ATE345375T1 - Fluorhaltige tenside für gepufferte säureätzlösungen - Google Patents

Fluorhaltige tenside für gepufferte säureätzlösungen

Info

Publication number
ATE345375T1
ATE345375T1 AT03754508T AT03754508T ATE345375T1 AT E345375 T1 ATE345375 T1 AT E345375T1 AT 03754508 T AT03754508 T AT 03754508T AT 03754508 T AT03754508 T AT 03754508T AT E345375 T1 ATE345375 T1 AT E345375T1
Authority
AT
Austria
Prior art keywords
acid etching
fluorine containing
containing surfactants
etching solutions
buffered acid
Prior art date
Application number
AT03754508T
Other languages
English (en)
Inventor
Michael J Parent
Patricia M Savu
Richard M Flynn
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of ATE345375T1 publication Critical patent/ATE345375T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • ing And Chemical Polishing (AREA)
AT03754508T 2002-11-08 2003-09-11 Fluorhaltige tenside für gepufferte säureätzlösungen ATE345375T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/290,765 US7169323B2 (en) 2002-11-08 2002-11-08 Fluorinated surfactants for buffered acid etch solutions

Publications (1)

Publication Number Publication Date
ATE345375T1 true ATE345375T1 (de) 2006-12-15

Family

ID=32229103

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03754508T ATE345375T1 (de) 2002-11-08 2003-09-11 Fluorhaltige tenside für gepufferte säureätzlösungen

Country Status (9)

Country Link
US (1) US7169323B2 (de)
EP (1) EP1558697B1 (de)
JP (1) JP4160562B2 (de)
KR (1) KR101036068B1 (de)
CN (1) CN1324110C (de)
AT (1) ATE345375T1 (de)
AU (1) AU2003272331A1 (de)
DE (1) DE60309738T2 (de)
WO (1) WO2004044091A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
EP1680806A4 (de) * 2003-10-28 2008-07-30 Sachem Inc Reinigungslösungen und ätzmittel und verfahren zu ihrer verwendung
US7294610B2 (en) * 2004-03-03 2007-11-13 3M Innovative Properties Company Fluorinated sulfonamide surfactants for aqueous cleaning solutions
JP4677890B2 (ja) * 2005-11-29 2011-04-27 信越半導体株式会社 埋め込み拡散エピタキシャルウエーハの製造方法および埋め込み拡散エピタキシャルウエーハ
JP2008124135A (ja) * 2006-11-09 2008-05-29 Stella Chemifa Corp 微細加工処理剤、及びそれを用いた微細加工処理方法
KR101169129B1 (ko) * 2007-04-13 2012-07-30 다이킨 고교 가부시키가이샤 에칭액
KR101030057B1 (ko) * 2008-07-16 2011-04-22 (주) 이피웍스 실리콘 폐기물의 재생방법 및 그 방법으로 재생된 실리콘조성물
US20100155657A1 (en) * 2008-12-23 2010-06-24 3M Innovative Properties Company Aqueous composition containing fluorinated sulfonamide and sulfonamidate compounds
WO2010074877A1 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Method of making a composition and aqueous composition preparable thereby
KR20120003874A (ko) * 2009-03-30 2012-01-11 도레이 카부시키가이샤 도전막 제거제 및 도전막 제거 방법
US8030112B2 (en) * 2010-01-22 2011-10-04 Solid State System Co., Ltd. Method for fabricating MEMS device
US9551936B2 (en) 2011-08-10 2017-01-24 3M Innovative Properties Company Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions
JP6246830B2 (ja) * 2012-12-14 2017-12-13 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ５０ｎｍ以下のライン間寸法を有するパターン化材料を処理する際におけるアンチパターン崩壊を回避するための、界面活性剤及び疎水剤を含む組成物の使用
JP6444316B2 (ja) 2013-01-29 2018-12-26 スリーエム イノベイティブ プロパティズ カンパニー 界面活性剤並びにその製造及び使用方法
KR101530606B1 (ko) * 2014-03-18 2015-07-01 주식회사 스노젠 인산 및 황산계 과불소화알킬 에스테르 계면 활성제와 이를 함유하는 크롬 식각액 및 저온 공정용 소핑제
JP6433730B2 (ja) * 2014-09-08 2018-12-05 東芝メモリ株式会社 半導体装置の製造方法及び半導体製造装置
TWI661042B (zh) 2014-09-11 2019-06-01 美商3M新設資產公司 含氟化界面活性劑之組成物及相關程序
CN104388091B (zh) * 2014-10-25 2016-06-01 江阴市化学试剂厂有限公司 缓冲氧化腐蚀液制备方法
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
KR102460326B1 (ko) * 2018-06-28 2022-10-31 오씨아이 주식회사 실리콘 기판 식각 용액
TW202035361A (zh) * 2018-12-12 2020-10-01 美商3M新設資產公司 氟化胺氧化物界面活性劑
CN111171965B (zh) * 2020-01-20 2021-07-20 安徽建筑大学 一种运行清洗多功能复合清洗液
CN112939804B (zh) * 2021-02-04 2022-11-15 济宁康德瑞化工科技有限公司 一种有机胺氧化物的制备方法
US20240240084A1 (en) * 2021-05-20 2024-07-18 Stella Chemifa Corporation Microprocessing treatment agent and microprocessing treatment method
DE102021116206B3 (de) * 2021-06-23 2022-09-29 Infineon Technologies Bipolar Gmbh & Co. Kg Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements

