1330765 玖、發明說·明 【發明所屬之技術領域】 本發明係關於光阻劑之剝離移除方法及裝置，是於加工 電子零件等之光鏤（photofabrication)技術中，藉由光學方 法剝離移除光阻劑者。 【先前技術】 光鏤技術係應用在電子裝置中所大量包含的電路基板 及IT裝置相關的微細電子零件等的各種加工零件中，對其 之需求越來越大。在該光鏤技術之加工步驟中，例如在製 作電路基板的情況，首先，充分洗淨矽、碳纖維或是金屬 基板，並塗敷光阻劑，通過印刷有所需電路圖案的光罩以 紫外線光進行曝光，以獲得光阻劑圖案。 該情況稱曝光部分會殘留之光阻劑爲負型，而曝光部分 會溶解之光阻劑爲正型。在殘留有任一光阻劑的狀態藉由 蝕刻、或是離子之摻雜、或是金屬的蒸鍍等進行圖案加工， 最後將光阻劑剝離。該步驟係根據情況反復進行著。 【發明內容】 (發明所欲解決的問題） 上述光鏤技術之加工步驟中，對於光阻劑的剝離移除步 驟，使用藉由藥品的溶解移除、或是膨潤剝離移除的方法， 尤其因爲最終步驟的光阻劑剝離的原因而使用大量的藥品 和水，伴隨著此的藥品廢液的處理及水資源的濫用等的問 題，隨著生產量的增加而變得越來越爲深刻。 爲此，在利用紫外線曝光形成電路圖案後，希望有非藉 7 312/發明說明書(補件)/92-07/92108088 1330765 由化學藥品而是藉由光學機構來剝離殘留的光阻劑的方 法，但是，迄今爲止尙未提出如此的方法，在此，本發明 者等經過刻意硏究的結果發現了藉由雷射光的光學機構而 可予以剝離的現象，本發明係基於此而提出以致完成者。 亦即，本發明留意上述問題，而以提供一可藉由光學機 構剝離移除光阻劑，防止環境污染、水資源的濫用，可提 高生產性的光阻劑之剝離移除方法及裝置爲其課題。 (解決問題之手段） 本發明作爲解決上述問題的方法，提供一種光阻劑之剝 離移除方法，其係從雷射光源傳送短脈衝的雷射光，將之 調整成等於或大於塗敷或積層於基板上的光阻劑的寬幅， 而將送來之雷射光照射於光阻劑上，此時調整所照射的雷 射光的強度，使之成爲足夠大的光強度，而可對應於光阻 劑的膜厚、材質而在光阻劑與基板的界面產生熱衝擊現 象，並且使光阻劑進一步剝離，一邊將該被調整之雷射光 以指定時間照射於光阻劑，一邊相對移動基板而從基板剝 離移除光阻劑。 作爲實施上述方法之裝置，爲一種光阻劑之剝離移除裝 置，其具備雷射產生裝置，用以產生短脈衝的雷射光；照 射頭，經由光學傳送路傳送所產生的雷射光，將該雷射光 調整爲指定的長度、寬度的帶狀的雷射光而照射於對象 物；及運送機構，運送塗敷或積層著對象物的光阻劑的基 板，上述照射頭將對於光阻劑的寬幅或此以上的長度進行 調整後雷射光，進一步調整其光強度使之成爲能充分對應 8 312/發明說明書(補件)/92-07/92108088 1330765 於光阻劑的膜厚、材質而在光阻劑與基板的界面產生熱衝 擊剝離現象、而且足以形成剝離之光強度之構成，一邊將 該被調整之雷射光以指定時間照射於光阻劑’一邊移動基 板而從基板剝離移除光阻劑。 根據上述光阻劑之剝離移除方法及裝置，可藉由光學機 構剝離移除光阻劑，使得用以光阻劑的移除所需要的大量 水資源的使用及藥品廢液之處理變得沒有必要。傳送之雷 射光係在照射於光阻劑前進行擴幅調整。該擴幅調整係相 對於光阻劑作爲細長帶狀的雷射光而以在光阻劑的寬幅方 向呈均等化的狀態而可予以照射的方式進行擴幅，且，該 被擴散照射之雷射光的強度係被調整其光強度以成爲於基 板及光阻劑的界面產生下述熱衝擊剝離現象的充分能量。 所謂的上述熱衝擊剝離現象是指在藉由照射雷射光而 於基板不會產生損傷、變形之下，而只有光阻劑從基板剝 離、變質或損傷的現象，此爲由本發明者等首次觀測而定 義的現象，被定義爲伴隨有如下的現象者》 1 ·於基板及光阻劑的界面伴隨著藉由雷射光之照射所造 成的急遽的溫度上升，且根據兩者的熱膨脹係數的差，使 得光阻劑急遽膨脹而從基板剝離。 2. 藉由含於光阻劑內的黏接成分進行氣化而於界面產生 氣泡，藉由該汽泡壓力使得光阻劑膨脹變形。 3. 使得光阻劑的變質變得無法保持對於基板的密接性 (結合性），且被脆弱化而剝離。 雷射光係以細長帶狀照射於光阻劑，因此，爲了遍及於 9 31刃發明說明書(補件)/92-07/92108088 1330765 基板上的光.阻劑全長剝離移除光阻劑，而使照射之雷射光 移動，或是，使基板移動而使得能夠將雷射光照射於光阻 劑的全長上。所剝離之光阻劑係從基板游離、且變質而被 剝離，當受到吹氣時即飛揚。只要由吸引裝置來吸引此即 可機械性處理光阻劑。 【實施方式】 以下，參照圖式說明本發明之實施形態。圖1爲顯示實 施形態之光阻劑剝離移除裝置的全體槪略構成圖》如圖所 示，光阻劑剝離移除裝置係以藉由一邊運送著載置於運送 裝置（輸送帶）c上的塗敷有光阻劑或層積有光阻劑的基板 Κ(Κ1〜K3)，一邊照射雷射光而從基板K剝離移除光阻劑 的方式所構成。雷射光係從雷射產生裝置10呈指定波長、 強度的雷射光而被送出，經由傳送通路1 1的反射鏡1 1 a 及光傳送管lib而送入配置於指定位置的照射頭12,並從 該照射頭1 2照射於基板K上的光阻劑。 圖示之雷射產生裝置10,係使用Nd: YAG的固體雷射。 其振盪波長爲532nm的短脈衝雷射光，具備Q開關，且以 頻率10Hz輸出光能800mJ/cm2的雷射光。由包含反射鏡 1 1 a的傳送通路1 1所傳送的雷射光係由照射頭1 2所聚 光、擴幅，而作爲帶狀（線狀）的雷射光照射於光阻劑。該 照射頭12雖未顯示詳細的結構，但是設爲可移動位置狀， 以便發揮將雷射光的強度分布均句化，且整形爲可適合基 板之大小的長度、寬度的薄片狀光束的作用》 上述傳送通路之最下游位置的反射鏡11a，係設於未圖 10 312/發明說明書(補件)/92-07/92108088 1330765 示的活動腎罩內，藉由移動該活動臂罩，傳送來自雷射產 生裝置的雷射光，且，可使照射頭移動’從而可將雷射光 照射於所需位置。 設置將剝離於照射頭1 2之下游側設置有：吹氣噴嘴1 3， 其將光阻劑吹向下游方向；及吸引裝置14(集塵器），其位 於其後方側，爲用以吸引回收被吹飛的光阻劑塵。又，運 送裝置C只要爲適合載置電路基板K(K1〜K3)的如輸送帶 形式者即可。又，雷射產生裝置1〇、吹氣噴嘴13、吸引裝 置14、運送裝置C的馬達Μ，均藉由控制裝置20針對雷 射光的發光定時、照射時間、各裝置的馬達的驅動來進行 控制。 在上述構成之實施形態之光阻劑剝離移除裝置中，藉由 基於雷射光照射所造成之熱衝擊剝離現象（熱衝擊）而剝離 移除電路基板Κ上的光阻劑。作爲由該裝置之中，被處理 之對象的光阻劑，在未圖示之其他處理步驟之中|如習知 技術段落中之說明般，係爲將光阻劑塗敷或是積層於電路 基板Κ上者。該其他處理步驟中，則是預塗敷光阻劑於電 路基板Κ上後，作爲相當於電子電路的圖案的正型或是負 型的光阻劑殘留。 於該電路基板施以蝕刻加工等的必要的加工處理後，光 阻劑變得並不需要，於是在以從基板表面全面移除該殘留 的光阻劑爲前提，運送該基板至該實施形態的移除裝置， 進行光阻劑的剝離移除處理。 作爲進行如此之處理的目的而具有光阻劑的電路基板 11 3發明說明書(補件)/92-07/92丨08088 1330765 K1，藉由運送裝置C，如在圖示例中以60cm/分的速度進 行運送，當到達照射頭1 2之正下方時進行雷射光照射，開 始光阻劑的剝離移除作業。參照圖2說明以下之處理。對 於具有圖2(a)之剖面的基板B上含有光阻劑R的電路基板 K(加工前），如圖2(b)所示，照射指定強度的短脈衝雷射 光。該情況，指定強度係指可對於光阻劑產生熱衝擊剝離 現象的#射光的強度。熱衝擊剝離現象係爲遵循前述定義 之現象。 以產生如此之現象的方式，邊以一定頻率之週期反復照 射上述短脈衝之雷射光，邊藉由運送裝置C將電路基板Κ 從圖2(c)漸進地送至圖2(d)，其間，光阻劑R藉由熱衝擊 剝離漸進地從基板Β上剝離。藉由從其傳送方向的開始端 至終端爲止運送電路基板Κ而對於光阻劑持續進行如此之 剝離，如圖2(e)、（f)所示，即可剝離整個光阻劑。 