MX2016005884A - Paquete de diodos emisores de luz con fosforos emisores de luz roja. - Google Patents

Paquete de diodos emisores de luz con fosforos emisores de luz roja.

Info

Publication number
MX2016005884A
MX2016005884A MX2016005884A MX2016005884A MX2016005884A MX 2016005884 A MX2016005884 A MX 2016005884A MX 2016005884 A MX2016005884 A MX 2016005884A MX 2016005884 A MX2016005884 A MX 2016005884A MX 2016005884 A MX2016005884 A MX 2016005884A
Authority
MX
Mexico
Prior art keywords
population
particles
combination
composite layer
polymer composite
Prior art date
Application number
MX2016005884A
Other languages
English (en)
Inventor
James Edward Murphy
Anant Achyut Setlur
Florencio Garcia
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of MX2016005884A publication Critical patent/MX2016005884A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
    • C09K11/617—Silicates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

Un procedimiento para fabricar un aparato de iluminación de LED que comprende un fósforo impurificado con Mn4+ de color estable de la fórmula I, que incluye formar sobre una superficie de un chip de LED una capa polimérica compuesta que comprende una primera y una segunda poblaciones de partículas del fósforo de la fórmula I que tiene una composición graduada que varía en concentración de manganeso a través del espesor de la misma; Ax (M, Mn) Fy (I), en donde A es Li, Na, K, Rb, Cs, NR4 o una combinación de los mismos; M es Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, o una combinación de los mismos; R es H, alquilo inferior, o una combinación de los mismos; x es el valor absoluto de la carga del ion de [MFy] ; e y es 5, 6 o 7; la primera población de partículas tiene una concentración de manganeso inferior que la de la segunda población de partículas, y la concentración de manganeso en la capa polimérica compuesta varía desde un valor mínimo en una región de la capa polimérica compuesta próxima al chip de LED hasta un valor máximo en una región opuesta al chip de LED.
MX2016005884A 2013-11-06 2014-09-26 Paquete de diodos emisores de luz con fosforos emisores de luz roja. MX2016005884A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/073,141 US20150123153A1 (en) 2013-11-06 2013-11-06 Led package with red-emitting phosphors
PCT/US2014/057570 WO2015069385A1 (en) 2013-11-06 2014-09-26 Led package with red-emitting phosphors

Publications (1)

Publication Number Publication Date
MX2016005884A true MX2016005884A (es) 2016-07-13

Family

ID=51663520

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2016005884A MX2016005884A (es) 2013-11-06 2014-09-26 Paquete de diodos emisores de luz con fosforos emisores de luz roja.

Country Status (11)

Country Link
US (1) US20150123153A1 (es)
EP (1) EP3066697A1 (es)
JP (1) JP6496725B2 (es)
KR (1) KR20160083015A (es)
CN (1) CN105684172B (es)
AU (1) AU2014347188B2 (es)
BR (1) BR112016009298A8 (es)
CA (1) CA2929037A1 (es)
MX (1) MX2016005884A (es)
TW (1) TWI651393B (es)
WO (1) WO2015069385A1 (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9231168B2 (en) * 2013-05-02 2016-01-05 Industrial Technology Research Institute Light emitting diode package structure
US10230022B2 (en) 2014-03-13 2019-03-12 General Electric Company Lighting apparatus including color stable red emitting phosphors and quantum dots
KR102167629B1 (ko) * 2015-05-18 2020-10-20 제네럴 일렉트릭 컴퍼니 Mn 도핑된 플루오르화물 인광체의 제조 방법
JP6472728B2 (ja) 2015-08-04 2019-02-20 日亜化学工業株式会社 発光装置および発光装置を備えたバックライト
DE102015119817A1 (de) * 2015-11-17 2017-05-18 Osram Opto Semiconductors Gmbh Halbleiterbauelement
US10883045B2 (en) * 2016-05-02 2021-01-05 Current Lighting Solutions, Llc Phosphor materials including fluidization materials for light sources
US10193030B2 (en) 2016-08-08 2019-01-29 General Electric Company Composite materials having red emitting phosphors
CN108695422B (zh) * 2017-04-10 2020-10-20 深圳光峰科技股份有限公司 发光装置及其制备方法
DE102018120584A1 (de) * 2018-08-23 2020-02-27 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
CN109830592B (zh) * 2019-01-10 2019-11-12 旭宇光电（深圳）股份有限公司 半导体发光二极管装置
TWI765274B (zh) * 2020-06-05 2022-05-21 台灣勁合有限公司 Led燈珠製程及led燈珠結構

