JP2007221126A - 圧力接触部設計のパワー半導体モジュール - Google Patents
圧力接触部設計のパワー半導体モジュール Download PDFInfo
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- JP2007221126A JP2007221126A JP2007030494A JP2007030494A JP2007221126A JP 2007221126 A JP2007221126 A JP 2007221126A JP 2007030494 A JP2007030494 A JP 2007030494A JP 2007030494 A JP2007030494 A JP 2007030494A JP 2007221126 A JP2007221126 A JP 2007221126A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000001816 cooling Methods 0.000 claims abstract description 12
- 239000011810 insulating material Substances 0.000 claims description 23
- 238000003825 pressing Methods 0.000 claims description 21
- 238000000465 moulding Methods 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- 238000009413 insulation Methods 0.000 abstract description 5
- 239000000470 constituent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 6
- 238000009421 internal insulation Methods 0.000 description 5
- 238000010137 moulding (plastic) Methods 0.000 description 5
- 239000002985 plastic film Substances 0.000 description 4
- 229920006255 plastic film Polymers 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
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Abstract
【解決手段】本発明は、冷却アセンブリにおける配置用の圧力接触部設計のパワー半導体モジュールに関して記載し、負荷接続要素はそれぞれ、少なくとも1つのストリップ状の断面および断面から発する複数の接触フットを有する金属成形物の形である。この場合には、負荷接続要素のそれぞれのストリップ状の断面は、基板面に平行に、基板面から一定の距離で配置される。さらに、接触フットは、ストリップ状の断面から回路に適した態様の負荷接続の接触部を成形する基板まで延在する。絶縁材料成形物は、負荷接続要素のストリップ状の断面と基板との間に配置され、接触フットを通すための凹部を有する。
【選択図】図1
Description
2 冷却アセンブリ
3 筐体
30 絶縁材料成形物
32 凹部
34 シャフト
38 ドーム状のブッシング
300 固着素子
302 固着素子
40、42、44 負荷接続要素
46 絶縁
400、420、440 接触フット
402、422、442 ストリップ状の断面
404、424、444 接触素子
406、426、446、466 凹部
410 電流センサ
5 基板
52 絶縁材料本体
54 相互接続部
56 銅コーティング
60 パワー半導体素子
62 ワイヤボンディング接続部
64 フリーホイーリングダイオード
70 押圧装置
72 押圧要素
80 補助接続要素
90 スナップ作動掛止接続
Claims (7)
- 冷却アセンブリ(2)上に配置するための圧力接触部設計のパワー半導体モジュール(1)であって、前記パワー半導体モジュールは、少なくとも1つの基板(5)と、この基板(5)に配置された少なくとも2個のパワー半導体素子(60、64)と、筐体(3)と、外部に通じる負荷接続要素(40、42、44)および補助接続要素(80)と、押圧装置(70)とを有し、前記基板(5)は絶縁材料本体(52)および相互接続部(54)を有し、負荷電位が前記パワー半導体モジュールの内側に面する前記基板の第1の主面に配置され、前記負荷接続要素(40、42、44)はそれぞれ、少なくとも1つのストリップ状の断面(402、422、442)と当該断面(402、422、442)から発する複数の接触フット(400、420、440)とを有する金属成形物の形状を有し、前記負荷接続要素のそれぞれのストリップ状の断面(402、422、442)は、前記基板面に対して平行に、前記基板面から一定の距離に配置され、前記接触フット(400、420、440)は、前記ストリップ状の断面(402、422、442)から回路に適するように負荷接続の接触部を成形する前記基板(5)まで延在し、絶縁材料成形物(30)は、前記負荷接続要素(40、42、44)のストリップ状の断面(402、422、442)と前記基板(5)との間に配置され、前記接触フット(400、420、440)を通すための凹部(32)を有する、パワー半導体モジュール(1)。
- 前記接触フット(400、420、440)を通すための前記絶縁材料成形物(30)の凹部(32)は、このためにガイドの形状をしており、前記接触フット(400、420、440)は、前記基板(5)の相互接続部(54)に接触接続する、請求項1に記載のパワー半導体モジュール(1)。
- 前記絶縁材料成形物(30)および前記筐体(3)が一体に形成される、請求項1に記載のパワー半導体モジュール(1)。
- 前記接触フットを通すための前記絶縁材料成形物(30)の凹部(32)は、シャフト(34)の形状をしており、これらシャフト(34)は前記基板(5)の面付近まで延在し、絶縁層の中まで延在する、請求項1に記載のパワー半導体モジュール(1)。
- 前記負荷接続要素(40、42、44)のストリップ状の断面(400、420、440)は、互いに電気的に絶縁される積層を形成し、前記押圧装置(70)はこれら積層に圧力を及ぼし、したがって、前記接触フット(400、420、440)は、前記基板(5)の相互接続部(54)に導電接続される、請求項1に記載のパワー半導体モジュール(1)。
- 前記押圧装置(70)、前記負荷接続要素(40、42、44)のストリップ状の断面(402、422、442)および前記絶縁材料成形物(30)は、接触素子を有する螺旋形ばねの形状をした補助接続要素(80)を通すための凹部(32)を有する、請求項1に記載のパワー半導体モジュール(1)。
- 前記絶縁材料成形物(30)は、前記補助接続要素(80)を通すための凹部の周囲にドーム(38)を有する、請求項6に記載のパワー半導体モジュール(1)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102006006425A DE102006006425B4 (de) | 2006-02-13 | 2006-02-13 | Leistungshalbleitermodul in Druckkontaktausführung |
DE102006006425.9 | 2006-02-13 |
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JP2007221126A true JP2007221126A (ja) | 2007-08-30 |
JP5114064B2 JP5114064B2 (ja) | 2013-01-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007030494A Active JP5114064B2 (ja) | 2006-02-13 | 2007-02-09 | 圧力接触部設計のパワー半導体モジュール |
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Country | Link |
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US (1) | US7589418B2 (ja) |
EP (1) | EP1843393B1 (ja) |
JP (1) | JP5114064B2 (ja) |
KR (1) | KR101204630B1 (ja) |
CN (1) | CN101064299B (ja) |
DE (1) | DE102006006425B4 (ja) |
DK (1) | DK1843393T3 (ja) |
ES (1) | ES2403072T3 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010028118A (ja) * | 2008-07-22 | 2010-02-04 | Semikron Elektronik Gmbh & Co Kg | パワー半導体モジュール |
JP2017228811A (ja) * | 2017-10-10 | 2017-12-28 | 三菱電機株式会社 | 半導体装置 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102006006424B4 (de) * | 2006-02-13 | 2011-11-17 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren |
DE102006006423B4 (de) * | 2006-02-13 | 2009-06-10 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und zugehöriges Herstellungsverfahren |
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DE102006006425A1 (de) | 2007-08-23 |
KR101204630B1 (ko) | 2012-11-23 |
EP1843393B1 (de) | 2013-03-13 |
US7589418B2 (en) | 2009-09-15 |
KR20070081744A (ko) | 2007-08-17 |
EP1843393A3 (de) | 2008-04-30 |
DK1843393T3 (da) | 2013-06-10 |
EP1843393A2 (de) | 2007-10-10 |
JP5114064B2 (ja) | 2013-01-09 |
ES2403072T3 (es) | 2013-05-13 |
US20070194429A1 (en) | 2007-08-23 |
DE102006006425B4 (de) | 2009-06-10 |
CN101064299A (zh) | 2007-10-31 |
CN101064299B (zh) | 2010-12-22 |
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