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JPS6039176A (ja) 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
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IN161639B (de) * 1985-05-23 1988-01-09 Hollandse Signaalapparaten Bv
JPS63283028A (ja) 1986-09-29 1988-11-18 Hashimoto Kasei Kogyo Kk 微細加工表面処理剤
US5350489A (en) * 1990-10-19 1994-09-27 Purex Co., Ltd. Treatment method of cleaning surface of plastic molded item
US5085786A (en) 1991-01-24 1992-02-04 Minnesota Mining And Manufacturing Company Aqueous film-forming foamable solution useful as fire extinguishing concentrate
US6201122B1 (en) * 1992-12-08 2001-03-13 3M Innovative Properties Company Fluoroaliphatic radical-containing anionic sulfonamido compounds
US5755989A (en) 1993-02-04 1998-05-26 Daikin Industries, Ltd. Wet etching composition having excellent wetting property for semiconductors
US5803956A (en) 1994-07-28 1998-09-08 Hashimoto Chemical Company, Ltd. Surface treating composition for micro processing
US5478436A (en) 1994-12-27 1995-12-26 Motorola, Inc. Selective cleaning process for fabricating a semiconductor device
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US5688884A (en) 1995-08-31 1997-11-18 E. I. Du Pont De Nemours And Company Polymerization process
JP3332700B2 (ja) 1995-12-22 2002-10-07 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
WO1997046283A1 (en) 1996-06-06 1997-12-11 Minnesota Mining And Manufacturing Company Fire-fighting agents containing adsorbable fluorocarbon surfactants
US6630074B1 (en) * 1997-04-04 2003-10-07 International Business Machines Corporation Etching composition and use thereof
US6348157B1 (en) 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
JP2000164586A (ja) * 1998-11-24 2000-06-16 Daikin Ind Ltd エッチング液
AU4314600A (en) 1999-04-27 2000-11-10 Hiroshi Miwa Glass etching composition and method for frosting using the same
US6600557B1 (en) 1999-05-21 2003-07-29 Memc Electronic Materials, Inc. Method for the detection of processing-induced defects in a silicon wafer
EP1246856B1 (de) 1999-10-27 2009-07-15 3M Innovative Properties Company Fluorochemische sulfonamide tenside
US6310018B1 (en) 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
US20020089044A1 (en) 2001-01-09 2002-07-11 3M Innovative Properties Company Hermetic mems package with interlocking layers
JP2002256460A (ja) 2001-02-09 2002-09-11 Nippon Parkerizing Co Ltd アルミニウムおよびアルミニウム合金に用いるエッチングとデスマッティング用の組成物及びその方法
US20020142619A1 (en) 2001-03-30 2002-10-03 Memc Electronic Materials, Inc. Solution composition and process for etching silicon
US6555510B2 (en) 2001-05-10 2003-04-29 3M Innovative Properties Company Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor

Also Published As

Publication number Publication date
AU2003272331A1 (en) 2004-06-03
US7169323B2 (en) 2007-01-30
KR20050072795A (ko) 2005-07-12
CN1324110C (zh) 2007-07-04
DE60309738D1 (de) 2006-12-28
EP1558697B1 (de) 2006-11-15
EP1558697A1 (de) 2005-08-03
DE60309738T2 (de) 2007-09-20
US20040089840A1 (en) 2004-05-13
JP2006505667A (ja) 2006-02-16
KR101036068B1 (ko) 2011-05-19
WO2004044091A1 (en) 2004-05-27
JP4160562B2 (ja) 2008-10-01
CN1694939A (zh) 2005-11-09

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