JP4557293B2 - 被覆された蛍光体、この種の蛍光体を有する発光装置及びその製造方法 - Google Patents
被覆された蛍光体、この種の蛍光体を有する発光装置及びその製造方法 Download PDFInfo
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- JP4557293B2 JP4557293B2 JP2006501508A JP2006501508A JP4557293B2 JP 4557293 B2 JP4557293 B2 JP 4557293B2 JP 2006501508 A JP2006501508 A JP 2006501508A JP 2006501508 A JP2006501508 A JP 2006501508A JP 4557293 B2 JP4557293 B2 JP 4557293B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 70
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims description 36
- 238000000576 coating method Methods 0.000 claims description 35
- 239000011248 coating agent Substances 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 26
- 239000011164 primary particle Substances 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical compound O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 claims description 8
- 230000007062 hydrolysis Effects 0.000 claims description 6
- 238000006460 hydrolysis reaction Methods 0.000 claims description 6
- 150000004706 metal oxides Chemical group 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004645 aluminates Chemical class 0.000 claims description 3
- 238000007580 dry-mixing Methods 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 241000255925 Diptera Species 0.000 claims 1
- 239000002223 garnet Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 26
- 239000000126 substance Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 229910002012 Aerosil® Inorganic materials 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 230000002209 hydrophobic effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- -1 strontium aluminates Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7734—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
Description
− 火炎加水分解により製造された、ナノ結晶Al2O3、特にDegussa社の商品名Aluminiumoxid C(AlonC)のAl2O3;
− 親水性又は疎水性アエロジル(Aerosile)、タイプSiO2及び他の熱分解シリカ;
− ナノスケールの蛍光体、例えばナノ−Y2O3:Eu。
次に、本発明を、複数の実施例を用いて詳説する。
Claims (13)
- ベース材料としてUV線又は可視光線により励起される蛍光体の個々の粒子の粉末を有し、前記粒子は被覆材料の層で被覆されている被覆された蛍光体において、前記層は少なくとも20nmの平均層厚を有する不均一な層厚を有し、かつ前記層は複数の層を有し、かつ前記複数の層のそれぞれは被覆材料を有し、かつ粒子状の性質を有し、その際、前記層の個々の一次粒子は少なくとも5nmの大きさであり、前記層の前記被覆材料の前記の個々の一次粒子は相互に凝固してアグリゲート及びアグロメレートを形成し、それにより不均一な厚さの層を形成し、その際、ベース材料の蛍光体はガーネット、クロロシリケート、チオガレート及びアルミン酸塩のグループから選択され、被覆材料は火炎加水分解により製造された金属酸化物のグループから選択され、前記金属酸化物用の金属が、Si、Ti、Zr、Yのグループから選択されることを特徴とする、被覆された蛍光体。
- 層の一次粒子の平均粒度は、一次粒子のd50値として解釈して、最大30nmであることを特徴とする、請求項1記載の被覆された蛍光体。
- 層の一次粒子の平均粒度は、一次粒子のd50値として解釈して、高くても15nmであることを特徴とする、請求項1記載の被覆された蛍光体。
- 前記金属酸化物が、火炎加水分解により製造されたシリカであることを特徴とする、請求項1記載の被覆された蛍光体。
- 被覆材料は更に蛍光体を有することを特徴とする、請求項1記載の被覆された蛍光体。
- 被覆材料は更にY2O3:Euを有することを特徴とする、請求項1記載の被覆された蛍光体。
- 平均層厚が40〜200nmであることを特徴とする、請求項1記載の被覆された蛍光体。
- 被覆材料のBETによる比表面積は30〜500m2/gであることを特徴とする、請求項1記載の被覆された蛍光体。
- ベース材料の蛍光体の粒子の全表面が、前記被覆材料の前記層により被覆されていることを特徴とする、請求項1記載の被覆された蛍光体。
- 前記層は単一の被覆材料だけを含有することを特徴とする、請求項1記載の被覆された蛍光体。
- UV領域又は可視光波長領域で放射線を発する少なくとも1つの放射線源と、前記放射線源の放射線を少なくとも部分的により長波長の放射線に変換する蛍光体層とを有する発光装置において、前記蛍光体層が請求項1から10までのいずれか1項記載の被覆された蛍光体から構成されている、発光装置。
- 次の方法工程:
a) ベース材料として蛍光体粉末を準備する工程;
