JP2006519931A - 高アスペクト比のホールを有する加工品の電気めっき方法 - Google Patents

高アスペクト比のホールを有する加工品の電気めっき方法 Download PDF

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Publication number
JP2006519931A
JP2006519931A JP2006504539A JP2006504539A JP2006519931A JP 2006519931 A JP2006519931 A JP 2006519931A JP 2006504539 A JP2006504539 A JP 2006504539A JP 2006504539 A JP2006504539 A JP 2006504539A JP 2006519931 A JP2006519931 A JP 2006519931A
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Prior art keywords
workpiece
pulse
current pulse
current
reverse current
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Ceased
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JP2006504539A
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English (en)
Japanese (ja)
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JP2006519931A5 (https=
Inventor
ベルト レーンツ
タファツーヴァ マガーヤ
Original Assignee
アトーテヒ ドイッチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング
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Application filed by アトーテヒ ドイッチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング filed Critical アトーテヒ ドイッチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング
Publication of JP2006519931A publication Critical patent/JP2006519931A/ja
Publication of JP2006519931A5 publication Critical patent/JP2006519931A5/ja
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1492—Periodical treatments, e.g. pulse plating of through-holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/15—Position of the PCB during processing
    • H05K2203/1572—Processing both sides of a PCB by the same process; Providing a similar arrangement of components on both sides; Making interlayer connections from two sides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
JP2006504539A 2003-03-10 2004-03-04 高アスペクト比のホールを有する加工品の電気めっき方法 Ceased JP2006519931A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10311575A DE10311575B4 (de) 2003-03-10 2003-03-10 Verfahren zum elektrolytischen Metallisieren von Werkstücken mit Bohrungen mit einem hohen Aspektverhältnis
PCT/EP2004/002208 WO2004081262A1 (en) 2003-03-10 2004-02-04 Method of electroplating a workpiece having high-aspect ratio holes

Publications (2)

Publication Number Publication Date
JP2006519931A true JP2006519931A (ja) 2006-08-31
JP2006519931A5 JP2006519931A5 (https=) 2007-05-24

Family

ID=32892263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006504539A Ceased JP2006519931A (ja) 2003-03-10 2004-03-04 高アスペクト比のホールを有する加工品の電気めっき方法

Country Status (7)

