TWI619158B - Device wafer processing method - Google Patents
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- TWI619158B TWI619158B TW103126589A TW103126589A TWI619158B TW I619158 B TWI619158 B TW I619158B TW 103126589 A TW103126589 A TW 103126589A TW 103126589 A TW103126589 A TW 103126589A TW I619158 B TWI619158 B TW I619158B
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- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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Abstract
本發明之課題為提供一種可將使裝置損傷或使其發生裝置不良的疑慮降低的裝置晶圓之加工方法。解決手段為一種裝置晶圓之加工方法,是表面具備形成有複數個裝置的裝置區域和圍繞該裝置區域的外周剩餘區域,並且該各裝置具有用於抗拒往黏著膠帶接著之抗接著區域的裝置晶圓之加工方法,特徵在於,其包含,在裝置晶圓的表面黏貼紫外線硬化型表面保護膠帶的保護膠帶黏貼步驟、在實施該保護膠帶黏貼步驟之前或之後,至少在對應於該抗接著區域的該紫外線硬化型表面保護膠帶的區域照射紫外線以使其接著力降低,同時至少在該外周剩餘區域不照射紫外線以使其接著力殘存的紫外線照射步驟,以及在實施過該保護膠帶黏貼步驟和該紫外線照射步驟後,透過該紫外線硬化型表面保護膠帶保持裝置晶圓,並對裝置晶圓之背面進行磨削的磨削步驟。
Description
本發明是有關於一種裝置晶圓之加工方法,該裝置晶圓具備具有抗拒往黏著膠帶接著之抗接著區域的裝置。
在半導體裝置製造程序中,在大致呈圓板形狀的矽(silicon)晶圓、砷化鎵(gallium arsenide)晶圓等半導體晶圓的表面上會以形成格子狀之被稱為切割道(street)的分割預定線劃分成複數個區域,並在這些被劃分的各區域中形成IC、LSI等裝置。
這種半導體晶圓以磨削裝置磨削背面而被加工成預定的厚度後,可透過切削裝置或雷射加工裝置而被分割成一個個的裝置,而所分割出來的裝置則被廣泛地應用在手機、電腦等各種電子機器上。
在磨削半導體晶圓的背面之前,為了保護形成在半導體晶圓表面的裝置,會在晶圓表面黏貼表面保護膠帶。在磨削裝置的夾頭台上可透過表面保護膠帶吸引保持半導體晶圓,並實施晶圓背面的磨削。
專利文獻1:日本專利特開2006-303051號公報
然而,由於MEMS(Micro Electro Mechanical Systems)晶圓在各裝置上形成有微小構造體,當要進行背面磨削時為了保護裝置而在裝置表面貼上表面保護膠帶後,在進行表面保護膠帶之剝離時恐怕會有造成裝置的構造體破損之疑慮。
又,表面形成有CMOS和CCD等的攝像裝置的攝像裝置晶圓,在將表面保護膠帶黏貼到表面並剝離後,如果在裝置表面殘留表面保護膠帶的殘膠,則恐有造成裝置不良之虞。
本發明是有鑒於此類問題點而作成者,其目的為提供可以將使裝置損傷或使其發生裝置不良發生之疑慮降低的裝置晶圓之加工方法。
