JP2007036129A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2007036129A
JP2007036129A JP2005221107A JP2005221107A JP2007036129A JP 2007036129 A JP2007036129 A JP 2007036129A JP 2005221107 A JP2005221107 A JP 2005221107A JP 2005221107 A JP2005221107 A JP 2005221107A JP 2007036129 A JP2007036129 A JP 2007036129A
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JP
Japan
Prior art keywords
wafer
passivation film
manufacturing
main surface
semiconductor device
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Pending
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JP2005221107A
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English (en)
Japanese (ja)
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JP2007036129A5 (enExample
Inventor
Hiroyuki Hiyakunou
寛之 百濃
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2005221107A priority Critical patent/JP2007036129A/ja
Publication of JP2007036129A publication Critical patent/JP2007036129A/ja
Publication of JP2007036129A5 publication Critical patent/JP2007036129A5/ja
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  • Mechanical Treatment Of Semiconductor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005221107A 2005-07-29 2005-07-29 半導体装置の製造方法 Pending JP2007036129A (ja)

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JP2005221107A JP2007036129A (ja) 2005-07-29 2005-07-29 半導体装置の製造方法

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JP2005221107A JP2007036129A (ja) 2005-07-29 2005-07-29 半導体装置の製造方法

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JP2007036129A true JP2007036129A (ja) 2007-02-08
JP2007036129A5 JP2007036129A5 (enExample) 2008-08-21

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JP2005221107A Pending JP2007036129A (ja) 2005-07-29 2005-07-29 半導体装置の製造方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007214268A (ja) * 2006-02-08 2007-08-23 Seiko Instruments Inc 半導体装置の製造方法
WO2012039403A1 (ja) * 2010-09-22 2012-03-29 富士電機株式会社 半導体装置の製造方法
JP2014138143A (ja) * 2013-01-18 2014-07-28 Toyota Motor Corp 半導体装置の製造方法、半導体ウエハ、及び、半導体装置
US9786630B2 (en) 2015-12-24 2017-10-10 Renesas Electronics Corporation Semiconductor device manufacturing method and semiconductor wafer
EP3346503A1 (en) 2017-01-10 2018-07-11 Renesas Electronics Corporation Semiconductor device manufacturing method and semiconductor wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05315304A (ja) * 1992-05-12 1993-11-26 Sony Corp ウエハの裏面研削方法
JPH10312980A (ja) * 1997-05-13 1998-11-24 Sony Corp 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05315304A (ja) * 1992-05-12 1993-11-26 Sony Corp ウエハの裏面研削方法
JPH10312980A (ja) * 1997-05-13 1998-11-24 Sony Corp 半導体装置の製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007214268A (ja) * 2006-02-08 2007-08-23 Seiko Instruments Inc 半導体装置の製造方法
WO2012039403A1 (ja) * 2010-09-22 2012-03-29 富士電機株式会社 半導体装置の製造方法
CN103069546A (zh) * 2010-09-22 2013-04-24 富士电机株式会社 半导体器件的制造方法
US8865567B2 (en) 2010-09-22 2014-10-21 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device
JP5609981B2 (ja) * 2010-09-22 2014-10-22 富士電機株式会社 半導体装置の製造方法
JP2014138143A (ja) * 2013-01-18 2014-07-28 Toyota Motor Corp 半導体装置の製造方法、半導体ウエハ、及び、半導体装置
US9214522B2 (en) 2013-01-18 2015-12-15 Toyota Jidosha Kabushiki Kaisha Production method of semiconductor device, semiconductor wafer, and semiconductor device
US9786630B2 (en) 2015-12-24 2017-10-10 Renesas Electronics Corporation Semiconductor device manufacturing method and semiconductor wafer
EP3346503A1 (en) 2017-01-10 2018-07-11 Renesas Electronics Corporation Semiconductor device manufacturing method and semiconductor wafer
KR20180082334A (ko) 2017-01-10 2018-07-18 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치의 제조 방법 및 반도체 웨이퍼
US10741504B2 (en) 2017-01-10 2020-08-11 Renesas Electronics Corporation Semiconductor device manufacturing method and semiconductor wafer
KR102481682B1 (ko) 2017-01-10 2022-12-28 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치의 제조 방법 및 반도체 웨이퍼

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