CN101064299B - 压力接触构造的功率半导体模块 - Google Patents

压力接触构造的功率半导体模块 Download PDF

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CN101064299B
CN101064299B CN2007100052646A CN200710005264A CN101064299B CN 101064299 B CN101064299 B CN 101064299B CN 2007100052646 A CN2007100052646 A CN 2007100052646A CN 200710005264 A CN200710005264 A CN 200710005264A CN 101064299 B CN101064299 B CN 101064299B
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power semiconductor
substrate
contact
semiconductor modular
insulating material
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CN101064299A (zh
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R·波普
M·莱德勒
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Abstract

本发明涉及一种压力接触构造的功率半导体模块，用于设置在一冷构件上，其中多个负载连接元件分别构成为金属成型体包括至少一个带形部分和许多由带形部分伸出的接触底脚。在这里负载连接元件的各一个带形部分平行于基片表面并与基片表面间隔开设置。此外各接触底脚从带形部分延伸至基片并在那里电路合理地构成负载连接的触点。在各负载连接元件的带形部分与基片之间设置一绝缘材料成型体，并且该绝缘材料成型体具有多个孔隙用以通过接触底脚，以及，负载连接元件(40、42、44)的带形部分(400、420、440)构成一叠并且在此叠中彼此电绝缘，并且压力装置(70)向该叠施加压力并从而接触底脚与基片(5)的各印制导线(54)导电地相连接。

