JP2007273659A5 - - Google Patents

Download PDF

Info

Publication number
JP2007273659A5
JP2007273659A5 JP2006096340A JP2006096340A JP2007273659A5 JP 2007273659 A5 JP2007273659 A5 JP 2007273659A5 JP 2006096340 A JP2006096340 A JP 2006096340A JP 2006096340 A JP2006096340 A JP 2006096340A JP 2007273659 A5 JP2007273659 A5 JP 2007273659A5
Authority
JP
Japan
Prior art keywords
gan
based semiconductor
semiconductor light
manufacturing
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006096340A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007273659A (ja
JP4637781B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2006096340A external-priority patent/JP4637781B2/ja
Priority to JP2006096340A priority Critical patent/JP4637781B2/ja
Priority to KR1020087024514A priority patent/KR101062544B1/ko
Priority to CNA2007800104899A priority patent/CN101410992A/zh
Priority to EP07740595.9A priority patent/EP2006921B1/en
Priority to PCT/JP2007/057159 priority patent/WO2007119619A1/ja
Priority to US12/295,206 priority patent/US7968361B2/en
Priority to TW096111372A priority patent/TWI377698B/zh
Publication of JP2007273659A publication Critical patent/JP2007273659A/ja
Publication of JP2007273659A5 publication Critical patent/JP2007273659A5/ja
Publication of JP4637781B2 publication Critical patent/JP4637781B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006096340A 2006-03-31 2006-03-31 ＧａＮ系半導体発光素子の製造方法 Active JP4637781B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006096340A JP4637781B2 (ja) 2006-03-31 2006-03-31 ＧａＮ系半導体発光素子の製造方法
PCT/JP2007/057159 WO2007119619A1 (ja) 2006-03-31 2007-03-30 ＧａＮ系半導体発光素子およびランプ
CNA2007800104899A CN101410992A (zh) 2006-03-31 2007-03-30 GaN系半导体发光元件和灯
EP07740595.9A EP2006921B1 (en) 2006-03-31 2007-03-30 Method for producing a GaN based light emitting diode
KR1020087024514A KR101062544B1 (ko) 2006-03-31 2007-03-30 ＧａＮ계 반도체 발광 소자의 제조 방법 및 램프
US12/295,206 US7968361B2 (en) 2006-03-31 2007-03-30 GaN based semiconductor light emitting device and lamp
TW096111372A TWI377698B (en) 2006-03-31 2007-03-30 Gan type semiconductor light emitting element and lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006096340A JP4637781B2 (ja) 2006-03-31 2006-03-31 ＧａＮ系半導体発光素子の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010141904A Division JP2010206230A (ja) 2010-06-22 2010-06-22 ＧａＮ系半導体発光素子の製造方法およびランプ

Publications (3)

Publication Number Publication Date
JP2007273659A JP2007273659A (ja) 2007-10-18
JP2007273659A5 true JP2007273659A5 (enExample) 2010-05-20
JP4637781B2 JP4637781B2 (ja) 2011-02-23

Family

ID=38609386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006096340A Active JP4637781B2 (ja) 2006-03-31 2006-03-31 ＧａＮ系半導体発光素子の製造方法

Country Status (7)