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3717480B2 (ja) * 2003-01-27 2005-11-16 ローム株式会社 半導体発光装置
JP4143043B2 (ja) * 2004-05-26 2008-09-03 京セラ株式会社 発光装置および照明装置
US7648649B2 (en) * 2005-02-02 2010-01-19 Lumination Llc Red line emitting phosphors for use in led applications
US7358542B2 (en) 2005-02-02 2008-04-15 Lumination Llc Red emitting phosphor materials for use in LED and LCD applications
US7497973B2 (en) * 2005-02-02 2009-03-03 Lumination Llc Red line emitting phosphor materials for use in LED applications
WO2007143379A2 (en) * 2006-05-30 2007-12-13 University Of Georgia Research Foundation White phosphors, methods of making white phosphors, white light emitting leds, methods of making white light emitting leds, and light bulb structures
JP5104490B2 (ja) * 2007-04-16 2012-12-19 豊田合成株式会社 発光装置及びその製造方法
CN101939857B (zh) * 2008-02-07 2013-05-15 三菱化学株式会社 半导体发光装置、背光源、彩色图像显示装置以及这些中使用的荧光体
WO2009110285A1 (ja) * 2008-03-03 2009-09-11 シャープ株式会社 発光装置
CN101577297A (zh) * 2008-05-09 2009-11-11 旭丽电子(广州)有限公司 发光封装结构及其制造方法
JP2010004035A (ja) * 2008-05-22 2010-01-07 Mitsubishi Chemicals Corp 半導体発光装置、照明装置、および画像表示装置
US8329060B2 (en) * 2008-10-22 2012-12-11 General Electric Company Blue-green and green phosphors for lighting applications
US8703016B2 (en) * 2008-10-22 2014-04-22 General Electric Company Phosphor materials and related devices
JP4949525B2 (ja) * 2010-03-03 2012-06-13 シャープ株式会社 波長変換部材、発光装置および画像表示装置ならびに波長変換部材の製造方法
US8252613B1 (en) * 2011-03-23 2012-08-28 General Electric Company Color stable manganese-doped phosphors
JP2012248553A (ja) * 2011-05-25 2012-12-13 Panasonic Corp 発光装置及びそれを用いた照明装置
JP2013004739A (ja) * 2011-06-16 2013-01-07 Panasonic Corp 発光装置及びそれを用いた照明器具
JP2013157397A (ja) * 2012-01-27 2013-08-15 Toshiba Corp 発光装置
CN104114671B (zh) * 2012-02-16 2016-10-26 皇家飞利浦有限公司 用于半导体led的涂布的窄带发红光氟硅酸盐
JP6503929B2 (ja) * 2014-06-30 2019-04-24 日亜化学工業株式会社 半導体発光装置

Also Published As

Publication number Publication date
AU2014347188A1 (en) 2016-05-26
CA2929037A1 (en) 2015-05-14
CN105684172A (zh) 2016-06-15
CN105684172B (zh) 2018-11-16
JP2017500732A (ja) 2017-01-05
AU2014347188B2 (en) 2018-08-30
BR112016009298A8 (pt) 2020-03-24
TWI651393B (zh) 2019-02-21
KR20160083015A (ko) 2016-07-11
TW201531554A (zh) 2015-08-16
JP6496725B2 (ja) 2019-04-03
EP3066697A1 (en) 2016-09-14
WO2015069385A1 (en) 2015-05-14
US20150123153A1 (en) 2015-05-07

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