DE60309738D1 - Fluorhaltige tenside für gepufferte säureätzlösungen - Google Patents

Fluorhaltige tenside für gepufferte säureätzlösungen

Info

Publication number
DE60309738D1
DE60309738D1 DE60309738T DE60309738T DE60309738D1 DE 60309738 D1 DE60309738 D1 DE 60309738D1 DE 60309738 T DE60309738 T DE 60309738T DE 60309738 T DE60309738 T DE 60309738T DE 60309738 D1 DE60309738 D1 DE 60309738D1
Authority
DE
Germany
Prior art keywords
acid solutions
buffered acid
fluorous
etch solutions
fluorous surfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60309738T
Other languages
English (en)
Other versions
DE60309738T2 (de
Inventor
J Parent
M Savu
M Flynn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of DE60309738D1 publication Critical patent/DE60309738D1/de
Publication of DE60309738T2 publication Critical patent/DE60309738T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE60309738T 2002-11-08 2003-09-11 Fluorhaltige tenside für gepufferte säureätzlösungen Expired - Lifetime DE60309738T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US290765 2002-11-08
US10/290,765 US7169323B2 (en) 2002-11-08 2002-11-08 Fluorinated surfactants for buffered acid etch solutions
PCT/US2003/028606 WO2004044091A1 (en) 2002-11-08 2003-09-11 Fluorinated surfactants for buffered acid etch solutions

Publications (2)

Publication Number Publication Date
DE60309738D1 true DE60309738D1 (de) 2006-12-28
DE60309738T2 DE60309738T2 (de) 2007-09-20

Family

ID=32229103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60309738T Expired - Lifetime DE60309738T2 (de) 2002-11-08 2003-09-11 Fluorhaltige tenside für gepufferte säureätzlösungen

Country Status (9)

Country Link
US (1) US7169323B2 (de)
EP (1) EP1558697B1 (de)
JP (1) JP4160562B2 (de)
KR (1) KR101036068B1 (de)
CN (1) CN1324110C (de)
AT (1) ATE345375T1 (de)
AU (1) AU2003272331A1 (de)
DE (1) DE60309738T2 (de)
WO (1) WO2004044091A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
CN1934233B (zh) * 2003-10-28 2015-02-04 塞克姆公司 清洁溶液和蚀刻剂及其使用方法
US7294610B2 (en) * 2004-03-03 2007-11-13 3M Innovative Properties Company Fluorinated sulfonamide surfactants for aqueous cleaning solutions
JP4677890B2 (ja) * 2005-11-29 2011-04-27 信越半導体株式会社 埋め込み拡散エピタキシャルウエーハの製造方法および埋め込み拡散エピタキシャルウエーハ
JP2008124135A (ja) * 2006-11-09 2008-05-29 Stella Chemifa Corp 微細加工処理剤、及びそれを用いた微細加工処理方法
KR101170296B1 (ko) * 2007-04-13 2012-07-31 다이킨 고교 가부시키가이샤 에칭액
KR101030057B1 (ko) * 2008-07-16 2011-04-22 (주) 이피웍스 실리콘 폐기물의 재생방법 및 그 방법으로 재생된 실리콘조성물
WO2010074877A1 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Method of making a composition and aqueous composition preparable thereby
WO2010074878A1 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Aqueous composition containing fluorinated sulfonamide and sulfonamidate compounds
WO2010113744A1 (ja) * 2009-03-30 2010-10-07 東レ株式会社 導電膜除去剤および導電膜除去方法
US8030112B2 (en) * 2010-01-22 2011-10-04 Solid State System Co., Ltd. Method for fabricating MEMS device
US9551936B2 (en) 2011-08-10 2017-01-24 3M Innovative Properties Company Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions
EP2932525B1 (de) * 2012-12-14 2018-06-13 Basf Se Verwendung von zusammensetzungen mit einem tensid und einem hydrophobierungsmittel zur vermeidung eines strukturzusammenbruchs bei der behandlung strukturierter materialien mit zeilenabstandsabmessungen von 50 nm oder weniger
CN104955854B (zh) * 2013-01-29 2017-09-05 3M创新有限公司 表面活性剂及其制备和使用方法
KR101530606B1 (ko) * 2014-03-18 2015-07-01 주식회사 스노젠 인산 및 황산계 과불소화알킬 에스테르 계면 활성제와 이를 함유하는 크롬 식각액 및 저온 공정용 소핑제
JP6433730B2 (ja) * 2014-09-08 2018-12-05 東芝メモリ株式会社 半導体装置の製造方法及び半導体製造装置
KR102462889B1 (ko) 2014-09-11 2022-11-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 플루오르화 계면활성제를 함유하는 조성물
CN104388091B (zh) * 2014-10-25 2016-06-01 江阴市化学试剂厂有限公司 缓冲氧化腐蚀液制备方法
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
KR102460326B1 (ko) * 2018-06-28 2022-10-31 오씨아이 주식회사 실리콘 기판 식각 용액
TW202035361A (zh) 2018-12-12 2020-10-01 美商3M新設資產公司 氟化胺氧化物界面活性劑
CN111171965B (zh) * 2020-01-20 2021-07-20 安徽建筑大学 一种运行清洗多功能复合清洗液
CN112939804B (zh) * 2021-02-04 2022-11-15 济宁康德瑞化工科技有限公司 一种有机胺氧化物的制备方法
KR20240011661A (ko) 2021-05-20 2024-01-26 스텔라 케미파 코포레이션 미세 가공 처리제 및 미세 가공 처리 방법

