JP2007081137A - 光電変換素子及び固体撮像素子 - Google Patents

光電変換素子及び固体撮像素子 Download PDF

Info

Publication number
JP2007081137A
JP2007081137A JP2005267138A JP2005267138A JP2007081137A JP 2007081137 A JP2007081137 A JP 2007081137A JP 2005267138 A JP2005267138 A JP 2005267138A JP 2005267138 A JP2005267138 A JP 2005267138A JP 2007081137 A JP2007081137 A JP 2007081137A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
film
electrode film
conversion element
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005267138A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007081137A5 (enExample
Inventor
Tetsuro Mitsui
哲朗 三ッ井
Daisuke Yokoyama
大輔 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2005267138A priority Critical patent/JP2007081137A/ja
Priority to US11/520,633 priority patent/US7952156B2/en
Publication of JP2007081137A publication Critical patent/JP2007081137A/ja
Publication of JP2007081137A5 publication Critical patent/JP2007081137A5/ja
Priority to US13/092,496 priority patent/US8436441B2/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2005267138A 2005-09-14 2005-09-14 光電変換素子及び固体撮像素子 Pending JP2007081137A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005267138A JP2007081137A (ja) 2005-09-14 2005-09-14 光電変換素子及び固体撮像素子
US11/520,633 US7952156B2 (en) 2005-09-14 2006-09-14 Photoelectric conversion device and solid-state imaging device
US13/092,496 US8436441B2 (en) 2005-09-14 2011-04-22 Photoelectric conversion device and solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005267138A JP2007081137A (ja) 2005-09-14 2005-09-14 光電変換素子及び固体撮像素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011173227A Division JP2011244010A (ja) 2011-08-08 2011-08-08 固体撮像素子

Publications (2)

Publication Number Publication Date
JP2007081137A true JP2007081137A (ja) 2007-03-29
JP2007081137A5 JP2007081137A5 (enExample) 2010-09-09

Family

ID=37854239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005267138A Pending JP2007081137A (ja) 2005-09-14 2005-09-14 光電変換素子及び固体撮像素子

Country Status (2)

Country Link
US (2) US7952156B2 (enExample)
JP (1) JP2007081137A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010075A (ja) * 2007-06-27 2009-01-15 Fujifilm Corp 放射線画像検出器
JP2010532869A (ja) * 2007-07-09 2010-10-14 ボリーメディアコミュニケーションズ（シンチェン）カンパニーリミテッド マルチスペクトルセンシング装置及びその製造方法
JP2012503315A (ja) * 2008-09-15 2012-02-02 ユニバーシティ オブ サザン カリフォルニア 有機へテロ接合点を含むスクアラインを含む有機感光性デバイスおよびその製造方法
WO2012132098A1 (ja) * 2011-03-28 2012-10-04 富士フイルム株式会社 固体撮像素子及び撮像装置
KR101327793B1 (ko) * 2007-10-08 2013-11-11 삼성전자주식회사 티오펜 유도체를 이용한 시모스 이미지 센서
US8817147B2 (en) 2011-07-28 2014-08-26 Sony Corporation Photoelectric conversion device, imaging apparatus, and solar cell
JP2015153780A (ja) * 2014-02-10 2015-08-24 富士フイルム株式会社 光電変換素子およびその使用方法、光センサ、撮像素子、化合物およびその製造方法
US9143713B2 (en) 2011-03-29 2015-09-22 Fujifilm Corporation Solid-state imaging device and imaging apparatus
KR101565931B1 (ko) 2008-11-03 2015-11-06 삼성전자주식회사 광전변환 필름, 이를 구비하는 광전변환 소자 및 이미지 센서
JP2017054939A (ja) * 2015-09-10 2017-03-16 株式会社東芝 有機光電変換素子、及び固体撮像素子
JP2020188269A (ja) * 2016-03-01 2020-11-19 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
JP2022009055A (ja) * 2015-05-19 2022-01-14 ソニーグループ株式会社 積層型撮像素子及び撮像装置

