JP2007197745A - プラズマcvd用基板ホルダー、太陽電池の製造方法及び太陽電池 - Google Patents
プラズマcvd用基板ホルダー、太陽電池の製造方法及び太陽電池 Download PDFInfo
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- JP2007197745A JP2007197745A JP2006015685A JP2006015685A JP2007197745A JP 2007197745 A JP2007197745 A JP 2007197745A JP 2006015685 A JP2006015685 A JP 2006015685A JP 2006015685 A JP2006015685 A JP 2006015685A JP 2007197745 A JP2007197745 A JP 2007197745A
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
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- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- -1 or the like Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
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- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
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- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Formation Of Insulating Films (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
従来のプラズマCVD装置は、基板サイズの孔部を開穿した基板ホルダーに基板を並べてSiNx膜などの反射防止膜を製膜する方式をとっており、基板ホルダーの枠体と基板の間には、反応ガスの流れを良くするため、6mm程度の間隔が設けられている。このため、製膜すると、受光面(製膜したい面)のみならず、基板裏面にも反応ガスが回り込み、少なからずSiNxが製膜される。この回り込みSiNxは、次工程の電極形成時に電極形成の妨げとなり、さらにはボール発生の原因となって、割れを誘発する。
【解決手段】
基板ホルダーの略上面もしくは略下面に沿って、略平行に基板を配置することを特徴とするプラズマCVD用基板ホルダーを用いて太陽電池を製造する。特に、基板の受光面となる表面と、基板の受光面となる表面側に近接する側の基板ホルダーの枠体の面との間隔を0mm以上2mm以下とする。
【選択図】 図2
Description
PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS 2004; 12:21−31
本発明の間隔2mmの基板ホルダー(実施例1)及び間隔0mmの基板ホルダー(実施例2)の能力を検証するため、従来の間隔の大きい(6mm)基板ホルダー(比較例1)を用意、さらに、比較用に間隔3mmの基板ホルダー(比較例2)も用意し、四者を用いてそれぞれSiNx膜を製膜して比較した。
Claims (4)
- 配設される基板に対応して複数個の孔部を開穿した基板ホルダー枠体と、当該基板ホルダー枠体の上面もしくは下面に沿って、略平行に基板を配設することができるように当該基板ホルダー枠体に設けられた基板支持具とを有し、前記基板の受光面となる表面に反応ガスを用いてCVD膜を形成させるために使用されるプラズマCVD用基板ホルダーであって、前記基板の受光面となる表面側に近接する側の前記基板ホルダー枠体の面と前記基板の受光面となる表面との間隔が0mm以上2mm以下であることを特徴とするプラズマCVD用基板ホルダー。
- 前記反応ガスがモノシランにアンモニア、窒素又は水素のいずれか1種以上を混合した混合ガスであることを特徴とする請求項1記載のプラズマCVD用基板ホルダー。
- 請求項1又は2に記載のプラズマCVD用基板ホルダーを用いて、前記基板の表面にCVD膜を形成することを特徴とする太陽電池の作製方法。
- 請求項3の作製方法により作製されることを特徴とする太陽電池。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010532086A (ja) * | 2007-04-12 | 2010-09-30 | アプライド マテリアルズ インコーポレイテッド | 太陽電池の窒化シリコンパッシベーション |
WO2012132961A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換素子の製造方法 |
JP2013183114A (ja) * | 2012-03-05 | 2013-09-12 | Sharp Corp | 太陽電池の製造方法、製造装置及び太陽電池 |
DE112016004804T5 (de) | 2015-10-20 | 2018-07-19 | Mitsubishi Electric Corporation | Herstellungsverfahren für eine solarzelle, solarzelle und vorrichtung zur herstellung von solarzellen |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108091723A (zh) * | 2016-11-22 | 2018-05-29 | 福建金石能源有限公司 | 一种载板组合及加热装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0215174A (ja) * | 1988-07-01 | 1990-01-18 | Canon Inc | マイクロ波プラズマcvd装置 |
JPH02100323A (ja) * | 1988-10-06 | 1990-04-12 | Nec Corp | プラズマcvd装置 |
JPH11135818A (ja) * | 1997-10-30 | 1999-05-21 | Sharp Corp | 太陽電池 |
JP2001185605A (ja) * | 1999-12-24 | 2001-07-06 | Sharp Corp | 基板保持機構およびそれを用いた化合物半導体の製造方法 |
JP2004335861A (ja) * | 2003-05-09 | 2004-11-25 | Sharp Corp | 薄膜形成装置 |
JP2005150486A (ja) * | 2003-11-18 | 2005-06-09 | Hitachi Cable Ltd | 気相エピタキシャル成長装置 |
-
2006
- 2006-01-24 JP JP2006015685A patent/JP4716881B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0215174A (ja) * | 1988-07-01 | 1990-01-18 | Canon Inc | マイクロ波プラズマcvd装置 |
JPH02100323A (ja) * | 1988-10-06 | 1990-04-12 | Nec Corp | プラズマcvd装置 |
JPH11135818A (ja) * | 1997-10-30 | 1999-05-21 | Sharp Corp | 太陽電池 |
JP2001185605A (ja) * | 1999-12-24 | 2001-07-06 | Sharp Corp | 基板保持機構およびそれを用いた化合物半導体の製造方法 |
JP2004335861A (ja) * | 2003-05-09 | 2004-11-25 | Sharp Corp | 薄膜形成装置 |
JP2005150486A (ja) * | 2003-11-18 | 2005-06-09 | Hitachi Cable Ltd | 気相エピタキシャル成長装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010532086A (ja) * | 2007-04-12 | 2010-09-30 | アプライド マテリアルズ インコーポレイテッド | 太陽電池の窒化シリコンパッシベーション |
WO2012132961A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換素子の製造方法 |
JPWO2012132961A1 (ja) * | 2011-03-25 | 2014-07-28 | 三洋電機株式会社 | 光電変換素子の製造方法 |
US9070822B2 (en) | 2011-03-25 | 2015-06-30 | Panasonic Intellectual Property Management Co., Ltd. | Method for producing photoelectric conversion element |
JP5820989B2 (ja) * | 2011-03-25 | 2015-11-24 | パナソニックIpマネジメント株式会社 | 光電変換素子の製造方法 |
JP2013183114A (ja) * | 2012-03-05 | 2013-09-12 | Sharp Corp | 太陽電池の製造方法、製造装置及び太陽電池 |
DE112016004804T5 (de) | 2015-10-20 | 2018-07-19 | Mitsubishi Electric Corporation | Herstellungsverfahren für eine solarzelle, solarzelle und vorrichtung zur herstellung von solarzellen |
US11447869B2 (en) | 2015-10-20 | 2022-09-20 | Mitsubishi Electric Corporation | Manufacturing method for solar cell, solar cell, and solar cell manufacturing apparatus |
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