Country Link
US (1) US7968361B2 (enExample)
EP (1) EP2006921B1 (enExample)
JP (1) JP4637781B2 (enExample)
KR (1) KR101062544B1 (enExample)
CN (1) CN101410992A (enExample)
TW (1) TWI377698B (enExample)
WO (1) WO2007119619A1 (enExample)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5082752B2 (ja) * 2006-12-21 2012-11-28 日亜化学工業株式会社 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子
KR20100108351A (ko) * 2007-11-27 2010-10-06 가꼬호징 조찌가꾸잉 Ｉｉｉ족 질화물 구조체 및 ｉｉｉ족 질화물 구조체의 제조방법
EP2280427B1 (en) * 2008-04-25 2013-08-21 LG Innotek Co., Ltd Light emitting diode
JP2009283620A (ja) * 2008-05-21 2009-12-03 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
TWI413279B (zh) * 2008-06-20 2013-10-21 Toyoda Gosei Kk Iii族氮化物半導體發光元件及其製造方法、以及燈
JP5056618B2 (ja) * 2008-06-26 2012-10-24 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
US8633501B2 (en) 2008-08-12 2014-01-21 Epistar Corporation Light-emitting device having a patterned surface
JP5379434B2 (ja) * 2008-09-22 2013-12-25 学校法人 名城大学 発光素子用サファイア基板の製造方法
JP2010161354A (ja) * 2008-12-08 2010-07-22 Showa Denko Kk 半導体発光素子用テンプレート基板、半導体発光素子用テンプレート基板の製造方法、半導体発光素子の製造方法及び半導体発光素子
TWI394873B (zh) * 2009-04-27 2013-05-01 Aurotek Corp 具有週期結構之藍寶石基板之製造方法
TWI414646B (zh) * 2009-04-27 2013-11-11 Aurotek Corp 用於太陽能電池之具有週期結構之矽基板之製造方法
US8536776B2 (en) 2009-05-07 2013-09-17 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
JP5036907B2 (ja) * 2009-08-24 2012-09-26 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子
KR101118268B1 (ko) 2009-08-27 2012-03-20 한국산업기술대학교산학협력단 요철 패턴 기판 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
KR20140082852A (ko) * 2009-09-07 2014-07-02 엘시드 가부시끼가이샤 반도체 발광 소자
WO2011050179A2 (en) * 2009-10-23 2011-04-28 The Board Of Trustees Of The Leland Stanford Junior University Optoelectronic semiconductor device and method of fabrication
CN102054911B (zh) * 2009-10-29 2013-03-13 比亚迪股份有限公司 发光二极管芯片及其制作方法和具有该芯片的发光二极管
US8476658B2 (en) * 2009-11-25 2013-07-02 Jing Jie Dai Semiconductor light-emitting devices
CN102074620B (zh) * 2009-11-25 2012-07-25 广镓光电股份有限公司 半导体发光元件
US8071401B2 (en) * 2009-12-10 2011-12-06 Walsin Lihwa Corporation Method of forming vertical structure light emitting diode with heat exhaustion structure
TWI455377B (zh) * 2010-04-23 2014-10-01 Everlight Electronics Co Ltd 發光二極體結構及其製作方法
TWI562195B (en) * 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
CN102255020B (zh) * 2010-08-02 2013-04-17 中山大学佛山研究院 一种垂直结构氮化镓发光二极管的外延片及其制造方法
TWI466287B (zh) * 2010-11-22 2014-12-21 Nat Univ Chung Hsing Substrate for epitaxy and its manufacturing method
US8409895B2 (en) * 2010-12-16 2013-04-02 Applied Materials, Inc. Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer
KR101277365B1 (ko) * 2011-02-07 2013-06-20 한국산업기술대학교산학협력단 ｍ-면 사파이어 기판에 질화물계 박막을 형성하는 방법 및 이에 의해 제조된 질화물계 반도체
JP5232338B2 (ja) * 2011-04-08 2013-07-10 パナソニック株式会社 窒化物系半導体素子およびその製造方法
KR101262725B1 (ko) * 2011-08-08 2013-05-09 일진엘이디(주) 누설전류 차단 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법
TWI514614B (zh) * 2011-08-30 2015-12-21 Lextar Electronics Corp 固態發光半導體結構及其磊晶層成長方法
JP2013101992A (ja) * 2011-11-07 2013-05-23 Ulvac Japan Ltd プラズマエッチング装置
JP5673581B2 (ja) 2012-02-24 2015-02-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体発光素子、ランプ、並びに、レチクル
CN103305909B (zh) * 2012-03-14 2016-01-20 东莞市中镓半导体科技有限公司 一种用于GaN生长的复合衬底的制备方法
CN103305908A (zh) * 2012-03-14 2013-09-18 东莞市中镓半导体科技有限公司 一种用于GaN生长的复合衬底
JP6024533B2 (ja) 2012-03-28 2016-11-16 日亜化学工業株式会社 サファイア基板及びその製造方法並びに窒化物半導体発光素子
KR101233062B1 (ko) 2012-04-18 2013-02-19 (주)휴넷플러스 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법
KR101233063B1 (ko) * 2012-04-19 2013-02-19 (주)휴넷플러스 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법
US9209356B2 (en) * 2012-06-08 2015-12-08 Epistar Corporation Light-emitting element including a light-emitting stack with an uneven upper surface
US9257579B2 (en) * 2012-07-30 2016-02-09 Electronics And Telecommunications Research Institute Electronic devices and method of fabricating the same
US9214336B2 (en) 2012-09-27 2015-12-15 Toyoda Gosei Co., Ltd. Method for producing a group III nitride semiconductor
KR20140098564A (ko) 2013-01-31 2014-08-08 삼성전자주식회사 반도체 발광소자
KR20140104756A (ko) 2013-02-21 2014-08-29 삼성전자주식회사 질화물 반도체 발광소자 및 그 제조방법
US9929310B2 (en) * 2013-03-14 2018-03-27 Applied Materials, Inc. Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices
HK1214407A1 (zh) * 2013-04-16 2016-07-22 崇高种子公司 Led元件及其制造方法
CN103280503B (zh) * 2013-05-23 2017-02-08 台州市一能科技有限公司 半导体器件
JP5957771B2 (ja) * 2013-10-11 2016-07-27 パナソニックＩｐマネジメント株式会社 窒化物半導体積層構造、半導体発光素子および窒化物半導体積層構造を製造する方法
JP6248786B2 (ja) * 2014-04-25 2017-12-20 日亜化学工業株式会社 窒化物半導体素子およびその製造方法
CN105449058A (zh) * 2014-09-02 2016-03-30 展晶科技(深圳)有限公司 磊晶基板、磊晶基板的制造方法及发光二极管
CN105355739A (zh) * 2015-10-23 2016-02-24 安徽三安光电有限公司 图形化衬底、制备方法及发光二极管
CN106653970B (zh) * 2016-11-18 2019-08-23 华灿光电（浙江）有限公司 一种发光二极管的外延片及其生长方法
FR3059147B1 (fr) * 2016-11-18 2019-01-25 Centre National De La Recherche Scientifique Heterostructures semi-conductrices avec structure de type wurtzite sur substrat en zno
CN109841708B (zh) * 2017-11-28 2022-05-31 中国科学院半导体研究所 半导体器件及其制备方法
US11961875B2 (en) 2017-12-20 2024-04-16 Lumileds Llc Monolithic segmented LED array architecture with islanded epitaxial growth
US11257983B2 (en) 2018-04-11 2022-02-22 Nanosys, Inc. Light emitting diodes formed on nanodisk substrates and methods of making the same
MY189641A (en) * 2018-11-30 2022-02-22 Univ Malaya A method of depositing gallium nitride on a substrate
US11942507B2 (en) 2020-03-11 2024-03-26 Lumileds Llc Light emitting diode devices
US11848402B2 (en) 2020-03-11 2023-12-19 Lumileds Llc Light emitting diode devices with multilayer composite film including current spreading layer
US11569415B2 (en) 2020-03-11 2023-01-31 Lumileds Llc Light emitting diode devices with defined hard mask opening
US11735695B2 (en) 2020-03-11 2023-08-22 Lumileds Llc Light emitting diode devices with current spreading layer
US11626538B2 (en) 2020-10-29 2023-04-11 Lumileds Llc Light emitting diode device with tunable emission
US11901491B2 (en) 2020-10-29 2024-02-13 Lumileds Llc Light emitting diode devices
US12040432B2 (en) 2020-10-30 2024-07-16 Lumileds Llc Light emitting diode devices with patterned TCO layer including different thicknesses
CN116438665B (zh) * 2020-11-11 2025-04-25 苏州晶湛半导体有限公司 LED结构及其GaN基衬底、GaN基衬底的制作方法
US11705534B2 (en) 2020-12-01 2023-07-18 Lumileds Llc Methods of making flip chip micro light emitting diodes
US11955583B2 (en) 2020-12-01 2024-04-09 Lumileds Llc Flip chip micro light emitting diodes
US11600656B2 (en) 2020-12-14 2023-03-07 Lumileds Llc Light emitting diode device
US12402440B2 (en) 2021-09-03 2025-08-26 Lumileds Llc Light emitting diode devices with bonding and/or ohmic contact-reflective material
US12484346B2 (en) 2021-09-03 2025-11-25 Lumileds Singapore Pte. Ltd. Light emitting diode devices with bonding and/or ohmic contact-reflective material
US12419137B2 (en) 2021-09-10 2025-09-16 Lumileds Llc Light emitting diodes with segmented anodes by pixel
US12431478B2 (en) 2021-09-29 2025-09-30 Lumileds Singapore Pte. Ltd. Hybrid CMOS micro-LED display layout
US12433080B2 (en) 2021-09-29 2025-09-30 Lumileds Singapore Pte. Ltd. Hybrid CMOS micro-LED display layout
US11935987B2 (en) 2021-11-03 2024-03-19 Lumileds Llc Light emitting diode arrays with a light-emitting pixel area
US12490570B2 (en) 2021-11-12 2025-12-02 Lumileds Singapore Pte. Ltd. Thin-film LED array with low refractive index patterned structures
JP7575011B2 (ja) * 2022-08-25 2024-10-29 シャープ株式会社 Ｌｅｄアレイ
KR102767515B1 (ko) 2022-12-22 2025-02-12 중앙대학교 산학협력단 적외선 영역대 펄스 co2 레이저를 이용한 고품질 질화갈륨 박막 제조 방법 및 장치
CN118693202B (zh) * 2024-08-26 2024-11-15 南通东升灯饰有限公司 一种led发光器件

