JP2008013848A - 成膜装置及び成膜方法 - Google Patents

成膜装置及び成膜方法 Download PDF

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Publication number
JP2008013848A
JP2008013848A JP2007148856A JP2007148856A JP2008013848A JP 2008013848 A JP2008013848 A JP 2008013848A JP 2007148856 A JP2007148856 A JP 2007148856A JP 2007148856 A JP2007148856 A JP 2007148856A JP 2008013848 A JP2008013848 A JP 2008013848A
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Japan
Prior art keywords
film
gas
film forming
source gas
forming method
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JP2007148856A
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English (en)
Japanese (ja)
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JP2008013848A5 (OSRAM
Inventor
Kenji Matsumoto
賢治 松本
Junichi Koike
淳一 小池
Koji Neishi
浩司 根石
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Tohoku University NUC
Tokyo Electron Ltd
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Tohoku University NUC
Tokyo Electron Ltd
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Application filed by Tohoku University NUC, Tokyo Electron Ltd filed Critical Tohoku University NUC
Priority to JP2007148856A priority Critical patent/JP2008013848A/ja
Priority to US12/303,831 priority patent/US20100233876A1/en
Priority to PCT/JP2007/061637 priority patent/WO2007142329A1/ja
Priority to KR1020087029964A priority patent/KR20090009962A/ko
Publication of JP2008013848A publication Critical patent/JP2008013848A/ja
Publication of JP2008013848A5 publication Critical patent/JP2008013848A5/ja
Withdrawn legal-status Critical Current

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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
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    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007148856A 2006-06-08 2007-06-05 成膜装置及び成膜方法 Withdrawn JP2008013848A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007148856A JP2008013848A (ja) 2006-06-08 2007-06-05 成膜装置及び成膜方法
US12/303,831 US20100233876A1 (en) 2006-06-08 2007-06-08 Film forming apparatus, film forming method, computer program and storage medium
PCT/JP2007/061637 WO2007142329A1 (ja) 2006-06-08 2007-06-08 成膜装置、成膜方法、コンピュータプログラムおよび記憶媒体
KR1020087029964A KR20090009962A (ko) 2006-06-08 2007-06-08 성막 장치, 성막 방법, 컴퓨터 프로그램 및 기억 매체

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006159942 2006-06-08
JP2007148856A JP2008013848A (ja) 2006-06-08 2007-06-05 成膜装置及び成膜方法

Publications (2)

Publication Number Publication Date
JP2008013848A true JP2008013848A (ja) 2008-01-24
JP2008013848A5 JP2008013848A5 (OSRAM) 2010-03-25

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JP2007148856A Withdrawn JP2008013848A (ja) 2006-06-08 2007-06-05 成膜装置及び成膜方法

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US (1) US20100233876A1 (OSRAM)
JP (1) JP2008013848A (OSRAM)
KR (1) KR20090009962A (OSRAM)
WO (1) WO2007142329A1 (OSRAM)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124275A (ja) * 2006-11-13 2008-05-29 Fujitsu Ltd 半導体装置の製造方法
WO2009110330A1 (ja) * 2008-03-03 2009-09-11 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP2010050359A (ja) * 2008-08-22 2010-03-04 Rohm Co Ltd 半導体装置の製造方法
JP2010073736A (ja) * 2008-09-16 2010-04-02 Rohm Co Ltd 半導体装置の製造方法
JP2010098196A (ja) * 2008-10-17 2010-04-30 Hitachi Cable Ltd 配線構造及び配線構造の製造方法
JP2010212497A (ja) * 2009-03-11 2010-09-24 Tokyo Electron Ltd 半導体装置の製造方法
WO2010147140A1 (ja) * 2009-06-16 2010-12-23 東京エレクトロン株式会社 バリヤ層、成膜方法及び処理システム
WO2010147141A1 (ja) * 2009-06-16 2010-12-23 東京エレクトロン株式会社 成膜方法、前処理装置及び処理システム
US20110095427A1 (en) * 2008-05-13 2011-04-28 Micron Technology, Inc. Low-resistance interconnects and methods of making same
CN102132398A (zh) * 2008-03-21 2011-07-20 哈佛学院院长等 用于互连的自对准阻挡层
JP2012184449A (ja) * 2011-03-03 2012-09-27 Taiyo Nippon Sanso Corp 金属薄膜の製膜方法、金属薄膜、および金属薄膜の製膜装置
KR101318506B1 (ko) 2009-07-14 2013-10-16 도쿄엘렉트론가부시키가이샤 성막 방법
US9266146B2 (en) 2010-06-28 2016-02-23 Tokyo Electron Limited Film forming method and processing system

