JP2007139455A - 赤外線検知素子及びその製造方法 - Google Patents
赤外線検知素子及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000001514 detection method Methods 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 23
- 230000001681 protective effect Effects 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000005484 gravity Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 abstract description 48
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 41
- 238000005452 bending Methods 0.000 abstract description 14
- 238000010521 absorption reaction Methods 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 150000004767 nitrides Chemical class 0.000 description 9
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
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Abstract
【解決手段】 基板1に対して赤外線吸収部2を支持し、赤外線吸収部2の温度上昇を検出するサーモパイルとして機能するポリシリコン30,31を含む梁3は、基部32a上に突起部32bが形成されて構成される。
【選択図】 図3
Description
次に、図5の製造工程を示す断面図を参照して、図3に示す赤外線検知素子の製造方法について説明する。図5に示す素子の断面は、図1のa−a線に沿った断面を表している。
2…赤外線吸収部
3,60,80,120…梁
30,31,81,82,121,122…ポリシリコン
32,83,123…保護膜
32a,60a…基部
32b,60b,81a,82a…突起部
50,110…犠牲層
51,111…エッチングストッパー
52,112…窒化膜
53,113a,113b…シリコン酸化膜
54,115…アルミ配線
54,114,116…スリット
55,117…空隙
Claims (6)
- 半導体基板と、
前記半導体基板の上方に前記半導体基板と分離して形成され、赤外線を受光する赤外線受光部と、
前記半導体基板に対して前記赤外線受光部を支持し、前記赤外線受光部の温度上昇を検出するサーモパイルを含む梁と
を有する赤外線検出素子において、
前記梁の断面形状は、少なくとも一つ以上の突起部を有する
ことを特徴とする赤外線検知素子。 - 前記梁の断面形状は、前記赤外線受光部の重心に近い側の高さが最も高い
ことを特徴とする請求項1に記載の赤外線検知素子。 - 半導体基板上に犠牲層を形成する第1の工程と、
前記犠牲層の上に、赤外線を受光する赤外線受光部を形成する第2の工程と、
前記赤外線受光部の温度上昇を検出するサーモパイルを形成する第3の工程と、
前記サーモパイルを覆うように前記サーモパイルの保護膜となる絶縁膜を形成する第4の工程と、
前記絶縁膜を選択的に除去し、前記サーモパイルを含み、前記基板に対して前記赤外線受光部を支持し、断面形状が少なくとも一つ以上の突起部を有する梁を形成する第5の工程と、
前記絶縁膜を貫通するエッチング孔を形成する第6の工程と、
前記エッチング孔を介して、前記半導体基板、前記犠牲層を選択的に除去し、前記半導体基板と前記赤外線受光部との間に空間を形成し、前記半導体基板と前記赤外線受光部とを分離する第7の工程と
を有することを特徴とする赤外線検知素子の製造方法。 - 半導体基板と、
前記半導体基板の上方に前記半導体基板と分離して形成され、赤外線を受光する赤外線受光部と、
前記半導体基板に対して前記赤外線受光部を支持し、前記赤外線受光部の温度上昇を検出するサーモパイルを含む梁と
を有する赤外線検出素子において、
前記サーモパイルの断面形状は、少なくとも一つ以上の突起部を有する
ことを特徴とする赤外線検知素子。 - 前記サーモパイルの突起部は、前記赤外線受光部の重心に近い側に形成されている
ことを特徴とする請求項4に記載の赤外線検知素子。 - 半導体基板上に犠牲層を形成する第1の工程と、
前記犠牲層の上に、赤外線を受光する赤外線受光部を形成する第2の工程と、
前記赤外線受光部の温度上昇を検出するサーモパイルの基部となる第1の抵抗膜を形成する第3の工程と、
前記第1の抵抗膜を覆うように前記サーモパイルの保護膜となる第1の絶縁膜を形成する第4の工程と、
前記第1の抵抗膜上の前記第1の絶縁膜を選択的に除去し、前記第1の絶縁膜が除去された前記第1の抵抗膜上に、前記サーモパイルの突起部となる第2の抵抗膜を形成する第5の工程と、
前記第2の抵抗膜を覆うように前記サーモパイルの保護膜となる第2の絶縁膜を形成し、前記サーモパイルを含み、前記基板に対して前記赤外線受光部を支持し、断面形状が少なくとも一つ以上の突起部を有する梁を形成する第6の工程と、
前記保護膜を貫通するエッチング孔を形成する第7の工程と、
前記エッチング孔を介して、前記半導体基板、前記犠牲層を選択的に除去し、前記半導体基板と前記赤外線受光部との間に空間を形成し、前記半導体基板と前記赤外線受光部とを分離する第8の工程と
を有することを特徴とする赤外線検知素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005330371A JP4742826B2 (ja) | 2005-11-15 | 2005-11-15 | 赤外線検知素子の製造方法 |
US11/598,196 US7687774B2 (en) | 2005-11-15 | 2006-11-13 | Infrared ray sensing element and method of producing the same |
