JP2007081335A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2007081335A
JP2007081335A JP2005270816A JP2005270816A JP2007081335A JP 2007081335 A JP2007081335 A JP 2007081335A JP 2005270816 A JP2005270816 A JP 2005270816A JP 2005270816 A JP2005270816 A JP 2005270816A JP 2007081335 A JP2007081335 A JP 2007081335A
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JP
Japan
Prior art keywords
semiconductor device
gate
source
drain
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005270816A
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English (en)
Japanese (ja)
Other versions
JP2007081335A5 (enExample
Inventor
Toshiaki Sano
聡明 佐野
Tomoyuki Ishii
智之 石井
Norifumi Kameshiro
典史 亀代
Toshiyuki Mine
利之 峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2005270816A priority Critical patent/JP2007081335A/ja
Priority to TW095126747A priority patent/TW200717804A/zh
Priority to US11/493,688 priority patent/US8106449B2/en
Priority to CN2006101089198A priority patent/CN1933178B/zh
Publication of JP2007081335A publication Critical patent/JP2007081335A/ja
Publication of JP2007081335A5 publication Critical patent/JP2007081335A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H10D64/259—Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2005270816A 2005-09-16 2005-09-16 半導体装置 Pending JP2007081335A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005270816A JP2007081335A (ja) 2005-09-16 2005-09-16 半導体装置
TW095126747A TW200717804A (en) 2005-09-16 2006-07-21 Semiconductor device
US11/493,688 US8106449B2 (en) 2005-09-16 2006-07-27 Semiconductor device
CN2006101089198A CN1933178B (zh) 2005-09-16 2006-07-28 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005270816A JP2007081335A (ja) 2005-09-16 2005-09-16 半導体装置

Publications (2)

Publication Number Publication Date
JP2007081335A true JP2007081335A (ja) 2007-03-29
JP2007081335A5 JP2007081335A5 (enExample) 2008-10-30

Family

ID=37878895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005270816A Pending JP2007081335A (ja) 2005-09-16 2005-09-16 半導体装置

Country Status (4)

Country Link
US (1) US8106449B2 (enExample)
JP (1) JP2007081335A (enExample)
CN (1) CN1933178B (enExample)
TW (1) TW200717804A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009192872A (ja) * 2008-02-15 2009-08-27 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
JP2011199047A (ja) * 2010-03-19 2011-10-06 Fujitsu Semiconductor Ltd 半導体装置
JP2013058770A (ja) * 2010-01-15 2013-03-28 Semiconductor Energy Lab Co Ltd 半導体装置
CN103065952A (zh) * 2011-10-19 2013-04-24 美格纳半导体有限公司 非易失性存储器件及其制造方法
JP2015130517A (ja) * 2010-09-02 2015-07-16 株式会社半導体エネルギー研究所 半導体装置
JP2018191010A (ja) * 2011-01-26 2018-11-29 株式会社半導体エネルギー研究所 半導体装置
JP2020107905A (ja) * 2009-10-21 2020-07-09 株式会社半導体エネルギー研究所 半導体装置

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KR20220153647A (ko) * 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102339828B (zh) * 2010-07-19 2013-04-24 中国科学院微电子研究所 低功耗半导体存储器及其驱动方法
JP5973165B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
KR101944535B1 (ko) 2012-03-28 2019-01-31 삼성전자주식회사 반도체 기억 소자
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
TWI767772B (zh) * 2014-04-10 2022-06-11 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
US10283171B2 (en) * 2015-03-30 2019-05-07 Taiwan Semicondutor Manufacturing Company, Ltd. Stacked die semiconductor device with separate bit line and bit line bar interconnect structures
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
JP7303006B2 (ja) * 2019-03-29 2023-07-04 ラピスセミコンダクタ株式会社 半導体装置及び半導体装置の製造方法
CN116234296B (zh) * 2022-01-18 2024-09-17 北京超弦存储器研究院 动态存储器以及soc芯片
CN116209244B (zh) * 2022-01-26 2024-02-23 北京超弦存储器研究院 动态存储器及存储装置
CN116234298B (zh) * 2022-01-26 2024-02-23 北京超弦存储器研究院 动态存储器及soc芯片
CN116234299B (zh) * 2022-01-27 2024-02-23 北京超弦存储器研究院 动态存储器及其制作方法、soc芯片
CN117496873A (zh) * 2023-02-03 2024-02-02 武汉华星光电技术有限公司 显示面板和电子终端
CN119136534B (zh) * 2023-06-06 2025-09-26 长鑫存储技术有限公司 一种半导体结构及其制作方法

