JP2006506821A5 - - Google Patents

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Publication number
JP2006506821A5
JP2006506821A5 JP2004553934A JP2004553934A JP2006506821A5 JP 2006506821 A5 JP2006506821 A5 JP 2006506821A5 JP 2004553934 A JP2004553934 A JP 2004553934A JP 2004553934 A JP2004553934 A JP 2004553934A JP 2006506821 A5 JP2006506821 A5 JP 2006506821A5
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JP
Japan
Prior art keywords
substrate
single crystal
crystal surface
layer
epitaxial
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JP2004553934A
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English (en)
Japanese (ja)
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JP2006506821A (ja
JP5062955B2 (ja
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Priority claimed from US10/299,880 external-priority patent/US6855649B2/en
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Publication of JP2006506821A5 publication Critical patent/JP2006506821A5/ja
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Publication of JP5062955B2 publication Critical patent/JP5062955B2/ja
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JP2004553934A 2002-11-19 2003-11-19 緩和Ｓｉ１−ｘＧｅｘ層を形成する方法 Expired - Fee Related JP5062955B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/299,880 2002-11-19
US10/299,880 US6855649B2 (en) 2001-06-12 2002-11-19 Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
PCT/US2003/036969 WO2004047150A2 (en) 2002-11-19 2003-11-19 RELAXED SiGe LAYERS ON Si OR SILICON-ON-INSULATOR SUBSTRATES BY ION IMPLANTATION AND THERMAL ANNEALING

Publications (3)

Publication Number Publication Date
JP2006506821A JP2006506821A (ja) 2006-02-23
JP2006506821A5 true JP2006506821A5 (enExample) 2006-11-02
JP5062955B2 JP5062955B2 (ja) 2012-10-31

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JP2004553934A Expired - Fee Related JP5062955B2 (ja) 2002-11-19 2003-11-19 緩和Ｓｉ１−ｘＧｅｘ層を形成する方法

Country Status (7)

Country Link
US (1) US6855649B2 (enExample)
EP (1) EP1570511A4 (enExample)
JP (1) JP5062955B2 (enExample)
KR (1) KR100724509B1 (enExample)
CN (1) CN100370586C (enExample)
AU (1) AU2003295647A1 (enExample)
WO (1) WO2004047150A2 (enExample)

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