JP2006520104A - 二酸化炭素を使用した浸漬リソグラフィ方法 - Google Patents

二酸化炭素を使用した浸漬リソグラフィ方法 Download PDF

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Publication number
JP2006520104A
JP2006520104A JP2006508689A JP2006508689A JP2006520104A JP 2006520104 A JP2006520104 A JP 2006520104A JP 2006508689 A JP2006508689 A JP 2006508689A JP 2006508689 A JP2006508689 A JP 2006508689A JP 2006520104 A JP2006520104 A JP 2006520104A
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Prior art keywords
immersion
layer
photoresist layer
carbon dioxide
fluid
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Pending
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JP2006508689A
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Japanese (ja)
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JP2006520104A5 (OSRAM
Inventor
デシモーネ，ジョゼフ・エム
ローランド，ジェイソン・ピー
Original Assignee
ユニヴァーシティ・オヴ・ノース・キャロライナ・アト・チャペル・ヒル
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Publication of JP2006520104A publication Critical patent/JP2006520104A/ja
Publication of JP2006520104A5 publication Critical patent/JP2006520104A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2006508689A 2003-03-11 2004-01-23 二酸化炭素を使用した浸漬リソグラフィ方法 Pending JP2006520104A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/386,356 US7029832B2 (en) 2003-03-11 2003-03-11 Immersion lithography methods using carbon dioxide
PCT/US2004/003556 WO2004081666A1 (en) 2003-03-11 2004-01-23 Immersion lithography methods using carbon dioxide

Publications (2)

Publication Number Publication Date
JP2006520104A true JP2006520104A (ja) 2006-08-31
JP2006520104A5 JP2006520104A5 (OSRAM) 2007-03-08

Family

ID=32961680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006508689A Pending JP2006520104A (ja) 2003-03-11 2004-01-23 二酸化炭素を使用した浸漬リソグラフィ方法

Country Status (5)

Country Link
US (1) US7029832B2 (OSRAM)
EP (1) EP1602012A1 (OSRAM)
JP (1) JP2006520104A (OSRAM)
TW (1) TW200504864A (OSRAM)
WO (1) WO2004081666A1 (OSRAM)

Cited By (7)

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JP2006189687A (ja) * 2005-01-07 2006-07-20 Jsr Corp フォトレジストパターン形成方法、及びフォトレジストパターン形成用基板
JP2006344960A (ja) * 2005-06-10 2006-12-21 Internatl Business Mach Corp <Ibm> 浸漬リソグラフィ装置および方法（少なくとも投影光学コンポーネントとウェハ上で等圧力を有する浸漬リソグラフィ装置）
JP2007513518A (ja) * 2003-12-03 2007-05-24 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 適応浸漬媒体を使用した浸漬リソグラフィプロセス
JP2008530789A (ja) * 2005-02-10 2008-08-07 エーエスエムエル ネザーランズ ビー．ブイ． 液浸液、露光装置および露光方法
JP2008227547A (ja) * 2004-12-20 2008-09-25 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
JP2009500828A (ja) * 2005-07-01 2009-01-08 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 浸漬リソグラフィにおいて超臨界流体を用いてウェーハを乾燥し、レンズを洗浄するための方法及びシステム
JP2015029155A (ja) * 2004-06-09 2015-02-12 株式会社ニコン 露光装置及びデバイス製造方法

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