照射烧蚀工作(分步重复)或与扫描光束一起起作用。
在各种实施例中，在喷淋水之后，用醇冲洗介电层205以进一步清洗介电层205且有助于使介电层205变干。在一些实施例中，冲洗介电层205约15秒到约30秒。
图3A说明在烧蚀之后的晶片，其中最牺牲层的顶部上具有碎屑。图3B说明在喷水清洗之后的晶片，其中移除了牺牲层和碎屑。如可见，通过仅简单地用水洗涤，衬底清除了碎屑，是干净的。
实例1
将一点五(1.5)克PEO溶解于48.5mL去离子水中以形成3％PEO水溶液(粘合剂溶液)。在另一烧杯中测量十五(15)mL的此粘合剂溶液，且将0.5mL到2mL的400溶液(来自BASF的UV吸收剂)添加到所述粘合剂溶液。所述两种材料混合以形成带白色的均匀溶液。将其上已经涂布介电材料且完全固化的晶片(100到300mm)或层压干膜晶片放置在旋涂器工具上。将特定量的溶液施配在晶片的顶部上，且接着使晶片在室温下以2500rpm自旋30秒。所述量取决于晶片大小。对于100mm到150mm晶片，使用约5mL到10mL。对于150mm到200mm晶片，使用约10mL到15mL。对于300mm晶片，使用约15mL到25mL。施配在晶片上的所述量用以确保最佳覆盖率和均匀膜厚度。接着移除晶片，且允许在室温下使用氮气吹扫来使晶片变干。所形成的牺牲层厚度范围为从约0.5微米到2微米。
接下来，将经涂布晶片放置在UV激光器的夹盘上，且在介电或层压干膜上烧蚀所需特征。在烧蚀之后，检查晶片的碎屑、特征分辨率和临界尺寸。之后，将晶片载入到高压CO2离子化的去离子水喷淋工具(SUSS MicroTec Delta12AQ)中。将晶片暴露于处于以下条件的水喷淋：水压30巴到50巴，25℃，以及1000rpm自旋300秒，接着是以1500rpm进行60秒旋干。接着检查晶片的碎屑，且发现在介电或层压干膜的顶部上无任何材料残留。所有所烧蚀特征是干净的。
实例2
将一点五(1.5)克PEO溶解于48.5mL去离子水中以形成3％PEO水溶液(粘合剂溶液)。在另一烧杯中测量三十(30)mL的此粘合剂溶液，且将1mL到3mL的400溶液(来自BASF的UV吸收剂)添加到所述粘合剂溶液。所述两种材料混合以形成带白色的均匀溶液。将其上已经涂布介电材料且完全固化的200mm晶片或层压干膜晶片放置在旋涂器工具上。将约10mL到15mL的溶液施配在200mm晶片的顶部上，且接着使晶片在室温下以2500rpm自旋30秒。接着移除晶片，且允许在室温下使用氮气吹扫来使晶片变干。所形成的牺牲层厚度范围为从约0.5微米到2微米。
接下来，将经涂布晶片放置在UV激光器的夹盘上，且在介电或层压干膜上烧蚀所需特征。在烧蚀之后，检查晶片的碎屑、特征分辨率和临界尺寸。之后，将晶片载入到高压CO2离子化的去离子水喷淋工具(SUSS MicroTec Delta12AQ)中。将晶片暴露于处于以下条件的水喷淋：水压30巴到50巴，25℃，以及1000rpm自旋300秒。
接着将晶片暴露于异丙醇冲洗30秒，同时以1500rpm自旋，接着是以1500rpm进行60秒旋干。接着检查晶片的碎屑，且发现在介电或层压干膜的顶部上无任何材料残留。所有所烧蚀特征是干净的。
图4说明根据一或多个实施例的可用以移除激光后碎屑的系统400。系统400包含激光烧蚀系统405、水碎屑移除系统410，以及晶片处理系统415。激光烧蚀系统405使用激光源(例如，准分子激光)图案化介电层205和牺牲层210。接下来，在水碎屑移除系统410中使用水移除碎屑212和牺牲层210。水碎屑移除系统410可包含水喷淋或水浴。一旦移除了激光后碎屑212，可在晶片处理系统415中执行后续处理，例如晶种层沉积和镀覆。
如所属领域的技术人员到目前为止将理解，可在不脱离本发明的精神和范围的情况下对根据本发明的一或多个实施例的移除激光后碎屑的材料、设备、配置和方法进行很多修改、替代和变化。因此，本发明的范围应不限于如本文中所说明且描述的特定实施例，这是因为所述特定实施例仅通过其一些实例方式，而实际上，应与所附权利要求和其功能等效物完全相称。

Claims (28)

1.一种从晶片移除激光后碎屑的方法，其包括：
在待图案化层上方形成牺牲层，其中所述牺牲层包括水溶性粘合剂和水溶性紫外光UV吸收剂；
使用激光烧蚀图案化所述牺牲层和所述待图案化层；和
用水移除所述牺牲层和沉积在所述牺牲层上的碎屑。
2.根据权利要求1所述的方法，其中所述激光烧蚀使用准分子激光。
3.根据权利要求2所述的方法，其中准分子激光包括248nm、308nm或355nm准分子激光。
4.根据权利要求1所述的方法，其中所述水溶性粘合剂选自由以下各者组成的群组：聚乙烯醇PVA、聚乙烯吡咯烷酮PVP、聚氧化乙烯PEO、聚丙烯酸材料、乙基纤维素、甲酯，以及其组合。
5.根据权利要求1所述的方法，其中所述水溶性UV吸收剂选自由以下各者组成的群组：苯并三唑类UV吸收剂材料、三嗪类UV吸收剂材料，以及其组合。
6.根据权利要求1所述的方法，其中所述牺牲层为约0.5微米到2微米厚。
7.根据权利要求6所述的方法，其中所述牺牲层为约1微米到1.5微米厚。