根據本發明所提供的裝置晶圓之加工方法,是表面具備形成有複數個裝置的裝置區域,和圍繞該裝置區域的外周剩餘區域,並且該各裝置具有用於抗拒往黏著膠帶接著之抗接著區域的裝置晶圓之加工方法。特徵在於,其包含:
保護膠帶貼著步驟,在裝置晶圓的表面黏貼紫外線硬化型表面保護膠帶;紫外線照射步驟,在實施該保護膠帶黏貼步驟之前或之後,至少在對應於該抗接著區域的該紫外線硬化型表面保護膠帶的區域照射紫外線以使其接著力降低,同時至少在該外周剩餘區域不照射紫外線以使其接著力殘存;磨削步驟,在實施過該保護膠帶黏貼步驟和該紫外線照射步驟後,透過該紫外線硬化型表面保護膠帶保持裝置晶圓,並對裝置晶圓之背面進行磨削。
較佳地,在紫外線照射步驟中,是在對應於裝置區域的紫外線硬化型表面保護膠帶的區域照射紫外線。
在本發明中,為了保護裝置所使用的表面保護膠帶,是使用可藉紫外線照射而將膠層硬化的紫外線硬化型膠帶。並且,在實施對裝置晶圓之背面進行磨削的磨削步驟前,至少在對應於抗拒往表面保護膠帶接著之裝置晶圓的抗接著區域的紫外線硬化型表面保護膠帶的區域,照射紫外線以使其接著力降低。
因此,當表面膠帶剝離時,由於對應於抗接著區域的表面膠帶之接著力已被降低,所以可以將會讓在作為抗接著區域的裝置區域上形成的裝置之構造體發生破損,並使其發生裝置不良的疑慮降低。
10‧‧‧光罩
10a‧‧‧開口
11‧‧‧裝置晶圓
11a‧‧‧表面
11b‧‧‧背面
12‧‧‧紫外線燈具
13‧‧‧分割預定線(切割道)
14‧‧‧磨削單元
15‧‧‧裝置
16‧‧‧轉軸
17‧‧‧裝置區域
18‧‧‧磨輪安裝座
19‧‧‧外周剩餘區域
20‧‧‧磨削砂輪
21‧‧‧缺口
22‧‧‧螺絲
23‧‧‧微小構造體(抗接著區域)
23a‧‧‧端
24‧‧‧磨輪基台
25‧‧‧紫外線硬化型表面保護膠帶
26‧‧‧磨削研磨石
27‧‧‧基材片
28‧‧‧夾頭台
29‧‧‧膠層(黏著層)
31‧‧‧外形
33、35‧‧‧區域
a、b‧‧‧箭頭
圖1(A)為表面形成有MEMS裝置的裝置晶圓之
表面側立體圖,圖1(B)為裝置晶圓之局部放大平面圖。
圖2為表示將事先在對應於裝置區域之區域照射紫外線的紫外線硬化型表面保護膠帶黏貼至裝置晶圓表面之情形的立體圖。
圖3為表示在裝置晶圓的表面黏貼紫外線硬化型表面保護膠帶之情形的立體圖。
圖4所示為僅在紫外線硬化型表面保護膠帶的裝置區域照射紫外線的紫外線照射步驟之截面圖。
圖5所示為對裝置晶圓之背面進行磨削的磨削步驟之立體圖。
圖6所示為紫外線照射區域的其他實施形態之裝置晶圓的局部放大平面圖。
以下,將參照圖式詳細地說明本發明的實施形態。參照圖1(A),所示為表面形成有複數個MEMS裝置的裝置晶圓之立體圖。圖1(B)則為裝置晶圓之局部放大平面圖。
如圖1(A)所示的裝置晶圓11是由例如,厚度為700μm的矽晶圓所形成,且在表面11a上有複數條形成格子狀的分割預定線(切割道)13,同時在以該複數條分割預定線13所劃分出的各個區域中各自形成有MEMS裝置15。
如此所構成的裝置晶圓11,在其表面具備形成有MEMS裝置15的裝置區域17,和圍繞裝置區域17的外周剩餘區域19。又,在裝置晶圓11的外周形成有作為表示矽晶
圓之結晶方位的記號的缺口21。
如圖1(B)的局部放大平面圖所示,各MEMS裝置15具有微小構造體23。微小構造體23是做成例如,在一端23a以懸臂樑形式連結至裝置晶圓11,並讓微小構造體23的大部分為如同離開裝置晶圓11而懸空之構造。
