JP2006508548A - ドープされたｈｉｇｈ−ｋサイドウォールスペーサを有す電界効果トランジスタのドレイン／ソース拡張構造 - Google Patents

ドープされたｈｉｇｈ−ｋサイドウォールスペーサを有す電界効果トランジスタのドレイン／ソース拡張構造 Download PDF

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JP2006508548A
JP2006508548A JP2004570755A JP2004570755A JP2006508548A JP 2006508548 A JP2006508548 A JP 2006508548A JP 2004570755 A JP2004570755 A JP 2004570755A JP 2004570755 A JP2004570755 A JP 2004570755A JP 2006508548 A JP2006508548 A JP 2006508548A
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Prior art keywords
dielectric layer
dopant
region
substrate
layer
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JP2004570755A
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Japanese (ja)
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JP2006508548A5 (enExample
Inventor
フォイデル トーマス
ホルストマン マンフレッド
ビークツォレク カルシュテン
クリューゲル シュテファン
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Priority claimed from DE10255849A external-priority patent/DE10255849B4/de
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2006508548A publication Critical patent/JP2006508548A/ja
Publication of JP2006508548A5 publication Critical patent/JP2006508548A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2004570755A 2002-11-29 2003-11-06 ドープされたｈｉｇｈ−ｋサイドウォールスペーサを有す電界効果トランジスタのドレイン／ソース拡張構造 Pending JP2006508548A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10255849A DE10255849B4 (de) 2002-11-29 2002-11-29 Verbesserte Drain/Source-Erweiterungsstruktur eines Feldeffekttransistors mit dotierten Seitenwandabstandselementen mit hoher Permittivität und Verfahren zu deren Herstellung
US10/442,745 US6849516B2 (en) 2002-11-29 2003-05-21 Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer
PCT/US2003/035355 WO2004051728A1 (en) 2002-11-29 2003-11-06 Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers

Publications (2)

Publication Number Publication Date
JP2006508548A true JP2006508548A (ja) 2006-03-09
JP2006508548A5 JP2006508548A5 (enExample) 2006-12-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004570755A Pending JP2006508548A (ja) 2002-11-29 2003-11-06 ドープされたｈｉｇｈ−ｋサイドウォールスペーサを有す電界効果トランジスタのドレイン／ソース拡張構造

Country Status (6)

Country Link
US (1) US20050098818A1 (enExample)
EP (1) EP1565934A1 (enExample)
JP (1) JP2006508548A (enExample)
KR (1) KR101022854B1 (enExample)
AU (1) AU2003295406A1 (enExample)
WO (1) WO2004051728A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013016782A (ja) * 2011-06-10 2013-01-24 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2016059754A1 (ja) * 2014-10-16 2016-04-21 国立研究開発法人科学技術振興機構 電界効果トランジスタ

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10324657B4 (de) * 2003-05-30 2009-01-22 Advanced Micro Devices, Inc. (n.d.Ges.d. Staates Delaware), Sunnyvale Verfahren zur Herstellung eines Metallsilizids
US8022465B2 (en) * 2005-11-15 2011-09-20 Macronrix International Co., Ltd. Low hydrogen concentration charge-trapping layer structures for non-volatile memory
EP1890322A3 (en) * 2006-08-15 2012-02-15 Kovio, Inc. Printed dopant layers
US8106455B2 (en) * 2009-04-30 2012-01-31 International Business Machines Corporation Threshold voltage adjustment through gate dielectric stack modification
KR101205037B1 (ko) 2011-02-28 2012-11-26 에스케이하이닉스 주식회사 반도체 소자 및 그 형성방법
US8673731B2 (en) * 2012-08-20 2014-03-18 International Business Machines Corporation Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devices
GB2521457A (en) * 2013-12-20 2015-06-24 Isis Innovation Charge stabilized dielectric film for electronic devices
KR102300071B1 (ko) * 2020-02-12 2021-09-07 포항공과대학교 산학협력단 고 유전율 필드 플레이트를 구비한 드레인 확장형 핀펫 및 이의 제조방법

