JP2007036211A5 - - Google Patents

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Publication number
JP2007036211A5
JP2007036211A5 JP2006169083A JP2006169083A JP2007036211A5 JP 2007036211 A5 JP2007036211 A5 JP 2007036211A5 JP 2006169083 A JP2006169083 A JP 2006169083A JP 2006169083 A JP2006169083 A JP 2006169083A JP 2007036211 A5 JP2007036211 A5 JP 2007036211A5
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JP
Japan
Prior art keywords
main surface
layer
conductivity type
film
semiconductor element
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Pending
Application number
JP2006169083A
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English (en)
Japanese (ja)
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JP2007036211A (ja
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Publication date
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Priority to JP2006169083A priority Critical patent/JP2007036211A/ja
Priority claimed from JP2006169083A external-priority patent/JP2007036211A/ja
Publication of JP2007036211A publication Critical patent/JP2007036211A/ja
Publication of JP2007036211A5 publication Critical patent/JP2007036211A5/ja
Pending legal-status Critical Current

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JP2006169083A 2005-06-20 2006-06-19 半導体素子の製造方法 Pending JP2007036211A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006169083A JP2007036211A (ja) 2005-06-20 2006-06-19 半導体素子の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005179720 2005-06-20
JP2006169083A JP2007036211A (ja) 2005-06-20 2006-06-19 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JP2007036211A JP2007036211A (ja) 2007-02-08
JP2007036211A5 true JP2007036211A5 (enrdf_load_stackoverflow) 2010-04-08

Family

ID=37795026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006169083A Pending JP2007036211A (ja) 2005-06-20 2006-06-19 半導体素子の製造方法

Country Status (1)

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JP (1) JP2007036211A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009122486A1 (ja) * 2008-03-31 2009-10-08 三菱電機株式会社 半導体装置
JPWO2010109572A1 (ja) 2009-03-23 2012-09-20 トヨタ自動車株式会社 半導体装置
JP5707709B2 (ja) 2009-03-23 2015-04-30 富士電機株式会社 半導体装置の製造方法
JP5600985B2 (ja) * 2010-03-24 2014-10-08 三菱電機株式会社 電力半導体装置の製造方法
JP5545000B2 (ja) 2010-04-14 2014-07-09 富士電機株式会社 半導体装置の製造方法
US8748236B2 (en) * 2010-11-10 2014-06-10 Toyota Jidosha Kabushiki Kaisha Method for manufacturing semiconductor device
DE112013002516T5 (de) 2012-05-15 2015-02-19 Fuji Electric Co., Ltd. Halbleitervorrichtung
WO2015045617A1 (ja) 2013-09-27 2015-04-02 富士電機株式会社 半導体装置の製造方法
JP6191587B2 (ja) 2014-12-08 2017-09-06 トヨタ自動車株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
JP3339552B2 (ja) * 1996-11-27 2002-10-28 株式会社日立製作所 半導体装置及びその製造方法
JP2001135814A (ja) * 1999-11-02 2001-05-18 Shindengen Electric Mfg Co Ltd 縦型ｍｏｓ電界効果トランジスタ
JP4023773B2 (ja) * 2001-03-30 2007-12-19 株式会社東芝 高耐圧半導体装置
JP2004119498A (ja) * 2002-09-24 2004-04-15 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP4049035B2 (ja) * 2003-06-27 2008-02-20 株式会社デンソー 半導体装置の製造方法
JP4221012B2 (ja) * 2006-06-12 2009-02-12 トヨタ自動車株式会社 半導体装置とその製造方法

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