Description

压力接触构造的功率半导体模块
技术领域
本发明描述一种压力接触构造的包括多个可控的功率半导体构件的功率半导体模块。
 背景技术
例如由DE19719703A1已知的功率半导体模块构成本发明的出发点。
这样的功率半导体模块按照现有技术包括一壳体与至少一个在其中设置的电绝缘的基片优选用以直接安装在一冷构件上。该基片自身包括一绝缘材料体与许多在其上相互相对绝缘的金属连接印制导线和多个在其上并与这些连接印制导线电路合理地(schaltungsgerechte)连接的功率半导体构件。此外已知的功率半导体模块具有多个连接元件用于外部的负载连接和辅助连接以及多个在内部设置的连接元件。这些用于在功率半导体模块内部电路合理连接的连接元件大多构成为金属线束连接。
同样已知压力接触的功率半导体模块，如其由DE42 37 632A1、DE199 03 875A1或DE101 37 947C1已知的。在第一所述的公开文件中压力装置具有一稳定的优选金属的压力元件用以建立压力、一弹性的软垫元件用以存储压力和一桥接元件用以向基片表面的分开的区域引入压力。桥接元件优选构成为一塑料成型体包括一面向软垫元件的表面，从该表面向基片表面伸出许多压杆。
借助于一这样的压力装置将基片压向一冷构件并从而持久可靠地建立基片与冷构件之间的热交换。弹性的软垫元件在这里有助于在不同的热负荷时和在功率半导体模块的整个寿命周期上保持恒定的压力状况。
DE 199 03 875A1进一步构成已知的压力元件，使其一方面具有一特别有利的包括重量和稳定性的状况而另一方面具有多个电绝缘的通道。为此压力元件构成为一具有内部的金属内芯的塑料成型体。该金属内芯具有多个孔隙用于在弹簧接触制造中各连接元件、特别是辅助连接元件的通道。塑料成型体包围这些孔隙，而使各辅助连接元件借助于塑料成型体与金属内芯电绝缘。
还已知进一步构成的压力元件，该压力元件在其面向基片的表面 具有许多压杆。优选在这里金属内芯还具有一预调的挠度。在两措施的组合中一这样的压力元件可以提供一上述压力装置的全部功能度。
由DE 101 57 947C1已知一种功率半导体模块，其中负载连接元件构成使它们在紧邻的部分内具有多个垂直于基片表面延伸的并从那里伸出的接触底脚，其建立与各印制电路的电接触和同时向基片施加压力并从而建立其向一冷构件的热接触。在这里利用按现有技术的装置引入和存储压力。
由DE 10 2004 021 927A1已知一种用于功率半导体模块的内部绝缘的方法，其中该方法不同于上述的现有技术并不将绝缘的硅胶填满到一确定的填满高度。与此不同介绍一种用于待绝缘的构件和连接元件的涂层的方法，其节省很大量的硅胶。
 发明内容
本发明的目的在于介绍一种压力接触构造的功率半导体模块，其中改善内部的绝缘，简化压力接触制造的构成并且功率半导体模块构成有利于涂层方法的应用以对基片绝缘。
按照本发明以下的措施达到该目的。
压力接触构造的功率半导体模块，用于设置在一冷构件上，所述功率半导体模块包括至少一个基片；至少两个在基片上设置的功率半导体元件；一壳体；通向外面的多个负载连接元件；辅助连接元件；以及一压力装置，其中，基片具有一绝缘材料体并且在其面向功率半导体模块的内部的第一主表面上设置各包括负载电位的印制导线，其中负载连接元件分别构成为金属成型体，所述金属成型体包括至少一个带形部分和许多由带形部分伸出的接触底脚，负载连接元件的各一个带形部分平行于基片表面并与基片表面间隔开设置，并且接触底脚从带形部分延伸至基片并在那里电路合理地构成负载连接的触点，并且在负载连接元件的带形部分与基片之间设置一绝缘材料成型体，并且该绝缘材料成型体具有多个孔隙用以通过接触底脚，以及，负载连接元件的带形部分构成一叠并且在此叠中彼此电绝缘，并且压力装置向该叠施加压力并从而接触底脚与基片的各印制导线导电地相连接。
本发明的构想从一压力接触构造用于设置在一冷构件上的功率半导体模块出发，其包括至少一个基片、至少两个可控的功率半导体构件，例如二极晶体管、一壳体和多个通向外面的负载连接元件和控制连接元件。基片本身具有一绝缘材料体并且在其面向功率半导体模块内部的第一主表面上具有各包括负载电位的印制导线。此外基片优选 还具有一包括控制电位的印制导线用以控制各功率半导体构件。
本发明的功率半导体模块还具有多个负载连接元件，其分别构成为金属成型体，所述金属成型体包括一带形部分和许多由带形部分伸出的接触底脚。各相应的带形部分平行于基片表面并与其间隔开设置。从带形部分伸出的各接触底脚延伸至基片并在那里电路合理地构成负载连接的触点。优选各接触底脚为此在基片上触点接通各具有负载电位的印制导线或也直接触点接通各单个功率半导体构件。
此外在各负载连接元件的在这里构成一叠的带形部分与基片之间设置一绝缘材料成型体。该绝缘材料成型体具有多个孔隙用以通过接触底脚。绝缘材料成型体在这里优选构成一完全封闭的表面，其只具有用于各电连接元件的孔隙。此外可以优选的是，绝缘材料成型体还具有用于功率半导体模块在冷构件上的各固定装置的孔隙。
这样构成的在压力接触构造的功率半导体模块由于在各负载连接元件的带形部分与基片之间的附加的绝缘的中间层具有一显著改善的内部绝缘，所述包括各功率半导体构件和模块内部的连接。这允许在功率半导体模块的持续工作中改善的故障安全性。
通过用于与中间层一体构成的各负载连接元件的有利的附加的导向装置，同时简化压力接触制造的构成，其中各负载连接元件有助于向基片引入压力并从而有助于其在一冷构件上的热连接。与用于基片的内部绝缘的现代的涂层方式相组合，功率半导体模块的该实施形式是特别优选的，因为在这种情况下特别有利地构成全部的内部绝缘并且可达到自动化的制造。
附图说明
借助图1至3的实施例进一步说明本发明的解法。
图1示出一本发明的功率半导体模块的剖面图。
图2示出一本发明的功率半导体模块的三维分解图。