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347599A (ja) * 2004-06-04 2005-12-15 Fuji Photo Film Co Ltd カラー受光素子、及び撮像素子
JP2007081137A (ja) * 2005-09-14 2007-03-29 Fujifilm Corp 光電変換素子及び固体撮像素子
JP4677314B2 (ja) * 2005-09-20 2011-04-27 富士フイルム株式会社 センサーおよび有機光電変換素子の駆動方法
JP4403424B2 (ja) * 2006-11-30 2010-01-27 ソニー株式会社 固体撮像装置
KR20080101188A (ko) * 2007-05-16 2008-11-21 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP4852497B2 (ja) * 2007-08-27 2012-01-11 富士フイルム株式会社 固体撮像素子
JP5151375B2 (ja) * 2007-10-03 2013-02-27 ソニー株式会社 固体撮像装置およびその製造方法および撮像装置
US20100012175A1 (en) * 2008-07-16 2010-01-21 Emcore Solar Power, Inc. Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
US9287438B1 (en) * 2008-07-16 2016-03-15 Solaero Technologies Corp. Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation
US8587639B2 (en) * 2008-12-11 2013-11-19 Alcatel Lucent Method of improved three dimensional display technique
US8665363B2 (en) * 2009-01-21 2014-03-04 Sony Corporation Solid-state image device, method for producing the same, and image pickup apparatus
JP5609119B2 (ja) * 2009-01-21 2014-10-22 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
JP2011066204A (ja) * 2009-09-17 2011-03-31 Fujifilm Corp 固体撮像素子及びその製造方法並びに撮像装置
TWI565087B (zh) * 2011-07-01 2017-01-01 劉鴻達 具有光電轉換元件的裝置、陣列裝置及液晶顯示器
KR102093793B1 (ko) * 2011-10-31 2020-03-27 삼성전자주식회사 광 다이오드
US8941126B2 (en) * 2011-11-10 2015-01-27 Lei Guo Semiconductor electricity converter
US8785950B2 (en) * 2011-11-10 2014-07-22 Lei Guo Chip with semiconductor electricity conversion structure
CN102496649A (zh) 2011-11-10 2012-06-13 郭磊 一种半导体直流光电变压器
US9601538B2 (en) 2012-05-03 2017-03-21 Semiconductor Components Industries, Llc Image sensors with photoelectric films
EP2919278B1 (en) * 2012-11-06 2020-09-23 Sony Corporation Photoelectric conversion element, solid-state imaging device and electronic device
EP2926379A4 (en) * 2012-12-03 2016-07-20 Univ Akron ORGANIC POLYMER LIGHTING DEVICE WITH BROADBANDING RESPONSE AND INCREASED LIGHTINGABILITY
KR102095494B1 (ko) 2013-07-01 2020-03-31 삼성전자주식회사 씨모스 이미지 센서
KR102309883B1 (ko) * 2014-08-29 2021-10-06 삼성전자주식회사 광전 변환 소자 및 이를 포함하는 이미지 센서
JP6780421B2 (ja) * 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
CN108389875A (zh) * 2017-02-03 2018-08-10 松下知识产权经营株式会社 摄像装置
KR102881384B1 (ko) * 2017-06-21 2025-11-06 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상소자, 적층형 촬상소자 및 고체 촬상 장치
US10886336B2 (en) 2018-11-14 2021-01-05 Samsung Electronics Co., Ltd. Photoelectric conversion devices and organic sensors and electronic devices
KR20230057769A (ko) * 2021-10-22 2023-05-02 삼성전자주식회사 포토다이오드 및 이를 포함하는 전자 장치

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335544A (ja) * 1992-05-27 1993-12-17 Toshiba Corp 固体撮像装置
JPH06332200A (ja) * 1993-05-26 1994-12-02 Konica Corp 画像読み取り素子
JPH1152352A (ja) * 1997-07-30 1999-02-26 Toppan Printing Co Ltd 反射型液晶表示装置用カラーフィルタ基板
JP2002162474A (ja) * 2000-11-27 2002-06-07 Sharp Corp 電磁波検出器およびその製造方法
JP2003288993A (ja) * 2002-03-27 2003-10-10 Tokai Rubber Ind Ltd 有機エレクトロルミネッセンス素子用透明電極およびそれを用いてなる有機エレクトロルミネッセンス素子
JP2003332551A (ja) * 2002-05-08 2003-11-21 Canon Inc カラー撮像素子及びカラー受光素子
JP2004165242A (ja) * 2002-11-11 2004-06-10 Canon Inc カラー撮像素子及びカラー受光素子

