DE602004022125D1 - Hoch reine alkalische Ätzenlösung für Silizium-Wafern und alkalisches Ätzverfahren eines Silizium-Wafers - Google Patents

Hoch reine alkalische Ätzenlösung für Silizium-Wafern und alkalisches Ätzverfahren eines Silizium-Wafers

Info

Publication number
DE602004022125D1
DE602004022125D1 DE602004022125T DE602004022125T DE602004022125D1 DE 602004022125 D1 DE602004022125 D1 DE 602004022125D1 DE 602004022125 T DE602004022125 T DE 602004022125T DE 602004022125 T DE602004022125 T DE 602004022125T DE 602004022125 D1 DE602004022125 D1 DE 602004022125D1
Authority
DE
Germany
Prior art keywords
alkaline etching
highly pure
silicon
etching process
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004022125T
Other languages
English (en)
Inventor
Shigeki Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic AG filed Critical Siltronic AG
Publication of DE602004022125D1 publication Critical patent/DE602004022125D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
DE602004022125T 2003-12-22 2004-12-16 Hoch reine alkalische Ätzenlösung für Silizium-Wafern und alkalisches Ätzverfahren eines Silizium-Wafers Active DE602004022125D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003425672 2003-12-22

Publications (1)

Publication Number Publication Date
DE602004022125D1 true DE602004022125D1 (de) 2009-09-03

Family

ID=34544950

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004022125T Active DE602004022125D1 (de) 2003-12-22 2004-12-16 Hoch reine alkalische Ätzenlösung für Silizium-Wafern und alkalisches Ätzverfahren eines Silizium-Wafers

Country Status (7)

Country Link
US (1) US7288206B2 (de)
EP (1) EP1548812B1 (de)
JP (1) JP4700333B2 (de)
KR (1) KR100647148B1 (de)
CN (1) CN100415934C (de)
DE (1) DE602004022125D1 (de)
TW (1) TWI254985B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4552616B2 (ja) * 2004-11-22 2010-09-29 セイコーエプソン株式会社 エッチング液及びその製造方法、並びに液体噴射ヘッドの製造方法
JP4835069B2 (ja) * 2005-08-17 2011-12-14 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
JP5017709B2 (ja) * 2006-09-07 2012-09-05 ジルトロニック アクチエンゲゼルシャフト シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法
JP2008166805A (ja) * 2006-12-29 2008-07-17 Siltron Inc 高平坦度シリコンウェハーの製造方法
JP5142592B2 (ja) 2007-06-06 2013-02-13 関東化学株式会社 基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物
CN101884095B (zh) * 2007-10-04 2012-06-27 三菱瓦斯化学株式会社 硅蚀刻液和蚀刻方法
JP2009141165A (ja) * 2007-12-07 2009-06-25 Siltronic Japan Corp シリコンウェハのエッチング方法
JP5379441B2 (ja) * 2008-10-09 2013-12-25 関東化学株式会社 基板処理用アルカリ性水溶液組成物
JP5216749B2 (ja) * 2009-11-02 2013-06-19 ジルトロニック アクチエンゲゼルシャフト シリコンウエーハの加工方法
EP2983195A1 (de) * 2014-08-04 2016-02-10 EpiGan NV Halbleiterstruktur mit einer aktiven Halbleiterschicht der iii-v-Art auf einem Pufferschichtstapel und Verfahren zur Herstellung einer Halbleiterstruktur

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3380658B2 (ja) 1995-09-19 2003-02-24 鶴見曹達株式会社 アルカリ溶液の精製方法
CN1188817A (zh) * 1996-11-15 1998-07-29 Memc电子材料有限公司 在超声场的存在下用稀化学蚀刻剂控制二氧化硅蚀刻速率
JP3686910B2 (ja) 1997-09-29 2005-08-24 三菱住友シリコン株式会社 シリコンウェーハのエッチング方法
JP3400694B2 (ja) 1997-11-14 2003-04-28 東芝セラミックス株式会社 シリコンウエハのエッチング方法
MY120464A (en) 1997-12-09 2005-10-31 Shinetsu Handotai Kk Semiconductor wafer processing method and semiconductor wafers produced by the same
JP4113288B2 (ja) * 1998-09-04 2008-07-09 スピードファム株式会社 研磨用組成物およびそれを用いたシリコンウェーハの加工方法
US6338805B1 (en) * 1999-07-14 2002-01-15 Memc Electronic Materials, Inc. Process for fabricating semiconductor wafers with external gettering
US6225136B1 (en) * 1999-08-25 2001-05-01 Seh America, Inc. Method of producing a contaminated wafer
JP2001250807A (ja) * 1999-12-28 2001-09-14 Shin Etsu Handotai Co Ltd エッチング液、エッチング方法及び半導体シリコンウェーハ
JP3563017B2 (ja) * 2000-07-19 2004-09-08 ロデール・ニッタ株式会社 研磨組成物、研磨組成物の製造方法及びポリシング方法

Also Published As

Publication number Publication date
TW200522194A (en) 2005-07-01
US20050133759A1 (en) 2005-06-23
CN100415934C (zh) 2008-09-03
US7288206B2 (en) 2007-10-30
JP2005210085A (ja) 2005-08-04
KR20050063733A (ko) 2005-06-28
JP4700333B2 (ja) 2011-06-15
KR100647148B1 (ko) 2006-11-23
TWI254985B (en) 2006-05-11
EP1548812B1 (de) 2009-07-22
EP1548812A1 (de) 2005-06-29
CN1648287A (zh) 2005-08-03

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