JP2008034601A5 - - Google Patents

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Publication number
JP2008034601A5
JP2008034601A5 JP2006205930A JP2006205930A JP2008034601A5 JP 2008034601 A5 JP2008034601 A5 JP 2008034601A5 JP 2006205930 A JP2006205930 A JP 2006205930A JP 2006205930 A JP2006205930 A JP 2006205930A JP 2008034601 A5 JP2008034601 A5 JP 2008034601A5
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JP
Japan
Prior art keywords
island
semiconductor element
lead
semiconductor device
connecting portion
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Application number
JP2006205930A
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English (en)
Japanese (ja)
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JP2008034601A (ja
JP4769965B2 (ja
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Priority to JP2006205930A priority Critical patent/JP4769965B2/ja
Priority claimed from JP2006205930A external-priority patent/JP4769965B2/ja
Publication of JP2008034601A publication Critical patent/JP2008034601A/ja
Publication of JP2008034601A5 publication Critical patent/JP2008034601A5/ja
Application granted granted Critical
Publication of JP4769965B2 publication Critical patent/JP4769965B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006205930A 2006-07-28 2006-07-28 半導体装置およびその製造方法 Expired - Fee Related JP4769965B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006205930A JP4769965B2 (ja) 2006-07-28 2006-07-28 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006205930A JP4769965B2 (ja) 2006-07-28 2006-07-28 半導体装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011089727A Division JP5342596B2 (ja) 2011-04-14 2011-04-14 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2008034601A JP2008034601A (ja) 2008-02-14
JP2008034601A5 true JP2008034601A5 (enExample) 2009-08-20
JP4769965B2 JP4769965B2 (ja) 2011-09-07

Family

ID=39123720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006205930A Expired - Fee Related JP4769965B2 (ja) 2006-07-28 2006-07-28 半導体装置およびその製造方法

Country Status (1)

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JP (1) JP4769965B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5112972B2 (ja) * 2008-06-30 2013-01-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置およびその製造方法
JP2010109253A (ja) * 2008-10-31 2010-05-13 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP5216735B2 (ja) * 2009-09-30 2013-06-19 新電元工業株式会社 半導体パッケージ
JP5809440B2 (ja) * 2011-05-10 2015-11-10 ローム株式会社 Ｌｅｄモジュール
JP7019957B2 (ja) * 2017-03-31 2022-02-16 富士電機株式会社 半導体装置および製造方法
EP4057339A1 (en) * 2021-03-10 2022-09-14 Hitachi Energy Switzerland AG Base plate having sidewall, power semiconductor module comprising the base plate and method for producing the base plate
JP2022190980A (ja) 2021-06-15 2022-12-27 富士電機株式会社 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826176B2 (ja) * 1975-05-02 1983-06-01 三菱電機株式会社 樹脂封止型半導体装置
JPS6015955A (ja) * 1983-07-08 1985-01-26 Hitachi Micro Comput Eng Ltd 半導体装置
JPH0465157A (ja) * 1990-07-05 1992-03-02 Hitachi Cable Ltd パワートランジスタ用リードフレームとその製造方法
JPH05299569A (ja) * 1992-04-24 1993-11-12 Sony Corp リードフレームおよびそれを用いた樹脂封止型半導体装置
JPH0992757A (ja) * 1995-09-21 1997-04-04 Sony Corp 半導体装置
JP3422936B2 (ja) * 1998-07-17 2003-07-07 新光電気工業株式会社 リードフレーム及びその製造方法
JP2001135767A (ja) * 1999-11-01 2001-05-18 Hitachi Ltd 半導体装置およびその製造方法
JP2002009220A (ja) * 2000-06-23 2002-01-11 Hitachi Ltd 樹脂封止型半導体装置
JP3871587B2 (ja) * 2002-03-18 2007-01-24 日本インター株式会社 樹脂封止型半導体装置

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