JP2007189204A5 - - Google Patents

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Publication number
JP2007189204A5
JP2007189204A5 JP2006325510A JP2006325510A JP2007189204A5 JP 2007189204 A5 JP2007189204 A5 JP 2007189204A5 JP 2006325510 A JP2006325510 A JP 2006325510A JP 2006325510 A JP2006325510 A JP 2006325510A JP 2007189204 A5 JP2007189204 A5 JP 2007189204A5
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Japan
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conductivity type
region
diffusion layer
type well
type diffusion
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JP2006325510A
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English (en)
Japanese (ja)
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JP5039368B2 (ja
JP2007189204A (ja
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Priority to JP2006325510A priority Critical patent/JP5039368B2/ja
Priority claimed from JP2006325510A external-priority patent/JP5039368B2/ja
Publication of JP2007189204A publication Critical patent/JP2007189204A/ja
Publication of JP2007189204A5 publication Critical patent/JP2007189204A5/ja
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Publication of JP5039368B2 publication Critical patent/JP5039368B2/ja
Expired - Fee Related legal-status Critical Current
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JP2006325510A 2005-12-13 2006-12-01 半導体記憶装置、その製造方法及びその駆動方法 Expired - Fee Related JP5039368B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006325510A JP5039368B2 (ja) 2005-12-13 2006-12-01 半導体記憶装置、その製造方法及びその駆動方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005358969 2005-12-13
JP2005358969 2005-12-13
JP2006325510A JP5039368B2 (ja) 2005-12-13 2006-12-01 半導体記憶装置、その製造方法及びその駆動方法

Publications (3)

Publication Number Publication Date
JP2007189204A JP2007189204A (ja) 2007-07-26
JP2007189204A5 true JP2007189204A5 (enExample) 2009-04-09
JP5039368B2 JP5039368B2 (ja) 2012-10-03

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ID=38344120

Family Applications (1)

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JP2006325510A Expired - Fee Related JP5039368B2 (ja) 2005-12-13 2006-12-01 半導体記憶装置、その製造方法及びその駆動方法

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JP (1) JP5039368B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2107964B1 (en) 2006-11-03 2016-08-31 Trustees of the Tufts College Biopolymer optical waveguide and method of manufacturing the same
EP2086749B1 (en) 2006-11-03 2013-05-08 Trustees Of Tufts College Nanopatterned biopolymer optical device and method of manufacturing the same
WO2008127402A2 (en) 2006-11-03 2008-10-23 Trustees Of Tufts College Biopolymer sensor and method of manufacturing the same
JP5274878B2 (ja) * 2008-04-15 2013-08-28 パナソニック株式会社 半導体装置及びその製造方法
JP5259246B2 (ja) * 2008-05-09 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置
JP6292041B2 (ja) * 2014-06-11 2018-03-14 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JPWO2023281795A1 (enExample) * 2021-07-09 2023-01-12

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10173157A (ja) * 1996-12-06 1998-06-26 Toshiba Corp 半導体装置
JPH10200077A (ja) * 1997-01-08 1998-07-31 Sony Corp 半導体装置及びその製造方法
JP3528575B2 (ja) * 1998-02-17 2004-05-17 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその製造方法
JP2002164447A (ja) * 2000-11-28 2002-06-07 Sharp Corp 不揮発性半導体メモリの製造方法
EP1385213A4 (en) * 2002-02-21 2008-08-06 Matsushita Electric Industrial Co Ltd SEMICONDUCTOR MEMBER COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
JP4163610B2 (ja) * 2003-12-22 2008-10-08 株式会社東芝 不揮発性半導体記憶装置

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