JP2007243143A5 - - Google Patents
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- Publication number
- JP2007243143A5 JP2007243143A5 JP2006289909A JP2006289909A JP2007243143A5 JP 2007243143 A5 JP2007243143 A5 JP 2007243143A5 JP 2006289909 A JP2006289909 A JP 2006289909A JP 2006289909 A JP2006289909 A JP 2006289909A JP 2007243143 A5 JP2007243143 A5 JP 2007243143A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- alloy layer
- tiw alloy
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 claims 24
- 239000004065 semiconductor Substances 0.000 claims 20
- 239000000956 alloy Substances 0.000 claims 12
- 229910045601 alloy Inorganic materials 0.000 claims 12
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 4
- 229910002601 GaN Inorganic materials 0.000 claims 3
- -1 gallium nitride compound Chemical class 0.000 claims 3
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006289909A JP4984821B2 (ja) | 2005-04-08 | 2006-10-25 | 半導体素子およびその製造方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005112610 | 2005-04-08 | ||
| JP2005112610 | 2005-04-08 | ||
| JP2006031741 | 2006-02-08 | ||
| JP2006031741 | 2006-02-08 | ||
| JP2006289909A JP4984821B2 (ja) | 2005-04-08 | 2006-10-25 | 半導体素子およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006539766A Division JP3949157B2 (ja) | 2005-04-08 | 2006-04-04 | 半導体素子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007243143A JP2007243143A (ja) | 2007-09-20 |
| JP2007243143A5 true JP2007243143A5 (enrdf_load_stackoverflow) | 2009-04-23 |
| JP4984821B2 JP4984821B2 (ja) | 2012-07-25 |
Family
ID=38588335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006289909A Active JP4984821B2 (ja) | 2005-04-08 | 2006-10-25 | 半導体素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4984821B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101026059B1 (ko) | 2007-12-21 | 2011-04-04 | 삼성엘이디 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| WO2013011864A1 (ja) | 2011-07-15 | 2013-01-24 | 株式会社村田製作所 | 薄膜デバイスおよび薄膜デバイスの製造方法 |
| CN111128710A (zh) * | 2020-01-15 | 2020-05-08 | 桂林理工大学 | GaN HEMT无金低粗糙度欧姆接触电极的制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05295531A (ja) * | 1992-04-21 | 1993-11-09 | Toshiba Corp | Ｔｉ−Ｗ系スパッタリングターゲットおよびその製造方法 |
| JP4463482B2 (ja) * | 2002-07-11 | 2010-05-19 | パナソニック株式会社 | Ｍｉｓｆｅｔ及びその製造方法 |
| JP2004319595A (ja) * | 2003-04-11 | 2004-11-11 | Calsonic Kansei Corp | Ｌｅｄ照明装置 |
| JP4635418B2 (ja) * | 2003-07-31 | 2011-02-23 | 日亜化学工業株式会社 | 半導体装置の製造方法及び半導体装置 |
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2006
- 2006-10-25 JP JP2006289909A patent/JP4984821B2/ja active Active