WO2004074400A1 - Beschichteter leuchtstoff, lichtemittierende vorrichtung mit derartigem leuchtstoff und verfahren zu seiner herstellung - Google Patents
Beschichteter leuchtstoff, lichtemittierende vorrichtung mit derartigem leuchtstoff und verfahren zu seiner herstellung Download PDFInfo
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- WO2004074400A1 WO2004074400A1 PCT/DE2004/000325 DE2004000325W WO2004074400A1 WO 2004074400 A1 WO2004074400 A1 WO 2004074400A1 DE 2004000325 W DE2004000325 W DE 2004000325W WO 2004074400 A1 WO2004074400 A1 WO 2004074400A1
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- WIPO (PCT)
- Prior art keywords
- phosphor
- coated
- coating
- coated phosphor
- layer
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7734—Aluminates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
Definitions
- the invention relates to a coated phosphor according to the preamble of claim 1. It is in particular a phosphor for use in light-emitting devices such as lamps or LEDs or lights with these radiation sources. Another aspect of the invention relates to the production of the coated phosphor.
- a coated phosphor, light-emitting device with such phosphor and method for its production are known, in which an LED and a phosphor layer are used.
- the phosphor used is SrS: Eu, which is coated with SiO2 with a layer thickness of 100 nm in order to improve the service life.
- the proposed stabilization facilitates the introduction of the phosphor into the device.
- this provides a means of specifically controlling the refractive index of the phosphor and adapting it to its surroundings, for example a resin.
- the method according to the invention is based on the high reactivity of nanoscale particles, as are usually produced by flame hydrolysis. Typical surfaces of these particles are 30 to 500 m 2 / g according to BET.
- inorganic substances such as metal oxides, in particular oxides of Al, Si, Ti, or Zr, are suitable as particles. These particles can simply be mixed with the phosphor powder, in a dry way, for example in a ball mill, or in a tumble mixer. It is a homogenizing mixture, not a grinding. There is no need for a wet chemical reaction or temperature treatment. The coating takes place during the mixing process due to the large surface area and the adsorption capacity of the nanoscale material. Its primary grain size is typically at a mean value d 50 of 5 to 30 nm.
- the layer thickness on the phosphor core is at least 20 nm, 50 to 100 nm are typical, but significantly higher layer thicknesses are also possible.
- a typical characteristic of such a dry applied layer is its particulate character, which means that the membership of the layer components to individual primary grains is still clearly recognizable.
- the phosphor grains are coated with inorganic particles of nanometer size, and the resulting layer thickness can consist of several layers of these particles.
- This coating can be achieved using a simple dry mixing process.
- the particles of the coating material can be hydrophilic or hydrophobic.
- the layer thicknesses are very uniform. There is a risk that cracks will easily form in the layer if the thermal expansion coefficients of the grain and layer material are not well matched. In contrast, inhomogeneous ne layers are not very sensitive in this regard, since their character is mainly characterized by the primary grains in the coating.
- Examples of the original phosphors are moisture-sensitive phosphors with a hydrophilic surface for use in LEDs (typical excitation between 350 and 490 nm), for example chlorosilicate such as the known chlorosilica Eu or chlorosilicate: Eu, Mn, as from DE 100 26 435 known, or thiogallates as known from DE 100 28 266.
- chlorosilicate such as the known chlorosilica Eu or chlorosilicate: Eu, Mn, as from DE 100 26 435 known, or thiogallates as known from DE 100 28 266.
- This can be damaged by moisture and temperature during processing, especially by the diffusion of moisture into the resin in the presence of blue radiation, as is often used as the primary emission of an LED in the operation of such a device.
- the incorporation of the hydrophilic phosphors into a hydrophobic resin leads to agglomeration and increased sedimentation.
- a strontium aluminate in particular the well-known Sr4AI14O25: Eu for use in Hg low-pressure fluorescent lamps or Hg high-pressure discharge lamps, is a particularly successfully tested phosphor with coating for lamp applications (typical excitation at 150 to 260 nm).
