JP2007228711A - Dc/dcコンバータ - Google Patents
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- H03K17/166—Soft switching
Abstract
【解決手段】非絶縁型のDC/DCコンバータにおいて、ローサイドMOSFET3のゲートを駆動するローサイド用のプリドライバ5の基準電位は、ハイサイドMOSFET2とローサイドMOSFET3とを通る主回路以外から印加されていることで、主回路の寄生インダクタンスの合計は大きくすることなく、ローサイドMOSFET3のソースとプリドライバ5の基準電位の間の寄生インダクタンスが大きくなり、部品追加や駆動方式の変更をせずに、ローサイドMOSFET3のゲートの負電位駆動ができ、セルフターンオン現象を防止できる。
【選択図】図1
Description
図1は、本発明の実施の形態1のシステムインパッケージを用いたDC/DCコンバータの回路図を示す。本実施の形態のDC/DCコンバータにおいて、システムインパッケージ1は、ハイサイドMOSFET(ハイサイドスイッチ)2と、ローサイドMOSFET(ローサイドスイッチ)3と、ハイサイドMOSFET2のゲートを駆動するハイサイド用のプリドライバ4と、ローサイドMOSFET3のゲートを駆動するローサイド用のプリドライバ5からなり、プリドライバ4,5はドライバIC6に1チップ化されており、ハイサイドMOSFET2、ローサイドMOSFET3、ドライバIC6の3チップが1つのパッケージに搭載された構成になっている。
図6は、本発明の実施の形態2のディスクリートデバイスを用いたDC/DCコンバータの回路図を示す。本実施の形態2では、プリドライバ5の基準電位を、配線35により入力コンデンサ14のグラウンド側端子の直近でとることを特徴としている。本実施の形態2は、システムインパッケージではなく、従来のディスクリートデバイスを用いたDC/DCコンバータに好適な技術である。
図8は、本発明の実施の形態3の補助ショットキーバリアダイオードを内蔵したDC/DCコンバータの回路図を示す。本実施の形態3では、ローサイドMOSFET3のゲート−ソース間に補助ショットキーバリアダイオード(SBD)36が内蔵されていることが特徴である。本発明では、セルフターンオン時の一瞬だけではあるが、ゲート電圧が負電位になり、その際にプリドライバ5の出力電圧も負電位になるために、ドライバIC6内のpn接合が動作し、プリドライバ5が誤動作や破壊を生じる可能性がある。
Claims (10)
- ハイサイドスイッチと、ローサイドスイッチと、前記ハイサイドスイッチを駆動するハイサイド用プリドライバと、前記ローサイドスイッチを駆動するローサイド用プリドライバとを有する非絶縁型のDC/DCコンバータであって、
前記ローサイドスイッチのゲートを駆動する前記ローサイド用プリドライバの基準電位は、前記ハイサイドスイッチと前記ローサイドスイッチとを通る主回路以外から印加されていることを特徴とするDC/DCコンバータ。 - 請求項1に記載のDC/DCコンバータにおいて、
前記ローサイド用プリドライバの基準電位は、ロジックグラウンドから印加されていることを特徴とするDC/DCコンバータ。 - ハイサイドスイッチと、ローサイドスイッチと、前記ハイサイドスイッチを駆動するハイサイド用プリドライバ及び前記ローサイドスイッチを駆動するローサイド用プリドライバを1チップ化したドライバICとを、1パッケージ化したシステムインパッケージを用いた非絶縁型のDC/DCコンバータであって、
前記ローサイドスイッチのゲートを駆動する前記ローサイド用プリドライバの基準電位は、前記ハイサイドスイッチと前記ローサイドスイッチとを通る主回路以外から印加されていることを特徴とするDC/DCコンバータ。 - 請求項3に記載のDC/DCコンバータにおいて、
前記ローサイド用プリドライバの基準電位は、ロジックグラウンドから印加されていることを特徴とするDC/DCコンバータ。 - 請求項4に記載のDC/DCコンバータにおいて、
前記ローサイド用プリドライバの基準電位は、前記ドライバIC内の配線によって、前記ロジックグラウンドに接続して印加されていることを特徴とするDC/DCコンバータ。 - 請求項4に記載のDC/DCコンバータにおいて、
前記ローサイド用プリドライバの基準電位は、前記基準電位と前記ドライバICの搭載されているタブとをワイヤボンディングで接続することによって、前記ロジックグラウンドに接続して印加されていることを特徴とするDC/DCコンバータ。 - ハイサイドスイッチと、ローサイドスイッチと、前記ハイサイドスイッチを駆動するハイサイド用プリドライバと、前記ローサイドスイッチを駆動するローサイド用プリドライバとを有する非絶縁型のDC/DCコンバータであって、
前記ローサイドスイッチのゲートを駆動する前記ローサイド用プリドライバの基準電位は、プリント基板の配線パターンによって、入力コンデンサのグラウンド端子側の直近から印加されていることを特徴とするDC/DCコンバータ。 - 請求項1〜7のいずれか1項に記載のDC/DCコンバータにおいて、
前記ローサイドスイッチのゲート−ソース間にショットキーバリアダイオードが接続されていること特徴とするDC/DCコンバータ。 - 請求項8に記載のDC/DCコンバータにおいて、
前記ショットキーバリアダイオードは、前記ローサイドスイッチと同一チップ上に内蔵されていることを特徴とするDC/DCコンバータ。 - 請求項1〜9のいずれか1項に記載のDC/DCコンバータにおいて、
前記ハイサイドスイッチ及び前記ローサイドスイッチは、パワーMOSFETからなること特徴とするDC/DCコンバータ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2006046171A JP4739059B2 (ja) | 2006-02-23 | 2006-02-23 | Dc/dcコンバータ用半導体装置 |
US11/624,837 US7821243B2 (en) | 2006-02-23 | 2007-01-19 | DC/DC converter |
US12/818,803 US8049479B2 (en) | 2006-02-23 | 2010-06-18 | DC/DC converter package having separate logic and power ground terminals |
