JP2007273659A5 - - Google Patents

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Publication number
JP2007273659A5
JP2007273659A5 JP2006096340A JP2006096340A JP2007273659A5 JP 2007273659 A5 JP2007273659 A5 JP 2007273659A5 JP 2006096340 A JP2006096340 A JP 2006096340A JP 2006096340 A JP2006096340 A JP 2006096340A JP 2007273659 A5 JP2007273659 A5 JP 2007273659A5
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JP
Japan
Prior art keywords
gan
based semiconductor
semiconductor light
manufacturing
emitting device
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JP2006096340A
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English (en)
Japanese (ja)
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JP4637781B2 (ja
JP2007273659A (ja
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Priority claimed from JP2006096340A external-priority patent/JP4637781B2/ja
Priority to JP2006096340A priority Critical patent/JP4637781B2/ja
Priority to PCT/JP2007/057159 priority patent/WO2007119619A1/ja
Priority to KR1020087024514A priority patent/KR101062544B1/ko
Priority to CNA2007800104899A priority patent/CN101410992A/zh
Priority to TW096111372A priority patent/TWI377698B/zh
Priority to US12/295,206 priority patent/US7968361B2/en
Priority to EP07740595.9A priority patent/EP2006921B1/en
Publication of JP2007273659A publication Critical patent/JP2007273659A/ja
Publication of JP2007273659A5 publication Critical patent/JP2007273659A5/ja
Publication of JP4637781B2 publication Critical patent/JP4637781B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2006096340A 2006-03-31 2006-03-31 ＧａＮ系半導体発光素子の製造方法 Expired - Lifetime JP4637781B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006096340A JP4637781B2 (ja) 2006-03-31 2006-03-31 ＧａＮ系半導体発光素子の製造方法
TW096111372A TWI377698B (en) 2006-03-31 2007-03-30 Gan type semiconductor light emitting element and lamp
KR1020087024514A KR101062544B1 (ko) 2006-03-31 2007-03-30 ＧａＮ계 반도체 발광 소자의 제조 방법 및 램프
CNA2007800104899A CN101410992A (zh) 2006-03-31 2007-03-30 GaN系半导体发光元件和灯
PCT/JP2007/057159 WO2007119619A1 (ja) 2006-03-31 2007-03-30 ＧａＮ系半導体発光素子およびランプ
US12/295,206 US7968361B2 (en) 2006-03-31 2007-03-30 GaN based semiconductor light emitting device and lamp
EP07740595.9A EP2006921B1 (en) 2006-03-31 2007-03-30 Method for producing a GaN based light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006096340A JP4637781B2 (ja) 2006-03-31 2006-03-31 ＧａＮ系半導体発光素子の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010141904A Division JP2010206230A (ja) 2010-06-22 2010-06-22 ＧａＮ系半導体発光素子の製造方法およびランプ

Publications (3)

Publication Number Publication Date
JP2007273659A JP2007273659A (ja) 2007-10-18
JP2007273659A5 true JP2007273659A5 (https=) 2010-05-20
JP4637781B2 JP4637781B2 (ja) 2011-02-23

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JP2006096340A Expired - Lifetime JP4637781B2 (ja) 2006-03-31 2006-03-31 ＧａＮ系半導体発光素子の製造方法

Country Status (7)

Country Link
US (1) US7968361B2 (https=)
EP (1) EP2006921B1 (https=)
JP (1) JP4637781B2 (https=)
KR (1) KR101062544B1 (https=)
CN (1) CN101410992A (https=)
TW (1) TWI377698B (https=)
WO (1) WO2007119619A1 (https=)

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