JP2007503016A - フォトツールのコーティング - Google Patents

フォトツールのコーティング Download PDF

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Publication number
JP2007503016A
JP2007503016A JP2006523840A JP2006523840A JP2007503016A JP 2007503016 A JP2007503016 A JP 2007503016A JP 2006523840 A JP2006523840 A JP 2006523840A JP 2006523840 A JP2006523840 A JP 2006523840A JP 2007503016 A JP2007503016 A JP 2007503016A
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JP
Japan
Prior art keywords
phosphonate
phototool
layer
phosphate
fluorinated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006523840A
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English (en)
Japanese (ja)
Other versions
JP2007503016A5 (cg-RX-API-DMAC7.html
Inventor
デイビッド・ディ・ル
マーク・ジェイ・ペレライト
リチャード・エム・フリン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2007503016A publication Critical patent/JP2007503016A/ja
Publication of JP2007503016A5 publication Critical patent/JP2007503016A5/ja
Withdrawn legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76Patterning of masks by imaging
    • G03F1/78Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48Protective coatings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Plasma & Fusion (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
JP2006523840A 2003-08-21 2004-06-30 フォトツールのコーティング Withdrawn JP2007503016A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/645,020 US7189479B2 (en) 2003-08-21 2003-08-21 Phototool coating
PCT/US2004/021017 WO2005024520A2 (en) 2003-08-21 2004-06-30 Phototool coating

Publications (2)

Publication Number Publication Date
JP2007503016A true JP2007503016A (ja) 2007-02-15
JP2007503016A5 JP2007503016A5 (cg-RX-API-DMAC7.html) 2007-08-16

Family

ID=34194211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006523840A Withdrawn JP2007503016A (ja) 2003-08-21 2004-06-30 フォトツールのコーティング

Country Status (6)

Country Link
US (2) US7189479B2 (cg-RX-API-DMAC7.html)
EP (1) EP1656588A2 (cg-RX-API-DMAC7.html)
JP (1) JP2007503016A (cg-RX-API-DMAC7.html)
KR (1) KR20060080182A (cg-RX-API-DMAC7.html)
CN (1) CN1839351A (cg-RX-API-DMAC7.html)
WO (1) WO2005024520A2 (cg-RX-API-DMAC7.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007502814A (ja) * 2003-08-21 2007-02-15 スリーエム イノベイティブ プロパティズ カンパニー パーフルオロポリエーテルアミド連結ホスホネート、ホスフェートおよびそれらの誘導体
JP2011133750A (ja) * 2009-12-25 2011-07-07 Fujitsu Ltd 保護膜付きレジストパターン形成用部材とその製造方法、及びレジストパターンの製造方法
JP2018511816A (ja) * 2015-04-03 2018-04-26 モックステック・インコーポレーテッド ワイヤグリッドポラライザ用の酸化バリア層および吸湿バリア層
JP2018535446A (ja) * 2016-01-27 2018-11-29 エルジー・ケム・リミテッド フィルムマスク、その製造方法およびこれを用いたパターンの形成方法
JP7365086B1 (ja) 2023-04-04 2023-10-19 株式会社ハーベス パーフルオロポリエーテル基含有ホスホネート化合物、表面処理剤、及び該表面処理剤で処理された物品

