JP2007036211A - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法 Download PDF

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Publication number
JP2007036211A
JP2007036211A JP2006169083A JP2006169083A JP2007036211A JP 2007036211 A JP2007036211 A JP 2007036211A JP 2006169083 A JP2006169083 A JP 2006169083A JP 2006169083 A JP2006169083 A JP 2006169083A JP 2007036211 A JP2007036211 A JP 2007036211A
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Japan
Prior art keywords
aluminum
manufacturing
film
layer
main surface
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Pending
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JP2006169083A
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English (en)
Japanese (ja)
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JP2007036211A5 (enrdf_load_stackoverflow
Inventor
Kenichi Kazama
健一 風間
Tsunehiro Nakajima
経宏 中嶋
Koji Sasaki
弘次 佐々木
Akio Shimizu
明夫 清水
Takashi Hayashi
崇 林
Hiroki Wakimoto
博樹 脇本
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Fuji Electric Co Ltd
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Fuji Electric Device Technology Co Ltd
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Application filed by Fuji Electric Device Technology Co Ltd filed Critical Fuji Electric Device Technology Co Ltd
Priority to JP2006169083A priority Critical patent/JP2007036211A/ja
Publication of JP2007036211A publication Critical patent/JP2007036211A/ja
Publication of JP2007036211A5 publication Critical patent/JP2007036211A5/ja
Pending legal-status Critical Current

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JP2006169083A 2005-06-20 2006-06-19 半導体素子の製造方法 Pending JP2007036211A (ja)

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JP2006169083A JP2007036211A (ja) 2005-06-20 2006-06-19 半導体素子の製造方法

Applications Claiming Priority (2)

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JP2005179720 2005-06-20
JP2006169083A JP2007036211A (ja) 2005-06-20 2006-06-19 半導体素子の製造方法

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JP2007036211A true JP2007036211A (ja) 2007-02-08
JP2007036211A5 JP2007036211A5 (enrdf_load_stackoverflow) 2010-04-08

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009122486A1 (ja) * 2008-03-31 2009-10-08 三菱電機株式会社 半導体装置
WO2010109572A1 (ja) * 2009-03-23 2010-09-30 トヨタ自動車株式会社 半導体装置
JP2011204716A (ja) * 2010-03-24 2011-10-13 Mitsubishi Electric Corp 電力半導体装置およびその製造方法
US8198104B2 (en) 2009-03-23 2012-06-12 Fuji Electric Co., Ltd. Method of manufacturing a semiconductor device
US8492256B2 (en) 2010-04-14 2013-07-23 Fuji Electric Co., Ltd. Method of manufacturing semiconductor apparatus
JPWO2012063342A1 (ja) * 2010-11-10 2014-05-12 トヨタ自動車株式会社 半導体装置の製造方法
US9070736B2 (en) 2012-05-15 2015-06-30 Fuji Electric Co., Ltd. Semiconductor device
US9666437B2 (en) 2013-09-27 2017-05-30 Fuji Electric Co., Ltd. Method for manufacturing semiconductor device
US9691870B2 (en) 2014-12-08 2017-06-27 Toyota Jidosha Kabushiki Kaisha Semiconductor device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07307469A (ja) * 1994-03-14 1995-11-21 Toshiba Corp 半導体装置
JPH10163467A (ja) * 1996-11-27 1998-06-19 Hitachi Ltd 半導体装置及び電極形成方法
JP2001135814A (ja) * 1999-11-02 2001-05-18 Shindengen Electric Mfg Co Ltd 縦型ｍｏｓ電界効果トランジスタ
JP2002299623A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 高耐圧半導体装置
JP2004119498A (ja) * 2002-09-24 2004-04-15 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP2005019830A (ja) * 2003-06-27 2005-01-20 Denso Corp 半導体装置の製造方法
JP2007335431A (ja) * 2006-06-12 2007-12-27 Toyota Motor Corp 半導体装置とその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07307469A (ja) * 1994-03-14 1995-11-21 Toshiba Corp 半導体装置
JPH10163467A (ja) * 1996-11-27 1998-06-19 Hitachi Ltd 半導体装置及び電極形成方法
JP2001135814A (ja) * 1999-11-02 2001-05-18 Shindengen Electric Mfg Co Ltd 縦型ｍｏｓ電界効果トランジスタ
JP2002299623A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 高耐圧半導体装置
JP2004119498A (ja) * 2002-09-24 2004-04-15 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP2005019830A (ja) * 2003-06-27 2005-01-20 Denso Corp 半導体装置の製造方法
JP2007335431A (ja) * 2006-06-12 2007-12-27 Toyota Motor Corp 半導体装置とその製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101191281B1 (ko) 2008-03-31 2012-10-16 미쓰비시덴키 가부시키가이샤 반도체장치
US8829564B2 (en) 2008-03-31 2014-09-09 Mitsubishi Electric Corporation Semiconductor device including an IGBT
JPWO2009122486A1 (ja) * 2008-03-31 2011-07-28 三菱電機株式会社 半導体装置
US8507945B2 (en) 2008-03-31 2013-08-13 Mitsubishi Electric Corporation Semiconductor device including an insulated gate bipolar transistor (IGBT)
WO2009122486A1 (ja) * 2008-03-31 2009-10-08 三菱電機株式会社 半導体装置
KR101198289B1 (ko) 2008-03-31 2012-11-07 미쓰비시덴키 가부시키가이샤 반도체장치
US8198104B2 (en) 2009-03-23 2012-06-12 Fuji Electric Co., Ltd. Method of manufacturing a semiconductor device
JPWO2010109572A1 (ja) * 2009-03-23 2012-09-20 トヨタ自動車株式会社 半導体装置
US8558381B2 (en) 2009-03-23 2013-10-15 Toyota Jidosha Kabushiki Kaisha Semiconductor device
WO2010109572A1 (ja) * 2009-03-23 2010-09-30 トヨタ自動車株式会社 半導体装置
JP2011204716A (ja) * 2010-03-24 2011-10-13 Mitsubishi Electric Corp 電力半導体装置およびその製造方法
US8492256B2 (en) 2010-04-14 2013-07-23 Fuji Electric Co., Ltd. Method of manufacturing semiconductor apparatus
JPWO2012063342A1 (ja) * 2010-11-10 2014-05-12 トヨタ自動車株式会社 半導体装置の製造方法
US9070736B2 (en) 2012-05-15 2015-06-30 Fuji Electric Co., Ltd. Semiconductor device
JPWO2013172394A1 (ja) * 2012-05-15 2016-01-12 富士電機株式会社 半導体装置
US9666437B2 (en) 2013-09-27 2017-05-30 Fuji Electric Co., Ltd. Method for manufacturing semiconductor device
US9691870B2 (en) 2014-12-08 2017-06-27 Toyota Jidosha Kabushiki Kaisha Semiconductor device

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