如圖2(g)所示，變質、剝離之光阻劑R成爲微細的剝離 片，從基板B離開，因此，當從吹氣噴嘴13吹出氣體時， 即向著上空飛舞，而向著運送方向的下游側移動。於是， 藉由設置於吹氣噴嘴13後方的吸引裝置14所吸引，如此 該光阻劑R的微細剝離片被處理。據此，無需如習知般爲 了光阻劑的剝離而需以溶液溶解的濕式處理步驟，從而可 高效進行光阻劑R的剝離’且’不會產生環境污染。 又，在上述實施形態之中，基板的材料並無特別的限 定，圖示之例中是使用金屬（Ni合金），不過也可採用其他 的半導體、玻璃、碳纖維、陶瓷等各種的材料。又，短脈 12 312/發明說明書(補件)/92-07/92108088 1330765 衝之雷射產生裝置，只要是可以振盪出在光所照射位置上 成能爲可產生上述熱衝擊剝離現象的強度的雷射光，並不 拘於其是固體雷射、類似激發雷射的氣體雷射、或是半導 體雷射等的雷射的振蕩形式，而可使用任一形式的雷射產 生裝置。 [實施例] 關於實施藉由上述之光阻劑之剝離移除方法的裝置所 爲之電路基板κ的處理例，爲如下所述。 •雷射產生裝置10 : Nd : YAG雷射、附設Q開關 振盪波長 532nm 頻率1 0Hz 光能 800mJ/cm2 •照射頭12的照射面積 500mmxlmm .運送速度 60cm/min 來自上述雷射產生裝置1 0的雷射光，在照射於光阻劑 時，照射於5 0 0 X 1mm 2 = 5 cm2的面積。藉此，以平均化成爲 8 0 0/5 = 1 60 mJ/cm2的光強度來進行照射，此時以該光能的 程度便可獲得充分的剝離移除效果。 (發明之效果） 以上，如以上詳細之說明，在本發明之光阻劑之剝離移 除方法及裝置之中，因爲將雷射光擴幅調整爲可於光阻劑 及基板的界面產生熱衝擊剝離現象的必要強度來照射於光 阻劑上，而且使雷射光或是基板中任一者移動而遍及全長 將雷射光照射於光阻劑，因此，可藉由光學機構而可有效 13 312/發明說明書(補件)/92-07/92108088 1330765 剝離移除光阻劑，藉此，可防止環境污染、水資源的大量 消耗，並可將光阻劑的剝離移除作業機械化而獲得飛躍性 地提高生產性的顯著功效。 【圖式簡單說明】 圖1爲顯示實施形態之光阻劑剝離移除裝置的全體槪略 構成圖。 圖2(a)〜（g)爲光阻劑之剝離移除處理的說明圖。 (元件符號說明） B 基板 C 運送裝置（輸送帶） K(K1〜K3)電路基板 Μ 馬達 R 光阻劑 10 雷射產生裝置 11 傳送通路 11a 反射鏡 lib 光傳送管 12 照射頭 13 吹氣噴嘴 14 吸引裝置（集塵器） 20 控制裝置 14 312/發明說明書(補件)/92-07/92108088BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and a device for removing and removing a photoresist, which are optically peeled off in a photofabrication technique for processing electronic components and the like. In addition to photoresist. [Prior Art] The optical ray technology is applied to various processing parts such as circuit boards and electronic components related to IT devices which are widely included in electronic devices. In the processing step of the aperture technology, for example, in the case of manufacturing a circuit board, first, the ruthenium, carbon fiber or metal substrate is sufficiently washed, and a photoresist is applied, and the ray mask printed with the desired circuit pattern is ultraviolet ray. Light is exposed to obtain a photoresist pattern. In this case, the photoresist remaining in the exposed portion is a negative type, and the photoresist in which the exposed portion is dissolved is a positive type. The pattern is processed by etching, ion doping, or metal vapor deposition in a state in which any photoresist remains, and finally the photoresist is peeled off. This step is repeated as the case may be. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) In the processing step of the above-mentioned optical tweezing technique, the peeling and removing step of the photoresist is carried out by means of dissolution removal of the drug or removal by swelling and peeling, in particular Because of the large amount of chemicals and water used for the peeling of the photoresist in the final step, problems such as the disposal of the drug waste liquid and the abuse of water resources become more and more profound as the production volume increases. . For this reason, after forming a circuit pattern by ultraviolet exposure, it is desirable to have a method of removing the residual photoresist by chemical means, but by optical means, by using the method of the invention (92)/92-07/92108088 1330765. However, the present invention has not been proposed so far, and the present inventors have found that the optical mechanism can be peeled off by the optical mechanism of the laser light through deliberate research, and the present invention is based on this. By. That is, the