- Specific examples of coating materials are:
- Al 2 O 3 flame hydrolytically produced, nanocrystalline Al 2 O 3 , in particular the Al 2 O 3 from Degussa with the trade name aluminum oxide C (Alon C);
- Nanoscale phosphors such as nano-Y2O3: Eu.
- these coatings allow the phosphors to be evenly introduced into other hydrophobic media, such as that Epoxy resin in the case of LEDs, improved, which is almost indispensable for a high-quality LED.
- a concrete example is hydrophobic Aerosil.
- the coating is made with nano-TiO2 or other materials with a high ⁇ refractive index, such as ZrO2, the nano-layer forms a zone with a medium refractive index that lies between that of the phosphor and that of the surrounding medium (resin), which reduces reflection losses .
- phosphors which are suitable for coating are YAG: Ce, TbAG: Ce, chlorosilicates and thiogallates, in particular Mg-containing thiogallates.
- the layer described here can also be applied as a second layer to an already primarily coated grain.
- grain means original grain including primary coating.
- Figure 1 is a semiconductor device that serves as a light source (LED) for white light;
- Figure 2 shows a lighting unit with phosphors according to the present
- FIGS. 3 and 4 show an SEM image of uncoated and coated phosphor according to the present invention
- FIG. 5 shows an SEM image of coated phosphor according to the present invention after installation in a lamp
- the light source is a semiconductor component (chip 1) of the type InGaN with a Peak emission wavelength of 460 nm with a first and second electrical connection 2, 3, which is embedded in an opaque basic housing 8 in the region of a recess 9.
- One of the connections 3 is connected to the chip 1 via a bonding wire 14.
- the recess has a wall 17 which serves as a reflector for the blue primary radiation of the chip 1.
- the recess 9 is filled with a casting compound 5, which contains an epoxy casting resin (80 to 90% by weight) and phosphor pigments 6 (less than 15% by weight) as main components. Other small proportions include methyl ether and Aerosil.
- the phosphor pigments are a mixture of several pigments, including sulfides.
- FIG. 2 shows a section of a surface light 20 as a lighting unit. It consists of a common carrier 21, onto which a cuboid outer housing 22 is glued. Its top is provided with a common cover 23.
- the cuboid housing has cutouts in which individual semiconductor components 24 are accommodated. They are UV-emitting light-emitting diodes with a peak emission of 380 nm.
- the conversion to white light takes place by means of conversion layers which are seated directly in the casting resin of the individual LEDs, as described in FIG. 1, or layers 25 which are attached to all surfaces accessible to UV radiation are. These include the inner surfaces of the side walls of the housing, the cover and the base part.
- the conversion layers 25 consist of three phosphors which emit in the yellow, green and blue spectral range using the phosphors according to the invention.
- inventive light-emitting substances are, for example, chlorides rosilikate type Ca 8 . ⁇ - EuxMnyMg y (SiO4) 4CI2 0 ⁇ y ⁇ 0.06, which are stabilized by a 35 nm thick coating with Aerosil R 812 from Degussa.
- Aerosil R 812 is flame-hydrolytically manufactured. They are manufactured by simply mixing both the fluorescent and aerosil components over a period of 20 hours in a tumble mixer.
- Sr Al 14 O 25 : Eu which has been coated with hydrophilic Alon C (Al 2 O 3 ). It is used for Hg low pressure fluorescent lamps, for example T8 36 W lamps used.
- the fluorescent water coating is carried out in the usual way. There is an increase in the luminous flux after 100 hours by typically 10%. In particular, an up to 17% improvement in the initial luminous flux or the luminous flux after 100 hours of burning time with a very low decrease in luminous flux can be determined under the same measurement conditions.
- the luminous efficiency-related luminous efficacy after 100 hours was 113.3% uncoated (based on a standard value of 100%), while under otherwise identical conditions an Alon C coating gave a value of 123.3%, ie an increase at 9 %.
