JP2007208082A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】LSIチップ1(半導体素子)の金バンプ2(端子)に、Agナノ粒子またはSnナノ粒子からなるナノ粒径の金属粒子11をエポキシ樹脂12に分散させてなる接合材料3を転写する(a)。このような構成の半導体素子1と基板4とを、接合材料3と電極5とが対向するように位置決めして、200℃で加熱しながら低荷重下で接合させる(b)。金属粒子11はセラミックのように焼結して、粒子同士が結合して低温焼結による金属間結合が得られる。
【選択図】図1
Description
(実施の形態1)
図3は、実施の形態1による製造方法の工程を示す図である。まず、粒子径:100nmの金属ナノ粒子(Agナノ粒子またはSnナノ粒子)をエポキシ樹脂に分散させてなる接合材料3を、転写ステージ31上に形成する(図3(a))。この転写ステージ31には、スキージ(図示せず)が取り付けられており、転写ステージ31とスキージとのギャップにより、接点材料3の厚さを制御できる。
図4は、実施の形態2による製造方法の工程を示す図である。まず、実施の形態1と同一の条件にて、LSIチップ1の各金バンプ2に接点材料3を転写する(図4(a))。次に、120℃の温度で、接点材料3中の溶剤成分の除去と金属ナノ粒子の仮焼成とを行う(図4(b))。
金バンプ(端子)に荷重をかけると同時に、合成樹脂(接着剤)の硬化を行う圧接方式を用いて、比較例を製造する。塗布機(FAD320s、武蔵エンジニアリング製)を用いて、実施の形態1,2と同様の基板上に封止樹脂(UFR107、ナガセケムテックス製)を塗布し、フリップチップボンダ(FCB−2、パナソニックFSエンジニアリング製)を用いて、実施の形態1,2と同様のLSIチップ(半導体素子)と封止樹脂が塗布された基板とを位置合せし、加熱温度200℃、荷重19.6Nまたは荷重78.4Nの条件で10秒間の接合を行った後、恒温槽を用いて150℃で2時間、封止樹脂を硬化させる。
(付記1) 半導体素子の端子と基板の電極とを接続させる半導体装置の製造方法において、前記端子と前記電極との間にナノ粒径の金属粒子を介在させ、該金属粒子を焼結させて前記端子と前記電極との電気的接続を得ることを特徴とする半導体装置の製造方法。
2 金バンプ(端子)
3 接合材料
4 基板
5 電極
11 金属粒子
12 エポキシ樹脂(合成樹脂)
31 転写ステージ
32,33 封止樹脂
Claims (5)
- 半導体素子の端子と基板の電極とを接続させる半導体装置の製造方法において、
前記端子と前記電極との間にナノ粒径の金属粒子を介在させ、該金属粒子を焼結させて前記端子と前記電極との電気的接続を得ることを特徴とする半導体装置の製造方法。 - 前記金属粒子として、前記端子及び/または前記電極と合金化する金属粒子を使用することを特徴とする請求項1記載の半導体装置の製造方法。
- 前記金属粒子を合成樹脂中に分散させた材料を前記端子に転写することを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記端子と前記電極とを接続した後に、前記半導体素子と前記基板との間に封止用の合成樹脂を注入することを特徴とする請求項1乃至3の何れかに記載の半導体装置の製造方法。
- 前記基板上に封止用の合成樹脂を予め形成しておき、前記端子と前記電極との接続、及び前記合成樹脂の硬化とを同時的に行うことを特徴とする請求項1乃至3の何れかに記載の半導体装置の製造方法。
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Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008105425A1 (ja) * | 2007-02-28 | 2008-09-04 | Shinkawa Ltd. | ボンディング装置及びボンディング方法 |
JP2009224615A (ja) * | 2008-03-17 | 2009-10-01 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
JP2009302511A (ja) * | 2008-05-12 | 2009-12-24 | Tanaka Holdings Kk | バンプ及び該バンプの形成方法並びに該バンプが形成された基板の実装方法 |
JP2010272818A (ja) * | 2009-05-25 | 2010-12-02 | Panasonic Corp | 実装構造体、およびその製造方法 |
KR101051045B1 (ko) | 2009-06-02 | 2011-07-21 | 중앙대학교 산학협력단 | 도전성 접착제를 이용한 단자간 접속방법 |
CN101593712B (zh) * | 2009-06-26 | 2012-01-04 | 天津大学 | 大功率芯片连接的低温烧结方法及纳米银膏厚度控制装置 |
US8106306B2 (en) | 2008-09-05 | 2012-01-31 | Samsung Electro-Mechanics Co., Ltd. | Ceramic multi-layer circuit substrate and manufacturing method thereof |
JP2012054358A (ja) * | 2010-08-31 | 2012-03-15 | Fujitsu Ltd | 電子装置の製造方法 |
JP2012069545A (ja) * | 2010-09-21 | 2012-04-05 | Toyoda Gosei Co Ltd | 発光素子の搭載方法 |
WO2015005371A1 (ja) * | 2013-07-09 | 2015-01-15 | 株式会社ダイセル | 銀ナノ粒子を用いた半導体装置及びその製造方法 |
WO2015034078A1 (ja) | 2013-09-09 | 2015-03-12 | Dowaメタルテック株式会社 | 電子部品搭載基板およびその製造方法 |
JP2015106654A (ja) * | 2013-11-29 | 2015-06-08 | 富士通株式会社 | 接合方法、半導体装置の製造方法、及び半導体装置 |
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