JP4984821B2 - 半導体素子およびその製造方法 - Google Patents
半導体素子およびその製造方法 Download PDFInfo
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- JP4984821B2 JP4984821B2 JP2006289909A JP2006289909A JP4984821B2 JP 4984821 B2 JP4984821 B2 JP 4984821B2 JP 2006289909 A JP2006289909 A JP 2006289909A JP 2006289909 A JP2006289909 A JP 2006289909A JP 4984821 B2 JP4984821 B2 JP 4984821B2
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- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 113
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010410 layer Substances 0.000 claims description 242
- 239000000956 alloy Substances 0.000 claims description 90
- 229910045601 alloy Inorganic materials 0.000 claims description 90
- 229910002601 GaN Inorganic materials 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 22
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 10
- -1 gallium nitride compound Chemical class 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 239000000523 sample Substances 0.000 description 46
- 239000010936 titanium Substances 0.000 description 42
- 238000010438 heat treatment Methods 0.000 description 31
- 239000000758 substrate Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 239000010948 rhodium Substances 0.000 description 5
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 238000001552 radio frequency sputter deposition Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012854 evaluation process Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006289909A JP4984821B2 (ja) | 2005-04-08 | 2006-10-25 | 半導体素子およびその製造方法 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005112610 | 2005-04-08 | ||
| JP2005112610 | 2005-04-08 | ||
| JP2006031741 | 2006-02-08 | ||
| JP2006031741 | 2006-02-08 | ||
| JP2006289909A JP4984821B2 (ja) | 2005-04-08 | 2006-10-25 | 半導体素子およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006539766A Division JP3949157B2 (ja) | 2005-04-08 | 2006-04-04 | 半導体素子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007243143A JP2007243143A (ja) | 2007-09-20 |
| JP2007243143A5 JP2007243143A5 (enrdf_load_stackoverflow) | 2009-04-23 |
| JP4984821B2 true JP4984821B2 (ja) | 2012-07-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006289909A Active JP4984821B2 (ja) | 2005-04-08 | 2006-10-25 | 半導体素子およびその製造方法 |
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| JP (1) | JP4984821B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101026059B1 (ko) | 2007-12-21 | 2011-04-04 | 삼성엘이디 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| WO2013011864A1 (ja) | 2011-07-15 | 2013-01-24 | 株式会社村田製作所 | 薄膜デバイスおよび薄膜デバイスの製造方法 |
| CN111128710A (zh) * | 2020-01-15 | 2020-05-08 | 桂林理工大学 | GaN HEMT无金低粗糙度欧姆接触电极的制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05295531A (ja) * | 1992-04-21 | 1993-11-09 | Toshiba Corp | Ｔｉ−Ｗ系スパッタリングターゲットおよびその製造方法 |
| JP4463482B2 (ja) * | 2002-07-11 | 2010-05-19 | パナソニック株式会社 | Ｍｉｓｆｅｔ及びその製造方法 |
| JP2004319595A (ja) * | 2003-04-11 | 2004-11-11 | Calsonic Kansei Corp | Ｌｅｄ照明装置 |
| JP4635418B2 (ja) * | 2003-07-31 | 2011-02-23 | 日亜化学工業株式会社 | 半導体装置の製造方法及び半導体装置 |
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| JP2007243143A (ja) | 2007-09-20 |
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