- the loss of light caused by the phosphor was 1.4% in the case of an uncoated phosphor, whereas a slight increase of 0.3% was observed with coated phosphor.
- FIG. 3 shows an uncoated phosphor powder in comparison to a phosphor powder coated according to the invention (FIG. 4), in each case as an SEM image in a magnification of 5000 times.
- the particulate character of the layer can be clearly seen in FIG. 4. It looks like a sponge with pores or also like mold growth on the base material compared to the clear contours of the untreated grains of the base material, see Fig. 3. Both figures are taken at the same magnification scale.
- the particular character of the layer means in particular that the layer on the grains of the base material is inhomogeneous and that the structure of its primary particles can still be clearly recognized, similar to a heap of rubble made of individual stones.
- the structure created by the primary particles of the layer is significantly smaller than the typical diameter of the base material.
- a scale difference by a factor of 100, at least a factor of 10, between the particles of the base material and the coating material is typical.
- the primary particles of the coating material clump inhomogeneously, in contrast to processes that form homogeneous layers such as CVD or organic coating.
- the primary particles clump together to form aggregates and agglomerates. It is not excluded that a small part of the surface of the base material is free of the coating. However, the entire surface is advantageously coated at least in one layer, which can be achieved, for example, by appropriately long dry mixing.
- the layer thickness is highly variable and is best described by the average layer thickness over a given area, which can be derived, for example, from the applied weight per unit area. In terms of the size of the primary grain, the layer thickness varies to a similar extent as with a honeycomb structure or a surface that is covered with a coarse mesh in several layers.
- the phosphor after it has been applied to the glass bulb of a fluorescent lamp. Although the phosphor is only mixed dry with the coating material, it shows such high adhesion that it survives the process of lamp manufacture as a coating. This property is primarily due to the small size of the primary particles of the layer and the associated high reactivity.
- FIGS. 6 and 7 show the loss of light after 100 hours compared to the original value in percent of the original value and the absolute value of the luminous flux after 100 hours in lumens.
- the phosphor used in the sense of the base material is Sr aluminate: Eu 2+ .
- the coating, which was applied to the grains of the phosphor by means of dry coating, is Alon C.
- the light loss of the lamps with uncoated phosphor after 100 hours is significantly higher, about 29%, than that of the lamps with coated phosphor, for which it is only about Is 19%; see Figure 6.
- the absolute value of the luminous flux is already noticeably lower after 100 hours in the case of lamps with uncoated phosphor than in the case of lamps with uncoated phosphor. Similar investigations were carried out with heavily loaded T5 lamps of the 54 W power level. They tended to show the same behavior, albeit less pronounced. The light loss of these lamps with uncoated phosphor after 100 hours is higher, about 24%, than that of the lamps with coated phosphor, where it is only about 21%.
- the duration of the mixing of the base and base materials should be between 5 and 30 hours, depending on the type and nature of the materials.
