JP2007518274A5 - - Google Patents
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- Publication number
- JP2007518274A5 JP2007518274A5 JP2006549314A JP2006549314A JP2007518274A5 JP 2007518274 A5 JP2007518274 A5 JP 2007518274A5 JP 2006549314 A JP2006549314 A JP 2006549314A JP 2006549314 A JP2006549314 A JP 2006549314A JP 2007518274 A5 JP2007518274 A5 JP 2007518274A5
- Authority
- JP
- Japan
- Prior art keywords
- silicide
- forming
- nickel
- sidewall spacers
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 20
- 238000000034 method Methods 0.000 claims 19
- 229910021332 silicide Inorganic materials 0.000 claims 19
- 125000006850 spacer group Chemical group 0.000 claims 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 4
- 229910021334 nickel silicide Inorganic materials 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 229910045601 alloy Inorganic materials 0.000 claims 3
- 239000000956 alloy Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 239000011229 interlayer Substances 0.000 claims 3
- 239000010410 layer Substances 0.000 claims 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000001465 metallisation Methods 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/756,023 | 2004-01-12 | ||
| US10/756,023 US7005357B2 (en) | 2004-01-12 | 2004-01-12 | Low stress sidewall spacer in integrated circuit technology |
| PCT/US2004/043109 WO2005071729A1 (en) | 2004-01-12 | 2004-12-21 | Low stress sidewall spacer in integrated circuit technology |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007518274A JP2007518274A (ja) | 2007-07-05 |
| JP2007518274A5 true JP2007518274A5 (enExample) | 2008-02-14 |
| JP5265872B2 JP5265872B2 (ja) | 2013-08-14 |
Family
ID=34739734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006549314A Expired - Fee Related JP5265872B2 (ja) | 2004-01-12 | 2004-12-21 | 集積回路技術における低応力の側壁スペーサ |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7005357B2 (enExample) |
| JP (1) | JP5265872B2 (enExample) |
| KR (1) | KR20060123481A (enExample) |
| CN (1) | CN1902743A (enExample) |
| DE (1) | DE112004002638B4 (enExample) |
| GB (1) | GB2425405B (enExample) |
| TW (1) | TWI355733B (enExample) |
| WO (1) | WO2005071729A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7132352B1 (en) * | 2004-08-06 | 2006-11-07 | Advanced Micro Devices, Inc. | Method of eliminating source/drain junction spiking, and device produced thereby |
| EP1949416A2 (en) * | 2005-09-23 | 2008-07-30 | Nxp B.V. | A method of fabricating a structure for a semiconductor device |
| US7465635B2 (en) * | 2006-09-21 | 2008-12-16 | Texas Instruments Incorporated | Method for manufacturing a gate sidewall spacer using an energy beam treatment |
| US7741181B2 (en) * | 2007-11-06 | 2010-06-22 | International Business Machines Corporation | Methods of forming mixed gate CMOS with single poly deposition |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766406A (ja) * | 1993-08-25 | 1995-03-10 | Oki Electric Ind Co Ltd | サリサイド型ｍｏｓｆｅｔ及びその製造方法 |
| JPH07254574A (ja) * | 1994-03-16 | 1995-10-03 | Sony Corp | 電極形成方法 |
| JP2809113B2 (ja) * | 1994-09-29 | 1998-10-08 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH08186085A (ja) * | 1994-12-28 | 1996-07-16 | Nec Corp | 半導体装置の製造方法 |
| US5814545A (en) | 1995-10-02 | 1998-09-29 | Motorola, Inc. | Semiconductor device having a phosphorus doped PECVD film and a method of manufacture |
| JP3572561B2 (ja) * | 1996-10-11 | 2004-10-06 | 富士通株式会社 | 半導体装置の製造方法 |
| US5858846A (en) | 1997-08-04 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Salicide integration method |
| JP2000133802A (ja) * | 1998-10-28 | 2000-05-12 | Nec Corp | 半導体装置とその製造方法 |
| KR100313510B1 (ko) | 1999-04-02 | 2001-11-07 | 김영환 | 반도체 소자의 제조방법 |
| US6368988B1 (en) * | 1999-07-16 | 2002-04-09 | Micron Technology, Inc. | Combined gate cap or digit line and spacer deposition using HDP |
| US6040223A (en) * | 1999-08-13 | 2000-03-21 | Taiwan Semiconductor Manufacturing Company | Method for making improved polysilicon FET gate electrodes having composite sidewall spacers using a trapezoidal-shaped insulating layer for more reliable integrated circuits |
| KR100407684B1 (ko) * | 2000-06-28 | 2003-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| US6483154B1 (en) * | 2000-10-05 | 2002-11-19 | Advanced Micro Devices, Inc. | Nitrogen oxide plasma treatment for reduced nickel silicide bridging |
| US6495460B1 (en) | 2001-07-11 | 2002-12-17 | Advanced Micro Devices, Inc. | Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface |
| US6664172B2 (en) | 2002-01-22 | 2003-12-16 | United Microelectronics Corp. | Method of forming a MOS transistor with improved threshold voltage stability |
| US7005376B2 (en) * | 2003-07-07 | 2006-02-28 | Advanced Micro Devices, Inc. | Ultra-uniform silicides in integrated circuit technology |
-
2004
- 2004-01-12 US US10/756,023 patent/US7005357B2/en not_active Expired - Lifetime
- 2004-12-21 DE DE112004002638T patent/DE112004002638B4/de not_active Expired - Fee Related
- 2004-12-21 JP JP2006549314A patent/JP5265872B2/ja not_active Expired - Fee Related
- 2004-12-21 KR KR1020067013975A patent/KR20060123481A/ko not_active Ceased
- 2004-12-21 GB GB0615073A patent/GB2425405B/en not_active Expired - Fee Related
- 2004-12-21 CN CNA200480040305XA patent/CN1902743A/zh active Pending
- 2004-12-21 WO PCT/US2004/043109 patent/WO2005071729A1/en not_active Ceased
-
2005
- 2005-01-07 TW TW094100442A patent/TWI355733B/zh not_active IP Right Cessation
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