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GB1037857A (en) 1963-07-11 1966-08-03 Pennsalt Chemicals Corp Method and composition for cleaning resin coated substrates
US4055458A (en) 1975-08-07 1977-10-25 Bayer Aktiengesellschaft Etching glass with HF and fluorine-containing surfactant
DE2921142A1 (de) 1979-05-25 1980-12-11 Bayer Ag Verwendung von perfluoralkansulfonamid- salzen als tenside
DE3038985A1 (de) * 1980-10-15 1982-05-27 Bayer Ag, 5090 Leverkusen Verfahren zum saeurepolieren von glas
DE3171226D1 (en) 1981-09-08 1985-08-08 Dainippon Ink & Chemicals Fluorine-containing aminosulfonate
JPS6039176A (ja) 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
US4585624A (en) * 1984-11-19 1986-04-29 Young Galen F Paraformaldehyde gas generator for fumigating animal houses
IN161639B (de) * 1985-05-23 1988-01-09 Hollandse Signaalapparaten Bv
JPS63283028A (ja) 1986-09-29 1988-11-18 Hashimoto Kasei Kogyo Kk 微細加工表面処理剤
US5350489A (en) * 1990-10-19 1994-09-27 Purex Co., Ltd. Treatment method of cleaning surface of plastic molded item
US5085786A (en) 1991-01-24 1992-02-04 Minnesota Mining And Manufacturing Company Aqueous film-forming foamable solution useful as fire extinguishing concentrate
US6201122B1 (en) * 1992-12-08 2001-03-13 3M Innovative Properties Company Fluoroaliphatic radical-containing anionic sulfonamido compounds
US5755989A (en) 1993-02-04 1998-05-26 Daikin Industries, Ltd. Wet etching composition having excellent wetting property for semiconductors
US5803956A (en) 1994-07-28 1998-09-08 Hashimoto Chemical Company, Ltd. Surface treating composition for micro processing
US5478436A (en) 1994-12-27 1995-12-26 Motorola, Inc. Selective cleaning process for fabricating a semiconductor device
JP3923097B2 (ja) 1995-03-06 2007-05-30 忠弘 大見 洗浄装置
US5688884A (en) 1995-08-31 1997-11-18 E. I. Du Pont De Nemours And Company Polymerization process
JP3332700B2 (ja) 1995-12-22 2002-10-07 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
WO1997046283A1 (en) 1996-06-06 1997-12-11 Minnesota Mining And Manufacturing Company Fire-fighting agents containing adsorbable fluorocarbon surfactants
US6630074B1 (en) * 1997-04-04 2003-10-07 International Business Machines Corporation Etching composition and use thereof
US6348157B1 (en) 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
JP2000164586A (ja) * 1998-11-24 2000-06-16 Daikin Ind Ltd エッチング液
AU4314600A (en) 1999-04-27 2000-11-10 Hiroshi Miwa Glass etching composition and method for frosting using the same
US6600557B1 (en) 1999-05-21 2003-07-29 Memc Electronic Materials, Inc. Method for the detection of processing-induced defects in a silicon wafer
AU1440901A (en) 1999-10-27 2001-05-08 3M Innovative Properties Company Fluorochemical sulfonamide surfactants
US6310018B1 (en) 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
US20020089044A1 (en) 2001-01-09 2002-07-11 3M Innovative Properties Company Hermetic mems package with interlocking layers
JP2002256460A (ja) 2001-02-09 2002-09-11 Nippon Parkerizing Co Ltd アルミニウムおよびアルミニウム合金に用いるエッチングとデスマッティング用の組成物及びその方法
US20020142619A1 (en) 2001-03-30 2002-10-03 Memc Electronic Materials, Inc. Solution composition and process for etching silicon
US6555510B2 (en) 2001-05-10 2003-04-29 3M Innovative Properties Company Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor

Also Published As

Publication number Publication date
KR20050072795A (ko) 2005-07-12
JP4160562B2 (ja) 2008-10-01
EP1558697B1 (de) 2006-11-15
US20040089840A1 (en) 2004-05-13
WO2004044091A1 (en) 2004-05-27
JP2006505667A (ja) 2006-02-16
DE60309738T2 (de) 2007-09-20
KR101036068B1 (ko) 2011-05-19
CN1694939A (zh) 2005-11-09
ATE345375T1 (de) 2006-12-15
AU2003272331A1 (en) 2004-06-03
CN1324110C (zh) 2007-07-04
US7169323B2 (en) 2007-01-30
EP1558697A1 (de) 2005-08-03

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Legal Events

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