JP2011066204A - 固体撮像素子及びその製造方法並びに撮像装置 - Google Patents
固体撮像素子及びその製造方法並びに撮像装置 Download PDFInfo
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- JP2011066204A JP2011066204A JP2009215607A JP2009215607A JP2011066204A JP 2011066204 A JP2011066204 A JP 2011066204A JP 2009215607 A JP2009215607 A JP 2009215607A JP 2009215607 A JP2009215607 A JP 2009215607A JP 2011066204 A JP2011066204 A JP 2011066204A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 59
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
Abstract
【解決手段】半導体基板110に二次元アレイ状に配列形成される複数の画素と、各画素上に積層されるカラーフィルタとを有する固体撮像素子であって、前記各画素を構成する各々の光電変換領域50r,50g,50bの深さが前記カラーフィルタの色にかかわらず同一に形成され該光電変換領域50r,50g,50bの浅部と深部の夫々の幅が前記カラーフィルタの色によって異なる。
【選択図】図4
Description
50g G画素の光電変換領域
50b B画素の光電変換領域
51r,51g,51b 浅部領域
52r,52g,52b 中間領域
53r,53g,53b 深部領域
100 固体撮像素子
101 画素
Claims (6)
- 半導体基板に二次元アレイ状に配列形成される複数の画素と、各画素上に積層されるカラーフィルタとを有する固体撮像素子であって、前記各画素を構成する各々の光電変換領域の深さが前記カラーフィルタの色にかかわらず同一に形成され該光電変換領域の浅部と深部の夫々の幅が前記カラーフィルタの色によって異なる固体撮像素子。
- 請求項1に記載の固体撮像素子であって、前記カラーフィルタが原色系カラーフィルタであり、赤色フィルタが積層された前記光電変換領域の深部の幅を広く青色フィルタが積層された前記光電変換領域の深部の幅を狭く形成した固体撮像素子。
- 請求項1又は請求項2に記載の固体撮像素子であって、前記カラーフィルタが原色系カラーフィルタであり、赤色フィルタが積層された前記光電変換領域の深部の幅を浅部の幅より幅広に形成し、青色フィルタが積層された前記光電変換領域の深部の幅より浅部の幅を幅広に形成し、緑色フィルタが積層された前記光電変換領域の深部と浅部の中間領域の幅を該深部及び浅部の幅より幅広に形成した固体撮像素子。
- 請求項1乃至請求項3のいずれかに記載の固体撮像素子であって、隣接する2つの前記光電変換領域の間に形成される素子分離領域の幅が前記半導体基板の深さ方向で略同一となる固体撮像素子。
- 請求項1乃至請求項4のいずれかに記載の固体撮像素子の製造方法であって、前記光電変換領域の前記幅の縮小部分,拡大部分は、該光電変換領域を形成するイオン注入工程における注入範囲を変えることで形成する固体撮像素子の製造方法。
- 請求項1乃至請求項4のいずれかに記載の固体撮像素子と、該固体撮像素子を駆動する駆動手段と、該固体撮像素子から出力される撮像画像信号を処理する信号処理手段とを備える撮像装置。
Priority Applications (2)
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JP2009215607A JP2011066204A (ja) | 2009-09-17 | 2009-09-17 | 固体撮像素子及びその製造方法並びに撮像装置 |
US12/874,056 US8493481B2 (en) | 2009-09-17 | 2010-09-01 | Solid-state imaging device, manufacturing method for solid-state imaging device, and imaging apparatus |
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JP2009215607A JP2011066204A (ja) | 2009-09-17 | 2009-09-17 | 固体撮像素子及びその製造方法並びに撮像装置 |
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JP2011066204A true JP2011066204A (ja) | 2011-03-31 |
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JP2009215607A Abandoned JP2011066204A (ja) | 2009-09-17 | 2009-09-17 | 固体撮像素子及びその製造方法並びに撮像装置 |
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JP (1) | JP2011066204A (ja) |
Cited By (2)
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JP2021100136A (ja) * | 2019-04-26 | 2021-07-01 | ソニーグループ株式会社 | 固体撮像装置、および電子機器 |
US11569286B2 (en) | 2013-05-24 | 2023-01-31 | Sony Corporation | Solid-state imaging device and electronic apparatus |
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WO2021062662A1 (zh) * | 2019-09-30 | 2021-04-08 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
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JPH0463473A (ja) * | 1990-07-03 | 1992-02-28 | Toshiba Corp | 固体撮像装置 |
JP2003086783A (ja) * | 2001-09-12 | 2003-03-20 | Sony Corp | 固体撮像素子及びその製造方法 |
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JP2006135252A (ja) | 2004-11-09 | 2006-05-25 | Renesas Technology Corp | 固体撮像素子 |
JP2006310343A (ja) | 2005-04-26 | 2006-11-09 | Matsushita Electric Ind Co Ltd | カラー固体撮像装置 |
JP4852945B2 (ja) | 2005-09-13 | 2012-01-11 | ソニー株式会社 | 固体撮像素子 |
JP2007081137A (ja) * | 2005-09-14 | 2007-03-29 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
KR101152389B1 (ko) * | 2007-09-13 | 2012-06-05 | 삼성전자주식회사 | 이미지 센서와 그 제조 방법 |
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2009
- 2009-09-17 JP JP2009215607A patent/JP2011066204A/ja not_active Abandoned
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2010
- 2010-09-01 US US12/874,056 patent/US8493481B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0463473A (ja) * | 1990-07-03 | 1992-02-28 | Toshiba Corp | 固体撮像装置 |
JP2003086783A (ja) * | 2001-09-12 | 2003-03-20 | Sony Corp | 固体撮像素子及びその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11569286B2 (en) | 2013-05-24 | 2023-01-31 | Sony Corporation | Solid-state imaging device and electronic apparatus |
US11894406B2 (en) | 2013-05-24 | 2024-02-06 | Sony Group Corporation | Solid-state imaging device and electronic apparatus |
JP2021100136A (ja) * | 2019-04-26 | 2021-07-01 | ソニーグループ株式会社 | 固体撮像装置、および電子機器 |
JP7180706B2 (ja) | 2019-04-26 | 2022-11-30 | ソニーグループ株式会社 | 固体撮像装置、および電子機器 |
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US20110063467A1 (en) | 2011-03-17 |
US8493481B2 (en) | 2013-07-23 |
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