JP2007103828A5 - - Google Patents
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- Publication number
- JP2007103828A5 JP2007103828A5 JP2005294633A JP2005294633A JP2007103828A5 JP 2007103828 A5 JP2007103828 A5 JP 2007103828A5 JP 2005294633 A JP2005294633 A JP 2005294633A JP 2005294633 A JP2005294633 A JP 2005294633A JP 2007103828 A5 JP2007103828 A5 JP 2007103828A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- floating gate
- gate electrode
- constituting
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 34
- 239000010419 fine particle Substances 0.000 claims 18
- 239000002245 particle Substances 0.000 claims 10
- 230000015572 biosynthetic process Effects 0.000 claims 9
- 239000000470 constituent Substances 0.000 claims 9
- 239000004020 conductor Substances 0.000 claims 8
- 239000011810 insulating material Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- 230000001681 protective effect Effects 0.000 claims 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 4
- 125000004093 cyano group Chemical group *C#N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 125000000524 functional group Chemical group 0.000 claims 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 125000003277 amino group Chemical group 0.000 claims 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 125000002462 isocyano group Chemical group *[N+]#[C-] 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005294633A JP4876520B2 (ja) | 2005-10-07 | 2005-10-07 | 不揮発性半導体メモリ及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005294633A JP4876520B2 (ja) | 2005-10-07 | 2005-10-07 | 不揮発性半導体メモリ及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007103828A JP2007103828A (ja) | 2007-04-19 |
| JP2007103828A5 true JP2007103828A5 (enrdf_load_stackoverflow) | 2008-11-13 |
| JP4876520B2 JP4876520B2 (ja) | 2012-02-15 |
Family
ID=38030445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005294633A Expired - Fee Related JP4876520B2 (ja) | 2005-10-07 | 2005-10-07 | 不揮発性半導体メモリ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4876520B2 (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7846793B2 (en) * | 2007-10-03 | 2010-12-07 | Applied Materials, Inc. | Plasma surface treatment for SI and metal nanocrystal nucleation |
| KR101490109B1 (ko) * | 2007-10-18 | 2015-02-12 | 삼성전자주식회사 | 반도체 소자와 그의 제조 및 동작방법 |
| US8383432B2 (en) * | 2008-08-07 | 2013-02-26 | Sharp Laboratories Of America, Inc. | Colloidal-processed silicon particle device |
| JP5706077B2 (ja) * | 2008-10-02 | 2015-04-22 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | 半導体素子とその製造及び動作方法 |
| CN102496631B (zh) * | 2011-11-25 | 2014-05-21 | 中山大学 | 背电极结构的ZnO基全透明非挥发存储器及制备方法 |
| US10109429B2 (en) | 2013-10-04 | 2018-10-23 | Asahi Kasei Kabushiki Kaisha | Solar cell, manufacturing method therefor, semiconductor device, and manufacturing method therefor |
| CN106328535B (zh) * | 2015-07-02 | 2019-08-27 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其形成方法 |
| TW201825384A (zh) * | 2016-08-22 | 2018-07-16 | 國立研究開發法人科學技術振興機構 | 記憶組件 |
| CN112582541B (zh) * | 2020-12-06 | 2022-07-29 | 南开大学 | 一种基于二维叠层异质结构的垂直单分子膜场效应晶体管及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4635410B2 (ja) * | 2002-07-02 | 2011-02-23 | ソニー株式会社 | 半導体装置及びその製造方法 |
| JP4056817B2 (ja) * | 2002-07-23 | 2008-03-05 | 光正 小柳 | 不揮発性半導体記憶素子の製造方法 |
| JP4514087B2 (ja) * | 2002-09-25 | 2010-07-28 | シャープ株式会社 | メモリ膜構造、メモリ素子及びその製造方法、並びに、半導体集積回路及びそれを用いた携帯電子機器 |
| JP4563652B2 (ja) * | 2003-03-13 | 2010-10-13 | シャープ株式会社 | メモリ機能体および微粒子形成方法並びにメモリ素子、半導体装置および電子機器 |
| JP5419326B2 (ja) * | 2003-10-06 | 2014-02-19 | マサチューセッツ インスティテュート オブ テクノロジー | 不揮発性メモリデバイス |
| JP4420692B2 (ja) * | 2004-02-10 | 2010-02-24 | シャープ株式会社 | メモリ素子の製造方法 |
| JP4696520B2 (ja) * | 2004-10-05 | 2011-06-08 | ソニー株式会社 | 電界効果型トランジスタ及びその製造方法 |
-
2005
- 2005-10-07 JP JP2005294633A patent/JP4876520B2/ja not_active Expired - Fee Related
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