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JPS61191025A (ja) * 1985-02-20 1986-08-25 Fujitsu Ltd 半導体装置の製造方法
JPH04320036A (ja) * 1991-04-18 1992-11-10 Hitachi Ltd 半導体装置およびその製造方法
JPH05190845A (ja) * 1992-07-23 1993-07-30 Hitachi Ltd Ｍｉｓ型電界効果トランジスタ
JPH05343418A (ja) * 1992-06-09 1993-12-24 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPH07130998A (ja) * 1993-11-01 1995-05-19 Nec Corp 半導体装置の製造方法

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US4994869A (en) * 1989-06-30 1991-02-19 Texas Instruments Incorporated NMOS transistor having inversion layer source/drain contacts
EP0550255B1 (en) * 1991-12-31 1998-03-11 STMicroelectronics, Inc. Transistor spacer structure
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
KR970006262B1 (ko) * 1994-02-04 1997-04-25 금성일렉트론 주식회사 도우핑된 디스포저블층(disposable layer)을 이용한 모스트랜지스터의 제조방법
US5518945A (en) * 1995-05-05 1996-05-21 International Business Machines Corporation Method of making a diffused lightly doped drain device with built in etch stop
US5770490A (en) * 1996-08-29 1998-06-23 International Business Machines Corporation Method for producing dual work function CMOS device
US5926715A (en) * 1997-06-04 1999-07-20 Mosel Vitelic Inc. Method of forming lightly-doped drain by automatic PSG doping
US6333556B1 (en) * 1997-10-09 2001-12-25 Micron Technology, Inc. Insulating materials
US6271563B1 (en) * 1998-07-27 2001-08-07 Advanced Micro Devices, Inc. MOS transistor with high-K spacer designed for ultra-large-scale integration
US6200869B1 (en) * 1998-11-06 2001-03-13 Advanced Micro Devices, Inc. Method of fabricating an integrated circuit with ultra-shallow source/drain extensions
US6630712B2 (en) * 1999-08-11 2003-10-07 Advanced Micro Devices, Inc. Transistor with dynamic source/drain extensions
US6093590A (en) * 1999-09-14 2000-07-25 Worldwide Semiconductor Manufacturing Corp. Method of fabricating transistor having a metal gate and a gate dielectric layer with a high dielectric constant
US6255152B1 (en) * 1999-10-01 2001-07-03 United Microelectronics Corp. Method of fabricating CMOS using Si-B layer to form source/drain extension junction
US6417046B1 (en) * 2000-05-05 2002-07-09 Taiwan Semiconductor Manufacturing Company Modified nitride spacer for solving charge retention issue in floating gate memory cell
KR100439345B1 (ko) * 2000-10-31 2004-07-07 피티플러스(주) 폴리실리콘 활성층을 포함하는 박막트랜지스터 및 제조 방법
KR100397370B1 (ko) * 2001-10-29 2003-09-13 한국전자통신연구원 얕은 접합을 갖는 집적회로의 제조 방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61191025A (ja) * 1985-02-20 1986-08-25 Fujitsu Ltd 半導体装置の製造方法
JPH04320036A (ja) * 1991-04-18 1992-11-10 Hitachi Ltd 半導体装置およびその製造方法
JPH05343418A (ja) * 1992-06-09 1993-12-24 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPH05190845A (ja) * 1992-07-23 1993-07-30 Hitachi Ltd Ｍｉｓ型電界効果トランジスタ
JPH07130998A (ja) * 1993-11-01 1995-05-19 Nec Corp 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013016782A (ja) * 2011-06-10 2013-01-24 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US9837545B2 (en) 2011-06-10 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US10833202B2 (en) 2011-06-10 2020-11-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2016059754A1 (ja) * 2014-10-16 2016-04-21 国立研究開発法人科学技術振興機構 電界効果トランジスタ

Also Published As

Publication number Publication date
EP1565934A1 (en) 2005-08-24
KR101022854B1 (ko) 2011-03-17
US20050098818A1 (en) 2005-05-12
AU2003295406A1 (en) 2004-06-23
WO2004051728A1 (en) 2004-06-17
KR20050084030A (ko) 2005-08-26

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