present invention pays attention to the above problems, and provides a peeling and removing method and apparatus for a photoresist which can improve productivity by removing and removing a photoresist by an optical mechanism, preventing environmental pollution and abuse of water resources. Its subject. Means for Solving the Problem As a method for solving the above problems, the present invention provides a peeling and removing method of a photoresist which transmits a short pulse of laser light from a laser light source and adjusts it to be equal to or larger than a coating or layering. The width of the photoresist on the substrate is irradiated onto the photoresist, and the intensity of the irradiated laser light is adjusted to be a sufficiently large light intensity, which corresponds to the light. The film thickness and material of the resist cause thermal shock at the interface between the photoresist and the substrate, and the photoresist is further peeled off, and the adjusted laser light is irradiated to the photoresist for a predetermined period of time while moving the substrate relatively. The photoresist is removed from the substrate. As a device for carrying out the above method, a photoresist stripping removal device is provided with a laser generating device for generating short-pulse laser light; and an irradiation head for transmitting the generated laser light via an optical transmission path, The laser beam is irradiated to the object with a predetermined length and width of strip-shaped laser light, and the transport mechanism transports a substrate coated with or coated with the photoresist of the object, and the irradiation head is wider for the photoresist. The laser light is adjusted after the length of the web or the above, and the light intensity is further adjusted so as to fully correspond to the film thickness and material of the photoresist in the specification of the invention (removal)/92-07/92108088 1330765. The interface between the photoresist and the substrate generates a thermal shock peeling phenomenon and is sufficient to form a light intensity of the peeling, and the adjusted laser light is irradiated to the photoresist while irradiating the substrate with a predetermined time to remove light from the substrate. Resistor. According to the above-mentioned photoresist stripping removal method and apparatus, the photoresist can be stripped and removed by the optical mechanism, so that the use of a large amount of water resources and the treatment of the chemical waste liquid required for the removal of the photoresist are become no need. The thunder of the transmitted light is amplitude-adjusted before being irradiated to the photoresist. The expansion adjustment is performed so that the photoresist can be irradiated in a state in which the photoresist is elongated in the wide direction of the photoresist as the elongated strip-shaped laser light, and the diffused and irradiated thunder is irradiated. The intensity of the light is adjusted to be a sufficient energy to cause the following thermal shock peeling phenomenon at the interface between the substrate and the photoresist. The above-mentioned thermal shock peeling phenomenon refers to a phenomenon in which only the photoresist is peeled off, deteriorated, or damaged from the substrate by irradiation of the laser light without causing damage or deformation of the substrate, which is the first observation by the inventors of the present invention. The defined phenomenon is defined as the phenomenon accompanied by the following phenomena: 1. The interface between the substrate and the photoresist is accompanied by an imminent temperature rise caused by the irradiation of the laser light, and the difference in thermal expansion coefficient between the two is obtained. The photoresist is rapidly expanded to be peeled off from the substrate. 