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Publication number Priority date Publication date Assignee Title
JPS6450536A (en) * 1987-08-21 1989-02-27 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH03177073A (ja) * 1989-12-05 1991-08-01 Seiko Epson Corp 薄膜トランジスタ
JPH0621458A (ja) * 1992-07-02 1994-01-28 Seiko Epson Corp 半導体装置及び半導体装置の製造方法
JPH0685259A (ja) * 1992-07-16 1994-03-25 Fujitsu Ltd 半導体装置およびその製造方法
JPH06334185A (ja) * 1993-05-18 1994-12-02 Sony Corp 薄膜半導体装置
JPH0883913A (ja) * 1994-09-13 1996-03-26 Toshiba Corp 半導体装置
JPH08181327A (ja) * 1994-09-30 1996-07-12 Sgs Thomson Microelectron Inc 薄膜トランジスタ及びその製造方法
JP2002094029A (ja) * 2000-09-14 2002-03-29 Hitachi Ltd 半導体装置及びトランジスタ
JP2004014094A (ja) * 2002-06-11 2004-01-15 Hitachi Ltd 半導体メモリ素子

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JP3177073B2 (ja) 1993-09-01 2001-06-18 守 杉井 レーザー光線利用の寸取方法及びその寸取装置
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JP3955409B2 (ja) * 1999-03-17 2007-08-08 株式会社ルネサステクノロジ 半導体記憶装置
DE19950362C1 (de) * 1999-10-19 2001-06-07 Infineon Technologies Ag DRAM-Zellenanordnung, Verfahren zu deren Betrieb und Verfahren zu deren Herstellung
EP1246258B1 (en) * 2000-01-07 2011-02-23 Sharp Kabushiki Kaisha Semiconductor device and information processing device
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US6395589B1 (en) * 2001-02-12 2002-05-28 Advanced Micro Devices, Inc. Fabrication of fully depleted field effect transistor with high-K gate dielectric in SOI technology
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JP2005056452A (ja) * 2003-08-04 2005-03-03 Hitachi Ltd メモリ及び半導体装置
US6864540B1 (en) * 2004-05-21 2005-03-08 International Business Machines Corp. High performance FET with elevated source/drain region
JP4927321B2 (ja) * 2004-06-22 2012-05-09 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7294890B2 (en) * 2005-03-03 2007-11-13 Agency For Science, Technology And Research Fully salicided (FUSA) MOSFET structure
JP5086625B2 (ja) * 2006-12-15 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR100855967B1 (ko) * 2007-01-04 2008-09-02 삼성전자주식회사 매립형 워드라인 구조를 갖는 반도체 소자 및 그 제조방법

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JPS6450536A (en) * 1987-08-21 1989-02-27 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH03177073A (ja) * 1989-12-05 1991-08-01 Seiko Epson Corp 薄膜トランジスタ
JPH0621458A (ja) * 1992-07-02 1994-01-28 Seiko Epson Corp 半導体装置及び半導体装置の製造方法
JPH0685259A (ja) * 1992-07-16 1994-03-25 Fujitsu Ltd 半導体装置およびその製造方法
JPH06334185A (ja) * 1993-05-18 1994-12-02 Sony Corp 薄膜半導体装置
JPH0883913A (ja) * 1994-09-13 1996-03-26 Toshiba Corp 半導体装置
JPH08181327A (ja) * 1994-09-30 1996-07-12 Sgs Thomson Microelectron Inc 薄膜トランジスタ及びその製造方法
JP2002094029A (ja) * 2000-09-14 2002-03-29 Hitachi Ltd 半導体装置及びトランジスタ
JP2004014094A (ja) * 2002-06-11 2004-01-15 Hitachi Ltd 半導体メモリ素子

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009192872A (ja) * 2008-02-15 2009-08-27 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
JP2020107905A (ja) * 2009-10-21 2020-07-09 株式会社半導体エネルギー研究所 半導体装置
JP2013058770A (ja) * 2010-01-15 2013-03-28 Semiconductor Energy Lab Co Ltd 半導体装置
US8866233B2 (en) 2010-01-15 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2011199047A (ja) * 2010-03-19 2011-10-06 Fujitsu Semiconductor Ltd 半導体装置
JP2015130517A (ja) * 2010-09-02 2015-07-16 株式会社半導体エネルギー研究所 半導体装置
JP2018191010A (ja) * 2011-01-26 2018-11-29 株式会社半導体エネルギー研究所 半導体装置
CN103065952A (zh) * 2011-10-19 2013-04-24 美格纳半导体有限公司 非易失性存储器件及其制造方法

Also Published As

Publication number Publication date
US20070063287A1 (en) 2007-03-22
CN1933178B (zh) 2012-02-29
TW200717804A (en) 2007-05-01
US8106449B2 (en) 2012-01-31
CN1933178A (zh) 2007-03-21

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