US13/230,947 US8638577B2 (en) | 2006-02-23 | 2011-09-13 | Semiconductor device for DC-DC converter including high side and low side semiconductor switches |
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JP2006046171A JP4739059B2 (ja) | 2006-02-23 | 2006-02-23 | Dc/dcコンバータ用半導体装置 |
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JP2010175293A Division JP5214675B2 (ja) | 2010-08-04 | 2010-08-04 | 半導体装置 |
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Cited By (8)
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JP2010027709A (ja) * | 2008-07-16 | 2010-02-04 | Toshiba Corp | 半導体装置 |
JP2011040777A (ja) * | 2010-10-07 | 2011-02-24 | Toshiba Corp | 半導体装置 |
US8018255B2 (en) | 2007-07-12 | 2011-09-13 | Renesas Electronics Corporation | DC-DC converter, driver IC, and system in package |
JP2013509152A (ja) * | 2009-10-20 | 2013-03-07 | 日本テキサス・インスツルメンツ株式会社 | 同期整流器制御のシステム及び方法 |
JP2013084992A (ja) * | 2013-01-21 | 2013-05-09 | Toshiba Corp | 半導体装置 |
JP2014128097A (ja) * | 2012-12-26 | 2014-07-07 | Renesas Electronics Corp | 半導体集積回路およびその動作方法 |
WO2016030954A1 (ja) * | 2014-08-25 | 2016-03-03 | 株式会社日立製作所 | 駆動回路、電力変換装置、およびモータシステム |
WO2021059585A1 (ja) * | 2019-09-27 | 2021-04-01 | ローム株式会社 | 電力変換回路、パワーモジュール、コンバータ、及びインバータ |
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JP4739059B2 (ja) | 2006-02-23 | 2011-08-03 | ルネサスエレクトロニクス株式会社 | Dc/dcコンバータ用半導体装置 |
US7605611B2 (en) * | 2007-10-24 | 2009-10-20 | Micron Technology, Inc. | Methods, devices, and systems for a high voltage tolerant buffer |
US7929321B2 (en) * | 2008-08-22 | 2011-04-19 | Force-Mos Technology Corp | Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications |
JP4963518B2 (ja) * | 2008-09-09 | 2012-06-27 | トヨタ自動車株式会社 | 電圧変換装置及び電気負荷駆動装置 |
EP2202794A3 (en) * | 2008-12-23 | 2012-07-04 | Intersil Americas Inc. | Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETs, structure and method |
US8168490B2 (en) | 2008-12-23 | 2012-05-01 | Intersil Americas, Inc. | Co-packaging approach for power converters based on planar devices, structure and method |
JP5406802B2 (ja) | 2010-08-05 | 2014-02-05 | 矢崎総業株式会社 | 負荷制御装置 |
US8558522B2 (en) * | 2010-12-18 | 2013-10-15 | Semiconductor Components Industries, Llc | Method for scaling a drive signal and circuit therefor |
JP2013070263A (ja) * | 2011-09-22 | 2013-04-18 | Renesas Electronics Corp | 電力変換回路、多相ボルテージレギュレータ、及び電力変換方法 |
EP2789092B1 (en) * | 2011-12-07 | 2020-02-05 | TM4 Inc. | Turn-off overvoltage limiting for igbt |
US8570075B2 (en) * | 2011-12-29 | 2013-10-29 | Nxp B.V. | Gate driver with digital ground |
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US7821243B2 (en) | 2010-10-26 |
US8049479B2 (en) | 2011-11-01 |
US20100253306A1 (en) | 2010-10-07 |
US20120001609A1 (en) | 2012-01-05 |
US20070195563A1 (en) | 2007-08-23 |
US8638577B2 (en) | 2014-01-28 |
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