JP6496725B2 - 赤色発光蛍光体を有するledパッケージ - Google Patents
赤色発光蛍光体を有するledパッケージ Download PDFInfo
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- JP6496725B2 JP6496725B2 JP2016527216A JP2016527216A JP6496725B2 JP 6496725 B2 JP6496725 B2 JP 6496725B2 JP 2016527216 A JP2016527216 A JP 2016527216A JP 2016527216 A JP2016527216 A JP 2016527216A JP 6496725 B2 JP6496725 B2 JP 6496725B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title description 27
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- 239000011572 manganese Substances 0.000 claims description 66
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- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 18
- 229910052727 yttrium Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- XPIIDKFHGDPTIY-UHFFFAOYSA-N F.F.F.P Chemical compound F.F.F.P XPIIDKFHGDPTIY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 10
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- 229910052744 lithium Inorganic materials 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
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- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 229910052792 caesium Inorganic materials 0.000 claims description 3
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- 229910052719 titanium Inorganic materials 0.000 claims description 3
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- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 7
- 229910052749 magnesium Inorganic materials 0.000 description 6
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- 239000002243 precursor Substances 0.000 description 6
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- 229910052725 zinc Inorganic materials 0.000 description 4
- 102100032047 Alsin Human genes 0.000 description 3
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- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 3
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
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- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- 229910015999 BaAl Inorganic materials 0.000 description 1
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- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910017639 MgSi Inorganic materials 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/617—Silicates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Led Device Packages (AREA)
Description
式中、
Aは、Li、Na、K、Rb、Cs、NR4又はそれらの組合せであり、
Mは、Si、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Hf、Y、La、Nb、Ta、Bi、Gd又はこれらの組合せであり、
Rは、H、低級アルキル又はこれらの組合せであり、
xは、[MFy]イオンの電荷の絶対値であり、
yは、5、6又は7である。
((Sr1-z(Ca,Ba,Mg,Zn)z)1-(x+w)(Li,Na,K,Rb)wCex)3(Al1-ySiy)O4+y+3(x-w)F1-y-3(x-w)、0<x≦0.10、0≦y≦0.5、0≦z≦0.5、0≦w≦x;