2. Gasification occurs at the interface by vaporization of the bonding component contained in the photoresist, and the photoresist is expanded and deformed by the bubble pressure. 3. The deterioration of the photoresist is prevented from maintaining adhesion to the substrate (bonding property), and it is weakened and peeled off. The laser light is irradiated to the photoresist in an elongated strip shape, and therefore, in order to remove the photoresist over the entire length of the light resisting agent on the substrate of the invention (repair)/92-07/92108088 1330765, The irradiated laser light is moved or the substrate is moved so that the laser light can be irradiated onto the entire length of the photoresist. The peeled photoresist is released from the substrate and deteriorated, and is peeled off, and is flung when it is blown. The photoresist can be mechanically treated as long as it is attracted by the attraction means. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the entire configuration of a photoresist stripping and removing apparatus according to an embodiment. As shown in the figure, a photoresist stripping and removing apparatus is carried by a carrier on a transporting device (conveyor belt). The upper surface is coated with a photoresist or a substrate Κ (Κ1 to K3) in which a photoresist is laminated, and is irradiated with laser light to remove and remove the photoresist from the substrate K. The laser light is sent out from the laser light generating device 10 at a predetermined wavelength and intensity, and is sent to the irradiation head 12 disposed at a predetermined position via the mirror 1 1 a of the transmission path 1 1 and the light transmission tube lib. The photoresist on the substrate K is irradiated from the irradiation head 12. The illustrated laser generating device 10 is a solid laser using Nd:YAG. The short-pulse laser light having an oscillation wavelength of 532 nm has a Q-switch and outputs laser light having a light energy of 800 mJ/cm 2 at a frequency of 10 Hz. The laser beam transmitted from the transmission path 1 1 including the mirror 1 1 a is condensed and expanded by the irradiation head 12, and is irradiated as a strip-shaped (linear) laser light to the photoresist. Although the irradiation head 12 does not have a detailed structure, it is in a movable position shape, so that the intensity distribution of the laser light is uniformized and shaped into a sheet-like light beam that can be adapted to the length and width of the substrate. The mirror 11a at the most downstream position of the above-mentioned transmission path is provided in the movable kidney cover not shown in FIG. 10 312 / invention specification (supplement) / 92-07/92108088 1330765, and the movement is transmitted by moving the movable arm cover. The laser light from the laser generating device, and the head can