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US37012A (en) * 1862-11-25 Improvement in horse-rakes
JPH02123768A (ja) * 1988-11-02 1990-05-11 Mitsubishi Electric Corp 有機半導体薄膜の製造方法および該薄膜を含む半導体デバイス
JPH0738136A (ja) 1993-07-23 1995-02-07 Sony Corp 受光素子
US6548956B2 (en) * 1994-12-13 2003-04-15 The Trustees Of Princeton University Transparent contacts for organic devices
US5923049A (en) * 1995-08-31 1999-07-13 Cohausz & Florack Trichromatic sensor
JPH10242492A (ja) * 1997-02-27 1998-09-11 Sanyo Electric Co Ltd 非晶質シリコンゲルマニウム薄膜の製造方法及び光起電力素子
JP4131031B2 (ja) * 1998-03-17 2008-08-13 ソニー株式会社 受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
JP3159171B2 (ja) * 1998-06-05 2001-04-23 日本電気株式会社 固体撮像装置
US6459450B2 (en) * 1998-06-24 2002-10-01 Intel Corporation Infrared filterless pixel structure
US6198091B1 (en) 1998-08-19 2001-03-06 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with a mixed electrical configuration
JP2001156321A (ja) * 1999-03-09 2001-06-08 Fuji Xerox Co Ltd 半導体装置およびその製造方法
JP4043135B2 (ja) * 1999-03-29 2008-02-06 株式会社東芝 機能素子および多成分多相系高分子成形体
US6727521B2 (en) * 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
US6545331B1 (en) * 1999-12-10 2003-04-08 Innotech Corporation Solid state imaging device, manufacturing method thereof, and solid state imaging apparatus
JP4278080B2 (ja) * 2000-09-27 2009-06-10 富士フイルム株式会社 高感度受光素子及びイメージセンサー
US6713796B1 (en) * 2001-01-19 2004-03-30 Dalsa, Inc. Isolated photodiode
US6750523B2 (en) * 2002-03-01 2004-06-15 Naos Convergent Technology, Inc. Photodiode stacks for photovoltaic relays and the method of manufacturing the same
JP3722367B2 (ja) * 2002-03-19 2005-11-30 ソニー株式会社 固体撮像素子の製造方法
US20040178463A1 (en) * 2002-03-20 2004-09-16 Foveon, Inc. Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group
JP2003298038A (ja) * 2002-04-05 2003-10-17 Canon Inc 光電変換素子及びそれを用いた固体撮像装置
US7129466B2 (en) * 2002-05-08 2006-10-31 Canon Kabushiki Kaisha Color image pickup device and color light-receiving device
US7247346B1 (en) * 2002-08-28 2007-07-24 Nanosolar, Inc. Combinatorial fabrication and high-throughput screening of optoelectronic devices
JPWO2004049458A1 (ja) * 2002-11-28 2006-03-30 新日本石油株式会社 光電変換素子
JP4075678B2 (ja) * 2003-05-06 2008-04-16 ソニー株式会社 固体撮像素子
JP2004356229A (ja) 2003-05-27 2004-12-16 Matsushita Electric Works Ltd 有機光電変換素子
JP2005032793A (ja) * 2003-07-08 2005-02-03 Matsushita Electric Ind Co Ltd 有機光電変換素子
