JP6186201B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP6186201B2 JP6186201B2 JP2013158367A JP2013158367A JP6186201B2 JP 6186201 B2 JP6186201 B2 JP 6186201B2 JP 2013158367 A JP2013158367 A JP 2013158367A JP 2013158367 A JP2013158367 A JP 2013158367A JP 6186201 B2 JP6186201 B2 JP 6186201B2
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 177
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 94
- 239000011787 zinc oxide Substances 0.000 claims description 88
- 239000010410 layer Substances 0.000 claims description 77
- 239000002245 particle Substances 0.000 claims description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 46
- 239000011247 coating layer Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 31
- 235000012239 silicon dioxide Nutrition 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 15
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 11
- 239000010419 fine particle Substances 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 67
- 239000011248 coating agent Substances 0.000 description 28
- 238000000576 coating method Methods 0.000 description 28
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 27
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 26
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 18
- 230000000694 effects Effects 0.000 description 12
- 238000002310 reflectometry Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 9
- 239000005083 Zinc sulfide Substances 0.000 description 9
- 229910052717 sulfur Inorganic materials 0.000 description 9
- 239000011593 sulfur Substances 0.000 description 9
- 229910052984 zinc sulfide Inorganic materials 0.000 description 9
- 238000012423 maintenance Methods 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 229910052946 acanthite Inorganic materials 0.000 description 6
- 229940056910 silver sulfide Drugs 0.000 description 6
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 4
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- -1 red Chemical compound 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 3
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 2
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 2
- 229910015999 BaAl Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 101100476480 Mus musculus S100a8 gene Proteins 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CJDZTJNITSFKRE-UHFFFAOYSA-N phosphorus dioxide Chemical compound O=[P]=O CJDZTJNITSFKRE-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Description
ZnO+H2S→ZnS+H2O・・・(化1)
