KR101036068B1 - 완충 산 에칭 용액을 위한 플루오르화 계면활성제 - Google Patents

완충 산 에칭 용액을 위한 플루오르화 계면활성제 Download PDF

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Publication number
KR101036068B1
KR101036068B1 KR1020057008079A KR20057008079A KR101036068B1 KR 101036068 B1 KR101036068 B1 KR 101036068B1 KR 1020057008079 A KR1020057008079 A KR 1020057008079A KR 20057008079 A KR20057008079 A KR 20057008079A KR 101036068 B1 KR101036068 B1 KR 101036068B1
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KR
South Korea
Prior art keywords
etching
solution
group
acid
etching solution
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Expired - Fee Related
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KR1020057008079A
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English (en)
Korean (ko)
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KR20050072795A (ko
Inventor
마이클 제이. 패런트
패트리샤 엠. 사부
리챠드 엠. 플린
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20050072795A publication Critical patent/KR20050072795A/ko
Application granted granted Critical
Publication of KR101036068B1 publication Critical patent/KR101036068B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • ing And Chemical Polishing (AREA)
KR1020057008079A 2002-11-08 2003-09-11 완충 산 에칭 용액을 위한 플루오르화 계면활성제 Expired - Fee Related KR101036068B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/290,765 US7169323B2 (en) 2002-11-08 2002-11-08 Fluorinated surfactants for buffered acid etch solutions
US10/290,765 2002-11-08

Publications (2)

Publication Number Publication Date
KR20050072795A KR20050072795A (ko) 2005-07-12
KR101036068B1 true KR101036068B1 (ko) 2011-05-19

Family

ID=32229103

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057008079A Expired - Fee Related KR101036068B1 (ko) 2002-11-08 2003-09-11 완충 산 에칭 용액을 위한 플루오르화 계면활성제

Country Status (9)

Country Link
US (1) US7169323B2 (enExample)
EP (1) EP1558697B1 (enExample)
JP (1) JP4160562B2 (enExample)
KR (1) KR101036068B1 (enExample)
CN (1) CN1324110C (enExample)
AT (1) ATE345375T1 (enExample)
AU (1) AU2003272331A1 (enExample)
DE (1) DE60309738T2 (enExample)
WO (1) WO2004044091A1 (enExample)

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US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
WO2005045895A2 (en) * 2003-10-28 2005-05-19 Sachem, Inc. Cleaning solutions and etchants and methods for using same
US7294610B2 (en) * 2004-03-03 2007-11-13 3M Innovative Properties Company Fluorinated sulfonamide surfactants for aqueous cleaning solutions
JP4677890B2 (ja) * 2005-11-29 2011-04-27 信越半導体株式会社 埋め込み拡散エピタキシャルウエーハの製造方法および埋め込み拡散エピタキシャルウエーハ
JP2008124135A (ja) * 2006-11-09 2008-05-29 Stella Chemifa Corp 微細加工処理剤、及びそれを用いた微細加工処理方法
KR101170296B1 (ko) * 2007-04-13 2012-07-31 다이킨 고교 가부시키가이샤 에칭액
KR101030057B1 (ko) * 2008-07-16 2011-04-22 (주) 이피웍스 실리콘 폐기물의 재생방법 및 그 방법으로 재생된 실리콘조성물
WO2010074877A1 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Method of making a composition and aqueous composition preparable thereby
WO2010074878A1 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Aqueous composition containing fluorinated sulfonamide and sulfonamidate compounds
US8617418B2 (en) * 2009-03-30 2013-12-31 Toray Industries, Inc. Conductive film removal agent and conductive film removal method
US8030112B2 (en) * 2010-01-22 2011-10-04 Solid State System Co., Ltd. Method for fabricating MEMS device
WO2013022673A2 (en) * 2011-08-10 2013-02-14 3M Innovative Properties Company Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions
KR102209867B1 (ko) * 2012-12-14 2021-01-29 바스프 에스이 50 nm 이하의 선-공간 치수를 갖는 패턴화된 재료를 처리할 때 항 패턴 붕괴를 피하기 위한 계면활성제 및 소수성화제를 포함하는 조성물의 용도
EP2951217B1 (en) * 2013-01-29 2017-08-16 3M Innovative Properties Company Surfactants and methods of making and using same
KR101530606B1 (ko) * 2014-03-18 2015-07-01 주식회사 스노젠 인산 및 황산계 과불소화알킬 에스테르 계면 활성제와 이를 함유하는 크롬 식각액 및 저온 공정용 소핑제
JP6433730B2 (ja) * 2014-09-08 2018-12-05 東芝メモリ株式会社 半導体装置の製造方法及び半導体製造装置
CN106715485B (zh) 2014-09-11 2019-11-12 3M创新有限公司 包含氟化表面活性剂的组合物
CN104388091B (zh) * 2014-10-25 2016-06-01 江阴市化学试剂厂有限公司 缓冲氧化腐蚀液制备方法
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
KR102460326B1 (ko) * 2018-06-28 2022-10-31 오씨아이 주식회사 실리콘 기판 식각 용액
TW202035361A (zh) * 2018-12-12 2020-10-01 美商3M新設資產公司 氟化胺氧化物界面活性劑
CN111171965B (zh) * 2020-01-20 2021-07-20 安徽建筑大学 一种运行清洗多功能复合清洗液
CN112939804B (zh) * 2021-02-04 2022-11-15 济宁康德瑞化工科技有限公司 一种有机胺氧化物的制备方法
CN114761519B (zh) 2021-05-20 2023-06-30 斯泰拉化工公司 微细加工处理剂、和微细加工处理方法
DE102021116206B3 (de) * 2021-06-23 2022-09-29 Infineon Technologies Bipolar Gmbh & Co. Kg Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements

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Also Published As

Publication number Publication date
JP2006505667A (ja) 2006-02-16
AU2003272331A1 (en) 2004-06-03
CN1324110C (zh) 2007-07-04
WO2004044091A1 (en) 2004-05-27
US7169323B2 (en) 2007-01-30
EP1558697B1 (en) 2006-11-15
JP4160562B2 (ja) 2008-10-01
KR20050072795A (ko) 2005-07-12
ATE345375T1 (de) 2006-12-15
DE60309738T2 (de) 2007-09-20
CN1694939A (zh) 2005-11-09
EP1558697A1 (en) 2005-08-03
DE60309738D1 (de) 2006-12-28
US20040089840A1 (en) 2004-05-13

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