US7213984B2 (en) * 2003-09-16 2007-05-08 Fujifilm Corporation Optical density-changing element, optical element and photographic unit
JP4581386B2 (ja) 2003-12-10 2010-11-17 ソニー株式会社 光電変換素子の製造方法、電子装置の製造方法および発光素子の製造方法
KR100541708B1 (ko) * 2004-02-05 2006-01-10 매그나칩 반도체 유한회사 이미지 센서 및 이의 제조 방법
US7570292B2 (en) * 2004-03-19 2009-08-04 Fujifilm Corporation Photoelectric conversion film, photoelectric conversion element, imaging element, method of applying electric field thereto and electric field-applied element
JP2005268609A (ja) * 2004-03-19 2005-09-29 Fuji Photo Film Co Ltd 多層積層型多画素撮像素子及びテレビカメラ
US7419314B2 (en) * 2004-05-19 2008-09-02 Fujifilm Corporation Optical density changing element, optical element and photographing unit
US7202504B2 (en) * 2004-05-20 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and display device
US7268369B2 (en) * 2004-07-06 2007-09-11 Fujifilm Corporation Functional device and method for producing the same
US7410906B2 (en) * 2004-07-16 2008-08-12 Fujifilm Corporation Functional device and method for producing the same, and image pickup device and method for producing the same
US7291515B2 (en) * 2004-07-16 2007-11-06 Fujifilm Corporation Functional device and method for producing the same
WO2006013990A1 (en) * 2004-08-03 2006-02-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light-emitting device
JP4779320B2 (ja) * 2004-08-10 2011-09-28 ソニー株式会社 固体撮像装置およびその製造方法
TWI270242B (en) * 2004-11-05 2007-01-01 Ind Tech Res Inst Magnetic field enhanced photovoltaic devices
US7259405B2 (en) * 2004-11-23 2007-08-21 Au Optronics Corporation Organic photoelectric device with improved electron transport efficiency
JP4843951B2 (ja) * 2005-01-27 2011-12-21 ソニー株式会社 固体撮像装置の製造方法、固体撮像装置およびカメラ
JP2007012982A (ja) 2005-07-01 2007-01-18 Konica Minolta Medical & Graphic Inc 光電変換素子、放射線画像検出器及び放射線画像撮影システム
US20070045520A1 (en) * 2005-08-23 2007-03-01 Fuji Photo Film Co., Ltd. Photoelectric conversion device and imaging device
JP2007081137A (ja) * 2005-09-14 2007-03-29 Fujifilm Corp 光電変換素子及び固体撮像素子
KR100890862B1 (ko) * 2005-11-07 2009-03-27 주식회사 엘지화학 유기 발광 소자 및 이의 제조 방법
KR100732773B1 (ko) * 2006-06-29 2007-06-27 주식회사 하이닉스반도체 절연층들간의 들뜸을 방지한 반도체 소자 제조 방법
US7724796B2 (en) * 2006-08-29 2010-05-25 The Trustees Of Princeton University Organic laser
JP4637196B2 (ja) * 2007-03-16 2011-02-23 富士フイルム株式会社 固体撮像素子
JP5460118B2 (ja) * 2008-05-14 2014-04-02 富士フイルム株式会社 光電変換素子、及び撮像素子