(Ca,Ce)3Sc2Si3O12(CaSiG);
(Sr,Ca,Ba)3Al1-xSixO4+xF1-x:Ce3+((Ca,Sr,Ce)3(Al,Si)(O,F)5(SASOF));
(Ba,Sr,Ca)5(PO4)3(Cl,F,Br,OH):Eu2+,Mn2+;(Ba,Sr,Ca)BPO5:Eu2+,Mn2+;
(Sr,Ca)10(PO4)6 *νB2O3:Eu2+(式中、0<ν≦1);Sr2Si3O8 *2SrCl2:Eu2+;
(Ca,Sr,Ba)3MgSi2O8:Eu2+,Mn2+;BaAl8O13:Eu2+;2SrO*0.84P2O5 *0.16B2O3:Eu2+;
(Ba,Sr,Ca)MgAl10O17:Eu2+,Mn2+;(Ba,Sr,Ca)Al2O4:Eu2+;(Y,Gd,Lu,Sc,La)BO3:Ce3+,Tb3+;
ZnS:Cu+,Cl-;ZnS:Cu+,Al3+;ZnS:Ag+,Cl-;ZnS:Ag+,Al3+;(Ba,Sr,Ca)2Si1-ξO4-2ξ:Eu2+(式中、0≦ξ≦0.2);(Ba,Sr,Ca)2(Mg,Zn)Si2O7:Eu2+;(Sr,Ca,Ba)(Al,Ga,In)2S4:Eu2+;
(Y,Gd,Tb,La,Sm,Pr,Lu)3(Al,Ga)5-αO12-3/2α:Ce3+(式中、0≦α≦0.5);
(Ca,Sr)8(Mg,Zn)(SiO4)4Cl2:Eu2+,Mn2+;Na2Gd2B2O7:Ce3+,Tb3+;(Sr,Ca,Ba,Mg,Zn)2P2O7:Eu2+,Mn2+;(Gd,Y,Lu,La)2O3:Eu3+,Bi3+;(Gd,Y,Lu,La)2O2S:Eu3+,Bi3+;(Gd,Y,Lu,La)VO4:Eu3+,Bi3+;
(Ca,Sr)S:Eu2+,Ce3+;SrY2S4:Eu2+;CaLa2S4:Ce3+;(Ba,Sr,Ca)MgP2O7:Eu2+,Mn2+;
(Y,Lu)2WO6:Eu3+,Mo6+;(Ba,Sr,Ca)βSiγNμ:Eu2+(式中、2β+4γ=3μ);Ca3(SiO4)Cl2:Eu2+;
(Lu,Sc,Y,Tb)2-u-vCevCa1+uLiwMg2-wPw(Si,Ge)3-WO12-u/2(式中、−0.5≦u≦1、0<v≦0.1、及び0≦w≦0.2);
(Y,Lu,Gd)2-φCaφSi4N6+φC1-φ:Ce3+、(式中、0≦φ≦0.5);(Lu,Ca,Li,Mg,Y)、Eu2+及び/又はCe3+ドープα−SiAlON;β−SiAlON:Eu2+;(Ca,Sr,)AlSiN3:Eu2+(Ca,Sr,Ba)SiO2N2:Eu2+,Ce3+;
3.5MgO*0.5MgF2 *GeO2:Mn4+;Ca1-C-FCecEufAl1+cSi1-cN3(式中、0≦c≦0.2、0≦f≦0.2);
Ca1-h-rCehEurAl1-h(Mg,Zn)hSiN3,(式中、0≦h≦0.2、0≦r≦0.2);Ca1-2s-tCes(Li,Na)sEutAlSiN3,(式中、0≦s≦0.2、0≦f≦0.2、s+t>0);並びにCa1-σ-χ-φCeσ(Li,Na)χEuφAl1+σ-χSi1-σ+χN3,(式中、0≦σ≦0.2、0≦χ≦0.4、0≦φ≦0.2)が含まれるが、これらに限定されない。具体的には、式Iの蛍光体とブレンドして使用するのに適する蛍光体は、
(Ca,Ce)3Sc2Si3O12(CaSiG);
(Sr,Ca,Ba)3Al1-xSixO4+xF1-x:Ce3+((Ca,Sr,Ce)3(Al,Si)(O,F)5(SASOF));
(Ba,Sr,Ca)2Si1-ξO4-2ξ:Eu2+(式中、0≦ξ≦0.2);
(Y,Gd,Tb,La,Sm,Pr,Lu)3(Al,Ga)5-αO12-3/2α:Ce3+(式中、0≦α≦0.5);
(Ba,Sr,Ca)βSiγNμ:Eu2+(式中、2β+4γ=3μ);(Y,Lu,Gd)2-φCaφSi4N6+φC1-φ:Ce3+、(式中、0≦φ≦0.5);β−SiAlON:Eu2+;及び(Ca,Sr,)AlSiN3:Eu2+である。より具体的には、LEDチップによる励起時に黄緑色光を発する蛍光体は、式Iの蛍光体、例えば、CeドープYAG,(Y,Gd,Tb,La,Sm,Pr,Lu)3(Al,Ga)5-αO12-3/2α:Ce3+(式中、0≦α≦0.5)との蛍光体ブレンドに含まれていてもよい。
K2SiF6:Mn(5モル%のMn、粒径20μm)をK2SiF6:Mn(2モル%のMn、粒径35μm)と組合せ、蛍光体ブレンド(500mg)をシリコーン前駆体(シルガード184、1.50g)と混合する。この混合物を真空チャンバ内で約15分間脱気する。この混合物(0.70g)をディスク状の鋳型(直径28.7mm及び厚さ0.79mm)に注ぎ、1時間保持し、90℃で30分間焼成する。この試料を試験用に5×5mm2の正方形に切断した。
Claims (20)
- 式IのMn4+ドープ複合フッ化物蛍光体を含むLED照明器具の製造方法であって、
Ax(M,Mn)Fy(I)
式IのMn4+ドープ複合フッ化物蛍光体の粒子の第1及び第2の集団を含むポリマー複合層をLEDチップの表面上に形成することを含み、
Aは、Li、Na、K、Rb、Cs、NR4又はそれらの組合せであり、
Mは、Si、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Hf、Y、La、Nb、Ta、Bi、Gd又はこれらの組合せであり、
Rは、H、低級アルキル又はこれらの組合せであり、
xは、[F y ]イオンの電荷の絶対値であり、
yは、5、6又は7であり、
ポリマー複合層が、その厚さ全域でマンガン濃度が変化する傾斜組成を有し、
第1の集団の粒子は第2の集団の粒子よりもマンガン濃度が低く、
ポリマー複合層中のマンガン濃度が、LEDチップの近傍のポリマー複合層の領域における最小値からLEDチップの反対の領域における最大値に及ぶ、方法。 - 第1の集団の粒子中のマンガン濃度が約1モル%〜約2.5モル%の範囲であり、第2の集団の粒子中のマンガン濃度が約2モル%〜約5モル%の範囲である、請求項1に記載の方法。
