JP2006518398A - 被覆された蛍光体、この種の蛍光体を有する発光装置及びその製造方法 - Google Patents
被覆された蛍光体、この種の蛍光体を有する発光装置及びその製造方法 Download PDFInfo
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- JP2006518398A JP2006518398A JP2006501508A JP2006501508A JP2006518398A JP 2006518398 A JP2006518398 A JP 2006518398A JP 2006501508 A JP2006501508 A JP 2006501508A JP 2006501508 A JP2006501508 A JP 2006501508A JP 2006518398 A JP2006518398 A JP 2006518398A
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims abstract description 33
- 239000002245 particle Substances 0.000 claims abstract description 25
- 239000011164 primary particle Substances 0.000 claims abstract description 13
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 4
- 238000007580 dry-mixing Methods 0.000 claims abstract description 3
- 239000011247 coating layer Substances 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 27
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical compound O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 claims description 8
- 229910002012 Aerosil® Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000007062 hydrolysis Effects 0.000 claims description 5
- 238000006460 hydrolysis reaction Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 150000004645 aluminates Chemical class 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000002223 garnet Substances 0.000 claims 2
- 239000005084 Strontium aluminate Substances 0.000 claims 1
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 150000002910 rare earth metals Chemical class 0.000 claims 1
- FNWBQFMGIFLWII-UHFFFAOYSA-N strontium aluminate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Sr+2].[Sr+2] FNWBQFMGIFLWII-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 230000002209 hydrophobic effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- -1 strontium aluminates Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7734—Aluminates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
Abstract
Description
− 火炎加水分解により製造された、ナノ結晶Al2O3、特にDegussa社の商品名Aluminiumoxid C(AlonC)のAl2O3;
− 親水性又は疎水性アエロジル(Aerosile)、タイプSiO2及び他の熱分解シリカ;
− ナノスケールの蛍光体、例えばナノ−Y2O3:Eu。
次に、本発明を、複数の実施例を用いて詳説する。
Claims (11)
- ベース材料として蛍光体の個々の粒子の粉末により形成され、前記粒子は被覆材料で被覆されている被覆された蛍光体において、被覆層は多層であり、かつ粒子状の性質を有し、その際、前記層の個々の一次粒子は少なくとも5nmの大きさであり、かつ平均層厚は少なくとも20nmであることを特徴とする、被覆された蛍光体。
- ベース材料の蛍光体は、ガーネット、特に希土類ガーネット、クロロシリケート、チオガレート並びにアルミン酸塩、特にアルミン酸ストロンチウムのグループから選択されることを特徴とする、請求項1記載の被覆された蛍光体。
- 被覆のために無機材料を選択することを特徴とする、請求項1記載の被覆された蛍光体。
- 被覆のために、材料を火炎加水分解により製造された金属酸化物のグループから選択することを特徴とする、請求項1記載の被覆された蛍光体。
- 層の一次粒子の平均粒度は、一次粒子のd50値として解釈して、最大30nm、有利に高くても15nmであることを特徴とする、請求項4記載の被覆された蛍光体。
- 前記金属酸化物用の金属が、Al、Si、Ti、Zr、Yのグループから選択され、特にアエロジル又はAlon Cであることを特徴とする、請求項4記載の被覆された蛍光体。
- 被覆のためにそれ自体蛍光体、特にY2O3:Euを使用することを特徴とする、請求項1記載の被覆された蛍光体。
- 平均層厚が40〜200nmであることを特徴とする、請求項1記載の被覆された蛍光体。
- 被覆材料のBETによる比表面積は30〜500m2/gであることを特徴とする、請求項3記載の被覆された蛍光体。
- UV領域又は可視光波長領域で放射線を発する少なくとも1つの放射線源と、前記放射線源の放射線を少なくとも部分的により長波長の放射線に変換する蛍光体層とを有する発光装置において、前記蛍光体層が請求項1から9までのいずれか1項記載の被覆された蛍光体から構成されている、発光装置。
- 次の方法工程:
a) ベース材料として蛍光体粉末を準備する工程;
b) 被覆材料として火炎加水分解により製造された金属酸化物を準備する工程;
c) 前記の2つの材料を乾式混合する工程
を特徴とする、被覆された蛍光体の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10307281A DE10307281A1 (de) | 2003-02-20 | 2003-02-20 | Beschichteter Leuchtstoff, lichtemittierende Vorrichtung mit derartigem Leuchtstoff und Verfahren zu seiner Herstellung |
