JP4754798B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4754798B2
JP4754798B2 JP2004289098A JP2004289098A JP4754798B2 JP 4754798 B2 JP4754798 B2 JP 4754798B2 JP 2004289098 A JP2004289098 A JP 2004289098A JP 2004289098 A JP2004289098 A JP 2004289098A JP 4754798 B2 JP4754798 B2 JP 4754798B2
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layer
electrode layer
semiconductor
film
region
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Expired - Fee Related
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JP2004289098A
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English (en)
Japanese (ja)
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JP2006108169A (ja
JP2006108169A5 (enrdf_load_stackoverflow
Inventor
舜平 山崎
厳 藤井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004289098A priority Critical patent/JP4754798B2/ja
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Publication of JP2006108169A5 publication Critical patent/JP2006108169A5/ja
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004289098A 2004-09-30 2004-09-30 表示装置の作製方法 Expired - Fee Related JP4754798B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004289098A JP4754798B2 (ja) 2004-09-30 2004-09-30 表示装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004289098A JP4754798B2 (ja) 2004-09-30 2004-09-30 表示装置の作製方法

Publications (3)

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JP2006108169A JP2006108169A (ja) 2006-04-20
JP2006108169A5 JP2006108169A5 (enrdf_load_stackoverflow) 2007-11-08
JP4754798B2 true JP4754798B2 (ja) 2011-08-24

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JP2004289098A Expired - Fee Related JP4754798B2 (ja) 2004-09-30 2004-09-30 表示装置の作製方法

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JP (1) JP4754798B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2547383C2 (ru) * 2013-08-28 2015-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Способ нанесения эмиссионного слоя

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3227353B2 (ja) * 1995-07-13 2001-11-12 東芝セラミックス株式会社 炭化珪素膜被覆部材及びその製造方法
JP5364422B2 (ja) * 2008-04-17 2013-12-11 株式会社半導体エネルギー研究所 発光装置及びその作製方法
TWI711182B (zh) 2008-07-31 2020-11-21 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
TWI529942B (zh) 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
WO2011027702A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5601822B2 (ja) * 2009-11-11 2014-10-08 三菱電機株式会社 薄膜トランジスタおよびその製造方法
KR102007134B1 (ko) 2009-11-27 2019-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
KR20120106786A (ko) * 2009-12-08 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102714029B (zh) * 2010-01-20 2016-03-23 株式会社半导体能源研究所 显示装置的显示方法
JP5752447B2 (ja) * 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
JP2012015491A (ja) * 2010-06-04 2012-01-19 Semiconductor Energy Lab Co Ltd 光電変換装置
US8912547B2 (en) 2012-01-20 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and semiconductor device
KR101975263B1 (ko) * 2012-02-07 2019-05-08 삼성디스플레이 주식회사 박막트랜지스터 표시판과 이를 제조하는 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3420653B2 (ja) * 1995-03-16 2003-06-30 株式会社東芝 薄膜トランジスタおよび液晶表示素子
JP2000353666A (ja) * 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd 半導体薄膜およびその製造方法
JP4099933B2 (ja) * 2000-06-28 2008-06-11 セイコーエプソン株式会社 配線の製造方法、配線及び電気光学装置
TW456048B (en) * 2000-06-30 2001-09-21 Hannstar Display Corp Manufacturing method for polysilicon thin film transistor liquid crystal display panel
JP2002324808A (ja) * 2001-01-19 2002-11-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2003318193A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイス、その製造方法及び電子装置
JP4741192B2 (ja) * 2003-01-17 2011-08-03 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2547383C2 (ru) * 2013-08-28 2015-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Способ нанесения эмиссионного слоя

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