- 第1の集団の粒子のメジアン粒径が、第2の集団の粒子のメジアン粒径よりも大きい、請求項1または2に記載の方法。
- 第1の集団の粒子のメジアン粒径が約20μm〜約50μmの範囲である、請求項3に記載の方法。
- 第2の集団の粒子のメジアン粒径が約10μm〜約30μmの範囲である、請求項3に記載の方法。
- 第1の集団の粒子の密度が第2の集団の粒子の密度よりも高い、請求項1乃至5のいずれかに記載の方法。
- 第1の集団の粒子の密度が約2.5g/cc〜約4.5g/ccの範囲である、請求項6に記載の方法。
- 第2の集団の粒子の密度が約2.5g/cc〜約4.5g/ccの範囲である、請求項6に記載の方法。
- 式IのMn4+ドープ複合フッ化物蛍光体がK2(Si,Mn)F6である、請求項1乃至8のいずれかに記載の方法。
- 請求項1乃至9のいずれかに記載の方法によって製造されるLED照明器具。
- LEDチップと、
LEDチップの表面上に配置され、次の式IのMn4+ドープ複合フッ化物蛍光体を含むポリマー複合層と、
Ax(M,Mn)Fy(I)
を含むLED照明器具であって、
Aは、Li、Na、K、Rb、Cs、NR4又はそれらの組合せであり、
Mは、Si、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Hf、Y、La、Nb、Ta、Bi、Gd又はこれらの組合せであり、
Rは、H、低級アルキル又はこれらの組合せであり、
xは、[F y ]イオンの電荷の絶対値であり、
yは、5、6又は7であり、
ポリマー複合層の組成がその厚さ全域でマンガン濃度に関して変化し、
マンガン濃度が、LEDチップの近傍のポリマー複合層の領域における最小値からLEDチップの反対の領域における最大値に及び、
ポリマー複合層が、式IのMn4+ドープ複合フッ化物蛍光体の粒子の第1及び第2の集団を含み、第1の集団の粒子が第2の集団の粒子よりもマンガン濃度が低い、LED照明器具。 - 式IのMn4+ドープ複合フッ化物蛍光体がK2(Si,Mn)F6である、請求項11に記載のLED照明器具。
- 第1の集団の複数の粒子が、LEDチップに隣接したポリマー複合層の領域に配置され、第2の集団の複数の粒子がLEDチップと反対のポリマー複合層の領域に配置される、請求項11または12に記載のLED照明器具。
- 第1の集団の粒子のマンガン濃度が約1モル%〜約2.5モル%の範囲であり、第2の集団の粒子のマンガン濃度が約2モル%〜約5モル%の範囲である、請求項11乃至13のいずれかに記載のLED照明器具。
- 第1の集団の粒子のメジアン粒径が、第2の集団の粒子のメジアン粒径よりも大きい、請求項11乃至14のいずれかに記載のLED照明器具。
- 第1の集団の粒子のメジアン粒径が約20μm〜約50μmの範囲である、請求項15に記載のLED照明器具。
- 第2の集団の粒子のメジアン粒径が約10μm〜約30μmの範囲である、請求項15に記載のLED照明器具。
- 第1の集団の粒子の密度が第2の集団の粒子の密度よりも高い、請求項11乃至17のいずれかに記載のLED照明器具。
- 第1の集団の粒子の密度が約2.5g/cc〜約4.5g/ccの範囲である、請求項18に記載のLED照明器具。
- 第2の集団の粒子の密度が約2.5g/cc〜約4.5g/ccの範囲である、請求項18に記載のLED照明器具。
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US14/073,141 US20150123153A1 (en) | 2013-11-06 | 2013-11-06 | Led package with red-emitting phosphors |
US14/073,141 | 2013-11-06 | ||
PCT/US2014/057570 WO2015069385A1 (en) | 2013-11-06 | 2014-09-26 | Led package with red-emitting phosphors |
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---|---|---|---|---|
US9231168B2 (en) * | 2013-05-02 | 2016-01-05 | Industrial Technology Research Institute | Light emitting diode package structure |
US10230022B2 (en) | 2014-03-13 | 2019-03-12 | General Electric Company | Lighting apparatus including color stable red emitting phosphors and quantum dots |
CN118291130A (zh) * | 2015-05-18 | 2024-07-05 | 卡任特照明解决方案有限责任公司 | 用于制备mn掺杂的氟化物磷光体的方法 |
JP6472728B2 (ja) * | 2015-08-04 | 2019-02-20 | 日亜化学工業株式会社 | 発光装置および発光装置を備えたバックライト |
DE102015119817A1 (de) * | 2015-11-17 | 2017-05-18 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement |
US10883045B2 (en) * | 2016-05-02 | 2021-01-05 | Current Lighting Solutions, Llc | Phosphor materials including fluidization materials for light sources |
US10193030B2 (en) * | 2016-08-08 | 2019-01-29 | General Electric Company | Composite materials having red emitting phosphors |