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CN101010632A (zh) * 2004-05-28 2007-08-01 奥布杜卡特公司 用于压印工艺中的改性金属模
EP1998833B1 (en) * 2006-03-24 2012-12-26 3M Innovative Properties Company Medicinal formulation container with a treated metal surface
US8337959B2 (en) * 2006-11-28 2012-12-25 Nanonex Corporation Method and apparatus to apply surface release coating for imprint mold
US20090114618A1 (en) * 2007-06-21 2009-05-07 3M Innovative Properties Company Method of making hierarchical articles
US20080315459A1 (en) * 2007-06-21 2008-12-25 3M Innovative Properties Company Articles and methods for replication of microstructures and nanofeatures
US20090041986A1 (en) * 2007-06-21 2009-02-12 3M Innovative Properties Company Method of making hierarchical articles
CN101952047A (zh) * 2007-12-31 2011-01-19 3M创新有限公司 施用可涂覆型材料的方法
EP2269116A4 (en) * 2008-03-11 2011-09-07 3M Innovative Properties Co PHOTOGRAPHIC MASKS HAVING PROTECTIVE LAYER
CN102015122A (zh) * 2008-03-26 2011-04-13 3M创新有限公司 坡流涂布两种或更多种流体的方法
JP5491492B2 (ja) * 2008-03-26 2014-05-14 スリーエム イノベイティブ プロパティズ カンパニー 複数ユニットポリマー前駆体を含有するスライド塗布液の方法
JP5519629B2 (ja) * 2008-03-26 2014-06-11 スリーエム イノベイティブ プロパティズ カンパニー 2種以上の流体をスライド塗布する方法
WO2010080353A2 (en) * 2008-12-18 2010-07-15 3M Innovative Properties Company Method of contacting hydrocarbon-bearing formations with fluorinated phosphate and phosphonate compositions
US9096712B2 (en) 2009-07-21 2015-08-04 3M Innovative Properties Company Curable compositions, method of coating a phototool, and coated phototool
KR101768237B1 (ko) 2009-09-16 2017-08-14 쓰리엠 이노베이티브 프로퍼티즈 컴파니 플루오르화된 코팅 및 그로 제조된 포토툴
CN102686642B (zh) 2009-09-16 2016-06-29 3M创新有限公司 氟化涂料和用其制作的底片
US8420281B2 (en) 2009-09-16 2013-04-16 3M Innovative Properties Company Epoxy-functionalized perfluoropolyether polyurethanes
US8747092B2 (en) 2010-01-22 2014-06-10 Nanonex Corporation Fast nanoimprinting apparatus using deformale mold
US10108086B2 (en) 2013-03-15 2018-10-23 Nanonex Corporation System and methods of mold/substrate separation for imprint lithography
US10105883B2 (en) 2013-03-15 2018-10-23 Nanonex Corporation Imprint lithography system and method for manufacturing
US10534120B2 (en) 2015-04-03 2020-01-14 Moxtek, Inc. Wire grid polarizer with protected wires
US9995864B2 (en) 2015-04-03 2018-06-12 Moxtek, Inc. Wire grid polarizer with silane protective coating
US20160289458A1 (en) * 2015-04-03 2016-10-06 Moxtek, Inc. Hydrophobic Phosphonate and Silane Chemistry
EP3410214B1 (en) * 2016-01-27 2025-07-30 LG Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
KR102126110B1 (ko) 2016-01-27 2020-06-24 주식회사 엘지화학 필름 마스크, 이의 제조방법, 이를 이용한 패턴 형성 방법 및 이를 이용하여 형성된 패턴
CN114326304B (zh) * 2021-12-30 2024-08-20 苏州瑞红电子化学品有限公司 一种耐刻蚀的正性光刻胶

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US6762013B2 (en) * 2002-10-04 2004-07-13 Eastman Kodak Company Thermally developable materials containing fluorochemical conductive layers
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007502814A (ja) * 2003-08-21 2007-02-15 スリーエム イノベイティブ プロパティズ カンパニー パーフルオロポリエーテルアミド連結ホスホネート、ホスフェートおよびそれらの誘導体
JP2011133750A (ja) * 2009-12-25 2011-07-07 Fujitsu Ltd 保護膜付きレジストパターン形成用部材とその製造方法、及びレジストパターンの製造方法
JP2018511816A (ja) * 2015-04-03 2018-04-26 モックステック・インコーポレーテッド ワイヤグリッドポラライザ用の酸化バリア層および吸湿バリア層
JP2020122991A (ja) * 2015-04-03 2020-08-13 モックステック・インコーポレーテッド ワイヤグリッドポラライザ
JP7059497B2 (ja) 2015-04-03 2022-04-26 モックステック・インコーポレーテッド ワイヤグリッドポラライザ用の酸化バリア層および吸湿バリア層
JP7088497B2 (ja) 2015-04-03 2022-06-21 モックステック・インコーポレーテッド ワイヤグリッドポラライザ
JP2018535446A (ja) * 2016-01-27 2018-11-29 エルジー・ケム・リミテッド フィルムマスク、その製造方法およびこれを用いたパターンの形成方法
JP7365086B1 (ja) 2023-04-04 2023-10-19 株式会社ハーベス パーフルオロポリエーテル基含有ホスホネート化合物、表面処理剤、及び該表面処理剤で処理された物品
WO2024210085A1 (ja) * 2023-04-04 2024-10-10 株式会社ハーベス パーフルオロポリエーテル基含有ホスホネート化合物、表面処理剤、及び該表面処理剤で処理された物品
JP2024147937A (ja) * 2023-04-04 2024-10-17 株式会社ハーベス パーフルオロポリエーテル基含有ホスホネート化合物、表面処理剤、及び該表面処理剤で処理された物品

Also Published As

Publication number Publication date
WO2005024520A3 (en) 2005-09-09
CN1839351A (zh) 2006-09-27
US20050042553A1 (en) 2005-02-24
US7189479B2 (en) 2007-03-13
EP1656588A2 (en) 2006-05-17
WO2005024520A2 (en) 2005-03-17
KR20060080182A (ko) 2006-07-07
US20070128557A1 (en) 2007-06-07

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