- the size of the grains of the base material is typically in the micrometer range, in particular the value for d50 is in a range from 1 to 10 ⁇ m.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006501508A JP4557293B2 (ja) | 2003-02-20 | 2004-02-20 | 被覆された蛍光体、この種の蛍光体を有する発光装置及びその製造方法 |
US10/544,497 US7678293B2 (en) | 2003-02-20 | 2004-02-20 | Coated fluorescent substance, light emitting device comprising said substance and a method for producing said substance |
DE112004000210.9T DE112004000210B4 (de) | 2003-02-20 | 2004-02-20 | Lichtemittierende Vorrichtung mit beschichtetem Leuchtstoff und Verfahren zu seiner Herstellung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE10307281A DE10307281A1 (de) | 2003-02-20 | 2003-02-20 | Beschichteter Leuchtstoff, lichtemittierende Vorrichtung mit derartigem Leuchtstoff und Verfahren zu seiner Herstellung |
DE10307281.0 | 2003-02-20 |
Publications (1)
Publication Number | Publication Date |
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WO2004074400A1 true WO2004074400A1 (de) | 2004-09-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/DE2004/000325 WO2004074400A1 (de) | 2003-02-20 | 2004-02-20 | Beschichteter leuchtstoff, lichtemittierende vorrichtung mit derartigem leuchtstoff und verfahren zu seiner herstellung |
Country Status (4)
Country | Link |
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US (1) | US7678293B2 (de) |
JP (1) | JP4557293B2 (de) |
DE (2) | DE10307281A1 (de) |
WO (1) | WO2004074400A1 (de) |
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JP2007180494A (ja) * | 2005-12-27 | 2007-07-12 | Samsung Electro Mech Co Ltd | 蛍光体膜形成方法及びこれを用いた発光ダイオードパッケージの製造方法 |
CN100414727C (zh) * | 2005-11-04 | 2008-08-27 | 江苏日月照明电器有限公司 | 一种白光led荧光粉涂覆厚度控制方法 |
JP2009506157A (ja) * | 2005-08-24 | 2009-02-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光材料 |
US7718088B2 (en) * | 2006-05-12 | 2010-05-18 | Lighthouse Technology Co., Ltd | Light emitting diode and wavelength converting material |
JP2014145047A (ja) * | 2013-01-30 | 2014-08-14 | Sumitomo Metal Mining Co Ltd | 被覆蛍光体粒子及びその製造方法、それを用いたled素子 |
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US20060192225A1 (en) * | 2005-02-28 | 2006-08-31 | Chua Janet B Y | Light emitting device having a layer of photonic crystals with embedded photoluminescent material and method for fabricating the device |
US7358543B2 (en) * | 2005-05-27 | 2008-04-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device |
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JP2008291251A (ja) * | 2007-04-26 | 2008-12-04 | Sharp Corp | 蛍光体の製造方法、波長変換部材および発光装置 |
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JP2020019921A (ja) * | 2018-02-06 | 2020-02-06 | 信越化学工業株式会社 | 蛍光体粒子 |
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- 2004-02-20 WO PCT/DE2004/000325 patent/WO2004074400A1/de active Application Filing
- 2004-02-20 US US10/544,497 patent/US7678293B2/en not_active Expired - Lifetime
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Cited By (8)
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JP2009506157A (ja) * | 2005-08-24 | 2009-02-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光材料 |
US8012371B2 (en) * | 2005-08-24 | 2011-09-06 | Koninklijke Philips Electronics N.V. | Luminescent material |
CN100414727C (zh) * | 2005-11-04 | 2008-08-27 | 江苏日月照明电器有限公司 | 一种白光led荧光粉涂覆厚度控制方法 |
JP2007180494A (ja) * | 2005-12-27 | 2007-07-12 | Samsung Electro Mech Co Ltd | 蛍光体膜形成方法及びこれを用いた発光ダイオードパッケージの製造方法 |
US7842333B2 (en) | 2005-12-27 | 2010-11-30 | Samsung Led Co., Ltd. | Method of forming phosphor film and method of manufacturing light emitting diode package incorporating the same |
US8226852B2 (en) | 2005-12-27 | 2012-07-24 | Samsung Led Co., Ltd. | Method of forming phosphor film and method of manufacturing light emitting diode package incorporating the same |
US7718088B2 (en) * | 2006-05-12 | 2010-05-18 | Lighthouse Technology Co., Ltd | Light emitting diode and wavelength converting material |
JP2014145047A (ja) * | 2013-01-30 | 2014-08-14 | Sumitomo Metal Mining Co Ltd | 被覆蛍光体粒子及びその製造方法、それを用いたled素子 |
Also Published As
Publication number | Publication date |
---|---|
JP4557293B2 (ja) | 2010-10-06 |
DE112004000210B4 (de) | 2023-04-20 |
US20060078734A1 (en) | 2006-04-13 |
JP2006518398A (ja) | 2006-08-10 |
DE112004000210D2 (de) | 2005-10-06 |
DE10307281A1 (de) | 2004-09-02 |
US7678293B2 (en) | 2010-03-16 |
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