JP2008013848A5 - - Google Patents

Info

Publication number

JP2008013848A5

JP2008013848A5 JP2007148856A JP2007148856A JP2008013848A5 JP 2008013848 A5 JP2008013848 A5 JP 2008013848A5 JP 2007148856 A JP2007148856 A JP 2007148856A JP 2007148856 A JP2007148856 A JP 2007148856A JP 2008013848 A5 JP2008013848 A5 JP 2008013848A5

Authority

JP

Japan

Prior art keywords

film

film forming

transition metal

forming method

gas

Prior art date

2007-06-05

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Withdrawn

Links

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• 239000010408 film Substances 0.000 claims description 72
• 229910052723 transition metal Inorganic materials 0.000 claims description 52
• 150000003624 transition metals Chemical class 0.000 claims description 52
• 239000011572 manganese Substances 0.000 claims description 51
• 238000000034 method Methods 0.000 claims description 42
• 239000010409 thin film Substances 0.000 claims description 36
• 239000002994 raw material Substances 0.000 claims description 30
• 238000010438 heat treatment Methods 0.000 claims description 29
• RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 28
• 229910052802 copper Inorganic materials 0.000 claims description 28
• 239000010949 copper Substances 0.000 claims description 28
• 239000000463 material Substances 0.000 claims description 14
• 125000002524 organometallic group Chemical group 0.000 claims description 7
• 238000003860 storage Methods 0.000 claims description 7
• 238000005229 chemical vapour deposition Methods 0.000 claims description 6
• 229910052748 manganese Inorganic materials 0.000 claims description 6
• 238000000151 deposition Methods 0.000 claims description 5
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
• 125000000217 alkyl group Chemical group 0.000 claims description 4
• 238000000137 annealing Methods 0.000 claims description 4
• 238000000231 atomic layer deposition Methods 0.000 claims description 4
• 238000004590 computer program Methods 0.000 claims description 4
• 229910052751 metal Inorganic materials 0.000 claims description 4
• 239000002184 metal Substances 0.000 claims description 4
• -1 pentanedienyl group Chemical group 0.000 claims description 4
• PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
• 230000015572 biosynthetic process Effects 0.000 claims description 3
• 239000007769 metal material Substances 0.000 claims description 3
• RDMHXWZYVFGYSF-LNTINUHCSA-N (z)-4-hydroxypent-3-en-2-one;manganese Chemical compound [Mn].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O RDMHXWZYVFGYSF-LNTINUHCSA-N 0.000 claims description 2
• VNNDVNZCGCCIPA-FDGPNNRMSA-N (z)-4-hydroxypent-3-en-2-one;manganese Chemical compound [Mn].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O VNNDVNZCGCCIPA-FDGPNNRMSA-N 0.000 claims description 2
• BZORFPDSXLZWJF-UHFFFAOYSA-N N,N-dimethyl-1,4-phenylenediamine Chemical compound CN(C)C1=CC=C(N)C=C1 BZORFPDSXLZWJF-UHFFFAOYSA-N 0.000 claims description 2
• 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
• 229910052782 aluminium Inorganic materials 0.000 claims description 2
• 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 2
• 229910052804 chromium Inorganic materials 0.000 claims description 2
• 239000011365 complex material Substances 0.000 claims description 2
• 150000004696 coordination complex Chemical class 0.000 claims description 2
• NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 2
• 229910052732 germanium Inorganic materials 0.000 claims description 2
• 229910052749 magnesium Inorganic materials 0.000 claims description 2
• 150000002739 metals Chemical class 0.000 claims description 2
• 229910052759 nickel Inorganic materials 0.000 claims description 2
• 229910052758 niobium Inorganic materials 0.000 claims description 2
• 229910052763 palladium Inorganic materials 0.000 claims description 2
• 238000007747 plating Methods 0.000 claims description 2
• 229910052697 platinum Inorganic materials 0.000 claims description 2
• 229920000412 polyarylene Polymers 0.000 claims description 2
• 229910052702 rhenium Inorganic materials 0.000 claims description 2
• 229910052703 rhodium Inorganic materials 0.000 claims description 2
• 239000000377 silicon dioxide Substances 0.000 claims description 2
• 229910052713 technetium Inorganic materials 0.000 claims description 2
• 229910052718 tin Inorganic materials 0.000 claims description 2
• 229910052719 titanium Inorganic materials 0.000 claims description 2
• 229910052720 vanadium Inorganic materials 0.000 claims description 2
• 229910052727 yttrium Inorganic materials 0.000 claims description 2
• 229910052726 zirconium Inorganic materials 0.000 claims description 2
• 239000007789 gas Substances 0.000 claims 25
• 238000006073 displacement reaction Methods 0.000 claims 1
• 238000011065 in-situ storage Methods 0.000 description 2
• 229910044991 metal oxide Inorganic materials 0.000 description 2
• 150000004706 metal oxides Chemical class 0.000 description 2
• 230000006866 deterioration Effects 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
• 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
• 239000010955 niobium Substances 0.000 description 1
• 239000004065 semiconductor Substances 0.000 description 1