當在這種微小構造體23上黏貼表面保護膠帶後,在表面保護膠帶剝離時恐有造成微小構造體23破損之虞,所以將其作為抗拒表面保護膠帶之黏貼的區域,因此,在本說明書和申請專利範圍內,是將微小構造體23定義成「抗接著區域」。
參照圖2,所示為說明本發明第一實施形態的保護膠帶黏貼步驟之立體圖。紫外線硬化型表面保護膠帶25是在由聚烯烴(PO)或是聚氯乙烯(PVC)所形成的基材片27上,配置橡膠類或是壓克力類的膠層(黏著層)29而形成。膠層29具有經紫外線照射而硬化以使其接著力下降之性質。
符號31所示為對應於裝置晶圓11的區域,在本實施形態的保護膠帶黏貼步驟中,在裝置晶圓11的表面11a貼上紫外線硬化型表面保護膠帶25之前,會在對應於裝置晶圓11的裝置區域之區域33,事先照射紫外線以使膠層硬化而先將其接著力降低(紫外線照射步驟)。
實施紫外線照射步驟後,會在對應於裝置晶圓11的外周剩餘區域19之區域35,將紫外線硬化型表面保護膠帶25黏貼到裝置晶圓11的表面11a,並沿著裝置晶圓11之外形31切割表面保護膠帶25。
在本實施形態中,是將表面保護膠帶25以區域35黏貼到裝置晶圓11的外周剩餘區域19,在對應於裝置區域17之區域33上則以因膠層29硬化而變小的接著力貼著。
接著,參照圖3及圖4,就第二實施形態的保護膠帶黏貼步驟及紫外線照射步驟進行說明。在本實施形態中,是如圖3所示,將紫外線硬化型表面保護膠帶25黏貼到裝置晶圓11的表面11a(保護膠帶黏貼步驟)。
實施保護膠帶黏貼步驟後,會如圖4所示,將裝置晶圓11載置於具有對應於裝置晶圓11的裝置區域17之開口10a的光罩10上,並從光罩10的下方以紫外線燈具12對紫外線硬化型表面保護膠帶25照射紫外線,以將對應於裝置區域17之區域的紫外線硬化型表面保護膠帶25硬化而使其接著力降低。
由於對應於裝置晶圓11的外周剩餘區域19之紫外線硬化型表面保護膠帶25之區域受到光罩10的遮蓋,因此並無受到紫外線照射的情形,而不會有使其接著力降低之情形。
在圖4所示之紫外線照射步驟實施後,可實施磨削步驟,透過紫外線硬化型表面保護膠帶25將裝置晶圓11吸引保持住,以對裝置晶圓11之背面11b進行磨削。此磨削步驟是如圖5所示,透過磨削裝置的磨削單元14實施。
圖5中,磨削單元14包含,被旋轉驅動的轉軸16、固定在轉軸16前端的磨輪安裝座18,和藉由複數個螺絲22在磨輪安裝座18裝設成可裝卸的磨削砂輪20。磨削砂輪20
是由環狀的磨輪基台24,和在磨輪基台24下端部固接成環狀的複數個磨削研磨石26所構成。
在磨削步驟中,是如圖5所示,利用磨削裝置的夾頭台28吸引保持住紫外線硬化型表面保護膠帶25側,以使裝置晶圓11的背面11b露出。
並且,將夾頭台28繞箭頭a的方向以例如,300rpm旋轉,同時使磨削砂輪20繞和夾頭台28相同的方向,亦即箭頭b方向以例如,6000rpm旋轉,並且作動圖未示的磨削單元傳送機構,以使磨削研磨石26接觸裝置晶圓11之背面11b。
並且,將磨削砂輪20以預定的磨削傳送速度往下方磨削傳送預定量,以實施裝置晶圓11的磨削。一邊以圖未示之接觸式或非接觸式的厚度測量儀器(gauge)量測晶圓11的厚度,一邊將裝置晶圓11加工成所期望的厚度,例如,100μm。
在本實施形態的磨削步驟中,雖然表面保護膠帶25僅用對應於裝置晶圓11的外周剩餘區域19之區域35強固地黏貼在裝置晶圓11的表面11a,對應於裝置區域17之區域33的接著力則因紫外線的照射而被降低,但是即使將預定的磨削荷重施加在裝置晶圓11上,也不會使表面保護膠帶25從裝置晶圓11的表面11a剝離。
