JP2006108169A5 - - Google Patents
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- Publication number
- JP2006108169A5 JP2006108169A5 JP2004289098A JP2004289098A JP2006108169A5 JP 2006108169 A5 JP2006108169 A5 JP 2006108169A5 JP 2004289098 A JP2004289098 A JP 2004289098A JP 2004289098 A JP2004289098 A JP 2004289098A JP 2006108169 A5 JP2006108169 A5 JP 2006108169A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode layer
- forming
- semiconductor
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 claims 333
- 239000004065 semiconductor Substances 0.000 claims 64
- 229910052751 metal Inorganic materials 0.000 claims 18
- 239000002184 metal Substances 0.000 claims 18
- 239000011241 protective layer Substances 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 12
- 238000000059 patterning Methods 0.000 claims 12
- 238000000034 method Methods 0.000 claims 11
- 238000007599 discharging Methods 0.000 claims 9
- 239000004020 conductor Substances 0.000 claims 8
- 238000002425 crystallisation Methods 0.000 claims 8
- 230000008025 crystallization Effects 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 8
- 230000001737 promoting effect Effects 0.000 claims 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- -1 osnium Chemical compound 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004289098A JP4754798B2 (ja) | 2004-09-30 | 2004-09-30 | 表示装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004289098A JP4754798B2 (ja) | 2004-09-30 | 2004-09-30 | 表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006108169A JP2006108169A (ja) | 2006-04-20 |
| JP2006108169A5 true JP2006108169A5 (enrdf_load_stackoverflow) | 2007-11-08 |
| JP4754798B2 JP4754798B2 (ja) | 2011-08-24 |
Family
ID=36377571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004289098A Expired - Fee Related JP4754798B2 (ja) | 2004-09-30 | 2004-09-30 | 表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4754798B2 (enrdf_load_stackoverflow) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3227353B2 (ja) * | 1995-07-13 | 2001-11-12 | 東芝セラミックス株式会社 | 炭化珪素膜被覆部材及びその製造方法 |
| JP5364422B2 (ja) * | 2008-04-17 | 2013-12-11 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| TWI711182B (zh) | 2008-07-31 | 2020-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| TWI529942B (zh) | 2009-03-27 | 2016-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2011027702A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| WO2011043194A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5601822B2 (ja) * | 2009-11-11 | 2014-10-08 | 三菱電機株式会社 | 薄膜トランジスタおよびその製造方法 |
| KR102007134B1 (ko) | 2009-11-27 | 2019-08-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작방법 |
| KR20120106786A (ko) * | 2009-12-08 | 2012-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| CN102714029B (zh) * | 2010-01-20 | 2016-03-23 | 株式会社半导体能源研究所 | 显示装置的显示方法 |
| JP5752447B2 (ja) * | 2010-03-15 | 2015-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2012015491A (ja) * | 2010-06-04 | 2012-01-19 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| US8912547B2 (en) | 2012-01-20 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, display device, and semiconductor device |
| KR101975263B1 (ko) * | 2012-02-07 | 2019-05-08 | 삼성디스플레이 주식회사 | 박막트랜지스터 표시판과 이를 제조하는 방법 |
| RU2547383C2 (ru) * | 2013-08-28 | 2015-04-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) | Способ нанесения эмиссионного слоя |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3420653B2 (ja) * | 1995-03-16 | 2003-06-30 | 株式会社東芝 | 薄膜トランジスタおよび液晶表示素子 |
| JP2000353666A (ja) * | 1999-06-11 | 2000-12-19 | Matsushita Electric Ind Co Ltd | 半導体薄膜およびその製造方法 |
| JP4099933B2 (ja) * | 2000-06-28 | 2008-06-11 | セイコーエプソン株式会社 | 配線の製造方法、配線及び電気光学装置 |
| TW456048B (en) * | 2000-06-30 | 2001-09-21 | Hannstar Display Corp | Manufacturing method for polysilicon thin film transistor liquid crystal display panel |
| JP2002324808A (ja) * | 2001-01-19 | 2002-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2003318193A (ja) * | 2002-04-22 | 2003-11-07 | Seiko Epson Corp | デバイス、その製造方法及び電子装置 |
| JP4741192B2 (ja) * | 2003-01-17 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2004
- 2004-09-30 JP JP2004289098A patent/JP4754798B2/ja not_active Expired - Fee Related