图3示出一本发明的功率半导体模块的各负载连接元件和基片的三维图。
具体实施方式
图1示出一本发明的功率半导体模块1沿线A-A(参见图2)截取的剖面图。其具有一包括一框架形的壳体部分的壳体3。框架形壳体部分在这里包围至少一个基片5。该基片又具有一绝缘材料体52，优选一绝缘陶瓷，例如氧化铝或亚硝酸铝。
基片5在面向功率半导体模块1的内部的第一主表面上具有一结构化的金属蒙皮。优选构成为铜蒙皮的金属蒙皮的各个部分构成功率半导体模块1的各印制导线54。基片5的第二主表面按照现有技术具有非结构化的铜蒙皮56。
在基片5的各印制导线54上设置可控的和/或不受控制的功率半导体构件60例如IGBTs(绝缘门二极晶体管)，其包括各反并联连接的空载二极管；或MOS-FETs。它们电路合理地与其他的印制导线54例如借助于金属线束连接62相连接。
具有不同的必需的电位的负载连接元件40、42、44用作在功率半导体模块1内部的功率电子电路的外部的连接。为此负载连接元件40、42、44构成为金属成型体，它们各具有一平行于基片表面的带形部分402、422、442。带形部分402、422、442在这里构成一叠，其中各个负载连接元件40、42、44的带形部分402、422、442只通过一必需的绝缘件46例如以塑料薄膜形式彼此间隔开。为清晰起见在该剖面图中未示出各必需的辅助连接元件。
此外本发明的功率半导体模块1在负载连接元件40、42、44的带形部分402、422、442的叠与基片5之间具有一构成为绝缘材料成型体30的中间层。该绝缘材料成型体3在该实施形式中借助于一弹性卡口连接设置于框架形的壳体3中。
绝缘材料成型体30自身具有多个孔隙32用以通过负载连接元件40、42、44的接触底脚400、420、440。特别优选的是，这些孔隙32构成为接触底脚400、420、440的导向部，借此以简单的孔隙改善负载连接元件40、42、44相对于基片5或其各印制导线54再次相对于一装置的定位。
在另一特别优选的绝缘材料成型体的实施形式中，用于通过接触 底脚的各孔隙32构成为井筒34，此时这些井筒34一直到达接近基片5的表面附近。有利地这些井筒34一直伸进绝缘材料层例如一硅胶，其中硅胶借助于一现代的涂层方法涂覆在基片5上。由此构成功率半导体模块1的一特别有效的内部绝缘。
用于功率半导体模块1与冷构件2的热连接并同时用于负载连接元件40、42、44与基片5的各印制导线54的电接触的压力装置70通过一用于建立压力的压力元件72和一未示出的弹性的用于存储压力的软垫元件构成。压力经由软垫元件向负载连接元件40、42、44的由带形部分402、422、442组成的叠的方向引入并因此向接触底脚400、420、440施加压力。借此它们与基片5的各印制导线54导电地相连接。
这样的压力接触70在功率半导体模块1的使用寿命期间已证明是特别接触可靠的。此外对于压力接触有利的是，绝缘材料成型体30的孔隙32构成为导向部或井筒34，因此借此接触底脚400、420、440的定位是特别精确的。
压力元件72按照现有技术可以构成为塑料成型体，其具有适当的例如构成为双金属的内部的金属内芯，其中在这种情况下也可以放弃存储压力的软垫元件。此外优选的是，压力元件72同时用作为功率半导体模块1的盖。
图2示出本发明的功率半导体模块1的一部分的三维分解图。其中示出一塑料壳体3，其包括用于在一冷构件上的固定的各装置300。壳体3具有一与其一体构成的绝缘材料成型体30，绝缘材料成型体30构成一中间层，该中间层位于在其下方设置的基片5与在其上方设置的负载连接元件40、42、44的带形部分402、422、442之间。
此外壳体3具有用于未示出的压力元件72的各固定装置302和用于各辅助连接元件80的各拱顶形通道38。在这样的压力接触的功率半导体模块1中特别优选的是，将辅助连接元件构成为接触弹簧80、优选螺旋弹簧。
不同的负载电位的负载连接元件40、42、44分别构成为金属成型 体，其具有用于外部的连接的接触装置404、424、444、至少一个带形的平行于基片表面延伸的部分402、422、442以及许多从该部分伸出的接触底脚400、420、440。相应的负载连接元件40、42、44至此必需的是借助于一绝缘的塑料薄膜46彼此间隔开并且相互相对电绝缘。交流连接元件40还具有一邻接于接触装置404的电流传感器40。
负载连接元件40、42、44的接触底脚400、420、440通过绝缘材料成型体30的构成为导向部的孔隙32向基片5或功率半导体构件60的各印制导线54的配属的接触表面延伸。
负载连接元件40、42、44的带形部分402、422、442及其配属的绝缘的塑料薄膜46本身在那些区域内具有孔隙406、426、446、466，在所述区域内壳体3具有用于辅助连接元件80的拱顶38。配属的未示出的压力装置70本身同样具有相应的与负载连接元件的孔隙对准的孔隙用以通过辅助连接元件。
图3示出一本发明的功率半导体模块1的负载连接元件40、42、44及其相对于两基片5的位置的三维图，未示出壳体和压力装置。为清晰起见同样未示出各个负载连接元件40、42、44之间的绝缘的塑料薄膜。示出的功率半导体模块的电路是一半桥式电路，其包括许多构成相应的第一和第二换流器的平行连接的二极晶体管60。同样电路具有必需的空载二极管64。半桥式电路的第一和第二换流器在这里总是对半分布在两个相同的基片上。
示出许多接触底脚400、420、440，它们从相应的负载连接元件40、42、44配属的带形部分402、422、442的伸出。在这里总是许多相同极性的接触底脚400、420、440接触两个基片5上的相应极性的配属的各印制导线54。借助于上述的压力装置构成持久的接触可靠的电连接。
还示出由负载连接元件40、42、44构成的叠的各个孔隙406、426、446，其设定用于按图2的各辅助连接元件80的设置。