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042890A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 面発光形半導体レ−ザ及びその製造方法
JPS60173829A (ja) 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
US4870468A (en) * 1986-09-12 1989-09-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method of manufacturing the same
JP2836687B2 (ja) 1993-04-03 1998-12-14 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP3304787B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
TW340296B (en) * 1997-02-21 1998-09-11 Ricoh Microelectronics Kk Method and apparatus of concave plate printing, method and apparatus for formation of wiring diagram, the contact electrode and the printed wiring nickel substrate
US6091083A (en) * 1997-06-02 2000-07-18 Sharp Kabushiki Kaisha Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface
JP3436128B2 (ja) 1998-04-28 2003-08-11 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体素子
US6304329B1 (en) * 1998-10-19 2001-10-16 Canon Kabushiki Kaisha Gyro and semiconductor device having a plurality of laser diodes
JP4214342B2 (ja) * 1999-10-13 2009-01-28 信越化学工業株式会社 マグネトロンスパッタリング装置
JP2001267242A (ja) * 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP3994623B2 (ja) 2000-04-21 2007-10-24 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2002008985A (ja) * 2000-06-21 2002-01-11 Nichia Chem Ind Ltd 窒化物半導体の製造方法及び窒化物半導体基板
CN1284250C (zh) * 2001-03-21 2006-11-08 三菱电线工业株式会社 半导体发光元件
JP4517329B2 (ja) * 2001-07-31 2010-08-04 富士電機デバイステクノロジー株式会社 垂直磁気記録媒体
KR20040043046A (ko) * 2002-11-15 2004-05-22 삼성전자주식회사 마그네트론 스퍼터링 장치 및 스퍼터링 방법
US7042150B2 (en) * 2002-12-20 2006-05-09 Showa Denko K.K. Light-emitting device, method of fabricating the device, and LED lamp using the device
JP2004273122A (ja) * 2003-03-04 2004-09-30 Abel Systems Inc 面発光装置
JP4437290B2 (ja) 2003-05-14 2010-03-24 シーワイジー技術研究所株式会社 スパッタ装置
JP2005064492A (ja) 2003-07-28 2005-03-10 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子
WO2005018008A1 (ja) 2003-08-19 2005-02-24 Nichia Corporation 半導体素子
US7723740B2 (en) * 2003-09-18 2010-05-25 Nichia Corporation Light emitting device
KR100714639B1 (ko) 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자
KR100568297B1 (ko) * 2004-03-30 2006-04-05 삼성전기주식회사 질화물 반도체 발광 소자 및 그 제조 방법
JP4471726B2 (ja) * 2004-04-26 2010-06-02 京セラ株式会社 単結晶サファイア基板の製造方法
JP2006002244A (ja) * 2004-06-21 2006-01-05 Victor Co Of Japan Ltd マグネトロンスパッタリング装置
JP2005336520A (ja) * 2004-05-25 2005-12-08 Victor Co Of Japan Ltd マグネトロンスパッタリング装置
US20050274610A1 (en) 2004-05-25 2005-12-15 Victor Company Of Japan, Limited Magnetron sputtering apparatus
JP2005347700A (ja) * 2004-06-07 2005-12-15 Toyoda Gosei Co Ltd 発光素子およびその製造方法
US7560294B2 (en) * 2004-06-07 2009-07-14 Toyoda Gosei Co., Ltd. Light emitting element and method of making same
JP4513446B2 (ja) * 2004-07-23 2010-07-28 豊田合成株式会社 半導体結晶の結晶成長方法
GB2418400A (en) 2004-09-28 2006-03-29 Armon Ltd Folding baby stroller
US7690829B2 (en) * 2005-03-29 2010-04-06 Konica Minolta Holdings, Inc. Surface light emitter and display apparatus