Country Link
US (1) US20060151328A1 (https=)
EP (1) EP1601822A1 (https=)
JP (1) JP2006519931A (https=)
KR (1) KR20050105280A (https=)
DE (1) DE10311575B4 (https=)
TW (1) TW200502443A (https=)
WO (1) WO2004081262A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010095775A (ja) * 2008-10-20 2010-04-30 Ebara-Udylite Co Ltd 銅めっきにおけるウィスカーの抑制方法
JP2015503033A (ja) * 2011-12-21 2015-01-29 アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ スルーホールめっきおよびビアフィリングの組み合わせのための方法
US9376758B2 (en) 2010-12-21 2016-06-28 Ebara Corporation Electroplating method
JP2018505960A (ja) * 2014-12-05 2018-03-01 アトテック・ドイチュラント・ゲーエムベーハーＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ Ｇｍｂｈ 基板上に金属を電気メッキする方法および装置
JP2020094237A (ja) * 2018-12-12 2020-06-18 奥野製薬工業株式会社 断続的電気めっき方法
WO2021246133A1 (ja) * 2020-06-02 2021-12-09 奥野製薬工業株式会社 断続的電気めっき方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7947161B2 (en) * 2004-03-19 2011-05-24 Faraday Technology, Inc. Method of operating an electroplating cell with hydrodynamics facilitating more uniform deposition on a workpiece with through holes
US7553401B2 (en) * 2004-03-19 2009-06-30 Faraday Technology, Inc. Electroplating cell with hydrodynamics facilitating more uniform deposition across a workpiece during plating
DE102004045451B4 (de) 2004-09-20 2007-05-03 Atotech Deutschland Gmbh Galvanisches Verfahren zum Füllen von Durchgangslöchern mit Metallen, insbesondere von Leiterplatten mit Kupfer
US20070063521A1 (en) * 2004-12-03 2007-03-22 Lancashire Christopher L Method and apparatus for plating automotive bumpers
JP5073736B2 (ja) * 2006-03-30 2012-11-14 アトテック・ドイチュラント・ゲーエムベーハー 孔及びキャビティの金属による電解充填法
US8062496B2 (en) * 2008-04-18 2011-11-22 Integran Technologies Inc. Electroplating method and apparatus
US20100206737A1 (en) * 2009-02-17 2010-08-19 Preisser Robert F Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv)
US9816193B2 (en) * 2011-01-07 2017-11-14 Novellus Systems, Inc. Configuration and method of operation of an electrodeposition system for improved process stability and performance
EP2668317B1 (en) 2011-01-26 2017-08-23 MacDermid Enthone Inc. Process for filling vias in the microelectronics
US9816196B2 (en) 2012-04-27 2017-11-14 Novellus Systems, Inc. Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte
US9435048B2 (en) * 2013-02-27 2016-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Layer by layer electro chemical plating (ECP) process
DE102013021586A1 (de) * 2013-12-19 2015-06-25 Ludy Galvanosysteme Gmbh Verfahren und Vorrichtung zum elektrochemischen Behandeln von flachem Behandlungsgut
US10154598B2 (en) 2014-10-13 2018-12-11 Rohm And Haas Electronic Materials Llc Filling through-holes
KR102619843B1 (ko) * 2018-12-28 2024-01-02 에이씨엠 리서치 (상하이), 인코포레이티드 도금 장치 및 도금 방법
CN110699725A (zh) * 2019-11-21 2020-01-17 上海江南轧辊有限公司 一种液中放电沉积系统及其使用方法
NL2030054B1 (nl) * 2021-12-07 2023-06-22 Meco Equipment Eng B V Inrichting en werkwijze voor het elektrolytisch behandelen van substraten.
CN114554727B (zh) * 2022-03-31 2024-12-06 生益电子股份有限公司 一种实现高纵横比通盲孔的电镀方法及pcb
CN120425431B (zh) * 2025-07-09 2025-11-07 阜阳师范大学 一种微孔电镀方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH629542A5 (de) * 1976-09-01 1982-04-30 Inoue Japax Res Verfahren und vorrichtung zur galvanischen materialablagerung.
DE4134632C1 (https=) * 1991-10-19 1993-04-01 Schering Ag Berlin Und Bergkamen, 1000 Berlin, De
DE4225961C5 (de) * 1992-08-06 2011-01-27 Atotech Deutschland Gmbh Vorrichtung zur Galvanisierung, insbesondere Verkupferung, flacher platten- oder bogenförmiger Gegenstände
DE4344387C2 (de) * 1993-12-24 1996-09-05 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens
DE19547948C1 (de) * 1995-12-21 1996-11-21 Atotech Deutschland Gmbh Verfahren und Schaltungsanordnung zur Erzeugung von Strompulsen zur elektrolytischen Metallabscheidung
DE19717512C3 (de) * 1997-04-25 2003-06-18 Atotech Deutschland Gmbh Vorrichtung zum Galvanisieren von Leiterplatten unter konstanten Bedingungen in Durchlaufanlagen
US6071398A (en) * 1997-10-06 2000-06-06 Learonal, Inc. Programmed pulse electroplating process
US6210555B1 (en) * 1999-01-29 2001-04-03 Faraday Technology Marketing Group, Llc Electrodeposition of metals in small recesses for manufacture of high density interconnects using reverse pulse plating
DE19915146C1 (de) * 1999-01-21 2000-07-06 Atotech Deutschland Gmbh Verfahren zum galvanischen Bilden von Leiterstrukturen aus hochreinem Kupfer bei der Herstellung von integrierten Schaltungen
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
EP1069212A1 (en) * 1999-07-12 2001-01-17 Applied Materials, Inc. Electrochemical deposition for high aspect ratio structures using electrical pulse modulation
US20040045832A1 (en) * 1999-10-14 2004-03-11 Nicholas Martyak Electrolytic copper plating solutions
US6652727B2 (en) * 1999-10-15 2003-11-25 Faraday Technology Marketing Group, Llc Sequential electrodeposition of metals using modulated electric fields for manufacture of circuit boards having features of different sizes
US6881318B2 (en) * 2001-07-26 2005-04-19 Applied Materials, Inc. Dynamic pulse plating for high aspect ratio features

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010095775A (ja) * 2008-10-20 2010-04-30 Ebara-Udylite Co Ltd 銅めっきにおけるウィスカーの抑制方法
US9376758B2 (en) 2010-12-21 2016-06-28 Ebara Corporation Electroplating method
JP2015503033A (ja) * 2011-12-21 2015-01-29 アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ スルーホールめっきおよびビアフィリングの組み合わせのための方法
JP2018505960A (ja) * 2014-12-05 2018-03-01 アトテック・ドイチュラント・ゲーエムベーハーＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ Ｇｍｂｈ 基板上に金属を電気メッキする方法および装置
US11015257B2 (en) 2014-12-05 2021-05-25 Atotech Deutschland Gmbh Method and apparatus for electroplating a metal onto a substrate
JP2020094237A (ja) * 2018-12-12 2020-06-18 奥野製薬工業株式会社 断続的電気めっき方法
WO2021246133A1 (ja) * 2020-06-02 2021-12-09 奥野製薬工業株式会社 断続的電気めっき方法
WO2021245766A1 (ja) * 2020-06-02 2021-12-09 奥野製薬工業株式会社 断続的電気めっき方法

Also Published As

Publication number Publication date
DE10311575A1 (de) 2004-09-23
WO2004081262A1 (en) 2004-09-23
TW200502443A (en) 2005-01-16
KR20050105280A (ko) 2005-11-03
EP1601822A1 (en) 2005-12-07
US20060151328A1 (en) 2006-07-13
WO2004081262A8 (en) 2004-12-16
DE10311575B4 (de) 2007-03-22

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