CN2006101451691A CN1967181B (zh) | 2005-11-15 | 2006-11-15 | 红外线传感元件和制造该红外线传感元件的方法 |
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JP2005330371A JP4742826B2 (ja) | 2005-11-15 | 2005-11-15 | 赤外線検知素子の製造方法 |
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JP2007139455A true JP2007139455A (ja) | 2007-06-07 |
JP4742826B2 JP4742826B2 (ja) | 2011-08-10 |
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JP (1) | JP4742826B2 (ja) |
CN (1) | CN1967181B (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2010035739A1 (ja) * | 2008-09-25 | 2010-04-01 | パナソニック電工株式会社 | 赤外線センサ |
WO2010035738A1 (ja) * | 2008-09-25 | 2010-04-01 | パナソニック電工株式会社 | 赤外線センサ |
JP2010078452A (ja) * | 2008-09-25 | 2010-04-08 | Panasonic Electric Works Co Ltd | 赤外線センサおよび赤外線センサモジュール |
JP2010078451A (ja) * | 2008-09-25 | 2010-04-08 | Panasonic Electric Works Co Ltd | 赤外線センサおよび赤外線センサモジュール |
JP2010256370A (ja) * | 2010-08-06 | 2010-11-11 | Panasonic Electric Works Co Ltd | 赤外線センサ |
JP2011145296A (ja) * | 2010-01-18 | 2011-07-28 | Heimann Sensor Gmbh | モノリシックシリコン微細加工式サーモパイル赤外線センサー |
US8445848B2 (en) | 2009-03-31 | 2013-05-21 | Panasonic Corporation | Infrared array sensor |
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JP2009174917A (ja) * | 2008-01-22 | 2009-08-06 | Oki Semiconductor Co Ltd | 赤外線検出素子、及び赤外線検出素子の製造方法 |
JP5625232B2 (ja) * | 2008-10-23 | 2014-11-19 | 日本電気株式会社 | 熱型赤外線固体撮像素子 |
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Cited By (11)
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WO2010035739A1 (ja) * | 2008-09-25 | 2010-04-01 | パナソニック電工株式会社 | 赤外線センサ |
WO2010035738A1 (ja) * | 2008-09-25 | 2010-04-01 | パナソニック電工株式会社 | 赤外線センサ |
JP2010078452A (ja) * | 2008-09-25 | 2010-04-08 | Panasonic Electric Works Co Ltd | 赤外線センサおよび赤外線センサモジュール |
JP2010078451A (ja) * | 2008-09-25 | 2010-04-08 | Panasonic Electric Works Co Ltd | 赤外線センサおよび赤外線センサモジュール |
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US8445848B2 (en) | 2009-03-31 | 2013-05-21 | Panasonic Corporation | Infrared array sensor |
JP2011145296A (ja) * | 2010-01-18 | 2011-07-28 | Heimann Sensor Gmbh | モノリシックシリコン微細加工式サーモパイル赤外線センサー |
KR20150084722A (ko) * | 2010-01-18 | 2015-07-22 | 하이만 센서 게엠베하 | 모놀리식 Si-마이크로 기계 써모파일 적외선 센서 |
KR101869066B1 (ko) * | 2010-01-18 | 2018-06-20 | 하이만 센서 게엠베하 | 모놀리식 Si-마이크로 기계 써모파일 적외선 센서 |
JP2010256370A (ja) * | 2010-08-06 | 2010-11-11 | Panasonic Electric Works Co Ltd | 赤外線センサ |
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US20070114416A1 (en) | 2007-05-24 |
CN1967181A (zh) | 2007-05-23 |
CN1967181B (zh) | 2010-08-11 |
JP4742826B2 (ja) | 2011-08-10 |
US7687774B2 (en) | 2010-03-30 |
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