8.根据权利要求1所述的方法，其中所述待图案化层包括介电材料、玻璃、金属，或其组合。
9.根据权利要求1所述的方法，其中所述牺牲层中的所述水溶性粘合剂与所述水溶性UV吸收剂的比率为从约30:1到约5:1。
10.根据权利要求1所述的方法，其中所述水溶性粘合剂包括聚氧化乙烯PEO，且所述水溶性UV吸收剂包括液体羟苯基三嗪。
11.根据权利要求1所述的方法，其中移除所述牺牲层和所述碎屑包括在所述牺牲层上喷淋水，或使用水浴。
12.根据权利要求1所述的方法，其进一步包括在用水移除所述牺牲层和碎屑之后，用醇冲洗所述待图案化层。
13.一种用于执行根据权利要求1所述的方法的系统，其包括：
激光烧蚀系统；
水碎屑移除系统；和
晶片处理系统。
14.一种从晶片移除激光后碎屑的方法，其包括：
组合水溶性粘合剂与水溶性紫外光UV吸收剂以形成溶液；
将所述溶液应用于介电、玻璃或金属层上以形成牺牲层；
使用激光烧蚀图案化所述牺牲层和所述介电、玻璃或金属层；和
用水移除所述牺牲层和沉积在所述牺牲层上的碎屑。
15.根据权利要求14所述的方法，其中所述溶液包括约1重量％到10重量％的所述水溶性粘合剂。
16.根据权利要求15所述的方法，其中所述水溶性粘合剂包括聚氧化乙烯PEO，且所述水溶性UV吸收剂包括液体羟苯基三嗪。
17.根据权利要求14所述的方法，其中所述激光烧蚀使用准分子激光。
18.根据权利要求14所述的方法，其中所述水溶性粘合剂选自由以下各者组成的群组：聚乙烯醇PVA、聚乙烯吡咯烷酮PVP、聚氧化乙烯PEO、聚丙烯酸材料、乙基纤维素、甲酯，以及其组合。
19.根据权利要求14所述的方法，其中所述水溶性UV吸收剂选自由以下各者组成的群组：苯并三唑类UV吸收剂材料、三嗪类UV吸收剂材料，以及其组合。
20.根据权利要求14所述的方法，其中所述牺牲层为约1微米到1.5微米厚。
21.根据权利要求14所述的方法，其进一步包括在用水移除所述牺牲层和碎屑之后，用醇冲洗所述介电、玻璃或金属层。
22.一种用于执行根据权利要求14所述的方法的系统，其包括：
激光烧蚀系统；
水碎屑移除系统；和
晶片处理系统。
23.一种从晶片移除激光后碎屑的方法，其包括：
形成包括水溶性粘合剂和水溶性紫外光UV吸收剂的溶液；
在介电层上形成牺牲层；
使用准分子激光烧蚀图案化所述牺牲层和所述介电层；和
通过水喷淋移除沉积在所述牺牲层上的碎屑和所述牺牲层。
24.根据权利要求23所述的方法，其中所述水溶性粘合剂包括聚氧化乙烯PEO，且所述水溶性UV吸收剂包括液体羟苯基三嗪。
25.根据权利要求24所述的方法，其中所述牺牲层中的所述聚氧化乙烯PEO与所述液体羟苯基三嗪的比率为从约30:1到约5:1。
26.根据权利要求23所述的方法，其中所述牺牲层为约1微米到1.5微米厚。
27.根据权利要求23所述的方法，其进一步包括在通过所述水喷淋移除所述牺牲层和碎屑之后，用醇冲洗所述介电层。
28.一种用于执行根据权利要求23所述的方法的系统，其包括：
激光烧蚀系统；
水碎屑移除系统；和
晶片处理系统。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107459266A (zh) * 2017-08-09 2017-12-12 维达力实业(深圳)有限公司 盖板玻璃及其制作方法
CN108890122A (zh) * 2018-07-28 2018-11-27 翔声科技（厦门）有限公司 一种陶瓷基板的划线方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10919794B2 (en) * 2017-12-04 2021-02-16 General Atomics Method of cutting glass using a laser
CN109671616B (zh) * 2018-02-28 2023-05-05 江苏大学 一种激光清洗硅片或透镜表面颗粒的方法
KR102122033B1 (ko) 2019-05-28 2020-06-11 에스케이씨코오롱피아이 주식회사 전자 부품의 패키징용 폴리아믹산 조성물 및 이를 이용하여 전자 부품을 패키징하는 방법
JP7287066B2 (ja) * 2019-04-01 2023-06-06 住友ベークライト株式会社 樹脂組成物および電子デバイス製造方法
EP4102543A1 (en) * 2021-06-09 2022-12-14 IMEC vzw A method for transferring a layer to a substrate
JP2024057491A (ja) * 2022-10-12 2024-04-24 信越半導体株式会社 接合型発光素子ウェーハの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1800258A (zh) * 2004-11-12 2006-07-12 东京应化工业株式会社 用于激光割片的保护膜剂和使用保护膜剂的晶片加工方法