Similar Documents

Publication Publication Date Title
JP2007273659A5 (enExample)
US7732802B2 (en) Semiconductor light emitting device
JP2006041479A5 (enExample)
JP2009543372A5 (enExample)
US20120009768A1 (en) Method for forming sapphire substrate and semiconductor device
JP2016001738A5 (enExample)
JP2010021513A (ja) パターン形成基板を具備した窒化物半導体発光素子及びその製造方法
JP2008016847A (ja) 窒化物半導体発光素子アレイ
CN105190915A (zh) 一种用于ⅲ-ⅴ族氮化物生长的衬底及其制备方法
CN105742440A (zh) 图案化衬底及光电半导体元件
JP2018531517A5 (enExample)
RU2012108959A (ru) Светодиод высокой яркости с шероховатым активным слоем и соответствующим по форме покрытием
WO2011025291A3 (ko) 요철 패턴 기판 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
TWI531082B (zh) 發光二極體及其製造方法
JP2009105088A (ja) 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
CN102130230A (zh) 发光二极管的制备方法
JP2012080104A5 (enExample)
CN103187495B (zh) 发光二极管芯片及其制造方法
CN101593801A (zh) 倒装发光二极管的制备方法
JP2007261936A5 (enExample)
RU2012105987A (ru) Отражающий контакт для полупроводникового светоизлучающего устройства
CN217405451U (zh) 复合图形化衬底和具有空气隙的外延结构
TWI479686B (zh) 發光二極體
CN204760414U (zh) 一种图形化蓝宝石衬底
CN202948966U (zh) 具有导光柱的高压led芯片