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5196467B2 (ja) * 2007-05-30 2013-05-15 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
WO2009001780A1 (ja) * 2007-06-22 2008-12-31 Rohm Co., Ltd. 半導体装置およびその製造方法
JP5366235B2 (ja) * 2008-01-28 2013-12-11 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
KR20110084523A (ko) 2008-11-07 2011-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8168528B2 (en) * 2009-06-18 2012-05-01 Kabushiki Kaisha Toshiba Restoration method using metal for better CD controllability and Cu filing
JP5466890B2 (ja) * 2009-06-18 2014-04-09 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記憶媒体
WO2011050073A1 (en) 2009-10-23 2011-04-28 President And Fellows Of Harvard College Self-aligned barrier and capping layers for interconnects
KR101931206B1 (ko) 2009-11-13 2018-12-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR20130045418A (ko) 2010-04-23 2013-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US8461683B2 (en) * 2011-04-01 2013-06-11 Intel Corporation Self-forming, self-aligned barriers for back-end interconnects and methods of making same
KR101767855B1 (ko) 2013-07-02 2017-08-11 울트라테크 인크. 격자 전위들을 제거하기 위한 급속 열적 프로세싱에 의한 헤테로에피택셜 층들의 형성
US20150155313A1 (en) 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10825724B2 (en) * 2014-04-25 2020-11-03 Taiwan Semiconductor Manufacturing Company Metal contact structure and method of forming the same in a semiconductor device
US9613906B2 (en) * 2014-06-23 2017-04-04 GlobalFoundries, Inc. Integrated circuits including modified liners and methods for fabricating the same
US9613856B1 (en) 2015-09-18 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming metal interconnection
JP6242933B2 (ja) * 2016-03-31 2017-12-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US10727118B2 (en) * 2017-11-30 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device and pre-clean apparatus for semiconductor device
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
US11004736B2 (en) * 2019-07-19 2021-05-11 International Business Machines Corporation Integrated circuit having a single damascene wiring network
KR102867763B1 (ko) 2019-11-21 2025-10-14 삼성전자주식회사 반도체 장치의 제조방법 및 반도체 장치의 제조 설비

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3840650B2 (ja) * 1998-01-21 2006-11-01 株式会社トリケミカル研究所 配線用銅合金膜形成材料および配線用銅合金膜形成方法
JP3449960B2 (ja) * 2000-02-25 2003-09-22 沖電気工業株式会社 半導体装置の製造方法
US6491978B1 (en) * 2000-07-10 2002-12-10 Applied Materials, Inc. Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
JP4478038B2 (ja) * 2004-02-27 2010-06-09 株式会社半導体理工学研究センター 半導体装置及びその製造方法
JP4651955B2 (ja) * 2004-03-03 2011-03-16 東京エレクトロン株式会社 成膜方法
JP5068925B2 (ja) * 2004-09-03 2012-11-07 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット
JP2006128288A (ja) * 2004-10-27 2006-05-18 Tokyo Electron Ltd 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体
US20080070017A1 (en) * 2005-02-10 2008-03-20 Naoki Yoshii Layered Thin Film Structure, Layered Thin Film Forming Method, Film Forming System and Storage Medium
JP4236201B2 (ja) * 2005-08-30 2009-03-11 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
US20070264816A1 (en) * 2006-05-12 2007-11-15 Lavoie Adrien R Copper alloy layer for integrated circuit interconnects
US20080026576A1 (en) * 2006-07-31 2008-01-31 Rohm And Haas Electronic Materials Llc Organometallic compounds
US20080223287A1 (en) * 2007-03-15 2008-09-18 Lavoie Adrien R Plasma enhanced ALD process for copper alloy seed layers