US20090297462A1 (en) * 2003-09-04 2009-12-03 Yin Hessefort Water-soluble polyaminoamides as sunscreen agents
CN104722933A (zh) * 2013-12-20 2015-06-24 日化精工株式会社 激光加工用保护膜剂
CN104744987A (zh) * 2013-12-31 2015-07-01 奇美实业股份有限公司 用以形成保护层的溶液与其制造方法与使用方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6589650B1 (en) * 2000-08-07 2003-07-08 3M Innovative Properties Company Microscope cover slip materials
US6242156B1 (en) * 2000-06-28 2001-06-05 Gary Ganghui Teng Lithographic plate having a conformal radiation-sensitive layer on a rough substrate
JP2005059064A (ja) * 2003-08-13 2005-03-10 Toshiba Corp 加工方法及び半導体装置の製造方法
JP2006086516A (ja) * 2004-08-20 2006-03-30 Showa Denko Kk 半導体発光素子の製造方法
JP2006253402A (ja) 2005-03-10 2006-09-21 Nec Electronics Corp 半導体装置の製造方法
US8778780B1 (en) * 2005-10-13 2014-07-15 SemiLEDs Optoelectronics Co., Ltd. Method for defining semiconductor devices
US7892891B2 (en) * 2006-10-11 2011-02-22 SemiLEDs Optoelectronics Co., Ltd. Die separation
US7666555B2 (en) * 2006-12-29 2010-02-23 Intel Corporation Pellicle, methods of fabrication and methods of use for extreme ultraviolet lithography
US7820089B2 (en) * 2008-01-11 2010-10-26 Hitachi Via Mechanics, Ltd. Method for manufacturing three dimensional electrode elements for micro-batteries
JP6048400B2 (ja) * 2011-03-30 2016-12-21 大日本印刷株式会社 超臨界乾燥装置及び超臨界乾燥方法
US8728933B1 (en) * 2011-08-31 2014-05-20 Alta Devices, Inc. Laser cutting and chemical edge clean for thin-film solar cells
US20140273401A1 (en) 2013-03-14 2014-09-18 Wei-Sheng Lei Substrate laser dicing mask including laser energy absorbing water-soluble film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090297462A1 (en) * 2003-09-04 2009-12-03 Yin Hessefort Water-soluble polyaminoamides as sunscreen agents
CN1800258A (zh) * 2004-11-12 2006-07-12 东京应化工业株式会社 用于激光割片的保护膜剂和使用保护膜剂的晶片加工方法
CN104722933A (zh) * 2013-12-20 2015-06-24 日化精工株式会社 激光加工用保护膜剂
CN104744987A (zh) * 2013-12-31 2015-07-01 奇美实业股份有限公司 用以形成保护层的溶液与其制造方法与使用方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107459266A (zh) * 2017-08-09 2017-12-12 维达力实业(深圳)有限公司 盖板玻璃及其制作方法
CN108890122A (zh) * 2018-07-28 2018-11-27 翔声科技（厦门）有限公司 一种陶瓷基板的划线方法

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