Claims (6)

1.压力接触构造的功率半导体模块(1)，用于设置在一冷构件(2)上，所述功率半导体模块包括至少一个基片(5)；至少两个在基片上设置的功率半导体元件(60、64)；一壳体(3)；通向外面的多个负载连接元件(40、42、44)；辅助连接元件(80)；以及一压力装置(70)，其中，基片(5)具有一绝缘材料体(52)并且在其面向功率半导体模块的内部的第一主表面上设置各包括负载电位的印制导线(54)，其中负载连接元件(40、42、44)分别构成为金属成型体，所述金属成型体包括至少一个带形部分(402、422、442)和许多由带形部分伸出的接触底脚(400、420、440)，负载连接元件的各一个带形部分(402、422、442)平行于基片表面并与基片表面间隔开设置，并且接触底脚(400、420、440)从带形部分(402、422、442)延伸至基片(5)并在那里电路合理地构成负载连接的触点，并且在负载连接元件(40、42、44)的带形部分(402、422、442)与基片(5)之间设置一绝缘材料成型体(30)，并且该绝缘材料成型体具有多个孔隙(32)用以通过接触底脚(400、420、440)，以及，负载连接元件(40、42、44)的带形部分(400、420、440)构成一叠并且在此叠中彼此电绝缘，并且压力装置(70)向该叠施加压力并从而接触底脚(400、420、440)与基片(5)的各印制导线(54)导电地相连接。
2.按照权利要求1所述的功率半导体模块(1)，其特征在于，绝缘材料成型体(30)的用于通过接触底脚(400、420、440)的各孔隙(32)构成为用于接触底脚的导向部，并且接触底脚(400、420、440)触点接通基片(5)的各印制导线(54)。
3.按照权利要求1所述的功率半导体模块(1)，其特征在于，绝缘材料成型体(30)与壳体(3)一体构成。
4.按照权利要求1所述的功率半导体模块(1)，其特征在于，绝缘材料成型体(30)的用于通过接触底脚的各孔隙(32)构成为井筒(34)，并且这些井筒(34)一直达到接近基片(5)的表面附近且伸进一绝缘层。
5.按照权利要求1所述的功率半导体模块(1)，其特征在于，压力装置(70)、负载连接元件(40、42、44)的带形部分(402、422、442)和绝缘材料成型体(30)具有多个孔隙(32)用以通过构成为具有接触装置的螺旋弹簧的辅助连接元件(80)。
6.按照权利要求5所述的功率半导体模块(1)，其特征在于，绝缘材料成型体(30)具有围绕用于通过各辅助连接元件(80)的孔隙的拱顶(38)。
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US7589418B2 (en) 2009-09-15
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CN101064299A (zh) 2007-10-31
KR20070081744A (ko) 2007-08-17
ES2403072T3 (es) 2013-05-13
JP5114064B2 (ja) 2013-01-09
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DE102006006425A1 (de) 2007-08-23

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