be moved 'to expose the laser light to a desired position. The downstream side of the irradiation head 1 is disposed to be provided with: a blowing nozzle 13 that blows the photoresist in a downstream direction; and a suction device 14 (dust collector) on the rear side thereof for attracting Recycle the blown photoresist dust. Further, the transport device C may be in the form of a conveyor belt suitable for mounting the circuit board K (K1 to K3). Further, the laser generating device 1A, the air blowing nozzle 13, the suction device 14, and the motor C of the transport device C are controlled by the control device 20 for the light emission timing of the laser light, the irradiation time, and the driving of the motors of the respective devices. . In the photoresist stripping and removing apparatus of the above-described embodiment, the photoresist on the circuit board is peeled off by thermal shock peeling (thermal shock) caused by laser light irradiation. As a photoresist to be processed among the devices, in other processing steps not shown, as described in the prior art paragraph, the photoresist is coated or laminated on the circuit. The substrate is on the top. In the other processing steps, after the photoresist is precoated on the circuit board, a positive or negative photoresist remaining as a pattern of the electronic circuit remains. After the necessary processing such as etching processing is performed on the circuit board, the photoresist is not required, and the substrate is transported to the embodiment on the premise that the residual photoresist is completely removed from the surface of the substrate. The removing device performs a stripping removal process of the photoresist. As a circuit substrate having a photoresist for the purpose of performing such processing, the invention specification (supplement) / 92-07/92 丨 08088 1330765 K1, by means of the transport device C, as in the example of the figure, 60 cm / min The speed is carried out, and laser light is irradiated when it is directly under the irradiation head 12, and the peeling removal operation of the photoresist is started. The following processing will be described with reference to Fig. 2 . The circuit board K (before processing) containing the photoresist R on the substrate B having the cross section of Fig. 2(a) is irradiated with short-pulse laser light of a predetermined intensity as shown in Fig. 2(b). In this case, the specified intensity means the intensity of #射光 which can cause a thermal shock peeling phenomenon to the photoresist. The thermal shock peeling phenomenon is a phenomenon that follows the above definition. In such a manner as to cause such a phenomenon, the short-pulse laser light is repeatedly irradiated with a period of a certain frequency, and the circuit board 渐 is progressively sent from FIG. 2(c) to FIG. 2(d) by the transport device C. The photoresist R is gradually peeled off from the substrate by thermal shock peeling. By continuously transporting the circuit board 从 from the beginning of the transfer direction to the terminal, the photoresist is continuously peeled off, and as shown in Figs. 2(e) and (f), the entire photoresist can be peeled off. As shown in Fig. 2(g), the deteriorated and peeled photoresist R becomes a fine release sheet and is separated from the substrate B. Therefore, when the gas is blown from the air