JP2006505667A5 - - Google Patents

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Publication number
JP2006505667A5
JP2006505667A5 JP2004551464A JP2004551464A JP2006505667A5 JP 2006505667 A5 JP2006505667 A5 JP 2006505667A5 JP 2004551464 A JP2004551464 A JP 2004551464A JP 2004551464 A JP2004551464 A JP 2004551464A JP 2006505667 A5 JP2006505667 A5 JP 2006505667A5
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JP
Japan
Prior art keywords
group
etching solution
fluoride
hydrogen fluoride
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004551464A
Other languages
English (en)
Japanese (ja)
Other versions
JP4160562B2 (ja
JP2006505667A (ja
Filing date
Publication date
Priority claimed from US10/290,765 external-priority patent/US7169323B2/en
Application filed filed Critical
Publication of JP2006505667A publication Critical patent/JP2006505667A/ja
Publication of JP2006505667A5 publication Critical patent/JP2006505667A5/ja
Application granted granted Critical
Publication of JP4160562B2 publication Critical patent/JP4160562B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004551464A 2002-11-08 2003-09-11 緩衝酸エッチング溶液のためのフッ素化界面活性剤 Expired - Fee Related JP4160562B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/290,765 US7169323B2 (en) 2002-11-08 2002-11-08 Fluorinated surfactants for buffered acid etch solutions
PCT/US2003/028606 WO2004044091A1 (en) 2002-11-08 2003-09-11 Fluorinated surfactants for buffered acid etch solutions

Publications (3)

Publication Number Publication Date
JP2006505667A JP2006505667A (ja) 2006-02-16
JP2006505667A5 true JP2006505667A5 (enExample) 2006-10-26
JP4160562B2 JP4160562B2 (ja) 2008-10-01

Family

ID=32229103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004551464A Expired - Fee Related JP4160562B2 (ja) 2002-11-08 2003-09-11 緩衝酸エッチング溶液のためのフッ素化界面活性剤

Country Status (9)

Country Link
US (1) US7169323B2 (enExample)
EP (1) EP1558697B1 (enExample)
JP (1) JP4160562B2 (enExample)
KR (1) KR101036068B1 (enExample)
CN (1) CN1324110C (enExample)
AT (1) ATE345375T1 (enExample)
AU (1) AU2003272331A1 (enExample)
DE (1) DE60309738T2 (enExample)
WO (1) WO2004044091A1 (enExample)

Families Citing this family (25)

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US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
CN1934233B (zh) * 2003-10-28 2015-02-04 塞克姆公司 清洁溶液和蚀刻剂及其使用方法
US7294610B2 (en) * 2004-03-03 2007-11-13 3M Innovative Properties Company Fluorinated sulfonamide surfactants for aqueous cleaning solutions
JP4677890B2 (ja) * 2005-11-29 2011-04-27 信越半導体株式会社 埋め込み拡散エピタキシャルウエーハの製造方法および埋め込み拡散エピタキシャルウエーハ
JP2008124135A (ja) * 2006-11-09 2008-05-29 Stella Chemifa Corp 微細加工処理剤、及びそれを用いた微細加工処理方法
EP2139030B1 (en) * 2007-04-13 2014-05-14 Daikin Industries, Ltd. Etching solution
KR101030057B1 (ko) * 2008-07-16 2011-04-22 (주) 이피웍스 실리콘 폐기물의 재생방법 및 그 방법으로 재생된 실리콘조성물
WO2010074877A1 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Method of making a composition and aqueous composition preparable thereby
US20100155657A1 (en) * 2008-12-23 2010-06-24 3M Innovative Properties Company Aqueous composition containing fluorinated sulfonamide and sulfonamidate compounds
WO2010113744A1 (ja) * 2009-03-30 2010-10-07 東レ株式会社 導電膜除去剤および導電膜除去方法
US8030112B2 (en) * 2010-01-22 2011-10-04 Solid State System Co., Ltd. Method for fabricating MEMS device
JP6101693B2 (ja) * 2011-08-10 2017-03-22 スリーエム イノベイティブ プロパティズ カンパニー フォトレジスト洗浄溶液用のパーフルオロアルキルスルホンアミド界面活性剤
MY181266A (en) * 2012-12-14 2020-12-21 Basf Se Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
KR102171621B1 (ko) 2013-01-29 2020-10-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 계면활성제, 그의 제조 방법 및 사용 방법
KR101530606B1 (ko) * 2014-03-18 2015-07-01 주식회사 스노젠 인산 및 황산계 과불소화알킬 에스테르 계면 활성제와 이를 함유하는 크롬 식각액 및 저온 공정용 소핑제
JP6433730B2 (ja) * 2014-09-08 2018-12-05 東芝メモリ株式会社 半導体装置の製造方法及び半導体製造装置
KR102462889B1 (ko) 2014-09-11 2022-11-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 플루오르화 계면활성제를 함유하는 조성물
CN104388091B (zh) * 2014-10-25 2016-06-01 江阴市化学试剂厂有限公司 缓冲氧化腐蚀液制备方法
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
KR102460326B1 (ko) * 2018-06-28 2022-10-31 오씨아이 주식회사 실리콘 기판 식각 용액
TW202035361A (zh) * 2018-12-12 2020-10-01 美商3M新設資產公司 氟化胺氧化物界面活性劑
CN111171965B (zh) * 2020-01-20 2021-07-20 安徽建筑大学 一种运行清洗多功能复合清洗液
CN112939804B (zh) * 2021-02-04 2022-11-15 济宁康德瑞化工科技有限公司 一种有机胺氧化物的制备方法
KR20240011661A (ko) 2021-05-20 2024-01-26 스텔라 케미파 코포레이션 미세 가공 처리제 및 미세 가공 처리 방법
DE102021116206B3 (de) * 2021-06-23 2022-09-29 Infineon Technologies Bipolar Gmbh & Co. Kg Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements

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JP2000164586A (ja) * 1998-11-24 2000-06-16 Daikin Ind Ltd エッチング液
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US6310018B1 (en) * 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
US20020089044A1 (en) * 2001-01-09 2002-07-11 3M Innovative Properties Company Hermetic mems package with interlocking layers
JP2002256460A (ja) * 2001-02-09 2002-09-11 Nippon Parkerizing Co Ltd アルミニウムおよびアルミニウム合金に用いるエッチングとデスマッティング用の組成物及びその方法
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US6555510B2 (en) * 2001-05-10 2003-04-29 3M Innovative Properties Company Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor

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