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335544A (ja) * 1992-05-27 1993-12-17 Toshiba Corp 固体撮像装置
JPH06332200A (ja) * 1993-05-26 1994-12-02 Konica Corp 画像読み取り素子
JPH1152352A (ja) * 1997-07-30 1999-02-26 Toppan Printing Co Ltd 反射型液晶表示装置用カラーフィルタ基板
JP2002162474A (ja) * 2000-11-27 2002-06-07 Sharp Corp 電磁波検出器およびその製造方法
JP2003288993A (ja) * 2002-03-27 2003-10-10 Tokai Rubber Ind Ltd 有機エレクトロルミネッセンス素子用透明電極およびそれを用いてなる有機エレクトロルミネッセンス素子
JP2003332551A (ja) * 2002-05-08 2003-11-21 Canon Inc カラー撮像素子及びカラー受光素子
JP2004165242A (ja) * 2002-11-11 2004-06-10 Canon Inc カラー撮像素子及びカラー受光素子

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010075A (ja) * 2007-06-27 2009-01-15 Fujifilm Corp 放射線画像検出器
JP2010532869A (ja) * 2007-07-09 2010-10-14 ボリーメディアコミュニケーションズ（シンチェン）カンパニーリミテッド マルチスペクトルセンシング装置及びその製造方法
KR101327793B1 (ko) * 2007-10-08 2013-11-11 삼성전자주식회사 티오펜 유도체를 이용한 시모스 이미지 센서
JP2012503315A (ja) * 2008-09-15 2012-02-02 ユニバーシティ オブ サザン カリフォルニア 有機へテロ接合点を含むスクアラインを含む有機感光性デバイスおよびその製造方法
KR101565931B1 (ko) 2008-11-03 2015-11-06 삼성전자주식회사 광전변환 필름, 이를 구비하는 광전변환 소자 및 이미지 센서
WO2012132098A1 (ja) * 2011-03-28 2012-10-04 富士フイルム株式会社 固体撮像素子及び撮像装置
JP2012216739A (ja) * 2011-03-28 2012-11-08 Fujifilm Corp 固体撮像素子及び撮像装置
US8953078B2 (en) 2011-03-28 2015-02-10 Fujifilm Corporation Solid-state imaging device and imaging apparatus
US9143713B2 (en) 2011-03-29 2015-09-22 Fujifilm Corporation Solid-state imaging device and imaging apparatus
US8817147B2 (en) 2011-07-28 2014-08-26 Sony Corporation Photoelectric conversion device, imaging apparatus, and solar cell
JP2015153780A (ja) * 2014-02-10 2015-08-24 富士フイルム株式会社 光電変換素子およびその使用方法、光センサ、撮像素子、化合物およびその製造方法
JP2022009055A (ja) * 2015-05-19 2022-01-14 ソニーグループ株式会社 積層型撮像素子及び撮像装置
JP7302639B2 (ja) 2015-05-19 2023-07-04 ソニーグループ株式会社 積層型撮像素子及び撮像装置
JP2017054939A (ja) * 2015-09-10 2017-03-16 株式会社東芝 有機光電変換素子、及び固体撮像素子
JP2020188269A (ja) * 2016-03-01 2020-11-19 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
JP6992851B2 (ja) 2016-03-01 2022-01-13 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法

Also Published As

Publication number Publication date
US8436441B2 (en) 2013-05-07
US20070057339A1 (en) 2007-03-15
US7952156B2 (en) 2011-05-31
US20110233701A1 (en) 2011-09-29

Similar Documents

Publication Publication Date Title
JP2007081137A (ja) 光電変換素子及び固体撮像素子
JP5227511B2 (ja) 光電変換素子及び固体撮像素子
JP5108339B2 (ja) 固体撮像素子
US7999339B2 (en) Photoelectric conversion device and solid-state imaging device
JP4911445B2 (ja) 有機と無機のハイブリッド光電変換素子
JP5087304B2 (ja) 固体撮像素子の製造方法
US20140239156A1 (en) Photoelectric conversion element and solid-state image pickup device
US20070120045A1 (en) Organic photoelectric conversion device and stack type photoelectric conversion device
JP4961111B2 (ja) 光電変換膜積層型固体撮像素子とその製造方法
JP2005303266A (ja) 撮像素子、その電場印加方法および印加した素子
JP4719597B2 (ja) 光電変換素子及び固体撮像素子
JP2006270021A (ja) 積層型光電変換素子
JP2012019235A (ja) 固体撮像素子
JP2012169676A (ja) 固体撮像素子
JP2007059516A (ja) 光電変換素子、撮像素子、および該光電変換素子の製造方法
JP2011233908A (ja) 光電変換素子及び撮像素子
JP2007234650A (ja) 光電変換素子及び固体撮像素子
JP5492939B2 (ja) 固体撮像素子の製造方法
JP2011244010A (ja) 固体撮像素子
JP5469918B2 (ja) 光電変換素子の製造方法、光電変換素子、及び撮像素子
JP2012160770A (ja) 固体撮像素子
JP2012009910A (ja) 固体撮像素子
JP2007080936A (ja) 光電変換素子及び固体撮像素子
JP2006237351A (ja) 光電変換膜、光電変換素子及び光電変換膜の製造方法
JP2008004899A (ja) 固体撮像装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070116

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071109

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071116

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071126

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080208

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100726

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20100726

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20100812

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100824

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101018

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110204

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110510

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20110707

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110808