JP2007300120A - 窒化物膜の製造方法及び窒化物構造物 - Google Patents
窒化物膜の製造方法及び窒化物構造物 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 239000002184 metal Substances 0.000 claims abstract description 84
- 239000012535 impurity Substances 0.000 claims abstract description 75
- 238000006243 chemical reaction Methods 0.000 claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000007789 gas Substances 0.000 claims abstract description 24
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 21
- 229910001510 metal chloride Inorganic materials 0.000 claims abstract description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 11
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000012159 carrier gas Substances 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- 229910021476 group 6 element Inorganic materials 0.000 claims description 11
- 229910021480 group 4 element Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910018229 Al—Ga Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 2
- 239000010408 film Substances 0.000 description 40
- 230000008569 process Effects 0.000 description 21
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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Abstract
【解決手段】ハイドライド気相エピタキシャル法(HVPE)を利用した窒化物膜の製造方法において、ガス供給方向から順次位置した外側反応室と内側反応室に不純物が含有された少なくとも1つのIII族金属ソースと基板を順次配置し、前記各反応室を成長温度に加熱するステップと、前記外側反応室に塩化水素ガスとキャリアガスを供給することによって、金属塩化物が形成されるように前記III族金属ソースと反応させ、前記金属塩化物を前記基板に搬送させるステップと、前記搬送させた金属塩化物を前記内側反応室に供給される窒素ソースガスと反応させることによって、前記基板上に前記不純物がドープされた窒化物膜を形成するステップと、を含む窒化物膜の製造方法を提供する。
【選択図】 図2
Description
本実施例の合金ソースは、Ga金属にAlとTeを溶融させた後に、900℃の温度で飽和させることによって、所望のTeが少量含有されたAlとGaの合金ソースを用意した。本実施例で用いられた合金ソースは、AlとGaの割合をAl組成比が16%を有するように維持する条件でTeの原子分率(g/mol)を0.003、0.008、0.012、0.016、0.018、0.035、0.043に異にして、7個製造された。
31a 外側反応室
31b 内側反応室
32 加熱装置
33 不純物含有III族金属ソース
34 基板
35a 第1供給線路
35b 第2供給線路
Claims (19)
- ハイドライド気相エピタキシャル法(HVPE)を利用した窒化物膜の製造方法において、
ガス供給方向から順次位置した外側反応室と内側反応室に不純物が含有された少なくとも1つのIII族金属ソースと基板を順次配置し、前記各反応室を成長温度に加熱するステップと、
前記外側反応室に塩化水素ガスとキャリアガスを供給することによって、金属塩化物が形成されるように前記III族金属ソースと反応させ、前記金属塩化物を前記基板に搬送させるステップと、
前記搬送させた金属塩化物を前記内側反応室に供給される窒素ソースガスと反応させることによって、前記基板上に前記不純物がドープされた窒化物膜を形成するステップと、
を含む窒化物膜の製造方法。 - 前記少なくとも1つのIII族金属ソースは、前記不純物が含有されたIII族単一金属ソースであることを特徴とする請求項1に記載の窒化物膜の製造方法。
- 前記少なくとも1つのIII族金属ソースは、Teが含有されたGaソースであり、前記窒化物膜は、Teがドープされたn型GaNであることを特徴とする請求項2に記載の窒化物膜の製造方法。
- 前記少なくとも1つのIII族金属ソースは、前記III族単一金属ソースと異なる少なくとも1種のIII族金属からなる他の金属ソースをさらに含むことを特徴とする請求項2又は3に記載の窒化物膜の製造方法。
- 前記他の金属ソースは、Al及びInのうち、少なくとも1つの金属又は合金ソースであることを特徴とする請求項4に記載の窒化物膜の製造方法。
- 前記III族金属ソースは、前記不純物金属が含有され、複数種のIII族金属からなる合金ソースであることを特徴とする請求項1に記載の窒化物膜の製造方法。
- 前記少なくとも1つのIII族金属ソースは、Teが含有されたAl−Ga合金ソースであり、前記窒化物膜は、Teがドープされたn型AlGaNであることを特徴とする請求項6に記載の窒化物膜の製造方法。
- 前記少なくとも1つのIII族金属ソースは、前記合金ソースを構成する元素と異なる少なくとも1種のIII族金属からなる他の金属ソースをさらに含むことを特徴とする請求項6又は7に記載の窒化物膜の製造方法。
- 前記他の金属ソースは、In金属ソースであることを特徴とする請求項8に記載の窒化物膜の製造方法。
- 前記不純物は、n型不純物のためのVI族元素であり、前記窒化物膜は、n型窒化物膜であることを特徴とする請求項1、2または6のうちの何れか1項に記載の窒化物膜の製造方法。
- 前記不純物は、Se及びTeのうち、少なくとも1つの金属であることを特徴とする請求項10に記載の窒化物膜の製造方法。
- 前記不純物は、n型不純物のためのIV族元素であり、前記窒化物膜は、n型窒化物膜であることを特徴とする請求項1、2または6のうちの何れか1項に記載の窒化物膜の製造方法。
- 前記不純物は、Si、Ge、Sn及びPbで構成されたグループから選択された少なくとも1種の金属であることを特徴とする請求項12に記載の窒化物膜の製造方法。
- 特定導電型を有する不純物の濃度が厚さ方向に均一な1016〜1020/cm3であり、5μm以上の厚さを有するIII族窒化物からなる窒化物構造物。
- 前記III族窒化物膜は、50μm以上の厚さを有する請求項14に記載の窒化物構造物。
- 前記不純物は、Teであり、前記III族窒化物膜は、n型窒化物であることを特徴とする請求項15に記載の窒化物構造物。
- 前記III族窒化物膜は、4×102(Ωcm)-1以上の電気伝導度を有することを特徴とする請求項16に記載の窒化物構造物。
- 前記不純物は、Teであり、前記Te不純物の濃度は、2×1018〜1020/cm3であることを特徴とする請求項17に記載の窒化物構造物。
- 前記III族窒化物膜は、Al1-x-yGaxInyN(0≦x≦1、0≦y≦1)であることを特徴とする請求項14に記載の窒化物構造物。
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JP2016115794A (ja) * | 2014-12-15 | 2016-06-23 | 日亜化学工業株式会社 | 窒化物半導体テンプレートの製造方法 |
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US8846482B2 (en) | 2011-09-22 | 2014-09-30 | Avogy, Inc. | Method and system for diffusion and implantation in gallium nitride based devices |
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JP2016115794A (ja) * | 2014-12-15 | 2016-06-23 | 日亜化学工業株式会社 | 窒化物半導体テンプレートの製造方法 |
Also Published As
Publication number | Publication date |
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US7943492B2 (en) | 2011-05-17 |
KR20070105719A (ko) | 2007-10-31 |
KR100809243B1 (ko) | 2008-02-29 |
JP4699420B2 (ja) | 2011-06-08 |
US20070254445A1 (en) | 2007-11-01 |
US20110189457A1 (en) | 2011-08-04 |
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