JP5820989B2 - 光電変換素子の製造方法 - Google Patents
光電変換素子の製造方法 Download PDFInfo
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- JP5820989B2 JP5820989B2 JP2013507387A JP2013507387A JP5820989B2 JP 5820989 B2 JP5820989 B2 JP 5820989B2 JP 2013507387 A JP2013507387 A JP 2013507387A JP 2013507387 A JP2013507387 A JP 2013507387A JP 5820989 B2 JP5820989 B2 JP 5820989B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000010410 layer Substances 0.000 claims description 235
- 239000004065 semiconductor Substances 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 44
- 239000011241 protective layer Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 90
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 239000007864 aqueous solution Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 238000010248 power generation Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (2)
- n型の結晶系半導体基板と、
前記結晶系半導体基板の受光面側において形成される第1のi型非晶質系半導体層、および、前記第1のi型非晶質系半導体層上に形成される第1のn型非晶質系半導体層を有する第1非晶質系半導体層と、
前記結晶系半導体基板の裏面側において形成される第2のi型非晶質系半導体層と、前記第2のi型非晶質系半導体層上に形成される第2のn型非晶質系半導体層およびp型非晶質系半導体層と、
前記第2のn型非晶質系半導体層上の第1領域に形成される第1電極部と、
前記p型非晶質系半導体層上のうち前記第1領域とは異なる第2領域に形成される第2電極部と、を備える光電変換素子の製造方法であって、
前記結晶系半導体基板の受光面上に前記第1のi型非晶質系半導体層および前記第1のn型非晶質系半導体層を形成する第1工程と、
前記結晶系半導体基板の裏面上に前記第2のi型非晶質系半導体層および前記第2のn型非晶質系半導体層を形成する第2工程と、
前記第1工程と前記第2工程を終えた後に、前記第1のn型非晶質系半導体層上に保護層を形成した後に前記第2のn型非晶質系半導体層上に前記第1電極部と前記第2電極部とを絶縁する絶縁層を形成する第3工程と、
を備えることを特徴とする光電変換素子の製造方法。 - 請求項1に記載の光電変換素子の製造方法において、
前記保護層は、酸化アルミニウム、窒化アルミニウム、窒化ケイ素及び酸化ケイ素のいずれか1つを含むことを特徴とする光電変換素子の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013507387A JP5820989B2 (ja) | 2011-03-25 | 2012-03-16 | 光電変換素子の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011068311 | 2011-03-25 | ||
JP2011068311 | 2011-03-25 | ||
JP2013507387A JP5820989B2 (ja) | 2011-03-25 | 2012-03-16 | 光電変換素子の製造方法 |
PCT/JP2012/056867 WO2012132961A1 (ja) | 2011-03-25 | 2012-03-16 | 光電変換素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2012132961A1 JPWO2012132961A1 (ja) | 2014-07-28 |
JP5820989B2 true JP5820989B2 (ja) | 2015-11-24 |
Family
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JP2013507387A Expired - Fee Related JP5820989B2 (ja) | 2011-03-25 | 2012-03-16 | 光電変換素子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9070822B2 (ja) |
EP (1) | EP2690668A4 (ja) |
JP (1) | JP5820989B2 (ja) |
WO (1) | WO2012132961A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5891382B2 (ja) * | 2011-03-25 | 2016-03-23 | パナソニックIpマネジメント株式会社 | 光電変換素子の製造方法 |
JP6104037B2 (ja) * | 2013-05-02 | 2017-03-29 | 三菱電機株式会社 | 光起電力装置およびその製造方法、光起電力モジュール |
JP2015053303A (ja) * | 2013-09-05 | 2015-03-19 | シャープ株式会社 | 太陽電池セル、太陽電池モジュール、および太陽電池セルの製造方法。 |
JP6369680B2 (ja) * | 2014-05-30 | 2018-08-08 | パナソニックIpマネジメント株式会社 | 太陽電池 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007197745A (ja) * | 2006-01-24 | 2007-08-09 | Shin Etsu Handotai Co Ltd | プラズマcvd用基板ホルダー、太陽電池の製造方法及び太陽電池 |
WO2010113750A1 (ja) * | 2009-03-30 | 2010-10-07 | 三洋電機株式会社 | 太陽電池 |
JP2011035092A (ja) * | 2009-07-31 | 2011-02-17 | Sanyo Electric Co Ltd | 裏面接合型太陽電池及びそれを用いた太陽電池モジュール |
Family Cites Families (8)
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US4626878A (en) * | 1981-12-11 | 1986-12-02 | Sanyo Electric Co., Ltd. | Semiconductor optical logical device |
JP2001189478A (ja) * | 1999-12-28 | 2001-07-10 | Sanyo Electric Co Ltd | 半導体素子及びその製造方法 |
US7307940B2 (en) * | 2003-06-30 | 2007-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Optical pick-up device |
JP2005159171A (ja) * | 2003-11-27 | 2005-06-16 | Kyocera Corp | 太陽電池素子およびその製造方法 |
JP5230222B2 (ja) | 2008-02-21 | 2013-07-10 | 三洋電機株式会社 | 太陽電池 |
US7927910B2 (en) * | 2009-06-28 | 2011-04-19 | Sino-American Silicon Products Inc. | Manufacturing method of solar cell |
CN102044579B (zh) * | 2009-09-07 | 2013-12-18 | Lg电子株式会社 | 太阳能电池 |
FR2953999B1 (fr) * | 2009-12-14 | 2012-01-20 | Total Sa | Cellule photovoltaique heterojonction a contact arriere |
-
2012
- 2012-03-16 WO PCT/JP2012/056867 patent/WO2012132961A1/ja active Application Filing
- 2012-03-16 EP EP12765778.1A patent/EP2690668A4/en not_active Withdrawn
- 2012-03-16 JP JP2013507387A patent/JP5820989B2/ja not_active Expired - Fee Related
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2013
- 2013-09-25 US US14/036,847 patent/US9070822B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007197745A (ja) * | 2006-01-24 | 2007-08-09 | Shin Etsu Handotai Co Ltd | プラズマcvd用基板ホルダー、太陽電池の製造方法及び太陽電池 |
WO2010113750A1 (ja) * | 2009-03-30 | 2010-10-07 | 三洋電機株式会社 | 太陽電池 |
JP2011035092A (ja) * | 2009-07-31 | 2011-02-17 | Sanyo Electric Co Ltd | 裏面接合型太陽電池及びそれを用いた太陽電池モジュール |
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Publication number | Publication date |
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WO2012132961A1 (ja) | 2012-10-04 |
EP2690668A1 (en) | 2014-01-29 |
US20140024167A1 (en) | 2014-01-23 |
EP2690668A4 (en) | 2014-09-03 |
JPWO2012132961A1 (ja) | 2014-07-28 |
US9070822B2 (en) | 2015-06-30 |
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