図3に示したように、表面に酸化亜鉛の被膜を形成した銀板31と、硫化物系蛍光体(Ca,Sr)S:Euの蛍光体粒子11よりなり、被覆層12を形成していない蛍光体材料10とを密閉容器32の内に収納し、85℃の高温湿環境暴露試験を行った。密閉容器32の中には水33を入れ、銀板31及び蛍光体材料10は、水33に浸らないように、水33の上方に配置した。銀板31の表面の被膜は、平均粒子径20nmの酸化亜鉛微粒子をアルコール系溶剤に分散させ、スプレーノズルを用いて銀板31の表面に約100nmの厚みとなるように塗布し、乾燥させることにより形成した。
実施例1−1と同様にして、酸化亜鉛の被膜を形成した銀板31と、硫化物系蛍光体(Ca,Sr)S:Euの蛍光体粒子11よりなる蛍光体材料10とを密閉容器32の内に収納し、密閉容器32の中には水33を入れずに、85℃で高温環境暴露試験を行い、銀板31の反射率の変化を調べた。実施例2−1は、積極的に加湿をしないで85℃に保持した場合の試験である。また、比較例2−1として、被膜を形成しない銀板31について、実施例2−1と同様にして、85℃で高温環境暴露試験を行い、銀板31の反射率の変化を調べた。その際、密閉容器32の内部、並びに、密閉容器32の内部に設置した蛍光体材料10及び銀板31を含めた全ての内容物は、特別に事前の乾燥は行わず、吸着水分が昇温により密閉容器32の内部に蒸発拡散することにより、密閉容器32の内部には一定量の水分が存在する環境とした。
銀板31の表面に形成した酸化亜鉛の被膜の厚みを変えたことを除き、他は、実施例1−1と同様にして、85℃の高温湿環境暴露試験を行った。銀板31の表面に形成した酸化亜鉛の被膜の厚みは、実施例3−1は20nm、実施例3−2は40nm、実施例3−3は400nm、実施例3−4は600nm、実施例3−5は1000nmとした。いずれについても蛍光体粒子11には被覆層12を形成していない。
硫化物系蛍光体(Ca,Sr)S:Euよりなる蛍光体粒子11の表面に、被覆層12として、二酸化ケイ素よりなる二酸化ケイ素層と酸化亜鉛よりなる酸化亜鉛層とを形成し、蛍光体材料10を作製した。酸化亜鉛層は二酸化ケイ素層の上に形成し、二酸化ケイ素層の厚みは約300nm、酸化亜鉛層の厚みは約200nmであった。二酸化ケイ素層は、ペルヒドロポリシラザンと溶媒とを混合したケイ素を含む前駆体溶液に蛍光体粒子11を混合し、乾燥して、熱処理することにより形成した。酸化亜鉛層は、酸化亜鉛の微粒子を溶媒に分散させたスラリーを蛍光体粒子11に塗布し、熱処理することにより形成した。
参考例1−1〜1−6として、硫化物系蛍光体(Ca,Sr)S:Euよりなる蛍光体粒子11の表面に、被覆層12として酸化亜鉛よりなる酸化亜鉛層を形成し、蛍光体材料10を作製した。被覆層12は、酸化亜鉛の微粒子を溶媒に分散させたスラリーを蛍光体粒子11に塗布し、熱処理することにより形成した。その際、参考例1−1〜1−6で溶媒に分散させる酸化亜鉛の微粒子の量を変化させることにより、被覆層12(すなわち酸化亜鉛層)の厚みを変化させた。被覆層12の厚みは、参考例1−1が約200nm、参考例1−2が約500nm、参考例1−3が約1μm、参考例1−4が約100nm、参考例1−5が約40nm、参考例1−6が約20nmであった。また、被覆層12(すなわち酸化亜鉛層)の量を蛍光体粒子11の重量に対する酸化亜鉛の重量比に換算すると、参考例1−1が約5重量%、参考例1−2が約15重量%、参考例1−3が約30重量%、参考例1−4が約2.5重量%、参考例1−5が約1.0重量%、参考例1−6が約0.5重量%であった。
被覆層12を二酸化ケイ素よりなる二酸化ケイ素層と酸化亜鉛よりなる酸化亜鉛層との2層構造としたことを除き、他は参考例1−1と同様にして蛍光体材料10を作製した。酸化亜鉛層は二酸化ケイ素層の上に形成し、二酸化ケイ素層の厚みは約300nm、酸化亜鉛層の厚みは約200nmであった。二酸化ケイ素層は、ペルヒドロポリシラザンと溶媒とを混合したケイ素を含む前駆体溶液に蛍光体粒子11を混合し、乾燥して、熱処理することにより形成した。
Claims (7)
- 発光素子と、
この発光素子からの光を反射する銀よりなるリフレクタと、
蛍光体材料とを備え、
前記リフレクタは、少なくとも表面の一部に、平均粒子径20nmの酸化亜鉛微粒子からなり、厚みが、20nm以上1μm以下である被膜層を有する
ことを特徴とする発光装置。 - 前記蛍光体材料は、硫化物系蛍光体よりなる蛍光体粒子を含むことを特徴とする請求項1に記載の発光装置。
- 前記蛍光体材料は、蛍光体粒子と、この蛍光体粒子の表面に設けられ、酸化亜鉛を含む被覆層とを備えたことを特徴とする請求項1又は請求項2に記載の発光装置。
- 前記被覆層における酸化亜鉛層の量は、蛍光体粒子の重量に対する酸化亜鉛の重量比で、0.75重量%以上30重量%以下であることを特徴とする請求項3に記載の発光装置。
- 前記被覆層は、酸化亜鉛よりなる酸化亜鉛層を有することを特徴とする請求項3又は請求項4に記載の発光装置。
- 前記酸化亜鉛層の厚みは、30nm以上1μm以下であることを特徴とする請求項5に記載の発光装置。
- 前記被覆層は、更に、二酸化ケイ素よりなる二酸化ケイ素層を有することを特徴とする請求項5又は請求項6に記載の発光装置。
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JP2014045182A JP2014045182A (ja) | 2014-03-13 |
JP6186201B2 true JP6186201B2 (ja) | 2017-08-23 |
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JP (1) | JP6186201B2 (ja) |
TW (1) | TWI594462B (ja) |
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