b) 被覆材料として火炎加水分解により製造された金属酸化物を準備する工程;
c) 前記の2つの材料を乾式混合する工程
を特徴とする、請求項1から10までのいずれか1項記載の被覆された蛍光体の製造方法。 - 前記の乾式混合する工程の間に、前記層の前記の個々の一次粒子の少なくとも一部は前記ベース材料上で相互に凝固してアグリゲート又はアグロメレートを形成することを特徴とする、請求項12記載の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10307281A DE10307281A1 (de) | 2003-02-20 | 2003-02-20 | Beschichteter Leuchtstoff, lichtemittierende Vorrichtung mit derartigem Leuchtstoff und Verfahren zu seiner Herstellung |
PCT/DE2004/000325 WO2004074400A1 (de) | 2003-02-20 | 2004-02-20 | Beschichteter leuchtstoff, lichtemittierende vorrichtung mit derartigem leuchtstoff und verfahren zu seiner herstellung |
Publications (2)
Publication Number | Publication Date |
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JP2006518398A JP2006518398A (ja) | 2006-08-10 |
JP4557293B2 true JP4557293B2 (ja) | 2010-10-06 |
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JP2006501508A Expired - Lifetime JP4557293B2 (ja) | 2003-02-20 | 2004-02-20 | 被覆された蛍光体、この種の蛍光体を有する発光装置及びその製造方法 |
Country Status (4)
Country | Link |
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US (1) | US7678293B2 (ja) |
JP (1) | JP4557293B2 (ja) |
DE (2) | DE10307281A1 (ja) |
WO (1) | WO2004074400A1 (ja) |
Families Citing this family (22)
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US7358543B2 (en) * | 2005-05-27 | 2008-04-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device |
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TWI357435B (en) * | 2006-05-12 | 2012-02-01 | Lextar Electronics Corp | Light emitting diode and wavelength converting mat |
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TW201200580A (en) * | 2010-06-29 | 2012-01-01 | Nihon Ceratec Co Ltd | Fluorescent substance material and light-emitting device |
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DE102011116402A1 (de) * | 2011-10-19 | 2013-04-25 | Osram Opto Semiconductors Gmbh | Wellenlängenkonvertierendes Partikel, Verfahren zur Herstellung von wellenlängenkonvertierenden Partikeln und optoelektronisches Bauelement mit wellenlängenkonvertierenden Partikeln |
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JP2014136670A (ja) * | 2013-01-18 | 2014-07-28 | Shin Etsu Chem Co Ltd | 強負帯電付与性疎水性球状シリカ微粒子、その製造方法及びそれを用いた静電荷現像用電荷制御剤 |
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JP2015089898A (ja) * | 2013-11-05 | 2015-05-11 | 信越化学工業株式会社 | 無機蛍光体粉末、無機蛍光体粉末を用いた硬化性樹脂組成物、波長変換部材および光半導体装置 |
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- 2004-02-20 JP JP2006501508A patent/JP4557293B2/ja not_active Expired - Lifetime
- 2004-02-20 DE DE112004000210.9T patent/DE112004000210B4/de not_active Expired - Lifetime
- 2004-02-20 US US10/544,497 patent/US7678293B2/en not_active Expired - Lifetime
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JP2006518398A (ja) | 2006-08-10 |
DE10307281A1 (de) | 2004-09-02 |
US7678293B2 (en) | 2010-03-16 |
DE112004000210D2 (de) | 2005-10-06 |
US20060078734A1 (en) | 2006-04-13 |
DE112004000210B4 (de) | 2023-04-20 |
WO2004074400A1 (de) | 2004-09-02 |
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