JP2006523360A5 - - Google Patents

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Publication number
JP2006523360A5
JP2006523360A5 JP2006509807A JP2006509807A JP2006523360A5 JP 2006523360 A5 JP2006523360 A5 JP 2006523360A5 JP 2006509807 A JP2006509807 A JP 2006509807A JP 2006509807 A JP2006509807 A JP 2006509807A JP 2006523360 A5 JP2006523360 A5 JP 2006523360A5
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JP
Japan
Prior art keywords
memory cells
coupled
data signal
bit line
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006509807A
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English (en)
Japanese (ja)
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JP4504364B2 (ja
JP2006523360A (ja
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Publication date
Priority claimed from US10/412,490 external-priority patent/US6862208B2/en
Application filed filed Critical
Publication of JP2006523360A publication Critical patent/JP2006523360A/ja
Publication of JP2006523360A5 publication Critical patent/JP2006523360A5/ja
Application granted granted Critical
Publication of JP4504364B2 publication Critical patent/JP4504364B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006509807A 2003-04-11 2004-04-08 センス・アンプおよびセルフタイム式ラッチを備えるメモリ装置 Expired - Fee Related JP4504364B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/412,490 US6862208B2 (en) 2003-04-11 2003-04-11 Memory device with sense amplifier and self-timed latch
PCT/US2004/010812 WO2004093139A2 (en) 2003-04-11 2004-04-08 Memory device with sense amplifier and self-timed latch

Publications (3)

Publication Number Publication Date
JP2006523360A JP2006523360A (ja) 2006-10-12
JP2006523360A5 true JP2006523360A5 (https=) 2007-06-07
JP4504364B2 JP4504364B2 (ja) 2010-07-14

Family

ID=33131222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006509807A Expired - Fee Related JP4504364B2 (ja) 2003-04-11 2004-04-08 センス・アンプおよびセルフタイム式ラッチを備えるメモリ装置

Country Status (6)

Country Link
US (1) US6862208B2 (https=)
JP (1) JP4504364B2 (https=)
KR (1) KR101060037B1 (https=)
CN (1) CN1774766B (https=)
TW (1) TWI333209B (https=)
WO (1) WO2004093139A2 (https=)

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US6757202B2 (en) * 2002-08-29 2004-06-29 Micron Technology, Inc. Bias sensing in DRAM sense amplifiers
US7042776B2 (en) * 2004-02-18 2006-05-09 International Business Machines Corporation Method and circuit for dynamic read margin control of a memory array
US6967861B2 (en) * 2004-02-27 2005-11-22 International Business Machines Corporation Method and apparatus for improving cycle time in a quad data rate SRAM device
JP2007115362A (ja) * 2005-10-21 2007-05-10 Nec Electronics Corp 半導体記憶装置
US7313040B2 (en) * 2005-10-28 2007-12-25 Sony Corporation Dynamic sense amplifier for SRAM
JP4810350B2 (ja) * 2006-08-14 2011-11-09 株式会社東芝 半導体記憶装置
CN101118780B (zh) * 2007-09-18 2010-09-08 钰创科技股份有限公司 一种具有感测放大器的闩锁器
EP2435286A1 (en) * 2009-05-29 2012-04-04 El-Forest AB Hybrid utility vehicle
US8593896B2 (en) * 2011-03-30 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Differential read write back sense amplifier circuits and methods
US8604838B2 (en) * 2011-12-12 2013-12-10 Texas Instruments Incorporated Comparator with improved time constant
KR102076602B1 (ko) 2013-02-19 2020-02-13 삼성전자주식회사 센스앰프회로 및 반도체 메모리 장치
CN104036812B (zh) * 2013-03-04 2017-04-12 德克萨斯仪器股份有限公司 具有改进的时间常数的比较器
JP6337908B2 (ja) * 2013-11-27 2018-06-06 株式会社ソシオネクスト 半導体記憶装置
JP2016062618A (ja) * 2014-09-12 2016-04-25 株式会社東芝 半導体記憶装置
TWI537975B (zh) * 2014-11-27 2016-06-11 常憶科技股份有限公司 自我時序差動放大器
US9281041B1 (en) 2014-12-16 2016-03-08 Honeywell International Inc. Delay-based read system for a magnetoresistive random access memory (MRAM) bit
US9548089B2 (en) * 2015-04-01 2017-01-17 Qualcomm Incorporated Pipelining an asynchronous memory reusing a sense amp and an output latch
US9881687B2 (en) * 2015-12-18 2018-01-30 Texas Instruments Incorporated Self-latch sense timing in a one-time-programmable memory architecture
CN105976859B (zh) * 2016-05-20 2019-05-17 西安紫光国芯半导体有限公司 一种超低写功耗的静态随机存储器写操作的控制方法
KR102548599B1 (ko) * 2016-06-17 2023-06-29 삼성전자주식회사 버퍼메모리를 포함하는 메모리 장치 및 이를 포함하는 메모리 모듈
FR3055735B1 (fr) * 2016-09-07 2018-09-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Amplificateur de detection apte a controler une operation de lecture dans une memoire
US9997212B1 (en) * 2017-04-24 2018-06-12 Micron Technology, Inc. Accessing data in memory
US10170164B1 (en) * 2018-02-13 2019-01-01 Globalfoundries Inc. Sense amplifier latch circuit and sense amplifier multiplexed latch circuit
US10290340B1 (en) * 2018-03-29 2019-05-14 Qualcomm Technologies, Incorporated Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation
TWI693766B (zh) * 2018-04-18 2020-05-11 力旺電子股份有限公司 靜電放電防護裝置
KR102562118B1 (ko) * 2018-06-26 2023-08-02 에스케이하이닉스 주식회사 신호 수신 회로
US10923185B2 (en) * 2019-06-04 2021-02-16 Qualcomm Incorporated SRAM with burst mode operation
US11328752B2 (en) * 2020-05-20 2022-05-10 Silicon Storage Technology, Inc. Self-timed sensing architecture for a non-volatile memory system
CN115719604A (zh) * 2021-08-24 2023-02-28 合肥格易集成电路有限公司 静态随机存取存储器的读出电路以及电子装置
CN113674777B (zh) * 2021-10-21 2022-03-15 北京紫光青藤微系统有限公司 数据存储装置和用于调用存储数据的方法
KR102754466B1 (ko) * 2022-12-30 2025-01-13 성균관대학교산학협력단 비휘발성 메모리용 의사-차동 고속 감지 스킴

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US5267197A (en) * 1990-12-13 1993-11-30 Sgs-Thomson Microelectronics, Inc. Read/write memory having an improved write driver
KR0177776B1 (ko) * 1995-08-23 1999-04-15 김광호 고집적 반도체 메모리 장치의 데이타 센싱회로
JP3169819B2 (ja) * 1996-02-28 2001-05-28 日本電気アイシーマイコンシステム株式会社 半導体記憶装置
JPH09284100A (ja) * 1996-04-19 1997-10-31 Hitachi Ltd レジスタ回路
JP2978813B2 (ja) * 1997-02-27 1999-11-15 日本電気アイシーマイコンシステム株式会社 半導体記憶回路
US6101145A (en) * 1998-12-21 2000-08-08 Motorola, Inc. Sensing circuit and method
JP2001229670A (ja) * 2000-02-15 2001-08-24 Mitsubishi Electric Corp 半導体記憶装置

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