KR100724509B1 - 이온 주입 및 열적 어닐링에 의한 실리콘 또는 실리콘 온인슐레이터 기판들 상의 이완된 ＳｉＧｅ층 - Google Patents

이온 주입 및 열적 어닐링에 의한 실리콘 또는 실리콘 온인슐레이터 기판들 상의 이완된 ＳｉＧｅ층 Download PDF

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KR100724509B1
KR100724509B1 KR1020057007781A KR20057007781A KR100724509B1 KR 100724509 B1 KR100724509 B1 KR 100724509B1 KR 1020057007781 A KR1020057007781 A KR 1020057007781A KR 20057007781 A KR20057007781 A KR 20057007781A KR 100724509 B1 KR100724509 B1 KR 100724509B1
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single crystal
substrate
relaxed
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KR20050074980A (ko
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실케 에이취 크리스티안센
잭 오 추
알프레드 그릴
파트리샤 엠 무니
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인터내셔널 비지네스 머신즈 코포레이션
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    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

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  • Junction Field-Effect Transistors (AREA)
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  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020057007781A 2002-11-19 2003-11-19 이온 주입 및 열적 어닐링에 의한 실리콘 또는 실리콘 온인슐레이터 기판들 상의 이완된 ＳｉＧｅ층 Expired - Fee Related KR100724509B1 (ko)

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Application Number Priority Date Filing Date Title
US10/299,880 2002-11-19
US10/299,880 US6855649B2 (en) 2001-06-12 2002-11-19 Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

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KR20050074980A KR20050074980A (ko) 2005-07-19
KR100724509B1 true KR100724509B1 (ko) 2007-06-04

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US (1) US6855649B2 (enExample)
EP (1) EP1570511A4 (enExample)
JP (1) JP5062955B2 (enExample)
KR (1) KR100724509B1 (enExample)
CN (1) CN100370586C (enExample)
AU (1) AU2003295647A1 (enExample)
WO (1) WO2004047150A2 (enExample)

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