CN108695422B (zh) * | 2017-04-10 | 2020-10-20 | 深圳光峰科技股份有限公司 | 发光装置及其制备方法 |
DE102018120584A1 (de) * | 2018-08-23 | 2020-02-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
CN109830592B (zh) * | 2019-01-10 | 2019-11-12 | 旭宇光电(深圳)股份有限公司 | 半导体发光二极管装置 |
TWI765274B (zh) * | 2020-06-05 | 2022-05-21 | 台灣勁合有限公司 | Led燈珠製程及led燈珠結構 |
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JP3717480B2 (ja) * | 2003-01-27 | 2005-11-16 | ローム株式会社 | 半導体発光装置 |
JP4143043B2 (ja) * | 2004-05-26 | 2008-09-03 | 京セラ株式会社 | 発光装置および照明装置 |
US7358542B2 (en) | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
US7497973B2 (en) * | 2005-02-02 | 2009-03-03 | Lumination Llc | Red line emitting phosphor materials for use in LED applications |
US7648649B2 (en) * | 2005-02-02 | 2010-01-19 | Lumination Llc | Red line emitting phosphors for use in led applications |
US8044419B2 (en) * | 2006-05-30 | 2011-10-25 | University Of Georgia Research Foundation, Inc. | White phosphors, methods of making white phosphors, white light emitting LEDS, methods of making white light emitting LEDS, and light bulb structures |
JP5104490B2 (ja) * | 2007-04-16 | 2012-12-19 | 豊田合成株式会社 | 発光装置及びその製造方法 |
KR101592836B1 (ko) * | 2008-02-07 | 2016-02-05 | 미쓰비시 가가꾸 가부시키가이샤 | 반도체 발광 장치, 백라이트, 컬러 화상 표시 장치, 및 그들에 사용하는 형광체 |
WO2009110285A1 (ja) * | 2008-03-03 | 2009-09-11 | シャープ株式会社 | 発光装置 |
CN101577297A (zh) * | 2008-05-09 | 2009-11-11 | 旭丽电子(广州)有限公司 | 发光封装结构及其制造方法 |
JP2010004035A (ja) * | 2008-05-22 | 2010-01-07 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、および画像表示装置 |
US8329060B2 (en) * | 2008-10-22 | 2012-12-11 | General Electric Company | Blue-green and green phosphors for lighting applications |
US8703016B2 (en) * | 2008-10-22 | 2014-04-22 | General Electric Company | Phosphor materials and related devices |
JP4949525B2 (ja) * | 2010-03-03 | 2012-06-13 | シャープ株式会社 | 波長変換部材、発光装置および画像表示装置ならびに波長変換部材の製造方法 |
US8252613B1 (en) * | 2011-03-23 | 2012-08-28 | General Electric Company | Color stable manganese-doped phosphors |
JP2012248553A (ja) * | 2011-05-25 | 2012-12-13 | Panasonic Corp | 発光装置及びそれを用いた照明装置 |
JP2013004739A (ja) * | 2011-06-16 | 2013-01-07 | Panasonic Corp | 発光装置及びそれを用いた照明器具 |
JP2013157397A (ja) * | 2012-01-27 | 2013-08-15 | Toshiba Corp | 発光装置 |
JP6297505B2 (ja) * | 2012-02-16 | 2018-03-20 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 半導体led用のコーティングされた狭帯域赤色発光フルオロケイ酸塩 |
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WO2015069385A1 (en) | 2015-05-14 |
US20150123153A1 (en) | 2015-05-07 |
KR20160083015A (ko) | 2016-07-11 |
JP2017500732A (ja) | 2017-01-05 |
TWI651393B (zh) | 2019-02-21 |
CN105684172B (zh) | 2018-11-16 |
EP3066697A1 (en) | 2016-09-14 |
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