blowing nozzle 13, the air is blown upward, and the direction is toward the transport direction. The downstream side moves. Then, the fine peeling piece of the photoresist R is processed by being sucked by the suction device 14 provided behind the air blowing nozzle 13. According to this, it is not necessary to carry out the wet processing step of dissolving the photoresist as in the prior art, so that the peeling of the photoresist R can be efficiently performed and the environmental pollution is not caused. Further, in the above embodiment, the material of the substrate is not particularly limited. In the illustrated example, a metal (Ni alloy) is used. However, various materials such as semiconductor, glass, carbon fiber, and ceramic may be used. Moreover, the short pulse 12 312 / invention manual (supplement) / 92-07 / 92108088 1330765 laser laser generating device, as long as it can oscillate at the position where the light is irradiated, the intensity of the thermal shock peeling phenomenon can be generated The laser light is not limited to a solid laser, a gas laser like a laser, or a laser of a semiconductor laser, and any type of laser generating device can be used. [Examples] A treatment example of the circuit board κ which is a device for performing the peeling and removing method of the above-described photoresist is as follows. • Laser generating device 10: Nd: YAG laser, attached Q-switching oscillation wavelength 532 nm Frequency 10 0 Hz Light energy 800 mJ/cm 2 • Irradiation area of the irradiation head 12 500 mm x l mm. Transport speed 60 cm/min From the above-described laser generating device 10 The laser light is irradiated to an area of 500 × 1 mm 2 = 5 cm 2 when irradiated with the photoresist. Thereby, the light is averaged to a light intensity of 80 0/5 = 1 60 mJ/cm 2 , and at this time, a sufficient peeling removal effect can be obtained with the degree of the light energy. (Effects of the Invention) As described above, in the method and apparatus for removing and removing the photoresist of the present invention, the laser light is expanded to be thermally shockable at the interface between the photoresist and the substrate. The necessary strength of the peeling phenomenon is irradiated onto the photoresist, and any of the laser light or the substrate is moved to irradiate the laser light to the photoresist over the entire length, and therefore, it can be effective by the optical mechanism 13 312 / Disclosure of Invention (Repair)/92-07/92108088 1330765 Stripping and removing the photoresist, thereby preventing environmental pollution, large consumption of water resources, and mechanization of the stripping removal operation of the photoresist to obtain a leap Significantly improve the productivity of production. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the overall configuration of a photoresist stripping and removing apparatus according to an embodiment. 2(a) to (g) are explanatory views of the peeling removal process of the photoresist. (Description of component symbols) B Substrate C Conveying device (conveyor belt) K (K1 to K3) circuit board 马达 Motor R photoresist 10 Laser generating device 11 Transmission path 11a Mirror lib Light transmission tube 12 Irradiation head 13 Air blowing nozzle 14 Suction device (dust collector) 20 Control device 14 312 / invention manual (supplement) /92-07/92108088