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124275A (ja) * 2006-11-13 2008-05-29 Fujitsu Ltd 半導体装置の製造方法
WO2009110330A1 (ja) * 2008-03-03 2009-09-11 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP2009212232A (ja) * 2008-03-03 2009-09-17 Tokyo Electron Ltd 半導体装置の製造方法、半導体製造装置及び記憶媒体
US8349725B2 (en) 2008-03-03 2013-01-08 Tokyo Electron Limited Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and storage medium
KR101649714B1 (ko) 2008-03-21 2016-08-30 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 상호접속부를 위한 자기정렬 배리어 층
CN102132398A (zh) * 2008-03-21 2011-07-20 哈佛学院院长等 用于互连的自对准阻挡层
KR20120020035A (ko) * 2008-03-21 2012-03-07 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 상호접속부를 위한 자기정렬 배리어 층
KR101803221B1 (ko) 2008-03-21 2017-11-29 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 상호접속부를 위한 자기정렬 배리어 층
US9202786B2 (en) * 2008-05-13 2015-12-01 Micron Technology, Inc. Low-resistance interconnects and methods of making same
US20110095427A1 (en) * 2008-05-13 2011-04-28 Micron Technology, Inc. Low-resistance interconnects and methods of making same
JP2010050359A (ja) * 2008-08-22 2010-03-04 Rohm Co Ltd 半導体装置の製造方法
JP2010073736A (ja) * 2008-09-16 2010-04-02 Rohm Co Ltd 半導体装置の製造方法
JP2010098196A (ja) * 2008-10-17 2010-04-30 Hitachi Cable Ltd 配線構造及び配線構造の製造方法
JP2010212497A (ja) * 2009-03-11 2010-09-24 Tokyo Electron Ltd 半導体装置の製造方法
JP2011003569A (ja) * 2009-06-16 2011-01-06 Tohoku Univ 成膜方法、前処理装置及び処理システム
KR101275679B1 (ko) * 2009-06-16 2013-06-17 도쿄엘렉트론가부시키가이샤 배리어층, 성막 방법 및 처리 시스템
US8653665B2 (en) 2009-06-16 2014-02-18 Tokyo Electron Limited Barrier layer, film forming method, and processing system
KR101399814B1 (ko) * 2009-06-16 2014-05-27 도쿄엘렉트론가부시키가이샤 성막 방법, 전처리 장치 및 처리 시스템
US8865590B2 (en) 2009-06-16 2014-10-21 Tokyo Electron Limited Film forming method, pretreatment device, and processing system
JP2011001568A (ja) * 2009-06-16 2011-01-06 Tokyo Electron Ltd バリヤ層、成膜方法及び処理システム
WO2010147141A1 (ja) * 2009-06-16 2010-12-23 東京エレクトロン株式会社 成膜方法、前処理装置及び処理システム
WO2010147140A1 (ja) * 2009-06-16 2010-12-23 東京エレクトロン株式会社 バリヤ層、成膜方法及び処理システム
KR101318506B1 (ko) 2009-07-14 2013-10-16 도쿄엘렉트론가부시키가이샤 성막 방법
US9293417B2 (en) 2009-07-14 2016-03-22 Tokyo Electron Limited Method for forming barrier film on wiring line
US9266146B2 (en) 2010-06-28 2016-02-23 Tokyo Electron Limited Film forming method and processing system
JP2012184449A (ja) * 2011-03-03 2012-09-27 Taiyo Nippon Sanso Corp 金属薄膜の製膜方法、金属薄膜、および金属薄膜の製膜装置

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