PCT/DE2004/000325 WO2004074400A1 (de) | 2003-02-20 | 2004-02-20 | Beschichteter leuchtstoff, lichtemittierende vorrichtung mit derartigem leuchtstoff und verfahren zu seiner herstellung |
Publications (2)
Publication Number | Publication Date |
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JP2006518398A true JP2006518398A (ja) | 2006-08-10 |
JP4557293B2 JP4557293B2 (ja) | 2010-10-06 |
Family
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JP2006501508A Expired - Lifetime JP4557293B2 (ja) | 2003-02-20 | 2004-02-20 | 被覆された蛍光体、この種の蛍光体を有する発光装置及びその製造方法 |
Country Status (4)
Country | Link |
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US (1) | US7678293B2 (ja) |
JP (1) | JP4557293B2 (ja) |
DE (2) | DE10307281A1 (ja) |
WO (1) | WO2004074400A1 (ja) |
Cited By (7)
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JP2008291251A (ja) * | 2007-04-26 | 2008-12-04 | Sharp Corp | 蛍光体の製造方法、波長変換部材および発光装置 |
WO2012001821A1 (ja) * | 2010-06-29 | 2012-01-05 | 株式会社日本セラテック | 蛍光体材料および発光装置 |
WO2012002377A1 (ja) * | 2010-06-29 | 2012-01-05 | 株式会社日本セラテック | 蛍光体材料および発光装置 |
JP2014136670A (ja) * | 2013-01-18 | 2014-07-28 | Shin Etsu Chem Co Ltd | 強負帯電付与性疎水性球状シリカ微粒子、その製造方法及びそれを用いた静電荷現像用電荷制御剤 |
JP2015089898A (ja) * | 2013-11-05 | 2015-05-11 | 信越化学工業株式会社 | 無機蛍光体粉末、無機蛍光体粉末を用いた硬化性樹脂組成物、波長変換部材および光半導体装置 |
JP2020019921A (ja) * | 2018-02-06 | 2020-02-06 | 信越化学工業株式会社 | 蛍光体粒子 |
JP2020066599A (ja) * | 2018-10-25 | 2020-04-30 | ロート製薬株式会社 | 複合粉体、皮膚外用組成物、及び無機蛍光粉体の蛍光強度増強方法 |
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JP2005265654A (ja) * | 2004-03-19 | 2005-09-29 | Hitachi Maxell Ltd | 複合化粒子 |
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JP2009506157A (ja) * | 2005-08-24 | 2009-02-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光材料 |
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JP5915557B2 (ja) * | 2013-01-30 | 2016-05-11 | 住友金属鉱山株式会社 | 被覆蛍光体粒子及びその製造方法、それを用いたled素子 |
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JP2008291251A (ja) * | 2007-04-26 | 2008-12-04 | Sharp Corp | 蛍光体の製造方法、波長変換部材および発光装置 |
WO2012001821A1 (ja) * | 2010-06-29 | 2012-01-05 | 株式会社日本セラテック | 蛍光体材料および発光装置 |
WO2012002377A1 (ja) * | 2010-06-29 | 2012-01-05 | 株式会社日本セラテック | 蛍光体材料および発光装置 |
JP2012031377A (ja) * | 2010-06-29 | 2012-02-16 | Nihon Ceratec Co Ltd | 蛍光体材料および発光装置 |
KR101771446B1 (ko) * | 2010-06-29 | 2017-08-25 | 니뽄 도쿠슈 도교 가부시키가이샤 | 형광체 재료 및 발광장치 |
JP2014136670A (ja) * | 2013-01-18 | 2014-07-28 | Shin Etsu Chem Co Ltd | 強負帯電付与性疎水性球状シリカ微粒子、その製造方法及びそれを用いた静電荷現像用電荷制御剤 |
JP2015089898A (ja) * | 2013-11-05 | 2015-05-11 | 信越化学工業株式会社 | 無機蛍光体粉末、無機蛍光体粉末を用いた硬化性樹脂組成物、波長変換部材および光半導体装置 |
WO2015068338A1 (ja) * | 2013-11-05 | 2015-05-14 | 信越化学工業株式会社 | 無機蛍光体粉末、無機蛍光体粉末を用いた硬化性樹脂組成物、波長変換部材および光半導体装置 |
TWI557950B (zh) * | 2013-11-05 | 2016-11-11 | Shinetsu Chemical Co | An inorganic phosphor powder, a hardened resin composition using an inorganic phosphor powder, a wavelength conversion member, and a semiconductor device |
JP2020019921A (ja) * | 2018-02-06 | 2020-02-06 | 信越化学工業株式会社 | 蛍光体粒子 |
JP2020066599A (ja) * | 2018-10-25 | 2020-04-30 | ロート製薬株式会社 | 複合粉体、皮膚外用組成物、及び無機蛍光粉体の蛍光強度増強方法 |
Also Published As
Publication number | Publication date |
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DE112004000210D2 (de) | 2005-10-06 |
DE112004000210B4 (de) | 2023-04-20 |
WO2004074400A1 (de) | 2004-09-02 |
US7678293B2 (en) | 2010-03-16 |
DE10307281A1 (de) | 2004-09-02 |
US20060078734A1 (en) | 2006-04-13 |
JP4557293B2 (ja) | 2010-10-06 |
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