磨削步驟結束後,雖然將紫外線硬化型表面保護膠帶25從裝置晶圓11的表面11a剝離,但是由於在對應於裝置區域17之區域33的紫外線硬化型表面保護膠帶25會因紫
外線的照射而被硬化,因而使其接著力下降,故可以將表面保護膠帶25從裝置晶圓11的表面11a剝離,而不會有對裝置15的微小構造體(抗接著區域)23造成損傷的情形。
接著,參照圖6,將說明紫外線照射區域的其他實施形態。在這個實施形態中,是如圖6所示,僅在對應於各個裝置15的微小構造體(抗接著區域)23之區域照射紫外線,以將紫外線硬化型表面保護膠帶25硬化而使其接著力降低。
因為在對應於裝置晶圓11之裝置區域17的其他區域的紫外線硬化型表面保護膠帶25並沒有受到紫外線照射,所以不會有使其接著力下降的情形,且由於可將紫外線硬化型表面保護膠帶25之具有接著性之區域變廣,所以可以做到在磨削中將裝置晶圓11更強固地固定住。
為了僅對各裝置15的微小構造體23照射紫外線,在裝置晶圓11的表面11a貼上紫外線硬化型表面保護膠帶25後,宜使用僅在微小構造體23部分具有開口部的光罩,並照射紫外線。
或者,也可以做成,在將紫外線硬化型表面保護膠帶25黏貼到裝置晶圓11的表面11a前,事先使用相同的光罩對紫外線硬化型表面保護膠帶25照射紫外線,接著將微小構造體(抗接著區域)23的位置對齊已被硬化而使接著力下降的紫外線硬化型表面保護膠帶25後,即可黏貼到裝置晶圓11的表面11a。
在上述的實施形態中,雖然是針對將本發明應用
於形成有MEMS裝置15的裝置晶圓11之例做說明,然而本發明並非受限於此者,對表面形成有CMOS和CCD等攝像裝置的裝置晶圓也可以同樣地適用。
11‧‧‧裝置晶圓
11b‧‧‧背面
14‧‧‧磨削單元
16‧‧‧轉軸
18‧‧‧磨輪安裝座
20‧‧‧磨削砂輪
22‧‧‧螺絲
24‧‧‧磨輪基台
25‧‧‧紫外線硬化型表面保護膠帶
26‧‧‧磨削研磨石
28‧‧‧夾頭台
a、b‧‧‧箭頭
Claims (3)
- 一種裝置晶圓之加工方法,是在該裝置晶圓的表面具備形成有複數個裝置的裝置區域,和圍繞該裝置區域的外周剩餘區域,該各裝置具有以懸臂樑形式連結至裝置晶圓的微小構造體,並且該各裝置具有用於抗拒往黏著膠帶接著之抗接著區域的裝置晶圓之加工方法,其特徵在於包含:保護膠帶黏貼步驟,在該裝置晶圓的表面黏貼作為前述黏著膠帶之紫外線硬化型表面保護膠帶;紫外線照射步驟,在實施該保護膠帶黏貼步驟之前或之後,在該紫外線硬化型表面保護膠帶的第一區域照射紫外線以使該第一區域的接著力降低,並在該紫外線硬化型表面保護膠帶的第二區域不照射紫外線以使該第二區域的接著力殘存,該第一區域是對應於該複數個微小構造體的形狀,該第二區域是對應於該裝置晶圓的至少該外周剩餘區域及在該外周剩餘區域內側之對應於該複數個微小構造體的形狀之區域以外的區域;以及磨削步驟,在實施過該保護膠帶黏貼步驟以及該紫外線照射步驟後,透過該紫外線硬化型表面保護膠帶保持裝置晶圓,並對該裝置晶圓之背面進行磨削。
- 如請求項1所述的裝置晶圓之加工方法,其中,是在實施該保護膠帶黏貼步驟前就實施該紫外線照射步驟。
- 如請求項1所述的裝置晶圓之加工方法,其中,該各裝 置包含MEMS裝置。
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